GR1008582B - SIC SUBSTRUCTURE FORMATION CONSTRUCTIONS AND CONSTRUCTION OF LIGHT EMISSION DEVICES - Google Patents

SIC SUBSTRUCTURE FORMATION CONSTRUCTIONS AND CONSTRUCTION OF LIGHT EMISSION DEVICES

Info

Publication number
GR1008582B
GR1008582B GR20140100424A GR20140100424A GR1008582B GR 1008582 B GR1008582 B GR 1008582B GR 20140100424 A GR20140100424 A GR 20140100424A GR 20140100424 A GR20140100424 A GR 20140100424A GR 1008582 B GR1008582 B GR 1008582B
Authority
GR
Greece
Prior art keywords
led
sic
tablet
formation
segment
Prior art date
Application number
GR20140100424A
Other languages
Greek (el)
Inventor
Εμμανουηλ Ιωαννη Στρατακης
Κωνσταντινος Εμμανουηλ Φωτακης
Georgy Shafeev
Ekaterina Barmina
Original Assignee
Ιδρυμα Τεχνολογιας Και Ερευνας (Ιτε),
Energomashtechnika (Emt Ltd),
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ιδρυμα Τεχνολογιας Και Ερευνας (Ιτε),, Energomashtechnika (Emt Ltd), filed Critical Ιδρυμα Τεχνολογιας Και Ερευνας (Ιτε),
Priority to GR20140100424A priority Critical patent/GR1008582B/en
Priority to PCT/GR2015/000040 priority patent/WO2016016670A1/en
Publication of GR1008582B publication Critical patent/GR1008582B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

Η εφεύρεση προτείνει μια μέθοδο κατασκευής για την ενίσχυση της φωτεινότητας διατάξεων LED με βάση το SiC, χρησιμοποιώντας διπλή έκθεση της επιφάνειας εκπομπής του φωτός μιας διάταξης LED ή τμήματος LED ή δισκίου SiC, σε κατάλληλης ενέργειας γραμμικά πολωμένης ακτινοβολίας ενός femtosecond λέιζερ. Η πρώτη έκθεση έχει ως αποτέλεσμα το σχηματισμό ενός μοτίβου παράλληλων περιοδικών αυλακώσεων επί της επιφάνειας SiC. Στη συνέχεια, η διάταξη LED, ή το τμήμα LED, ή το δισκίο SiC περιστρέφεται κατά 90 μοίρες και στη συνέχεια ακτινοβολείται για δεύτερη φορά. Η διπλή έκθεση καταλήγει στο σχηματισμό μιας συστοιχίας περιοδικών νανοαυλακώσεων και κοιλάδων πάνω στην επιφάνεια SiC. Αυτές οι νανοαυλακώσεις ενεργούν ως αντι-ανακλαστική επίστρωση λόγω ομαλής μεταβολής του δείκτη διάθλασης από την τιμή του στον κρύσταλλο σε αυτή του αέρα και έχει ως αποτέλεσμα την αύξηση της εσωτερικής κβαντικής απόδοσης του LED. Η μέθοδος κατασκευής μπορεί να πραγματοποιηθεί κατά τη διάρκεια LED ή πριν ή μετά την παρασκευή της διάταξης LED. Η διαδικασία κατασκευής μπορεί να πραγματοποιηθεί στον αέρα ή μετά τη βύθιση διάταξης LED, ή τμήματος LED, ή δισκίου SiC σε υγρό.The invention proposes a method of fabrication to enhance the brightness of SiC-based LED devices, using double exposure of the light emitting surface of an LED device or LED segment or SiC tablet, to appropriate linear polarized energy of a femtosecond laser. The first exposure results in the formation of a pattern of parallel periodic grooves on the SiC surface. Then, the LED assembly, or LED segment, or SiC tablet is rotated 90 degrees and then irradiated a second time. The double exposure results in the formation of an array of periodic nanoseconds and valleys on the SiC surface. These nanoseconds act as an anti-reflective coating due to the smooth change of the refractive index from its value in the crystal to that of the air, resulting in an increase in the internal quantum efficiency of the LED. The manufacturing method can be carried out during LED or before or after the LED assembly is manufactured. The manufacturing process can be carried out in the air or after immersing an LED assembly, or LED segment, or SiC tablet in liquid.

