JP2002275684A5 - - Google Patents
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- Publication number
- JP2002275684A5 JP2002275684A5 JP2001325747A JP2001325747A JP2002275684A5 JP 2002275684 A5 JP2002275684 A5 JP 2002275684A5 JP 2001325747 A JP2001325747 A JP 2001325747A JP 2001325747 A JP2001325747 A JP 2001325747A JP 2002275684 A5 JP2002275684 A5 JP 2002275684A5
- Authority
- JP
- Japan
- Prior art keywords
- copper
- metal
- seed layer
- integrated circuit
- amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910052802 copper Inorganic materials 0.000 claims description 36
- 239000010949 copper Substances 0.000 claims description 36
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 32
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 239000000084 colloidal system Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 10
- 150000002941 palladium compounds Chemical class 0.000 claims description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- 238000009713 electroplating Methods 0.000 claims description 7
- 239000003792 electrolyte Substances 0.000 claims description 6
- 229910021645 metal ion Inorganic materials 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 2
- -1 copper fluoroborate Chemical compound 0.000 description 4
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 3
- OCUCCJIRFHNWBP-IYEMJOQQSA-L Copper gluconate Chemical compound [Cu+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O OCUCCJIRFHNWBP-IYEMJOQQSA-L 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229940108925 copper gluconate Drugs 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 239000000080 wetting agent Substances 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- HFDWIMBEIXDNQS-UHFFFAOYSA-L copper;diformate Chemical compound [Cu+2].[O-]C=O.[O-]C=O HFDWIMBEIXDNQS-UHFFFAOYSA-L 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US24308500P | 2000-10-25 | 2000-10-25 | |
| US60/243085 | 2000-10-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002275684A JP2002275684A (ja) | 2002-09-25 |
| JP2002275684A5 true JP2002275684A5 (https=) | 2005-06-30 |
Family
ID=22917307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001325747A Withdrawn JP2002275684A (ja) | 2000-10-25 | 2001-10-24 | シード層 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2002275684A (https=) |
| KR (1) | KR20020032347A (https=) |
| TW (1) | TW516120B (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101147367B1 (ko) * | 2005-06-02 | 2012-05-22 | 매그나칩 반도체 유한회사 | 반도체 소자의 제조방법 |
| JP5653743B2 (ja) * | 2009-12-25 | 2015-01-14 | 株式会社荏原製作所 | 金属膜形成方法および装置 |
-
2001
- 2001-10-24 KR KR1020010065623A patent/KR20020032347A/ko not_active Ceased
- 2001-10-24 JP JP2001325747A patent/JP2002275684A/ja not_active Withdrawn
- 2001-10-25 TW TW090126460A patent/TW516120B/zh active
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