JP2002368289A - Resin forming element, image display, and illumination equipment, and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a resin formed element which enables to increase the light extraction efficiency from a light-emitting element and to enlarge angle of visibility, without newly generating a manufacturing cost and a parts cost when manufacturing an image display and illumination equipment, which are formed by arranging resin formed elements, each of which is such that a light- emitting element is coated with a resin, and also to provide an image display and an illumination equipment, and a method of manufacturing the same. SOLUTION: Unevenness is formed on a light-extracting surface of the resin formed element, and the light extraction efficiency and the expansion of an angle of visibility are increased, by suppressing the total reflection and by light scattering on the light-extracting surface. Since the unevenness can be formed, when releasing the resin formed element from a member for temporary retention, there is no generation of new manufacturing cost or cost for new parts.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-formed element in which a light-emitting element is covered with a resin layer, an image display device and an illumination device in which the light-emitting element is arranged, and a method of manufacturing the same. The present invention relates to a resin forming element of a type in which light is diffused by irregularities formed in the resin forming element, an image display device and an illuminating device having the resin forming device arranged therein, and a method of manufacturing the same.

[0002]

2. Description of the Related Art Various methods have been used to increase the brightness of a semiconductor light emitting device. The method can be roughly classified into a method of increasing the light emission efficiency with respect to the input current of the element itself and a method of increasing the light extraction efficiency of efficiently extracting generated light to the outside of the element. The former largely depends on the material constituting the crystal layer, the crystal structure, the quality of crystal growth, the combination of the crystal layers, and the manufacturing process. In the latter case, it is important to consider the structure of the element and the reflection of light due to the structure when the element is mounted on an apparatus substrate, and to take out the generated light without leaking out of the element without attenuating.

As an example of a method for improving luminous efficiency, there is a semiconductor light emitting device having a pyramid-shaped outer shape using a gallium nitride-based compound semiconductor as a material of a crystal layer. In the device, the luminous efficiency with respect to the input current of the device itself is increased, and at the same time, the light extraction efficiency is enhanced by utilizing the multiple reflection of light by electrodes inside the device.

[0004] In particular, as a method of improving the light extraction efficiency,
When the device is packaged, the light totally reflected at the boundary surface is reflected again by the internal mirror in the package and extracted to the outside, and the light generated from the semiconductor light emitting device is directly reflected by the internal mirror in the angle-adjusted package And take it out to the outside. For example, in a semiconductor light emitting device having a structure called a planar type in which a crystal layer is grown on a plane parallel to a crystal growth substrate, in order to suppress a decrease in light extraction efficiency due to total reflection, generated light is packaged. In some cases, a method is employed in which the light is reflected by an included external mirror and aligned in the light extraction direction.

On the other hand, as one of the methods of arranging semiconductor light emitting elements on a device substrate constituting an image display device or a lighting device, a device densely formed on a crystal growth substrate is temporarily provided with a resin layer. A method is employed in which the element is temporarily held on a substrate and the element separated from the temporary substrate together with the resin layer is placed on a device substrate. By covering the element with the resin layer, there is an advantage that the handling of the element becomes easy and the element is protected by the resin layer. At this time, the surface corresponding to the light extraction surface of the resin layer covering the light emitting element is flat.

[0006]

However, in the above-described method of enhancing the light extraction efficiency by the package, a package processing step and additional parts are required.
Manufacturing costs and component costs increase. Further, the size of the light emitting element including the package is increased.

In the case where the light emitting element is manufactured by the method of packaging the light emitting element as described above, the yield of the light emitting element is reduced due to complicated processes and an increase in the number of parts, and the quality may be reduced. . In particular, in the case where a pixel pitch is increased by arranging a large number of miniaturized light emitting elements to manufacture an image display device with high resolution, the yield and the quality are remarkably reduced.

Further, in an image display device or a lighting device in which a plurality of red, green, and blue (Red, Green, Blue: RGB) light emitting diodes are arranged in a light emitting unit, clear display closer to a natural color is desired. It is rare. For that purpose, there is a demand for a technique for increasing the color mixing of the light emitting units in accordance with the technique for increasing the array density of the light emitting diodes, and a technique for manufacturing a light emitting element with enhanced light diffusion is required.

In an image display device or an illuminating device in which a resin-forming element having a structure in which a light-emitting element is covered with a resin layer is arranged, light is extracted outside the element by using a light-transmitting material for the resin layer. Can. However, when the light extraction surface of the resin layer is flat, a part of the light generated by the light emitting element is totally reflected by the light extraction surface, and the light extraction efficiency is reduced. Further, it has been difficult to manufacture an image display device or an illuminating device having insufficient light diffusion properties and high color mixing.

Further, in a semiconductor light emitting device produced by growing a crystal by epitaxial growth on a flat substrate main surface having a specific crystal plane, the boundary surface between the substrate and the crystal layer is flat, and the substrate and the element are bonded. If the lower surface of the crystal layer, which is the surface on the element side, used as the light extraction surface, some of the generated light cannot be extracted to the outside due to total reflection, and this may increase the light extraction efficiency. Can not.

[0011]

According to a method of manufacturing a resin-formed element of the present invention, a resin-formed element comprising a light-emitting element covered with a resin layer is formed on a substrate, and the resin-formed element is separated from the substrate. At the same time, irregularities are formed on the resin layer.

According to the method of manufacturing a resin-formed element of the present invention, the resin-formed element is separated from the substrate on which the resin-formed element is formed, and at the same time, the unevenness is formed on the resin layer on the bonding surface of the resin-formed element with the substrate. Can be. At this time, since the resin layer is formed of a material having a light transmitting property such as polyimide, light can be extracted to the outside of the resin forming element, and the total reflection on the light extraction surface due to the unevenness formed on the resin layer. Can be suppressed. Further, light generated by the unevenness is scattered, so that light can be extracted in a wide range with respect to the light extraction surface.

Further, by using a substrate formed of a material having a light transmitting property, it is possible to irradiate an energy beam from a back side of the substrate to an interface between the resin forming element and the substrate to form irregularities on the bonding surface. it can. At this time, when a plurality of resin forming elements are formed on the substrate, the resin forming element formed at a specific position on the substrate is separated from the substrate by selectively irradiating the energy beam, and simultaneously the resin forming element is formed. Asperities can be formed on the forming element. Further, by changing the area of the energy beam applied to the bonding surface between the resin-forming element and the substrate, a concavo-convex region having a desired area can be formed.

According to a method of manufacturing an image display device or a lighting device of the present invention, a resin-forming element formed by covering a light-emitting element with a resin layer is formed on a substrate, and the resin-forming element is separated from the substrate and the resin-forming element is formed at the same time. An unevenness is formed on a layer, and a plurality of the resin forming elements are arranged on a substrate.

According to this method of manufacturing an image display device or a lighting device, after forming a resin forming element covering a light emitting element on a substrate, the resin is formed on a substrate constituting a display panel of the image display device or the lighting device. In the step of arranging the forming elements, by selectively irradiating the energy beam to the resin forming elements formed on the substrate, the element spacing on the substrate constituting the display panel, or the element arrangement of the transfer destination in the previous step The resin forming elements can be separated from the substrate in accordance with the intervals, and at the same time, the unevenness can be formed on the light extraction surface for each resin forming element. Due to the unevenness, light diffusion can be enhanced, and color mixing of a display panel including a plurality of light-emitting elements can be enhanced. Further, since the unevenness can be formed simultaneously with the step of separating the resin-formed element from the substrate, the number of manufacturing steps and components does not increase.

Further, the present invention is not limited to a light emitting device having the above-mentioned shape and material, but is also applicable to any resin forming device having a structure in which the light emitting device is covered with a resin layer. is there. Further, the method is suitable as a method for manufacturing an image display device or a lighting device having a structure in which a plurality of the elements are arranged and each element emits light in response to a signal.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, a method for manufacturing a resin-formed element and a method for manufacturing an image display device and a lighting device according to the present invention will be described in detail with reference to the drawings.

[First Embodiment] First, a method for manufacturing a resin-formed element covering a light-emitting element will be described. A resin is applied to a substrate 1 serving as a supply source of a resin forming element to form a resin layer 2, and an adhesive layer 3 is formed thereon. At this time, in the present embodiment, a two-layer structure including the resin layer 2 and the adhesive layer 3 is used, but a one-layer structure using a resin layer having a high adhesive force may be used. The substrate 1 may be made of a material having a light transmitting property, and for example, a glass substrate, a quartz glass substrate, a sapphire substrate, or the like can be used. For the resin layer 2, a fluorine coat, a silicone resin, a water-soluble adhesive (for example, polyvinyl alcohol: PVA), a polyimide, or the like can be used. As the adhesive layer 3, a layer made of any one of an ultraviolet-curable adhesive, a thermosetting adhesive, and a thermoplastic adhesive having a light transmitting property can be used. In the present embodiment, a quartz glass substrate is used as the substrate 1, and the polyimide film 2 is formed as a resin layer by about 1 μm to 3 μm.
It is formed in the thickness of. The thickness of the polyimide film in the present embodiment is an example, and it is sufficient that the thickness does not disappear by laser ablation described later. A plurality of light emitting elements 4 are densely formed on an element forming substrate (not shown), and a substrate 1 on which a polyimide film 2 and an adhesive layer 3 are laminated as shown in FIG.
The light emitting element 4 is transferred onto the upper surface. At this time, the light emitting element 4 is transferred so that the light extraction surface of the light emitting element 4 is bonded to the adhesive layer 3. Hereinafter, the plurality of light emitting elements 4 transferred to the substrate 1
One of them will be described.

The light-emitting element 4 is a light-emitting element having a substantially flat outer shape, and is formed mainly of a nitride semiconductor, particularly a GaN-based material. In addition to the flat light emitting element, a light emitting element having a hexagonal pyramid shape, which is mainly made of a nitride semiconductor, particularly a GaN-based material, and has a pointed head formed by selective growth may be used. Further, the concentration of the material constituting the crystal layer is adjusted before the peak is formed, and the light emitting element has a substantially hexagonal truncated pyramid shape having an inclined crystal plane inclined with respect to the main surface of the element forming substrate. May be. In addition, the above-mentioned outer shape, material,
A light emitting element having a structure other than the crystal plane may be used.

Further, an electrode pad 5 on which a metal is deposited is formed on the light emitting element 4. The electrode pad 5 is formed on the surface of the light emitting element 4 opposite to the surface to be bonded to the bonding layer 3. These electrode pads 5 are formed by forming a conductive layer such as a metal or a polycrystalline silicon layer as a material of the electrode pads 5 on the entire surface and patterning the electrodes into a required electrode shape by a photolithography technique. These electrode pads 5 serve as p
It is formed so as to be connected to the electrode and the n-electrode, respectively. The arrangement of the electrode pads 5 in the present embodiment is an example. For example, when the electrode pads are formed of a metal having no light transmission as in the present embodiment, if the electrode pads are formed so as to avoid the light extraction region. In addition, when the material of the electrode pad is formed of a material having light transmittance such as ITO, the electrode pad can be formed in the light extraction region.

Next, a resin such as polyimide having optical transparency is applied, and the light emitting element 4 is coated with the resin layer 6 as shown in FIG.
Cover with. At this time, the surface of the electrode pad 5 is exposed from the resin layer 6 in order to form an electrode for making contact between the electrode pad 5 and an external circuit.

Next, in order to facilitate the contact between the external circuit and the electrode pad 5, the electrode 7 is formed as shown in FIG. The electrode 7 is formed by forming a conductive layer in the same manner as the above-mentioned electrode pad 5 and patterning it into a required electrode shape by photolithography. Also,
For the electrode pad 5 and the electrode 7, a material having light transmittance (IT
O, ZnO, etc.) may be used. If an electrode is formed in advance on the light extraction surface of the light emitting element before transferring the light emitting element, light emission from the light extraction surface can be performed even if a transparent electrode is formed. Since there is no interruption, the patterning accuracy is coarse, a large electrode can be formed, and the patterning process becomes easy.

Next, as shown in FIG. 4, an adhesive layer 8 is formed thereon, the electrode 7 is covered with the adhesive layer 8, and a resin layer 9 is further formed thereon. As the adhesive layer 8, a layer made of any one of an ultraviolet-curing adhesive, a thermosetting adhesive, and a thermoplastic adhesive having a light transmitting property can be used. The resin layer 9 can be made of fluorine coat, silicone resin, water-soluble adhesive (for example, polyvinyl alcohol: PVA), polyimide, or the like. Next, separation between elements is performed by laser beam irradiation or dicing. At this time, as shown in FIG.
1 is formed to a depth at which the substrate 1 is exposed.

Next, a step of peeling the resin-formed element 10 in which the light-emitting element 4 is covered with the resin layer from the substrate 1 will be described. As shown in FIG. 6, the substrate 1 is irradiated with an energy beam from the side of the substrate 1 where the resin forming element 10 is not arranged. Since the substrate 1 is made of quartz glass having optical transparency, the energy beam hardly is absorbed by the substrate 1 and reaches the boundary surface where the resin forming element 10 and the substrate 1 are joined. For the energy beam, for example, excimer laser light or YAG laser light can be used. Polyimide film 2 forming a boundary surface among resin layers forming resin forming element 10
Energy beam reaches the polyimide film 2, the molecular bond chains of the polyimide film 2 are cut by laser ablation, and the adhesive force between the substrate 1 and the resin layer 2 is reduced. As a result, as shown in FIG. 7, the resin forming element 10 can be easily separated from the substrate 1 by mechanical means such as a vacuum chuck by the suction device 12. At this time, since the molecular bond chains are cut, a region having minute irregularities is formed on the surface of the resin layer 2 which was the adhesive surface of the resin layer 2 to the substrate 1.

The minute irregularities are formed in the region irradiated with the energy beam, and can be formed in a range where the resin forming element 10 can be easily peeled off from the substrate 1 as shown in FIG. By adjusting the conditions of the energy beam to be formed, the area and shape of the unevenness can be adjusted. Further, the entire bonding surface between the resin forming element 10 and the substrate 1 may be irradiated with an energy beam to form irregularities.

Irradiation of the polyimide film 2 with an energy beam can form irregularities such that the substrate 1 and the resin forming element 10 can be separated by laser ablation. The thickness of the polyimide film 2 may be such that all molecular bond chains are not cut by laser ablation. In the case of the present embodiment, for example, about 1 μm to 3 μm
It is sufficient that the polyimide film 2 has a thickness in the range of μm.

The surface S is formed by minute irregularities formed on the polyimide film 2 by laser ablation, and the surface S suppresses total reflection of light L generated from the light emitting element 4. Further, the light L is randomly refracted and diffused by the minute unevenness and is taken out of the element. Surface S
Due to the minute irregularities formed on the light extraction surface, total reflection is suppressed as compared with the case where the light extraction surface is flat, and the light L can be extracted at a wide angle with respect to the light extraction surface.

[Second Embodiment] A plurality of resin-forming elements having a light-emitting element covered with a resin layer of the present invention and having irregularities formed on the resin layer at the same time as being separated from a substrate are arranged. A method of manufacturing an image display device will be described. First, the structure of the light emitting device of the present embodiment will be described. FIG. 9 shows a structure of a light emitting element as an example of an element used in the present embodiment. FIG. 9A is a sectional view of the element, and FIG. 9B is a plan view. This light-emitting element is a GaN-based light-emitting diode, for example, an element grown on a sapphire substrate. In such a GaN-based light-emitting diode, laser ablation occurs due to irradiation of laser light transmitted through the substrate, and film peeling occurs at the interface between the sapphire substrate and the GaN-based growth layer due to the phenomenon that GaN nitrogen evaporates. This has the characteristic that the substrate and the element can be easily separated.

First, with respect to the structure, a hexagonal pyramid-shaped GaN layer 32 selectively grown on a base growth layer 31 made of a GaN-based semiconductor layer is formed. Note that an insulating film (not shown) is present on the base growth layer 31 and has a hexagonal pyramid shape G.
The aN layer 32 is formed in a portion where the insulating film is opened by MOCVD or the like. The GaN layer 32 is a pyramid-shaped growth layer covered with an S-plane (1-101 plane) when the main surface of the sapphire substrate used at the time of growth is a C-plane, and is a region doped with silicon. is there. This Ga
The active layer In is formed so as to cover the inclined S surface of the N layer 32.
A GaN layer 33 is formed, and a magnesium-doped GaN layer 34 is formed outside the GaN layer 33. This magnesium-doped GaN layer 34 functions as a cladding layer.

This light emitting diode has a p electrode 35 and an n
An electrode 36 is formed. The p-electrode 35 is formed by depositing a metal material such as Ni / Pt / Au / or Ni (Pd) / Pt / Au formed on the magnesium-doped GaN layer 34. The n-electrode 36 is formed by evaporating a metal material such as Ti / Al / Pt / Au at a portion where the above-mentioned insulating film (not shown) is opened. In the present embodiment, an n-electrode is formed on the back surface side of the base growth layer 31 so as to avoid the light extraction surface,
The formation of the n-electrode 36 becomes unnecessary on the surface of the base growth layer 31.

The GaN-based light emitting diode having such a structure is an element capable of emitting blue light, and can be relatively easily separated from the sapphire substrate by laser ablation, and selectively emits laser light. Thereby, selective peeling is realized. In the light emitting diode of the present embodiment, most of the generated light is
2 is taken out of the device from below through the underlying growth layer 31. In addition, the GaN-based light emitting diode may have a structure in which an active layer is formed on a flat plate or in a band shape.
It may have a pyramid structure in which a C-plane is formed at the upper end. Further, other nitride-based light emitting devices, compound semiconductor devices, or the like may be used.

Next, the step of separating the light emitting element from the substrate on which the light emitting element is formed and covering with a resin layer will be described.
As shown in FIG. 10, a plurality of light emitting diodes 42 are formed in a matrix on the main surface of the first substrate 41.
The size of the light emitting diode 42 can be about 20 μm. The first substrate 41 is a substrate on which a crystal layer forming the light emitting diode 42 is grown. The first substrate 41 is not particularly limited as long as it can form a crystal layer having an inclined crystal plane inclined with respect to the substrate, and various substrates can be used. The first substrate 41 used in the present embodiment is a sapphire substrate having light transmissivity, and is made of a material having a high transmittance with respect to the wavelength of the laser light irradiated on the light emitting diode 42. The first substrate 41 is made of gallium nitride (Ga)
The main surface is a C-plane that is often used when growing a material for an N) -based compound semiconductor. This C surface is 5-6
It includes the plane orientation inclined in the range of degrees. Although the light emitting diode 42 is formed up to the p-electrode and the like, the final wiring is not yet formed, a groove 42g for element isolation is formed, and the individual light emitting diodes 42 can be separated. The formation of the groove 42g is performed by, for example, reactive ion etching. Such a first substrate 41 is opposed to the temporary holding member 43, and selective transfer is performed.

On the surface of the temporary holding member 43 facing the first substrate 41, a release layer 44 and an adhesive layer 45 are formed in two layers. Here, as an example of the temporary holding member 43, a glass substrate, a quartz glass substrate, or the like can be used. As an example of the release layer 44 on the temporary holding member 43,
Fluorine coat, silicone resin, water-soluble adhesive (for example, polyvinyl alcohol: PVA), polyimide, or the like can be used. As an example, the temporary holding member 43
A polyimide film is formed to a thickness of about 1 μm to 3 μm as the release layer 44, and a UV curable adhesive as the adhesive layer 45 is applied to a thickness of about 20 μm.

The adhesive layer 45 of the temporary holding member 43 is adjusted so that the cured region 45s and the uncured region 45y are mixed, and the adhesive layer 45 is positioned such that the light emitting diode 42 for selective transfer is located in the uncured region 45y. Be matched. Adjustment such that the cured region 45s and the uncured region 45y coexist is performed, for example, by selectively applying a UV-curable adhesive to an exposure machine.
The portion where the light emitting diode 42 is transferred by UV exposure at a pitch of 00 μm may be uncured and the other portions may be cured. After such alignment, the light emitting diode 42 at the transfer target position is separated from the first substrate 41 using laser ablation. Since the GaN-based light-emitting diode 42 is decomposed into metallic Ga and nitrogen at the interface with sapphire, it can be relatively easily separated. Excimer laser light, harmonic YA
G laser light or the like is used.

