JP2002351404A - 表示装置の駆動方法 - Google Patents
表示装置の駆動方法Info
- Publication number
- JP2002351404A JP2002351404A JP2002081081A JP2002081081A JP2002351404A JP 2002351404 A JP2002351404 A JP 2002351404A JP 2002081081 A JP2002081081 A JP 2002081081A JP 2002081081 A JP2002081081 A JP 2002081081A JP 2002351404 A JP2002351404 A JP 2002351404A
- Authority
- JP
- Japan
- Prior art keywords
- signal
- light emitting
- display device
- input
- pixel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 178
- 239000010409 thin film Substances 0.000 claims description 13
- 230000008859 change Effects 0.000 abstract description 9
- 230000007613 environmental effect Effects 0.000 abstract description 7
- 239000010408 film Substances 0.000 description 125
- 239000010410 layer Substances 0.000 description 95
- 238000005070 sampling Methods 0.000 description 90
- 102100038204 Large neutral amino acids transporter small subunit 1 Human genes 0.000 description 62
- 108091006232 SLC7A5 Proteins 0.000 description 62
- 102100038235 Large neutral amino acids transporter small subunit 2 Human genes 0.000 description 42
- 108091006238 SLC7A8 Proteins 0.000 description 42
- 239000012535 impurity Substances 0.000 description 29
- 238000010586 diagram Methods 0.000 description 26
- 150000002894 organic compounds Chemical class 0.000 description 23
- 239000003990 capacitor Substances 0.000 description 22
- 238000005530 etching Methods 0.000 description 21
- 239000000463 material Substances 0.000 description 20
- 238000003860 storage Methods 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 19
- 239000000758 substrate Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 238000002347 injection Methods 0.000 description 12
- 239000007924 injection Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 239000000126 substance Substances 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 239000011229 interlayer Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000000460 chlorine Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 239000003566 sealing material Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 241001270131 Agaricus moelleri Species 0.000 description 5
- 102100024032 Linker for activation of T-cells family member 1 Human genes 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 101100182248 Caenorhabditis elegans lat-2 gene Proteins 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 4
- 239000000872 buffer Substances 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 4
- 230000005525 hole transport Effects 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920002620 polyvinyl fluoride Polymers 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 2
- 239000005041 Mylar™ Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
- 239000011231 conductive filler Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 101100489584 Solanum lycopersicum TFT1 gene Proteins 0.000 description 1
- 229910004529 TaF 5 Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 210000003128 head Anatomy 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002081081A JP2002351404A (ja) | 2001-03-22 | 2002-03-22 | 表示装置の駆動方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-83286 | 2001-03-22 | ||
| JP2001083286 | 2001-03-22 | ||
| JP2002081081A JP2002351404A (ja) | 2001-03-22 | 2002-03-22 | 表示装置の駆動方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002351404A true JP2002351404A (ja) | 2002-12-06 |
| JP2002351404A5 JP2002351404A5 (enExample) | 2005-09-08 |
Family
ID=26611832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002081081A Withdrawn JP2002351404A (ja) | 2001-03-22 | 2002-03-22 | 表示装置の駆動方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002351404A (enExample) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004066248A1 (ja) * | 2003-01-17 | 2004-08-05 | Semiconductor Energy Laboratory Co., Ltd. | 電流源回路、信号線駆動回路及びその駆動方法並びに発光装置 |
| JPWO2004054114A1 (ja) * | 2002-12-10 | 2006-04-13 | 株式会社半導体エネルギー研究所 | 半導体装置、デジタル・アナログ変換回路及びそれらを用いた表示装置 |
| CN100353391C (zh) * | 2003-04-01 | 2007-12-05 | 友达光电股份有限公司 | 用于一电流驱动的显示元件的数据驱动电路 |
| US7728653B2 (en) | 2002-03-06 | 2010-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Display and method of driving the same |
| US7864074B2 (en) | 2003-03-07 | 2011-01-04 | Au Optronics Corp. | Data driver used in a current-driving display device |
| JP2018194862A (ja) * | 2013-01-24 | 2018-12-06 | フィニサー コーポレイション | リキッド・クリスタル・オン・シリコン・チップにおけるローカル・バッファ |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10187093A (ja) * | 1996-12-27 | 1998-07-14 | Mitsubishi Electric Corp | マトリクス表示装置の駆動回路およびマトリクス表示装置の駆動方法 |
