CN1298553A - 发光半导体器件 - Google Patents

发光半导体器件 Download PDF

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Publication number
CN1298553A
CN1298553A CN99805623A CN99805623A CN1298553A CN 1298553 A CN1298553 A CN 1298553A CN 99805623 A CN99805623 A CN 99805623A CN 99805623 A CN99805623 A CN 99805623A CN 1298553 A CN1298553 A CN 1298553A
Authority
CN
China
Prior art keywords
layer
semiconductor
semiconductor device
reflector
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN99805623A
Other languages
English (en)
Chinese (zh)
Inventor
W·维格莱特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of CN1298553A publication Critical patent/CN1298553A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
CN99805623A 1998-04-30 1999-04-16 发光半导体器件 Pending CN1298553A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19819543A DE19819543A1 (de) 1998-04-30 1998-04-30 Lichtemissions-Halbleitereinrichtung
DE19819543.5 1998-04-30

Publications (1)

Publication Number Publication Date
CN1298553A true CN1298553A (zh) 2001-06-06

Family

ID=7866418

Family Applications (1)

Application Number Title Priority Date Filing Date
CN99805623A Pending CN1298553A (zh) 1998-04-30 1999-04-16 发光半导体器件

Country Status (5)

Country Link
EP (1) EP1075710A2 (de)
JP (1) JP2002514015A (de)
CN (1) CN1298553A (de)
DE (1) DE19819543A1 (de)
WO (1) WO1999057788A2 (de)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101964387A (zh) * 2010-08-25 2011-02-02 柳翠 Led芯片结构
CN101933171B (zh) * 2008-01-31 2013-10-30 奥斯兰姆奥普托半导体有限责任公司 光电子器件和用于制造光电子器件的方法
US9508891B2 (en) 2014-11-21 2016-11-29 Epistar Corporation Method for making light-emitting device
CN109037405A (zh) * 2018-07-16 2018-12-18 厦门三安光电有限公司 微发光装置及其显示器

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6643304B1 (en) * 2000-07-26 2003-11-04 Axt, Inc. Transparent substrate light emitting diode
US6988554B2 (en) * 2003-05-01 2006-01-24 Cooper Cameron Corporation Subsea choke control system
DE102004026125A1 (de) 2004-05-28 2005-12-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil und Verfahren zu dessen Herstellung
JP2011159672A (ja) * 2010-01-29 2011-08-18 Oki Data Corp 半導体発光装置および画像表示装置
EP2355151A3 (de) * 2010-01-29 2015-12-30 Oki Data Corporation Halbleiterlichtemissionsvorrichtung und Bildgebungsvorrichtung
KR101081196B1 (ko) 2010-03-22 2011-11-07 엘지이노텍 주식회사 발광소자 및 그 제조방법과 발광소자 패키지
DE102012110006A1 (de) * 2012-10-19 2014-04-24 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
DE102015111379A1 (de) 2015-07-14 2017-01-19 Sick Ag Optoelektronischer Sensor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5958877A (ja) * 1982-09-28 1984-04-04 Toshiba Corp 半導体発光装置
US5652178A (en) * 1989-04-28 1997-07-29 Sharp Kabushiki Kaisha Method of manufacturing a light emitting diode using LPE at different temperatures
DE4011145A1 (de) * 1990-04-06 1991-10-10 Telefunken Electronic Gmbh Lumineszenz-halbleiterelement
JPH0766455A (ja) * 1993-08-24 1995-03-10 Shin Etsu Handotai Co Ltd 半導体発光装置
FR2726126A1 (fr) * 1994-10-24 1996-04-26 Mitsubishi Electric Corp Procede de fabrication de dispositifs a diodes electroluminescentes a lumiere visible
JPH08222768A (ja) * 1995-02-17 1996-08-30 Iwasaki Electric Co Ltd 積層型発光ダイオード
US5708280A (en) * 1996-06-21 1998-01-13 Motorola Integrated electro-optical package and method of fabrication

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101933171B (zh) * 2008-01-31 2013-10-30 奥斯兰姆奥普托半导体有限责任公司 光电子器件和用于制造光电子器件的方法
US8686451B2 (en) 2008-01-31 2014-04-01 Osram Opto Semiconductor Gmbh Optical-electronic component and method for production thereof
CN101964387A (zh) * 2010-08-25 2011-02-02 柳翠 Led芯片结构
US9508891B2 (en) 2014-11-21 2016-11-29 Epistar Corporation Method for making light-emitting device
US10236411B2 (en) 2014-11-21 2019-03-19 Epistar Corporation Light-emitting device
US10756960B2 (en) 2014-11-21 2020-08-25 Epistar Corporation Light-emitting device
CN109037405A (zh) * 2018-07-16 2018-12-18 厦门三安光电有限公司 微发光装置及其显示器

Also Published As

Publication number Publication date
DE19819543A1 (de) 1999-11-11
JP2002514015A (ja) 2002-05-14
WO1999057788A2 (de) 1999-11-11
EP1075710A2 (de) 2001-02-14
WO1999057788A3 (de) 1999-12-29

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PB01 Publication
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SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication