JP2002359231A5 - - Google Patents
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- Publication number
- JP2002359231A5 JP2002359231A5 JP2001163775A JP2001163775A JP2002359231A5 JP 2002359231 A5 JP2002359231 A5 JP 2002359231A5 JP 2001163775 A JP2001163775 A JP 2001163775A JP 2001163775 A JP2001163775 A JP 2001163775A JP 2002359231 A5 JP2002359231 A5 JP 2002359231A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- forming
- insulating film
- silicon film
- tungsten silicide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 29
- 229910052710 silicon Inorganic materials 0.000 claims 29
- 239000010703 silicon Substances 0.000 claims 29
- 239000004065 semiconductor Substances 0.000 claims 22
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims 19
- 229910021342 tungsten silicide Inorganic materials 0.000 claims 19
- 239000007789 gas Substances 0.000 claims 14
- 230000000873 masking effect Effects 0.000 claims 14
- 239000000758 substrate Substances 0.000 claims 12
- 238000005530 etching Methods 0.000 claims 10
- 238000004519 manufacturing process Methods 0.000 claims 10
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 7
- 229910052731 fluorine Inorganic materials 0.000 claims 7
- 239000011737 fluorine Substances 0.000 claims 7
- 238000000059 patterning Methods 0.000 claims 7
- 239000002253 acid Substances 0.000 claims 5
- 150000003839 salts Chemical class 0.000 claims 5
- 238000000034 method Methods 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 229910018503 SF6 Inorganic materials 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 238000001312 dry etching Methods 0.000 claims 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims 1
- 229960000909 sulfur hexafluoride Drugs 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001163775A JP2002359231A (ja) | 2001-05-31 | 2001-05-31 | 半導体集積回路装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001163775A JP2002359231A (ja) | 2001-05-31 | 2001-05-31 | 半導体集積回路装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002359231A JP2002359231A (ja) | 2002-12-13 |
| JP2002359231A5 true JP2002359231A5 (enExample) | 2005-07-28 |
Family
ID=19006681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001163775A Pending JP2002359231A (ja) | 2001-05-31 | 2001-05-31 | 半導体集積回路装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002359231A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100464664B1 (ko) * | 2003-03-12 | 2005-01-03 | 주식회사 하이닉스반도체 | 고전압 소자의 웰 구조 |
| KR100497474B1 (ko) * | 2003-06-20 | 2005-07-01 | 주식회사 하이닉스반도체 | 반도체소자의 게이트전극 형성방법 |
| KR100616193B1 (ko) * | 2004-09-15 | 2006-08-25 | 에스티마이크로일렉트로닉스 엔.브이. | 비휘발성 메모리 소자의 게이트 전극 형성방법 |
| JP5548997B2 (ja) * | 2012-03-23 | 2014-07-16 | 独立行政法人産業技術総合研究所 | 微細周期構造を有する炭化ケイ素モールド及びその製造方法 |
| JP2014207361A (ja) * | 2013-04-15 | 2014-10-30 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
| WO2022013938A1 (ja) * | 2020-07-14 | 2022-01-20 | 株式会社日立ハイテク | プラズマ処理方法 |
-
2001
- 2001-05-31 JP JP2001163775A patent/JP2002359231A/ja active Pending
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