GR20140100424A 2014-07-31 2014-07-31 SIC SUBSTRUCTURE FORMATION CONSTRUCTIONS AND CONSTRUCTION OF LIGHT EMISSION DEVICES GR1008582B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GR20140100424A GR1008582B (en) 2014-07-31 2014-07-31 SIC SUBSTRUCTURE FORMATION CONSTRUCTIONS AND CONSTRUCTION OF LIGHT EMISSION DEVICES
PCT/GR2015/000040 WO2016016670A1 (en) 2014-07-31 2015-07-31 Ablating sic wafer configurations and manufacturing light emitting diode (led) devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GR20140100424A GR1008582B (en) 2014-07-31 2014-07-31 SIC SUBSTRUCTURE FORMATION CONSTRUCTIONS AND CONSTRUCTION OF LIGHT EMISSION DEVICES

Publications (1)

Publication Number Publication Date
GR1008582B true GR1008582B (en) 2015-10-06

Family

ID=52815024

Family Applications (1)

Application Number Title Priority Date Filing Date
GR20140100424A GR1008582B (en) 2014-07-31 2014-07-31 SIC SUBSTRUCTURE FORMATION CONSTRUCTIONS AND CONSTRUCTION OF LIGHT EMISSION DEVICES

Country Status (2)

Country Link
GR (1) GR1008582B (en)
WO (1) WO2016016670A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7232840B2 (en) * 2018-02-28 2023-03-03 バイオミメティック プライベート カンパニー Use of lasers to reduce reflection of transparent solids, coatings and devices using transparent solids
CN111157671B (en) * 2020-01-17 2021-02-19 南京航空航天大学 Method for simulating ablation morphology of ceramic matrix composite material in high-temperature gas environment

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002368289A (en) * 2001-06-12 2002-12-20 Sony Corp Resin forming element, image display, and illumination equipment, and method of manufacturing the same
JP2005150261A (en) * 2003-11-12 2005-06-09 Matsushita Electric Works Ltd Light emitting element provided with multiplex reflection preventing structure and manufacturing method therefor
US20080179611A1 (en) * 2007-01-22 2008-07-31 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
EP2120272A1 (en) * 2007-03-05 2009-11-18 Fujifilm Corporation Light emitting element, method for manufacturing the light emitting element, optical element and method for manufacturing the optical element
EP2466651A1 (en) * 2010-10-08 2012-06-20 Enraytek Optoelectronics Co., Ltd. Light emitting device and manufacturing method thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100379043C (en) 2005-04-30 2008-04-02 中国科学院半导体研究所 Full angle reflector structure GaN base light emitting diode and producing method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002368289A (en) * 2001-06-12 2002-12-20 Sony Corp Resin forming element, image display, and illumination equipment, and method of manufacturing the same
JP2005150261A (en) * 2003-11-12 2005-06-09 Matsushita Electric Works Ltd Light emitting element provided with multiplex reflection preventing structure and manufacturing method therefor
US20080179611A1 (en) * 2007-01-22 2008-07-31 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
EP2120272A1 (en) * 2007-03-05 2009-11-18 Fujifilm Corporation Light emitting element, method for manufacturing the light emitting element, optical element and method for manufacturing the optical element
EP2466651A1 (en) * 2010-10-08 2012-06-20 Enraytek Optoelectronics Co., Ltd. Light emitting device and manufacturing method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
E.V. BARMINA ET. AL: "Nanostructuring of single crystal silicon carbide by oicosecond UV laser radiation", QUANTUM ELECTRONICS, vol. 43, no. 12, 1 January 2013 (2013-01-01), pages 1091 - 1093, XP002739765 *

Also Published As

Publication number Publication date
WO2016016670A1 (en) 2016-02-04

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Effective date: 20151209