WO1999057788A3 - Lichtemissions-halbleitereinrichtung - Google Patents

Lichtemissions-halbleitereinrichtung Download PDF

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Publication number
WO1999057788A3
WO1999057788A3 PCT/DE1999/001164 DE9901164W WO9957788A3 WO 1999057788 A3 WO1999057788 A3 WO 1999057788A3 DE 9901164 W DE9901164 W DE 9901164W WO 9957788 A3 WO9957788 A3 WO 9957788A3
Authority
WO
WIPO (PCT)
Prior art keywords
wavelength
light emitting
layers
reflecting layer
emitting
Prior art date
Application number
PCT/DE1999/001164
Other languages
English (en)
French (fr)
Other versions
WO1999057788A2 (de
Inventor
Walter Wegleiter
Original Assignee
Siemens Ag
Walter Wegleiter
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag, Walter Wegleiter filed Critical Siemens Ag
Priority to EP99927678A priority Critical patent/EP1075710A2/de
Priority to JP2000547678A priority patent/JP2002514015A/ja
Publication of WO1999057788A2 publication Critical patent/WO1999057788A2/de
Publication of WO1999057788A3 publication Critical patent/WO1999057788A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector

Abstract

Die Erfindung beschreibt eine zweifarbige Lichtemissions-Halbleitereinrichtung, die zwischen ihrer Vorderseite und ihrer Rückseite eine erste oberflächenemittierende Lichtemissionsdiode (10) mit einer ersten aktiven Zone (11), welche Strahlung einer ersten Wellenlänge emittiert, und eine zweite oberflächenemittierende Lich temissionsdiode (20) mit einer zweiten aktiven Zone (21), welche Strahlung einer zweiten Wellenlänge emittiert, aufweist, wobei zwischen beiden aktiven Zonen (11, 21) eine erste Reflexionsschicht (12) angeordnet ist, die für die erste Wellenlänge reflektierend und für die zweite Wellenlänge durchlässig ist, und zwischen der zweiten aktiven Zone (21) und der Rückseite eine zweite Reflexionsschicht (22) angeordnet ist, die für die zweite Wellenlänge reflektierend ist. Die Reflexionsschichten bewirken eine bessere Ausnutzung des in Richtung auf die Rückseite abgestrahlten Lichtes beider Dioden und sind vorzugsweise aus einem Mehrfachschichtsystem aus Schichten mit abwechselnd hohem und niedrigem Brechungsindex gebildet, wobei die Schichten vorzugsweise aus einem gitterangepasstem Halbleitermaterial aufgebaut sind.
PCT/DE1999/001164 1998-04-30 1999-04-16 Lichtemissions-halbleitereinrichtung WO1999057788A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP99927678A EP1075710A2 (de) 1998-04-30 1999-04-16 Lichtemissions-halbleitereinrichtung
JP2000547678A JP2002514015A (ja) 1998-04-30 1999-04-16 発光半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19819543A DE19819543A1 (de) 1998-04-30 1998-04-30 Lichtemissions-Halbleitereinrichtung
DE19819543.5 1998-04-30

Publications (2)

Publication Number Publication Date
WO1999057788A2 WO1999057788A2 (de) 1999-11-11
WO1999057788A3 true WO1999057788A3 (de) 1999-12-29

Family

ID=7866418

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1999/001164 WO1999057788A2 (de) 1998-04-30 1999-04-16 Lichtemissions-halbleitereinrichtung

Country Status (5)

Country Link
EP (1) EP1075710A2 (de)
JP (1) JP2002514015A (de)
CN (1) CN1298553A (de)
DE (1) DE19819543A1 (de)
WO (1) WO1999057788A2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6643304B1 (en) * 2000-07-26 2003-11-04 Axt, Inc. Transparent substrate light emitting diode
US6988554B2 (en) * 2003-05-01 2006-01-24 Cooper Cameron Corporation Subsea choke control system
DE102004026125A1 (de) 2004-05-28 2005-12-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil und Verfahren zu dessen Herstellung
DE102008006988A1 (de) 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
JP2011159672A (ja) * 2010-01-29 2011-08-18 Oki Data Corp 半導体発光装置および画像表示装置
EP2355151A3 (de) * 2010-01-29 2015-12-30 Oki Data Corporation Halbleiterlichtemissionsvorrichtung und Bildgebungsvorrichtung
KR101081196B1 (ko) 2010-03-22 2011-11-07 엘지이노텍 주식회사 발광소자 및 그 제조방법과 발광소자 패키지
CN101964387A (zh) * 2010-08-25 2011-02-02 柳翠 Led芯片结构
DE102012110006A1 (de) * 2012-10-19 2014-04-24 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
US9508891B2 (en) 2014-11-21 2016-11-29 Epistar Corporation Method for making light-emitting device
DE102015111379A1 (de) 2015-07-14 2017-01-19 Sick Ag Optoelektronischer Sensor
CN109037405B (zh) * 2018-07-16 2020-11-13 厦门三安光电有限公司 微发光装置及其显示器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5958877A (ja) * 1982-09-28 1984-04-04 Toshiba Corp 半導体発光装置
JPH08222768A (ja) * 1995-02-17 1996-08-30 Iwasaki Electric Co Ltd 積層型発光ダイオード
US5652178A (en) * 1989-04-28 1997-07-29 Sharp Kabushiki Kaisha Method of manufacturing a light emitting diode using LPE at different temperatures

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4011145A1 (de) * 1990-04-06 1991-10-10 Telefunken Electronic Gmbh Lumineszenz-halbleiterelement
JPH0766455A (ja) * 1993-08-24 1995-03-10 Shin Etsu Handotai Co Ltd 半導体発光装置
FR2726126A1 (fr) * 1994-10-24 1996-04-26 Mitsubishi Electric Corp Procede de fabrication de dispositifs a diodes electroluminescentes a lumiere visible
US5708280A (en) * 1996-06-21 1998-01-13 Motorola Integrated electro-optical package and method of fabrication

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5958877A (ja) * 1982-09-28 1984-04-04 Toshiba Corp 半導体発光装置
US5652178A (en) * 1989-04-28 1997-07-29 Sharp Kabushiki Kaisha Method of manufacturing a light emitting diode using LPE at different temperatures
JPH08222768A (ja) * 1995-02-17 1996-08-30 Iwasaki Electric Co Ltd 積層型発光ダイオード

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 008, no. 155 (E - 256) 19 July 1984 (1984-07-19) *
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 12 26 December 1996 (1996-12-26) *

Also Published As

Publication number Publication date
DE19819543A1 (de) 1999-11-11
JP2002514015A (ja) 2002-05-14
CN1298553A (zh) 2001-06-06
WO1999057788A2 (de) 1999-11-11
EP1075710A2 (de) 2001-02-14

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