WO2016016670A1 - Ablating sic wafer configurations and manufacturing light emitting diode (led) devices - Google Patents

Ablating sic wafer configurations and manufacturing light emitting diode (led) devices Download PDF

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Publication number
WO2016016670A1
WO2016016670A1 PCT/GR2015/000040 GR2015000040W WO2016016670A1 WO 2016016670 A1 WO2016016670 A1 WO 2016016670A1 GR 2015000040 W GR2015000040 W GR 2015000040W WO 2016016670 A1 WO2016016670 A1 WO 2016016670A1
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Prior art keywords
sic wafer
configuration
wafer configuration
sic
ablating
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PCT/GR2015/000040
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French (fr)
Inventor
Emmanouil STRATAKIS
Costas Fotakis
Georgy Shafeev
Ekaterina Barmina
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Foundation For Research And Technology Hellas Institute Of Electronic Structure And Lasers
Energomashtechnika (Emt Ltd)
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Publication of WO2016016670A1 publication Critical patent/WO2016016670A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

Definitions

  • the invention is related to the semiconductor processing field, and particularly relates to a manufacturing method of LED.
  • LEDs suffer from low internal quantum efficiency. Large amount of energy is wasted inside LED devices, causing both energy waste and shorter lifetime. Light losses in LED devices are due to high refractive index of their crystalline semiconductor components. Therefore, improving the luminous efficiency is a matter of critical importance for LED devices.
  • a method of enhancement of LED luminosity is known, which is based on an inverse architecture of the device (EP 2 466 65 1 A l ).
  • the light produced by LED comes from SiC surface with numerous depressions with pyramids made by chemical etching.
  • the providing a substrate and forming a plurality of pyramid structures on the substrate includes: providing a substrate; depositing a dielectric layer on the substrate and patterning the dielectric layer to form a grid-shaped hard mask; etching the substrate, with the hard mask as an etching mask, to form pyramid structures; and removing the hard mask.
  • the etching the substrate with the hard mask as an etching mask to form pyramid structures includes: wet etching the substrate
  • the objective of this invention is to provide a simple and efficient method of mask-less patterning of SiC for improved luminosity of LED devices.
  • the present invention provides a maskless manufacturing method for improvement of luminosity of LED devices, based on laser ablation of a surface of a SiC wafer, to be used as a light exiting surface of an LED, by ultra-short laser pulses in air or liquid medium.
  • This nonlinear process results in the formation of a regular array of grooves or depressions on the crystal surface of the SiC wafer.
  • the result is grooves having a lateral size much smaller than the wavelength of visible light. Since the lateral size of grooves is much smaller than the wavelength of visible light, they act as anti-reflecting coating due to smooth variation of the refractive index from its value in the crystal to air.
  • a method of ablating a SiC wafer configuration comprises: providing the SiC wafer configuration on a holder; exposing a surface of the SiC wafer configuration to a focused laser radiation; relatively translating the SiC wafer configuration in a first horizontal direction during the exposure to generate a first array of periodic rectangular grooves on the SiC wafer configuration surface.
  • the SiC wafer configuration By translating the SiC wafer configuration during the irradiation exposure, it is possible to generate an array of periodic rectangular grooves in the SiC wafer configuration surface.
  • the distance between and size of the grooves may depend on the speed of translation, the wavelength of the irradiation, the fluence of the irradiation and/or the duration of the laser pulse.
  • the method of ablating may further comprise rotating the SiC wafer configuration by a preset angle around the axis of radiation; exposing the surface of the SiC wafer configuration to the focused laser radiation; relatively translating the rotated SiC wafer configuration in the first horizontal direction during the exposure to generate intersections of two arrays of periodic rectangular grooves on the SiC wafer configuration surface.
  • SUBSTITUTE SHEET to generate a pattern of nanogrooves that may correspond to intersections of two arrays of periodic rectangular grooves. Seen from another perspective, the resulting ablated surface may comprise a plurality of pyramid or finger-like nanostructures separated by nanogrooves in two dimensions.
  • the SiC wafer configuration comprises at least a SiC wafer.
  • the method may be applied on a SiC wafer or on a component (e.g. an LED component) that comprises a SiC wafer.
  • the SiC wafer configuration may comprise a SiC wafer on a LED device. That is, the method may be implemented even in a post-fabrication stage of an LED device to improve the luminosity of the LED device.