By the peeling using the laser ablation, the light emitting diode 42 for the selective irradiation becomes G
It is separated at the interface between the aN layer and the first substrate 41 and is transferred so as to pierce the p-electrode into the adhesive layer 45 on the opposite side. The other light emitting diodes 42 in the area not irradiated with the laser light are the areas 45 s where the corresponding adhesive layer 45 is cured, and are transferred to the temporary holding member 43 side because the laser light is not irradiated. Never. In FIG. 10, only one light emitting diode 42 is selectively irradiated with laser light. However, it is assumed that the light emitting diode 42 is similarly irradiated with laser light in a region separated by n pitches. Due to such selective transfer, the light emitting diodes 42 are arranged on the temporary holding member 43 at a greater distance than when arranged on the first substrate 41.

The light emitting diode 42 includes a temporary holding member 43.
The back surface of the light emitting diode 42 is on the n-electrode side (cathode electrode side) while being held by the adhesive 45, and is removed and washed so that there is no resin (adhesive) on the back surface of the light emitting diode 42. Therefore, if the electrode pad 46 is formed as shown in FIG. 11, the electrode pad 46 is electrically connected to the back surface of the light emitting diode 42.

As an example of cleaning the adhesive layer 45, the adhesive resin is etched by oxygen plasma, and is cleaned by UV ozone irradiation. In addition, when the GaN-based light-emitting diode is separated from the first substrate 41 made of a sapphire substrate by laser light, it is necessary to etch the Ga, since Ga is deposited on the separated surface, and the NaOH aqueous solution or It will be done with dilute nitric acid. After that, the electrode pads 46 are patterned. At this time, the electrode pad on the cathode side can be about 60 μm square. As the electrode pad 46, a transparent electrode (ITO, ZnO-based or the like) or a material such as Al / Cu is used. In the case of a transparent electrode, even if the back surface of the light emitting diode is largely covered, light emission is not blocked, so that patterning accuracy is coarse, a large electrode can be formed, and the patterning process becomes easy.

Next, from the first temporary holding member 43 to the second
The step of transferring the light emitting diode 42 to the temporary holding member 47 will be described. The release layer 48 and the light-emitting diode 42 to be transferred and the release layer 48 are formed on the second temporary holding member 47 to which the light-emitting diode 42 is transferred. The release layer 48 can be formed using a light-transmitting resin such as a fluorine coat, a silicone resin, a water-soluble adhesive (for example, PVA), and polyimide. As the second temporary holding member 47, a glass substrate can be used as an example.

The temporary holding member 43 having the release layer 48 formed thereon is opposed to the temporary holding member 43, and the adhesive layer 45 is brought into close contact with the release layer 48. In this state,
In order to separate the temporary holding member 43 and the release layer 44, FIG.
As shown in FIG. 2, the temporary holding member 43 is irradiated with excimer laser light from the side opposite to the surface on which the release layer 44 is formed. At this time, the release layer 44 is
Excimer laser light is irradiated from the back surface of the surface on which is formed. Since the temporary holding member 43 is a glass substrate, the excimer laser light is hardly absorbed by the temporary holding member 43 and is applied to the vicinity of the interface between the release layer 44 and the temporary holding member 43, and laser ablation occurs. As a result, as shown in FIG. 13, the adhesive strength between the release layer 44 and the temporary holding member 43 is reduced, and only the temporary holding member 43 includes the light emitting diode 42 and has a structure in which the release layer 44 is the uppermost layer. Separated. Thereby, each light emitting diode 42 is transferred to the second temporary holding member 47 side.

At this time, since the release layer 44 has a sufficient film thickness, it absorbs all the energy of the excimer laser light transmitted through the temporary holding member 43. Therefore, the excimer laser beam does not reach the layer below the release layer 44, and the adhesive layer 45 or the release layer 48 does not deteriorate.

FIG. 14 shows that the light emitting diode 42 is transferred from the temporary holding member 43 to the second temporary holding member 47 to form a via hole 50 on the anode electrode (p electrode) side. This shows a state in which the formed adhesive layer 45 made of resin is diced. As a result of this dicing, an element isolation groove 51 is formed, and the light emitting diode 42 is divided for each element, and the resin forming element 100 adhered to the temporary holding member 47.
Form the required shape. The element isolation groove 51 is composed of a plurality of parallel lines extending vertically and horizontally as a plane pattern in order to separate the light emitting diodes 42 in a matrix. The surface of the second temporary holding member 47 faces the bottom of the element isolation groove 51.

The step of forming the anode electrode pad 49 of the light emitting diode 42 and forming the element isolation groove 51 will be described in more detail. As an example of this process, the surface of the second temporary holding member 47 is etched with oxygen plasma until the surface of the light emitting diode 42 is exposed. First, the via hole 50 can be formed by using excimer laser light, harmonic YAG laser light, or carbon dioxide laser light. At this time, the via hole is about 3 to 7 μm, for example.
Will open the diameter. The anode electrode pad is Ni
/ Pt / Au or the like. In the dicing process, dicing using a normal blade is performed, and when a narrow notch having a width of 20 μm or less is required, processing using a laser beam is performed. Excimer laser light, harmonic YAG laser light, carbon dioxide laser light, or the like can be used as the laser light. The cut width depends on the size of the light emitting diode 42 covered with the adhesive layer 45 made of resin in the pixel of the image display device. As an example,
A groove having a width of about 40 μm is formed by an excimer laser, and the resin forming element 100 has a required shape.

