JP2002512702A - 感光性被覆を有する基板上に集束レーザ放射により構造物を製作する方法と装置 - Google Patents
感光性被覆を有する基板上に集束レーザ放射により構造物を製作する方法と装置Info
- Publication number
- JP2002512702A JP2002512702A JP53188698A JP53188698A JP2002512702A JP 2002512702 A JP2002512702 A JP 2002512702A JP 53188698 A JP53188698 A JP 53188698A JP 53188698 A JP53188698 A JP 53188698A JP 2002512702 A JP2002512702 A JP 2002512702A
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- JP
- Japan
- Prior art keywords
- data
- stripe
- pattern
- exposure
- scanning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
- G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/002—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor using materials containing microcapsules; Preparing or processing such materials, e.g. by pressure; Devices or apparatus specially designed therefor
- G03F7/0022—Devices or apparatus
- G03F7/0025—Devices or apparatus characterised by means for coating the developer
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/161—Coating processes; Apparatus therefor using a previously coated surface, e.g. by stamping or by transfer lamination
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70025—Production of exposure light, i.e. light sources by lasers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/04—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa
- H04N1/10—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa using flat picture-bearing surfaces
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N2201/00—Indexing scheme relating to scanning, transmission or reproduction of documents or the like, and to details thereof
- H04N2201/04—Scanning arrangements
- H04N2201/0402—Arrangements not specific to a particular one of the scanning methods covered by groups H04N1/04 - H04N1/207
- H04N2201/0414—Scanning an image in a series of overlapping zones
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1. 平行な走査線で少なくとも1つの変調レーザビームを走査する一方、該走 査線に対して直角方向に走査ストライプに沿って移動することにより、入力デー タ内に記載されたパターンを感光性表面に描画する方法において、前記方法が次 の段階、すなわち 前記入力データを、ストライプ重複区域を有する走査ストライプに対応する、 部分的に重複するストライプパターンデータに分割する段階と、 予め定められた露光混成機能、それも0%の値で開始かつ終了し、更に走査線 中央近くで100%の値を有する機能を、走査線に沿って得る段階と、 レーザビームを露光混成機能とストライプパターンデータとの積で変調する段 階とを含む方法。 2. 前記露光混成機能が、重複区域で中間値、好ましくは2つ以上の中間値を 有している、請求項1に記載された方法。 3. 前記露光混成機能の形状が、ソフトウェア制御式であり、操作員により変 更可能である、請求項2に記載された方法。 4. 前記ストライプ重複区域の幅が、ソフトウェア制御式であり、操作員によ り変更可能である、請求項1に記載された方法。 5. 各レーザビームに対し、露光混成機能とストライプパターンデータとを組 合わせて単一の変調信号が形成され、この変調信号が単一の変調器に送られる、 請求項1に記載された方法。 6. 変調器に送られたデータが、パターンに依存する時間遅れで適用され、更 にストライプパターンデータ内の移行に時間的に近接して生じる露光混成信号内 の異なる値間の移行が、ストライプパターンデータのタイミングに同期される、 請求項5に記載された方法。 7. 前記ストライプパターンデータが、露光混成機能がゼロでない区域より、 少なくとも1クロック周期だけ広げられる、請求項6に記載された方法。 8. 込み合い検出器が、時間遅れデータをモニタすることで、変調器信号内の 2つの移行が1クロック周期未満だけ離れて何時生じるか指示し、かつ複数移行 のうちの1つ移行のタイミングを変更する、請求項6に記載された方法。 9. テーブルルックアップによって組合わせがなされ、該テーブルルックアッ プがレーザビームパワーの測定により校正される、請求項5に記載された方法。 10.ストライプ重複区域の混成機能内の中間値間の境界が、重複区域内のパタ ーンに対する入力データに応じて同期される、請求項2から請求項9までのいず れか1項に記載された方法。 11.同期化が、露光前に入力データ内の境界に応じて制御される、請求項10 に記載された方法。 12.同期化が、ビーム用に入力データ内で具体化された変調器ドライブ信号に よる移行に対し、露光された区域のエッジに応じて制御される、請求項10に記 載された方法。 13.描画が1つのストライプ内で終了し、かつ隣接ストライプ内の走査線内で 開始される、走査線内のストライプ境界が、ビーム用に入力データ内で具体化さ れた変調器ドライブ信号による移行に同期化される、請求項1に記載された方法 。 14.2つのストライプの重複区域内のビームデータが等しく、かつビームデー タ内のストライプ境界と移行との間の走査線ごとの同期が、描画時に同期回路に よって行われる、請求項13に記載された方法。 15.少なくとも1つの変調レーザビームを平行な走査線で走査する一方、該走 査線に対して直角方向に走査ストライプに沿って移動することにより、入力デー タ内に記載されたパターンを感光性表面に描画する装置において、前記装置が、 入力データを、部分的に重複するストライプ内のパターンに対応するパターン 変調データに変換するためのデータ前処理システムを含み、しかも走査ストライ プがストライプ重複区域を有しており、前記装置が、更に、 走査線の端部では0%値、走査線の中央近くでは100%値を有するディジタ ル式に記憶された露光混成機能と、 パターン変調データと露光混成機能との積によりレーザビームを変調するため の変調手段とを含む、入力データ内に記載されたパターンを感光性表面に描画す る装置。 16.露光混成機能が、ストライプ重複区域に対応する位置用の中間値を含む、 請求項15に記憶された装置。 17.更に、データクロックパルスに対応するより高いアドレス解像度用の変調 データ内での移行を遅延させる時間遅れ回路と、 パターン変調データ内で遅延された移行に、露光混成機能内での移行を同期さ せる同期回路とを含む、請求項15に記憶された装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/SE1997/000134 WO1998033096A1 (en) | 1997-01-29 | 1997-01-29 | Method and apparatus for the production of a structure by focused laser radiation on a photosensitively coated substrate |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2002512702A true JP2002512702A (ja) | 2002-04-23 |