  • the nrfr may increase and therefore the period L decreases and, thus, smaller nanostructures may be formed.
  • a manufacturing configuration for ablating a SiC wafer configuration comprises an irradiation module, a SiC wafer configuration holder and a translation module.
  • the irradiation module has a pulsed laser and an optical system for focusing a laser beam from the pulsed laser.
  • the SiC wafer configuration holder is configured to hold the SiC wafer configuration.
  • the translation module has at least a horizontal translation stage configured to relatively displace the SiC wafer configuration holder in a first horizontal direction.
  • the manufacturing configuration may be used to generate a fi rst array of periodic rectangular grooves on a SiC wafer configuration surface.
  • the translation module may further comprise a rotation stage configured to relatively rotate the SiC wafer configuration around the axis of the focused laser beam.
  • the rotation stage may be used so that the manufacturing configuration may generate intersections of two arrays of periodic rectangular grooves
  • the optical system may comprises at least a mirror to direct the laser beam from the pulsed laser to the SiC wafer configuration and at least a lens to focus the laser beam on the SiC wafer configuration. Therefore the laser beam may be directed and focused at any direction and distance with the appropriate set of mirrors and lenses.
  • the manufacturing configuration may further comprise a cell containing a liquid medium.
  • the irradiation may then be performed through the liquid medium. Therefore, different sizes of nanostructures may be formed based on the liquid used.
  • the pulsed laser is a femtosecond laser. This allows for texturing of SiC wafer configurations.
  • the pulse duration of the laser may affect the period of the nanogrooves.
  • the energy of the laser may affect the size of the nanogrooves or the nanostructures.
  • the pulsed laser may be configured to generate a laser beam having a fluence in a range sufficient for SiC ablation. This range may be between 0,2 and 2 J/cm 2 .
  • the translation module may be configured to displace and/or rotate the SiC wafer configuration holder while the irradiation module remains stationary. That means that the irradiation module may maintain its ablating characteristics for a certain SiC wafer configuration.
  • the translation module may be configured to displace and/or rotate the irradiation module while the SiC wafer configuration holder remains stationary. This may be useful for larger SiC wafer configurations or if a specific texturing pattern is required.
  • a manufacturing method of an LED device may comprise ablating a SiC wafer configuration according to examples disclosed herein and fabricating the LED device using the ablated SiC wafer configuration.
  • the manufacturing method of an LED device may comprise fabricating the LED device, the LED device comprising a SiC wafer configuration; and ablating the SiC wafer configuration of the LED device.
  • the manufacturing method may thus be applied both in pre-fabrication, during fabrication and in post-fabrication process of an LED device.
  • a SiC wafer configuration is disclosed.
  • the SiC wafer configuration may be ablated using a method of ablating according examples disclosed herein.
  • an LED device may comprise an SiC wafer configuration ablated using the method of ablating according to examples disclosed herein.
  • FIG. 1 A-D schematically shows an example of the manufacturing method.
  • Figure 2 shows the Scanning Electron Microscopy image of the resulting nanogroove texture on the ablated area of a single crystal SiC surface.
  • the texture was created by double exposure, with 90° rotation of the sample between exposures. Both exposures were performed in ethanol using the beam of a femtosecond Ti:sapphire laser emitting at a wavelength of 800 nm.
  • the scale bar in the inset denotes 1 00 nm.
  • the method is demonstrated to increase the transm ittance of SiC single crystal in the visible spectral range by a factor of 60.
  • the method consists in double exposure of light-exiting surface of SiC-based LED to femtosecond laser radiation in air or a liquid medium. It is schematical ly shown in FIG. 1 .
  • the focused beam '2' of linearly polarized femtosecond laser ' 1 7 with the help of focusing lens '3 ' and mirror '4' scans across the free exiting surface of a SiC LED
  • SUBSTITUTE SHEET '6' (FIG 1A).
  • the sample is displaced under the beam with the help of X-Y translation stages '5 '.
  • This process leads to the formation of a system of periodic rectangular grooves onto SiC surface. Such grooves are oriented perpendicular to the direction of polarization of the laser beam.
  • the laser beam is switched off, and the sample is rotated by 90° (FIG. 2B).
  • the fluence of the laser beam may be in the range 0.2 - 2 J/cm 2 depending on the pulse duration. In one implementation the fluence is in the range of 0.5 - 1 .5 J/cm 2 .
  • a laser having al 50 femtosecond (fsec) pulse was used with a wavelength of 800 nm and the resulting texture had a size distribution between l OOnm and 200nm. This may be attributed to the extent of homogeneity of the irradiation. General ly, a more homogenous irradiation may result in a lower size distribution.
  • the manufacturing method can be applied during the fabrication process of individual LED devices.
  • the manufacturing method can be applied during the fabrication process of individual LED components.
  • the sample can be stationary while the laser beam is scanned over its surface.
  • the laser exposure process described above can be applied to post- fabricated LEDs via irradiation of their light-exiting surfaces.
  • the manufacturing method can be used for patterning with nanogrooves the whole area of a SiC wafer, which is then used as a platform for the fabrication of LED devices.
  • the present invention provides a facile and efficient laser manufacturing method of mask-less patterning of the light-exiting surface of SiC-based LED devices for improved luminosity of such devices.
  • the light exiting surface comprises a regular array of nanogrooves and depressions. Since the period of nanogrooves is much smaller than the wavelength of LED emission, the obtained pattern acts like a transition layer with intermediate value of refractive index between air and SiC. As a result, the transmittance of the SiC surface shown in FIG. 2 is increased by a factor of 60 at the visible wavelengths.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The invention proposes a manufacturing method for enhancement of the luminosity of SiC-based LED devices using double exposure of the light-emitting surface of a LED device or LED component or SiC wafer to linearly polarized radiation of a femtosecond laser beam of a proper fluence. The first exposure results in the formation of a pattern of parallel periodic grooves onto SiC surface. Then the LED device, or LED component, or SiC wafer is rotated by 90 degrees and subsequently irradiated for a second time. The double exposure results in the formation of an array of regular depressions and nanogrooves onto SiC surface. These depressions act as an anti- reflecting coating due to smooth variation of the refractive index from its value in the crystal to air and lead to the increase of internal quantum efficiency of LED. The manufacturing method can be performed during the LED device fabrication or as a pre- or post- fabrication step. The manufacturing process can be performed in air or after immersion of a LED device, or LED component, or SiC wafer in liquid.

Description

ABLATING SiC WAFER CONFIGURATIONS AND MANUFACTURING LIGHT
EMITTING DIODE (LED) DEVICES
DESCRIPTION
FIELD OF THE INVENTION
[0001] The invention is related to the semiconductor processing field, and particularly relates to a manufacturing method of LED.
BACKGROUND OF THE INVENTION
[0002] Conventional LEDs suffer from low internal quantum efficiency. Large amount of energy is wasted inside LED devices, causing both energy waste and shorter lifetime. Light losses in LED devices are due to high refractive index of their crystalline semiconductor components. Therefore, improving the luminous efficiency is a matter of critical importance for LED devices.
[0003] Numerous ways of improving the luminous efficiency of LED have been applied to the LED device structure, including the surface roughening method and metal reflecting mirror structure. In a Chinese patent application (publication number CN1858918A), an LED with an omnidirectional reflector to improve the luminous efficiency is disclosed. However, in the method, a film structure including stacked high refractive index layers and low refractive index layers is required to be formed on a substrate. Therefore, the manufacture process of the method is complex.
[0004] A method of enhancement of LED luminosity is known, which is based on an inverse architecture of the device (EP 2 466 65 1 A l ). In this method the light produced by LED comes from SiC surface with numerous depressions with pyramids made by chemical etching. The providing a substrate and forming a plurality of pyramid structures on the substrate includes: providing a substrate; depositing a dielectric layer on the substrate and patterning the dielectric layer to form a grid-shaped hard mask; etching the substrate, with the hard mask as an etching mask, to form pyramid structures; and removing the hard mask. The etching the substrate with the hard mask as an etching mask to form pyramid structures includes: wet etching the substrate
SUBSTITUTE SHEET with tetramethylammonium hydroxide solution. This is a complicated multistep process that requires fabrication of a hard mask on SiC and its removal.
SUMMARY OF THE INVENTION [0005] The objective of this invention is to provide a simple and efficient method of mask-less patterning of SiC for improved luminosity of LED devices.
