JP2002359231A - 半導体集積回路装置の製造方法 - Google Patents

半導体集積回路装置の製造方法

Info

Publication number
JP2002359231A
JP2002359231A JP2001163775A JP2001163775A JP2002359231A JP 2002359231 A JP2002359231 A JP 2002359231A JP 2001163775 A JP2001163775 A JP 2001163775A JP 2001163775 A JP2001163775 A JP 2001163775A JP 2002359231 A JP2002359231 A JP 2002359231A
Authority
JP
Japan
Prior art keywords
film
forming
integrated circuit
circuit device
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001163775A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002359231A5 (enExample
Inventor
Kazuto Mogami
和人 最上
Yasushi Kanbara
康司 神原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Renesas Semiconductor Package and Test Solutions Co Ltd
Original Assignee
Hitachi Hokkai Semiconductor Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Hokkai Semiconductor Ltd, Hitachi Ltd filed Critical Hitachi Hokkai Semiconductor Ltd
Priority to JP2001163775A priority Critical patent/JP2002359231A/ja
Publication of JP2002359231A publication Critical patent/JP2002359231A/ja
Publication of JP2002359231A5 publication Critical patent/JP2002359231A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2001163775A 2001-05-31 2001-05-31 半導体集積回路装置の製造方法 Pending JP2002359231A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001163775A JP2002359231A (ja) 2001-05-31 2001-05-31 半導体集積回路装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001163775A JP2002359231A (ja) 2001-05-31 2001-05-31 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JP2002359231A true JP2002359231A (ja) 2002-12-13
JP2002359231A5 JP2002359231A5 (enExample) 2005-07-28

Family

ID=19006681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001163775A Pending JP2002359231A (ja) 2001-05-31 2001-05-31 半導体集積回路装置の製造方法

Country Status (1)

Country Link
JP (1) JP2002359231A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004282022A (ja) * 2003-03-12 2004-10-07 Hynix Semiconductor Inc 高電圧素子のウェル構造
JP2005012159A (ja) * 2003-06-20 2005-01-13 Hynix Semiconductor Inc 半導体素子のゲート電極形成方法
JP2006086486A (ja) * 2004-09-15 2006-03-30 Hynix Semiconductor Inc 不揮発性メモリ素子のゲート電極形成方法
JP2012162450A (ja) * 2012-03-23 2012-08-30 National Institute Of Advanced Industrial Science & Technology 微細周期構造を有する炭化ケイ素モールド及びその製造方法
JP2014207361A (ja) * 2013-04-15 2014-10-30 富士通セミコンダクター株式会社 半導体装置及びその製造方法
WO2022013938A1 (ja) * 2020-07-14 2022-01-20 株式会社日立ハイテク プラズマ処理方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004282022A (ja) * 2003-03-12 2004-10-07 Hynix Semiconductor Inc 高電圧素子のウェル構造
JP2005012159A (ja) * 2003-06-20 2005-01-13 Hynix Semiconductor Inc 半導体素子のゲート電極形成方法
JP2006086486A (ja) * 2004-09-15 2006-03-30 Hynix Semiconductor Inc 不揮発性メモリ素子のゲート電極形成方法
JP2012162450A (ja) * 2012-03-23 2012-08-30 National Institute Of Advanced Industrial Science & Technology 微細周期構造を有する炭化ケイ素モールド及びその製造方法
JP2014207361A (ja) * 2013-04-15 2014-10-30 富士通セミコンダクター株式会社 半導体装置及びその製造方法
WO2022013938A1 (ja) * 2020-07-14 2022-01-20 株式会社日立ハイテク プラズマ処理方法

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