JP2002512702A5 JP2002512702A5 (ja) | 2004-10-28 |
JP4126096B2 JP4126096B2 (ja) | 2008-07-30 |
Family
ID=20405454
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53188698A Expired - Fee Related JP4126096B2 (ja) | 1997-01-29 | 1997-01-29 | 感光性被覆を有する基板上に集束レーザ放射により構造物を製作する方法と装置 |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP0956516B1 (ja) |
JP (1) | JP4126096B2 (ja) |
KR (1) | KR100459813B1 (ja) |
AT (1) | ATE216091T1 (ja) |
AU (1) | AU2048097A (ja) |
DE (1) | DE69711929T2 (ja) |
WO (1) | WO1998033096A1 (ja) |
Cited By (6)
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JP2003057837A (ja) * | 2001-08-21 | 2003-02-28 | Pentax Corp | 多重露光描画装置および多重露光描画方法 |
JP2006295175A (ja) * | 2005-04-08 | 2006-10-26 | Asml Netherlands Bv | コントラスト装置のブレーズ部を用いるリソグラフィ装置及び素子製造方法 |
JP2006338000A (ja) * | 2005-05-31 | 2006-12-14 | Asml Netherlands Bv | 画像データ圧縮に2dランレングス符号化を使用するリソグラフィ装置及びデバイス製造方法 |
JP2007292987A (ja) * | 2006-04-25 | 2007-11-08 | Matsushita Electric Ind Co Ltd | グレイスケールマスクの製造方法及び製造装置 |
US8390787B2 (en) | 2004-12-22 | 2013-03-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2013520820A (ja) * | 2010-02-23 | 2013-06-06 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及びデバイス製造方法 |
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US5221422A (en) * | 1988-06-06 | 1993-06-22 | Digital Equipment Corporation | Lithographic technique using laser scanning for fabrication of electronic components and the like |
DK294189D0 (da) * | 1989-06-15 | 1989-06-15 | Andersen Allan V | Fremgangsmaade og scanningapparat til praeparering af store arbejdsflader, navnlig trykmoenstre paa serigrafi rammer |
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- 1997-01-29 AU AU20480/97A patent/AU2048097A/en not_active Abandoned
- 1997-01-29 KR KR10-1999-7006852A patent/KR100459813B1/ko not_active IP Right Cessation
- 1997-01-29 EP EP97908608A patent/EP0956516B1/en not_active Expired - Lifetime
- 1997-01-29 DE DE69711929T patent/DE69711929T2/de not_active Expired - Lifetime
- 1997-01-29 AT AT97908608T patent/ATE216091T1/de not_active IP Right Cessation
- 1997-01-29 WO PCT/SE1997/000134 patent/WO1998033096A1/en active IP Right Grant
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Cited By (8)
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JP2003057837A (ja) * | 2001-08-21 | 2003-02-28 | Pentax Corp | 多重露光描画装置および多重露光描画方法 |
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JP2006338000A (ja) * | 2005-05-31 | 2006-12-14 | Asml Netherlands Bv | 画像データ圧縮に2dランレングス符号化を使用するリソグラフィ装置及びデバイス製造方法 |
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JP2012108549A (ja) * | 2005-05-31 | 2012-06-07 | Asml Netherlands Bv | 画像データ圧縮に2dランレングス符号化を使用するリソグラフィ装置及びデバイス製造方法 |
JP2007292987A (ja) * | 2006-04-25 | 2007-11-08 | Matsushita Electric Ind Co Ltd | グレイスケールマスクの製造方法及び製造装置 |
JP2013520820A (ja) * | 2010-02-23 | 2013-06-06 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及びデバイス製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR100459813B1 (ko) | 2004-12-04 |
WO1998033096A1 (en) | 1998-07-30 |
KR20010049157A (ko) | 2001-06-15 |
DE69711929D1 (de) | 2002-05-16 |
EP0956516B1 (en) | 2002-04-10 |
JP4126096B2 (ja) | 2008-07-30 |
ATE216091T1 (de) | 2002-04-15 |
DE69711929T2 (de) | 2002-09-05 |
EP0956516A1 (en) | 1999-11-17 |
AU2048097A (en) | 1998-08-18 |
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