[0006] The present invention provides a maskless manufacturing method for improvement of luminosity of LED devices, based on laser ablation of a surface of a SiC wafer, to be used as a light exiting surface of an LED, by ultra-short laser pulses in air or liquid medium. This nonlinear process results in the formation of a regular array of grooves or depressions on the crystal surface of the SiC wafer. The result is grooves having a lateral size much smaller than the wavelength of visible light. Since the lateral size of grooves is much smaller than the wavelength of visible light, they act as anti-reflecting coating due to smooth variation of the refractive index from its value in the crystal to air.
[0007] In a first aspect a method of ablating a SiC wafer configuration is disclosed. The method comprises: providing the SiC wafer configuration on a holder; exposing a surface of the SiC wafer configuration to a focused laser radiation; relatively translating the SiC wafer configuration in a first horizontal direction during the exposure to generate a first array of periodic rectangular grooves on the SiC wafer configuration surface.
[0008] By translating the SiC wafer configuration during the irradiation exposure, it is possible to generate an array of periodic rectangular grooves in the SiC wafer configuration surface. The distance between and size of the grooves may depend on the speed of translation, the wavelength of the irradiation, the fluence of the irradiation and/or the duration of the laser pulse.
[0009] In some examples, the method of ablating may further comprise rotating the SiC wafer configuration by a preset angle around the axis of radiation; exposing the surface of the SiC wafer configuration to the focused laser radiation; relatively translating the rotated SiC wafer configuration in the first horizontal direction during the exposure to generate intersections of two arrays of periodic rectangular grooves on the SiC wafer configuration surface. By rotating the SiC wafer configuration and translating it again during the irradiation exposure, it is possible
SUBSTITUTE SHEET to generate a pattern of nanogrooves that may correspond to intersections of two arrays of periodic rectangular grooves. Seen from another perspective, the resulting ablated surface may comprise a plurality of pyramid or finger-like nanostructures separated by nanogrooves in two dimensions.
[0010] In some examples the SiC wafer configuration comprises at least a SiC wafer. For example the method may be applied on a SiC wafer or on a component (e.g. an LED component) that comprises a SiC wafer. In other examples the SiC wafer configuration may comprise a SiC wafer on a LED device. That is, the method may be implemented even in a post-fabrication stage of an LED device to improve the luminosity of the LED device.
[0011] In some examples, the SiC wafer configuration may be immersed in a cell containing a liquid medium. This allows for smaller nanostructures to be textured as the effective refractive index of the irradiated surface may change with the immersion of the surface in the l iquid. More specifically, the period L of the nanogrooves may be described by the equation L=Iambda/nerr where lamda is the laser wavelength and nefr is the effective refractive index of the irradiated surface. By immersing the SiC wafer configuration in the liquid, the nrfr may increase and therefore the period L decreases and, thus, smaller nanostructures may be formed.
[0012] In another aspect, a manufacturing configuration for ablating a SiC wafer configuration is disclosedL The manufacturing configuration comprises an irradiation module, a SiC wafer configuration holder and a translation module. The irradiation module has a pulsed laser and an optical system for focusing a laser beam from the pulsed laser. The SiC wafer configuration holder is configured to hold the SiC wafer configuration. The translation module has at least a horizontal translation stage configured to relatively displace the SiC wafer configuration holder in a first horizontal direction. The manufacturing configuration may be used to generate a fi rst array of periodic rectangular grooves on a SiC wafer configuration surface.
[0013] In some examples, the translation module may further comprise a rotation stage configured to relatively rotate the SiC wafer configuration around the axis of the focused laser beam. The rotation stage may be used so that the manufacturing configuration may generate intersections of two arrays of periodic rectangular grooves
SUBSTITUTE SHEET [0014] In some examples, the optical system may comprises at least a mirror to direct the laser beam from the pulsed laser to the SiC wafer configuration and at least a lens to focus the laser beam on the SiC wafer configuration. Therefore the laser beam may be directed and focused at any direction and distance with the appropriate set of mirrors and lenses.
[0015] In some examples the manufacturing configuration may further comprise a cell containing a liquid medium. The irradiation may then be performed through the liquid medium. Therefore, different sizes of nanostructures may be formed based on the liquid used.
[0016] In some examples the pulsed laser is a femtosecond laser. This allows for texturing of SiC wafer configurations. The pulse duration of the laser may affect the period of the nanogrooves. The energy of the laser may affect the size of the nanogrooves or the nanostructures.
[0017] In some examples, the pulsed laser may be configured to generate a laser beam having a fluence in a range sufficient for SiC ablation. This range may be between 0,2 and 2 J/cm2.
[0018] In some examples, the translation module may be configured to displace and/or rotate the SiC wafer configuration holder while the irradiation module remains stationary. That means that the irradiation module may maintain its ablating characteristics for a certain SiC wafer configuration.
[0019] In other examples, the translation module may be configured to displace and/or rotate the irradiation module while the SiC wafer configuration holder remains stationary. This may be useful for larger SiC wafer configurations or if a specific texturing pattern is required.
[0020] In yet another aspect, a manufacturing method of an LED device is disclosed. The method may comprise ablating a SiC wafer configuration according to examples disclosed herein and fabricating the LED device using the ablated SiC wafer configuration.
[0021] Alternatively, the manufacturing method of an LED device may comprise fabricating the LED device, the LED device comprising a SiC wafer configuration; and ablating the SiC wafer configuration of the LED device.
SUBSTITUTE SHEET [0022] The manufacturing method may thus be applied both in pre-fabrication, during fabrication and in post-fabrication process of an LED device.
[0023] In yet another aspect, a SiC wafer configuration is disclosed. The SiC wafer configuration may be ablated using a method of ablating according examples disclosed herein.
[0024] In yet another aspect, an LED device is disclosed. The LED device may comprise an SiC wafer configuration ablated using the method of ablating according to examples disclosed herein.
BRIEF DESCRIPTION OF THE FIGURES
[0025] Figures 1 , A-D schematically shows an example of the manufacturing method.
[0026] Figure 2 shows the Scanning Electron Microscopy image of the resulting nanogroove texture on the ablated area of a single crystal SiC surface. The texture was created by double exposure, with 90° rotation of the sample between exposures. Both exposures were performed in ethanol using the beam of a femtosecond Ti:sapphire laser emitting at a wavelength of 800 nm. The scale bar in the inset denotes 1 00 nm.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0027] Hereunder, the present invention will be described in detail with reference to embodiments, in conjunction with the accompanying drawings.
[0028] Embodiments to which the present invention is applied are described in detail below. However, the invention is not restricted to the embodiments described below.
[0029] In an example the method is demonstrated to increase the transm ittance of SiC single crystal in the visible spectral range by a factor of 60.
[0030] The method consists in double exposure of light-exiting surface of SiC-based LED to femtosecond laser radiation in air or a liquid medium. It is schematical ly shown in FIG. 1 .
[0031] In the first step the focused beam '2' of linearly polarized femtosecond laser ' 1 7 with the help of focusing lens '3 ' and mirror '4' scans across the free exiting surface of a SiC LED
SUBSTITUTE SHEET '6' (FIG 1A). The sample is displaced under the beam with the help of X-Y translation stages '5 '. This process leads to the formation of a system of periodic rectangular grooves onto SiC surface. Such grooves are oriented perpendicular to the direction of polarization of the laser beam.
[0032] In the second step the laser beam is switched off, and the sample is rotated by 90° (FIG. 2B).
[0033] At the third step the same laser beam scans the surface of the sample as in step 1 . This process gives rise to the intersection of two systems of periodic rectangular grooves (FIG. I C).
[0034] All three steps described above can be performed, while the sample is immersed in a liquid cell '7' (FIG. I D) and the irradiation is performed through the liquid.
[0035] The fluence of the laser beam may be in the range 0.2 - 2 J/cm2 depending on the pulse duration. In one implementation the fluence is in the range of 0.5 - 1 .5 J/cm2.
[0036] In the example of Fig. 2, a laser having al 50 femtosecond (fsec) pulse was used with a wavelength of 800 nm and the resulting texture had a size distribution between l OOnm and 200nm. This may be attributed to the extent of homogeneity of the irradiation. General ly, a more homogenous irradiation may result in a lower size distribution.
[0037] The manufacturing method can be applied during the fabrication process of individual LED devices.
[0038] The manufacturing method can be applied during the fabrication process of individual LED components.
[0039] Alternatively, the sample can be stationary while the laser beam is scanned over its surface.
[0040] Alternatively the laser exposure process described above can be applied to post- fabricated LEDs via irradiation of their light-exiting surfaces.
