JP2002305296A5 - - Google Patents

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Publication number
JP2002305296A5
JP2002305296A5 JP2001109559A JP2001109559A JP2002305296A5 JP 2002305296 A5 JP2002305296 A5 JP 2002305296A5 JP 2001109559 A JP2001109559 A JP 2001109559A JP 2001109559 A JP2001109559 A JP 2001109559A JP 2002305296 A5 JP2002305296 A5 JP 2002305296A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2001109559A
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JP4703883B2 (ja
JP2002305296A (ja
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Priority to JP2001109559A priority Critical patent/JP4703883B2/ja
Priority claimed from JP2001109559A external-priority patent/JP4703883B2/ja
Priority to US10/117,345 priority patent/US6692984B2/en
Publication of JP2002305296A publication Critical patent/JP2002305296A/ja
Priority to US10/775,128 priority patent/US6825492B2/en
Priority to US10/994,390 priority patent/US7351605B2/en
Publication of JP2002305296A5 publication Critical patent/JP2002305296A5/ja
Application granted granted Critical
Publication of JP4703883B2 publication Critical patent/JP4703883B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001109559A 2001-04-09 2001-04-09 半導体装置の作製方法 Expired - Fee Related JP4703883B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001109559A JP4703883B2 (ja) 2001-04-09 2001-04-09 半導体装置の作製方法
US10/117,345 US6692984B2 (en) 2001-04-09 2002-04-08 Method of manufacturing a semiconductor device
US10/775,128 US6825492B2 (en) 2001-04-09 2004-02-11 Method of manufacturing a semiconductor device
US10/994,390 US7351605B2 (en) 2001-04-09 2004-11-23 Method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001109559A JP4703883B2 (ja) 2001-04-09 2001-04-09 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002305296A JP2002305296A (ja) 2002-10-18
JP2002305296A5 true JP2002305296A5 (ja) 2008-05-22
JP4703883B2 JP4703883B2 (ja) 2011-06-15

Family

ID=18961479

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001109559A Expired - Fee Related JP4703883B2 (ja) 2001-04-09 2001-04-09 半導体装置の作製方法

Country Status (2)