Next, a process of peeling the resin forming element 100 in which the light emitting diode 42 is formed from the second temporary holding member 47 and simultaneously forming irregularities on the resin layer 48 will be described. First, as shown in FIG.
0 is separated from the second temporary holding substrate 47 and is aligned with the suction hole 55 for relocation. The suction holes 55 are opened in a matrix at the pixel pitch of the image display device, so that a large number of resin forming elements 100 can be collectively sucked. The opening diameter at this time is, for example, about φ100 μm.
To open a matrix with a pitch of 600 μm, and can collect about 300 pieces at a time. The member of the suction hole 55 at this time is, for example, one formed by Ni electroforming or SUS
A metal plate 52 made by etching a hole is used.

Next, as shown in FIG. 16, an energy beam is applied to the vicinity of the interface between the resin forming element 100 and the second temporary holding member 47 positioned in the suction hole 55. The energy beam is applied to the second temporary holding member 47 from the side opposite to the surface on which the resin forming element 100 is bonded. At this time, since the second temporary holding member 47 is a glass substrate having optical transparency, the energy beam is hardly absorbed by the second temporary holding member 47, and the resin forming element 100 and the holding member 47 are not absorbed. Is irradiated on the peeling layer 48 near the interface. The peel strength of the release layer 48 irradiated with the energy beam with the temporary holding member 47 is reduced by laser ablation.

In the present embodiment, the edge of the suction hole 55 and the resin forming element 100 are tightly contacted with no gap so as to seal the suction hole 55, but the resin forming element 100 is slightly moved from the edge of the suction hole 55. The suction chamber is kept at a negative pressure, the suction chamber is controlled to a negative pressure, and the resin forming element 100 and the temporary holding member 47 are held.
After the adhesive strength of the resin forming element 100 decreases, the resin forming element 100 is inserted into the suction hole 5.
5 may be adsorbed.

At this time, the temporary holding member 47 of the release layer 48
Are formed near the interface with the resin forming element 100.
Is peeled off from the temporary holding member 47, the uneven layer 101 generated by the laser ablation forms a non-flat and rough surface in the peeling layer 48 near the above-described interface. In the present embodiment, an excimer laser beam is used as an energy beam.
Laser light or the like can be used.

Further, the release layer 4 on which the uneven portions 101 are formed
Since 8 corresponds to a surface from which light generated from the light emitting diode 42 is extracted, total reflection of light generated by the light emitting diode 42 is suppressed by the uneven portion 101 of the peeling layer 48,
The light extraction efficiency can be enhanced as compared with the case where the light extraction surface is flat, and light can be extracted outside the element at a wide range of angles by light scattering.

Next, the resin forming element 100 and the holding member 47
By controlling the suction chamber 54 connected to the suction hole 55 to a negative pressure in a state where the adhesive force of the
Can be adsorbed. Next, the light emitting diode 42 is separated from the second temporary holding member 47 by using a mechanical means. FIG. 17 is a diagram showing that the light emitting diodes 42 arranged on the second temporary holding member 47 are picked up by the suction device 53. At this stage, the light emitting diode 42 is covered with an adhesive layer 45 made of resin, and the lower surface of the resin forming element 100 is formed with a large number of uneven portions 101 on the surface separated from the holding member 47 so as to be a rough surface. I have. The surface in close contact with the suction hole 55 is substantially flattened,
The selective adsorption by the adsorption device 53 can be easily advanced.

FIG. 18 is a view showing a state where the resin forming element 100 is transferred to a second substrate 60 which is an apparatus substrate constituting an image display device. For the second substrate, a material having light transmittance such as a glass substrate is used. When the resin forming element 100 is mounted on the second substrate 60, the adhesive layer 56 is applied to the second substrate 60 in advance, and the light emitting diode 4
The area of the adhesive layer 56 for mounting 2 is cured, and the light emitting diodes 42 are fixed to the second substrate 60 and arranged. At this time, the suction chuck 54 of the suction device 53 is in a state of high positive pressure, that is, the resin forming element 100 is
The pressure is such that a force in the direction of detaching from the light-emitting element 5 is applied, and the coupling state of the adsorption device 53 and the light-emitting diode 42 by adsorption is released. Here, the adhesive layer 56 is made of a thermosetting adhesive, a thermoplastic adhesive, or the like. The positions where the light emitting diodes 42 are arranged are separated from the arrangement on the temporary holding members 43 and 47. At that time, energy (laser light 73) for curing the resin of the adhesive layer 56 is supplied from the back surface of the second substrate 60.

A resin forming chip (light emitting diode 42) for irradiating and transferring a laser beam 73 from the back surface of the second substrate 60
And only the adhesive layer 56 corresponding to the adhesive layer 45) is heated. As a result, when the adhesive layer 56 is a thermoplastic adhesive, the adhesive layer 56 at that portion is softened, and then cooled and cured to fix the resin-formed chip on the second substrate 60. Similarly, even when the adhesive layer 56 is a thermosetting adhesive, only the adhesive layer 56 irradiated with the laser beam 73 is cured, and the resin forming element 100 is fixed on the second substrate 60. .