SUBSTITUTE SHEET [0041] Alternatively, the manufacturing method can be used for patterning with nanogrooves the whole area of a SiC wafer, which is then used as a platform for the fabrication of LED devices. [0042] In conclusion, the present invention provides a facile and efficient laser manufacturing method of mask-less patterning of the light-exiting surface of SiC-based LED devices for improved luminosity of such devices. The light exiting surface comprises a regular array of nanogrooves and depressions. Since the period of nanogrooves is much smaller than the wavelength of LED emission, the obtained pattern acts like a transition layer with intermediate value of refractive index between air and SiC. As a result, the transmittance of the SiC surface shown in FIG. 2 is increased by a factor of 60 at the visible wavelengths.
[0043] Although the present invention has been illustrated and described with reference to the preferred embodiments of the present invention, those ordinary skilled in the art shall appreciate that various modifications in form and detail are also possible.
SUBSTITUTE SHEET

Claims

1. A method of ablating a SiC wafer configuration comprising: providing the SiC wafer configuration on a holder; exposing a surface of the SiC wafer configuration to a focused laser radiation; relatively translating the SiC wafer configuration in a first horizontal direction during the exposure to generate a first array of periodic rectangular grooves on the SiC wafer configuration surface.
2. The method of ablating according to claim I, further comprising: rotating the SiC wafer configuration by a preset angle around the axis of radiation; exposing the surface of the SiC wafer configuration to the focused laser radiation; and relatively translating the rotated SiC wafer configuration in the first horizontal direction during the exposure to generate intersections of two arrays of periodic rectangular grooves on the SiC wafer configuration surface.
3. A method of ablating according to any of claims 1 or 2, wherein the SiC wafer configuration comprises at least a SiC wafer.
4. The method of ablating according to any of claims 1 to 3, wherein the SiC wafer configuration comprises a SiC wafer on a LED device.
5. The method of ablating according to any of claims 1 to 4, wherein the SiC wafer configuration is provided in a cell containing a liquid medium.
6. , A manufacturing configuration for ablating a SiC wafer configuration, comprising: an irradiation module having: a pulsed laser; an optical system for focusing a laser beam from the pulsed laser; a SiC wafer configuration holder configured to hold the SiC wafer configuration;
SUBSTITUTE SHEET a translation module having at least a horizontal translation stage configured to relatively displace the SiC wafer configuration holder in a first horizontal direction.
7. The manufacturing configuration according to claim 6, wherein the translation module further comprises a rotation stage configured to relatively rotate the SiC wafer configuration around the axis of the focused laser beam.
8. The manufacturing configuration according to claim 6 or 7, wherein the optical system comprises at least a mirror to direct the laser beam from the pulsed laser to the SiC wafer configuration and at least a lens to focus the laser beam on the SiC wafer configuration.
9. The manufacturing configuration according to any of claims 6 to 8, further comprising a cell containing a liquid medium, wherein the irradiation is performed through the liquid medium.
10. The manufacturing configuration according to any of claims 6 to 9, wherein the pulsed laser is a femtosecond laser
1 1. The manufacturing configuration according to any of claims 6 to 10, wherein the pulsed laser is configured to generate a laser beam having a fluence in a range sufficient for SiC ablation.
1 9 Τ j.Ί-ie t -r~t 1 1 w■· here - i n Hne ~ t *r· a■—n Q l f—i t * i n
Figure imgf000011_0001
module is configured to displace and/or rotate the SiC wafer configuration holder while the irradiation module remains stationary.
13. The manufacturing configuration according to any of claims 6 to 12, wherein the translation module is configured to displace and/or rotate the irradiation module while the SiC wafer configuration holder remains stationary.
14. A manufacturing method of an LED device comprising: ablating a SiC wafer configuration according to any of claims 1 to 5 ; and fabricating the LED device using the ablated SiC wafer configuration.
15. A manufacturing method of an LED device comprising: fabricating the LED device, the LED device comprising a SiC wafer configuration; and ablating the SiC wafer configuration of the LED device according to any of claims 1 to 5.
SUBSTITUTE SHEET
16. A SiC wafer configuration ablated using a method of ablating according to any of claims 1 to 5.
17. An LED device comprising an SiC wafer configuration ablated using the method of ablating according to any of claims 1 to 5.
SUBSTITUTE SHEET
PCT/GR2015/000040 2014-07-31 2015-07-31 Ablating sic wafer configurations and manufacturing light emitting diode (led) devices WO2016016670A1 (en)

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