| WO1999065012A2 (en) * | 1998-06-12 | 1999-12-16 | Koninklijke Philips Electronics N.V. | Active matrix electroluminescent display devices |
| JP2000206937A (ja) * | 1999-01-19 | 2000-07-28 | Fuji Electric Co Ltd | マトリックス表示パネルの駆動方法 |
| WO2001006484A1 (en) * | 1999-07-14 | 2001-01-25 | Sony Corporation | Current drive circuit and display comprising the same, pixel circuit, and drive method |
| JP2001067018A (ja) * | 1999-06-21 | 2001-03-16 | Semiconductor Energy Lab Co Ltd | El表示装置およびその駆動方法並びに電子装置 |
| WO2001091095A1 (en) * | 2000-05-22 | 2001-11-29 | Koninklijke Philips Electronics N.V. | Active matrix electroluminescent display device |
-
2002
- 2002-03-22 JP JP2002081081A patent/JP2002351404A/ja not_active Withdrawn
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10187093A (ja) * | 1996-12-27 | 1998-07-14 | Mitsubishi Electric Corp | マトリクス表示装置の駆動回路およびマトリクス表示装置の駆動方法 |
| WO1999065012A2 (en) * | 1998-06-12 | 1999-12-16 | Koninklijke Philips Electronics N.V. | Active matrix electroluminescent display devices |
| JP2000206937A (ja) * | 1999-01-19 | 2000-07-28 | Fuji Electric Co Ltd | マトリックス表示パネルの駆動方法 |
| JP2001067018A (ja) * | 1999-06-21 | 2001-03-16 | Semiconductor Energy Lab Co Ltd | El表示装置およびその駆動方法並びに電子装置 |
| WO2001006484A1 (en) * | 1999-07-14 | 2001-01-25 | Sony Corporation | Current drive circuit and display comprising the same, pixel circuit, and drive method |
| WO2001091095A1 (en) * | 2000-05-22 | 2001-11-29 | Koninklijke Philips Electronics N.V. | Active matrix electroluminescent display device |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7728653B2 (en) | 2002-03-06 | 2010-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Display and method of driving the same |
| US8373694B2 (en) | 2002-03-06 | 2013-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor integrated circuit and method of driving the same |
| US8004513B2 (en) | 2002-03-06 | 2011-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor integrated circuit and method of driving the same |
| JPWO2004054114A1 (ja) * | 2002-12-10 | 2006-04-13 | 株式会社半導体エネルギー研究所 | 半導体装置、デジタル・アナログ変換回路及びそれらを用いた表示装置 |
| JP2008242489A (ja) * | 2003-01-17 | 2008-10-09 | Semiconductor Energy Lab Co Ltd | 電流源回路 |
| CN100437701C (zh) * | 2003-01-17 | 2008-11-26 | 株式会社半导体能源研究所 | 电流源电路、信号线驱动电路及其驱动方法以及发光装置 |
| WO2004066248A1 (ja) * | 2003-01-17 | 2004-08-05 | Semiconductor Energy Laboratory Co., Ltd. | 電流源回路、信号線駆動回路及びその駆動方法並びに発光装置 |
| KR101065659B1 (ko) * | 2003-01-17 | 2011-09-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전류원 회로, 신호선 구동회로 및 그 구동방법과, 발광장치 |
| US8659529B2 (en) | 2003-01-17 | 2014-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Current source circuit, a signal line driver circuit and a driving method thereof and a light emitting device |
| US9626913B2 (en) | 2003-01-17 | 2017-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Current source circuit, a signal line driver circuit and a driving method thereof and a light emitting device |
| US7864074B2 (en) | 2003-03-07 | 2011-01-04 | Au Optronics Corp. | Data driver used in a current-driving display device |
| CN100353391C (zh) * | 2003-04-01 | 2007-12-05 | 友达光电股份有限公司 | 用于一电流驱动的显示元件的数据驱动电路 |
| JP2018194862A (ja) * | 2013-01-24 | 2018-12-06 | フィニサー コーポレイション | リキッド・クリスタル・オン・シリコン・チップにおけるローカル・バッファ |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7283109B2 (en) | Method of driving a display device | |
| JP6764502B2 (ja) | 発光装置 | |
| JP4896315B2 (ja) | 発光装置および電子機器 | |
| JP4011320B2 (ja) | 表示装置及びそれを用いた電子機器 | |
| JP4155389B2 (ja) | 発光装置、その駆動方法及び電子機器 | |
| KR100806234B1 (ko) | 표시장치 | |
| US6661180B2 (en) | Light emitting device, driving method for the same and electronic apparatus | |
| JP2002032057A (ja) | 発光装置及びその駆動方法 | |
| JP5147150B2 (ja) | 発光装置及び電子機器 | |
| JP2002351404A (ja) | 表示装置の駆動方法 | |
| JP2002140034A (ja) | 携帯情報装置及びその駆動方法 | |
| JP2003228333A (ja) | 駆動回路及びその駆動方法 | |
| JP4954400B2 (ja) | 半導体装置 | |
| JP5639735B2 (ja) | 半導体装置、表示装置、電子機器及び表示モジュール | |
| JP6419885B2 (ja) | 半導体装置、表示装置、表示モジュール及び電子機器 | |
| JP2019174838A (ja) | 表示装置 | |
| JP2002221937A (ja) | 発光装置及び電子機器 | |
| JP6212161B2 (ja) | 半導体装置、表示装置、表示モジュール及び電子機器 | |
| JP6838126B2 (ja) | 半導体装置 | |
| JP5712122B2 (ja) | 半導体装置、表示装置及び電子機器 | |
| JP5639988B2 (ja) | 発光装置 | |
| JP6629907B2 (ja) | 表示装置及び電子機器 | |
| JP4430090B2 (ja) | 表示装置 | |
| JP5796103B2 (ja) | 表示装置、表示モジュール及び電子機器 | |
| JP6023833B2 (ja) | 半導体装置、表示装置、表示モジュール及び電子機器 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050317 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050317 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080307 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080408 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20080506 |