Further, an electrode layer 57 also functioning as a shadow mask is provided on the second substrate 60, and the electrode layer 57 is heated by irradiating a laser beam 73 to indirectly heat the adhesive layer 56. You may do it. In particular, if the black chrome layer 58 is formed on the surface of the electrode layer 57 on the screen side, that is, on the side where the viewer of the image display device is present, the contrast of the image can be improved and the black chrome layer 58 By increasing the energy absorption rate, the adhesive layer 56 can be efficiently heated by the selectively irradiated laser light 73.

FIG. 19 shows light emitting diodes 4 of three colors of RGB.
FIG. 6 is a view showing a state in which resin forming elements each including 2, 61 and 62 are arranged on a second substrate 60 and an insulating layer 59 is applied. Using the suction device 53 used in FIGS. 15 to 18 as it is, by simply shifting the mounting position on the second substrate 60 to the position of that color, forming a pixel of three colors while keeping the pixel pitch constant. it can. As the insulating layer 59, a transparent epoxy adhesive, a UV curable adhesive, polyimide, or the like can be used. Light emitting diodes 42, 6
1 and 62 do not necessarily have to have the same shape. In FIG. 19, the red light-emitting diode 61 has a structure without a hexagonal pyramid GaN layer, and has a different shape from the other light-emitting diodes 42 and 62, but at this stage, each light-emitting diode is already a resin forming element. Adhesive layer 45 made of resin
And the same handling is realized despite the difference in element structure. Further, by the above-described steps, a rough surface due to minute unevenness is formed on the light extraction surface of each resin forming element.

FIG. 20 is a diagram showing a wiring forming step. Openings 65, 66, 67, 68, 69, 70 in insulating layer 59
And wirings 63, 64, 71 for connecting the anode and cathode electrode pads of the light emitting diodes 42, 61, 62 and the wiring electrode layer 57 of the second substrate 60. The openings, ie, via holes, formed at this time are the electrode pads 46 of the light emitting diodes 42, 61, 62,
Since the area of 49 is large, the shape of the via hole is large, and the positional accuracy of the via hole can be formed with coarser accuracy than the via hole formed directly in each light emitting diode. At this time, the via holes are about 60 μm square electrode pads 46 and 49.
On the other hand, those having a diameter of about φ20 μm can be formed. In addition, there are three types of via hole depths: one that connects to the wiring board, one that connects to the anode electrode, and one that connects to the cathode electrode. . After that, a protective layer is formed on the wiring, and the panel of the pixel display device is completed. At this time, a similar material such as the insulating layer 59 and a transparent epoxy adhesive can be used for the protective layer. This protective layer is cured by heating and completely covers the wiring. Thereafter, a driver panel is manufactured by connecting a driver IC from the wiring at the end of the panel.

Through the above steps, an image display device having a high light extraction efficiency and a large viewing angle due to the effect of light scattering is completed.

[0055]

According to the resin forming element, the image display device and the lighting device of the present invention and the method of manufacturing the same, light generated from the light emitting element is formed by forming irregularities on the surface of the resin layer which is the light extraction surface. Among them, light that could not be extracted to the outside due to total reflection can be extracted, and furthermore, light can be extracted at a wide range of angles with respect to the light extraction surface by light diffusion due to unevenness.
In addition, by arranging a large number of the resin forming elements of the present invention, it is possible to manufacture an image display device and a lighting device having high light extraction efficiency and a large size.

Further, according to the resin forming element, the image display device and the lighting device of the present invention, and the method of manufacturing the same, the process of arranging the resin forming device on the device substrate constituting the image display device or the lighting device can be performed temporarily. Since the resin-forming element can be peeled off from the substrate to which the resin-forming element is to be transferred, the unevenness can be formed at the same time, so that there is no production cost such as a new process or capital investment. Further, since there is no need to change the structure of the resin-formed element, such as adding a component, no component cost is generated. Therefore, a high-quality image display device and a lighting device can be manufactured without complicating the process and increasing the cost.

[Brief description of the drawings]

FIG. 1 is a process cross-sectional view showing a light-emitting device transfer process in a process of manufacturing a resin-formed device according to a first embodiment of the present invention.

FIG. 2 is a process cross-sectional view showing a process of forming a resin layer in a process of manufacturing the resin-formed element according to the first embodiment of the present invention.

FIG. 3 is a process cross-sectional view showing a process of forming an electrode in a process of manufacturing the resin-formed element according to the first embodiment of the present invention.

FIG. 4 is a process cross-sectional view illustrating a process of forming a resin layer in a process of manufacturing the resin-formed element according to the first embodiment of the present invention.

FIG. 5 is a process cross-sectional view showing a process of forming an element isolation groove in a process of manufacturing the resin-formed device according to the first embodiment of the present invention.

FIG. 6 is a process cross-sectional view showing a process of irradiating an energy beam in a process of manufacturing the resin forming element according to the first embodiment of the present invention.

FIG. 7 is a process cross-sectional view showing a step of peeling the resin forming element in the manufacturing step of the resin forming element according to the first embodiment of the present invention.