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US (1) US6692984B2 (ja)
JP (1) JP4703883B2 (ja)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6747638B2 (en) 2000-01-31 2004-06-08 Semiconductor Energy Laboratory Co., Ltd. Adhesion type area sensor and display device having adhesion type area sensor
US7030551B2 (en) 2000-08-10 2006-04-18 Semiconductor Energy Laboratory Co., Ltd. Area sensor and display apparatus provided with an area sensor
US7351605B2 (en) * 2001-04-09 2008-04-01 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP4454921B2 (ja) * 2002-09-27 2010-04-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP2256807A3 (en) * 2003-01-08 2017-05-17 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and its fabricating method
US7253391B2 (en) * 2003-09-19 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Optical sensor device and electronic apparatus
US7495272B2 (en) * 2003-10-06 2009-02-24 Semiconductor Energy Labortaory Co., Ltd. Semiconductor device having photo sensor element and amplifier circuit
JP3729826B2 (ja) 2004-01-09 2005-12-21 松下電器産業株式会社 固体撮像装置の製造方法
KR101098777B1 (ko) 2004-03-04 2011-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Ｉｄ 칩 및 ｉｃ 카드
KR100617065B1 (ko) * 2004-07-15 2006-08-30 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 제조방법
JP4817636B2 (ja) 2004-10-04 2011-11-16 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
CN102682332B (zh) * 2005-01-31 2015-06-17 株式会社半导体能源研究所 半导体器件及其制造方法
JP4817853B2 (ja) * 2005-01-31 2011-11-16 株式会社半導体エネルギー研究所 半導体装置の作成方法
JP2007305960A (ja) * 2006-04-14 2007-11-22 Sharp Corp 半導体装置およびその製造方法
KR101441346B1 (ko) * 2007-04-27 2014-09-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8736587B2 (en) * 2008-07-10 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4688229B2 (ja) * 2008-10-03 2011-05-25 東芝モバイルディスプレイ株式会社 表示装置
JP5202395B2 (ja) * 2009-03-09 2013-06-05 株式会社半導体エネルギー研究所 タッチパネル、電子機器
TWI496042B (zh) * 2009-07-02 2015-08-11 Semiconductor Energy Lab 觸控面板及其驅動方法
KR101074795B1 (ko) * 2009-07-03 2011-10-19 삼성모바일디스플레이주식회사 광 센싱 회로, 이를 포함하는 터치 패널, 및 광 센싱 회로의 구동 방법
US8624875B2 (en) * 2009-08-24 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Method for driving touch panel
JP5740132B2 (ja) 2009-10-26 2015-06-24 株式会社半導体エネルギー研究所 表示装置及び半導体装置
US9473714B2 (en) 2010-07-01 2016-10-18 Semiconductor Energy Laboratory Co., Ltd. Solid-state imaging device and semiconductor display device
KR101781533B1 (ko) * 2010-12-23 2017-09-27 삼성디스플레이 주식회사 영상 촬영 장치 및 이의 영상 촬영 방법
US9781783B2 (en) 2011-04-15 2017-10-03 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, display device, light-emitting system, and display system
CN104102382B (zh) * 2014-06-05 2017-02-15 京东方科技集团股份有限公司 触控显示驱动电路和触控显示装置
JP6598436B2 (ja) * 2014-08-08 2019-10-30 キヤノン株式会社 光電変換装置、撮像システム、及び光電変換装置の製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2838318B2 (ja) 1990-11-30 1998-12-16 株式会社半導体エネルギー研究所 感光装置及びその作製方法
US5627364A (en) 1994-10-11 1997-05-06 Tdk Corporation Linear array image sensor with thin-film light emission element light source
TW290678B (ja) 1994-12-22 1996-11-11 Handotai Energy Kenkyusho Kk
JP4027465B2 (ja) 1997-07-01 2007-12-26 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置およびその製造方法
JP4127416B2 (ja) 1997-07-16 2008-07-30 株式会社半導体エネルギー研究所 光センサ、光センサの作製方法、リニアイメージセンサ及びエリアセンサ
JPH1144912A (ja) 1997-07-24 1999-02-16 Semiconductor Energy Lab Co Ltd 撮像機能を備えた投影型表示装置及び通信システム
JPH1197705A (ja) 1997-09-23 1999-04-09 Semiconductor Energy Lab Co Ltd 半導体集積回路
JP4294745B2 (ja) 1997-09-26 2009-07-15 株式会社半導体エネルギー研究所 光電変換装置の作製方法
JP4044187B2 (ja) 1997-10-20 2008-02-06 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置およびその作製方法
US6287888B1 (en) 1997-12-26 2001-09-11 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and process for producing photoelectric conversion device
JPH11326954A (ja) 1998-05-15 1999-11-26 Semiconductor Energy Lab Co Ltd 半導体装置
US6747638B2 (en) 2000-01-31 2004-06-08 Semiconductor Energy Laboratory Co., Ltd. Adhesion type area sensor and display device having adhesion type area sensor
JP2001298663A (ja) 2000-04-12 2001-10-26 Semiconductor Energy Lab Co Ltd 半導体装置およびその駆動方法
US7751600B2 (en) 2000-04-18 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. System and method for identifying an individual
JP4197217B2 (ja) 2000-05-08 2008-12-17 株式会社半導体エネルギー研究所 装置
JP4703815B2 (ja) 2000-05-26 2011-06-15 株式会社半導体エネルギー研究所 Ｍｏｓ型センサの駆動方法、及び撮像方法
US6995753B2 (en) 2000-06-06 2006-02-07 Semiconductor Energy Laboratory Co., Ltd. Display device and method of manufacturing the same
JP2002072963A (ja) 2000-06-12 2002-03-12 Semiconductor Energy Lab Co Ltd 発光モジュールおよびその駆動方法並びに光センサ
US7030551B2 (en) 2000-08-10 2006-04-18 Semiconductor Energy Laboratory Co., Ltd. Area sensor and display apparatus provided with an area sensor

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