FIG. 8 is a perspective view of the resin forming element according to the first embodiment of the present invention.

FIGS. 9A and 9B are a structural cross-sectional view and a structural plan view showing a structure of a semiconductor light emitting device according to a second embodiment of the present invention. FIGS.

FIG. 10 is a process cross-sectional view showing a process of transferring a semiconductor light emitting element to a temporary holding member in a manufacturing process of the image display device according to the second embodiment of the present invention.

FIG. 11 is a process cross-sectional view showing a process of forming an n-electrode of a semiconductor light emitting element in a process of manufacturing an image display device according to a second embodiment of the present invention.

FIG. 12 is a process cross-sectional view showing a process of irradiating an excimer laser in a manufacturing process of the image display device according to the second embodiment of the present invention.

FIG. 13 is a process cross-sectional view showing a process of peeling a temporary holding member in a manufacturing process of the image display device according to the second embodiment of the present invention.

FIG. 14 is a process cross-sectional view illustrating a process of forming a resin forming element in a manufacturing process of the image display device according to the second embodiment of the present invention.

FIG. 15 is a process cross-sectional view showing a process of aligning a suction hole and a resin forming element in a manufacturing process of the image display device according to the second embodiment of the present invention.

FIG. 16 is a process cross-sectional view illustrating a process of irradiating an energy beam in a manufacturing process of the image display device according to the second embodiment of the present invention.

FIG. 17 is a process cross-sectional view showing a process of peeling a resin forming element in a manufacturing process of the image display device according to the second embodiment of the present invention.

FIG. 18 is a process cross-sectional view showing a process of fixing a resin forming element to a device substrate in a process of manufacturing the image display device according to the second embodiment of the present invention.

FIG. 19 is a process cross-sectional view showing a process of arranging the resin forming elements on the device substrate in the manufacturing process of the image display device according to the second embodiment of the present invention.

FIG. 20 is a process cross-sectional view illustrating a process of forming a wiring in a manufacturing process of the image display device according to the second embodiment of the present invention.

[Explanation of symbols]

 Reference Signs List 1 substrate 4 light emitting element 10, 100 resin forming element 41 first substrate 42 light emitting diode 43, 47 temporary holding member 60 second substrate 101 uneven part

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Kunihiko Hayashi 6-7-35 Kita-Shinagawa, Shinagawa-ku, Tokyo Inside Sony Corporation (72) Inventor Hiroshi Oba 6-7-35 Kita-Shinagawa, Shinagawa-ku, Tokyo Sony Corporation F term (reference) 5C094 AA10 AA43 AA44 BA25 CA19 DA14 DA15 FB15 5F041 AA03 CA40 CA46 CA65 CA74 DA01 DA43 FF01 FF11

Claims (19)

[Claims] 1. A resin, wherein a resin forming element comprising a light emitting element covered with a resin layer is formed on a substrate, the resin forming element is separated from the substrate, and irregularities are formed on the resin layer. A method for manufacturing a forming element. 2. The method according to claim 1, wherein the unevenness is formed by irradiating an energy beam. 3. The method according to claim 1, wherein the plurality of resin forming elements formed on the substrate are selectively irradiated with the energy beam and separated from the substrate. Method. 4. The method according to claim 1, wherein the unevenness is formed on a part or the whole of a boundary surface between the resin forming element and the substrate. 5. The method according to claim 2, wherein the energy beam is one of an excimer laser beam and a YAG laser beam. 6. The method according to claim 1, wherein the resin layer has a light transmitting property. 7. The method according to claim 6, wherein the resin layer is formed of polyimide. 8. The method according to claim 1, wherein the substrate has a light transmitting property. 9. The method according to claim 1, wherein the light emitting element is made of a nitride semiconductor material. 10. The method according to claim 9, wherein the nitride semiconductor material is a GaN-based material. 11. The method according to claim 1, wherein the light emitting element has a pointed head structure or a flat plate structure. 12. A resin-forming element having a light-emitting element covered with a resin layer, being separated from a substrate and having irregularities formed in the resin layer. 13. The resin-forming element according to claim 12, wherein said unevenness is formed by irradiating said resin layer with an energy beam. 14. A method for forming a plurality of said resin forming elements, comprising forming a resin forming element comprising a light emitting element covered with a resin layer on a substrate, separating said resin forming element from said substrate and forming irregularities in said resin layer. A method for manufacturing an image display device, comprising arranging elements on a substrate. 15. A method for forming a plurality of the resin-forming elements, comprising forming a resin-forming element formed by covering a light-emitting element with a resin layer on a substrate, separating the resin-forming element from the substrate, and forming irregularities in the resin layer. A method for manufacturing a lighting device, comprising arranging elements on a substrate. 16. An image display device comprising a light emitting element covered with a resin layer, and arranging a plurality of resin forming elements separated from a substrate and having irregularities formed in the resin layer. 17. An illuminating device having a light emitting element covered with a resin layer, wherein a plurality of resin forming elements separated from a substrate and having irregularities formed in the resin layer are arranged. 18. The image display device according to claim 16, wherein said irregularities are formed by irradiating an energy beam. 19. The image display device according to claim 17, wherein said unevenness is formed by irradiating an energy beam.