JP5653743B2 - 金属膜形成方法および装置 - Google Patents
金属膜形成方法および装置 Download PDFInfo
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- JP5653743B2 JP5653743B2 JP2010284120A JP2010284120A JP5653743B2 JP 5653743 B2 JP5653743 B2 JP 5653743B2 JP 2010284120 A JP2010284120 A JP 2010284120A JP 2010284120 A JP2010284120 A JP 2010284120A JP 5653743 B2 JP5653743 B2 JP 5653743B2
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- Prior art keywords
- metal film
- copper
- film
- substrate
- concentration
- Prior art date
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
- C25D5/38—Pretreatment of metallic surfaces to be electroplated of refractory metals or nickel
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
- C25D5/42—Pretreatment of metallic surfaces to be electroplated of light metals
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
- C25D5/42—Pretreatment of metallic surfaces to be electroplated of light metals
- C25D5/44—Aluminium
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemically Coating (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
このように、前処理を行って下地金属膜の表面改質を行うことで、下地金属膜と該下地金属膜の表面に形成される金属膜との密着性を更に向上させることができる。
16 前処理ユニット
22 埋込み用銅めっきユニット
24 洗浄・乾燥ユニット、
52 トレンチ
54 下地金属膜
56 自然酸化物
58 銅膜(金属膜)
60 埋込み用銅膜(第2の金属膜)
70 電気めっきユニット
72 めっき液
74 めっき槽
76 アノード
Claims (4)
- 下地金属膜の表面に自然酸化膜が形成された基板を用意し、
蟻酸銅と蟻酸アンモニウムとを、蟻酸銅の濃度が金属濃度として1〜50g/L、蟻酸アンモニウムの濃度が50〜100g/Lとなるように溶媒に溶解させためっき液中に前記基板を浸漬させながら、前記下地金属膜を陰極、別の金属を陽極とした第1の電気めっきを行って、第1の金属膜を前記下地金属膜の表面に形成し、その後、
硫酸銅めっき液を用いた第2の電気めっきを行って、前記第1の金属膜上に第2の金属膜を形成することを特徴とする金属膜形成方法。 - 前記下地金属膜は、タングステン、アルミニウム、タンタル、チタン、シリコンまたはルテニウムからなり、前記溶媒は、純水または純水と有機物との混合液であることを特徴とする請求項1に記載の金属膜形成方法。
- 前記基板をアルカリ処理液または酸性処理液に浸漬させるか、或いは前記下地金属膜の表面を電解処理または水素ガス還元処理する前処理を行うことを特徴とする請求項1または2に記載の金属膜形成方法。
- 下地金属膜の表面に自然酸化膜が形成された基板に対して、蟻酸銅と蟻酸アンモニウムとを、蟻酸銅の濃度が金属濃度として1〜50g/L、蟻酸アンモニウムの濃度が50〜100g/Lとなるように溶媒に溶解させた液体をめっき液とした第1の電気めっきを行って、前記蟻酸銅に含まれる金属からなる第1の金属膜を前記下地金属膜の表面に形成し、その後、硫酸銅めっき液を用いた第2の電気めっきを行って、前記第1の金属膜上に第2の金属膜を形成する電気めっきユニットを有することを特徴とする金属膜形成装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010284120A JP5653743B2 (ja) | 2009-12-25 | 2010-12-21 | 金属膜形成方法および装置 |
Applications Claiming Priority (3)
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---|---|---|---|
JP2009294616 | 2009-12-25 | ||
JP2009294616 | 2009-12-25 | ||
JP2010284120A JP5653743B2 (ja) | 2009-12-25 | 2010-12-21 | 金属膜形成方法および装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011149097A JP2011149097A (ja) | 2011-08-04 |
JP5653743B2 true JP5653743B2 (ja) | 2015-01-14 |
Family
ID=44186133
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010284120A Active JP5653743B2 (ja) | 2009-12-25 | 2010-12-21 | 金属膜形成方法および装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8357284B2 (ja) |
JP (1) | JP5653743B2 (ja) |
TW (1) | TWI432614B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102017006771A1 (de) * | 2016-07-18 | 2018-01-18 | Ceramtec Gmbh | Glavanische Kupferabscheidung auf Refraktärmetallisierungen |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2383895A (en) * | 1941-05-01 | 1945-08-28 | United Chromium Inc | Method of depositing copper and baths for use therein |
US20060189129A1 (en) * | 2000-03-21 | 2006-08-24 | Semitool, Inc. | Method for applying metal features onto barrier layers using ion permeable barriers |
US20050006245A1 (en) * | 2003-07-08 | 2005-01-13 | Applied Materials, Inc. | Multiple-step electrodeposition process for direct copper plating on barrier metals |
KR20020032347A (ko) * | 2000-10-25 | 2002-05-03 | 마티네즈 길러모 | 시드층 |
US6676823B1 (en) * | 2002-03-18 | 2004-01-13 | Taskem, Inc. | High speed acid copper plating |
US6812143B2 (en) * | 2002-04-26 | 2004-11-02 | International Business Machines Corporation | Process of forming copper structures |
US6743719B1 (en) * | 2003-01-22 | 2004-06-01 | Texas Instruments Incorporated | Method for forming a conductive copper structure |
JP4480509B2 (ja) * | 2004-08-05 | 2010-06-16 | 新光電気工業株式会社 | 銅ストライクめっき浴 |
US20070141818A1 (en) * | 2005-12-19 | 2007-06-21 | Bulent Basol | Method of depositing materials on full face of a wafer |
US7405153B2 (en) * | 2006-01-17 | 2008-07-29 | International Business Machines Corporation | Method for direct electroplating of copper onto a non-copper plateable layer |
JP5179092B2 (ja) | 2006-10-03 | 2013-04-10 | 新光電気工業株式会社 | 銅膜の形成方法 |
US7964506B1 (en) * | 2008-03-06 | 2011-06-21 | Novellus Systems, Inc. | Two step copper electroplating process with anneal for uniform across wafer deposition and void free filling on ruthenium coated wafers |
US20090250352A1 (en) * | 2008-04-04 | 2009-10-08 | Emat Technology, Llc | Methods for electroplating copper |
-
2010
- 2010-12-21 JP JP2010284120A patent/JP5653743B2/ja active Active
- 2010-12-23 US US12/977,592 patent/US8357284B2/en active Active
- 2010-12-23 TW TW099145436A patent/TWI432614B/zh active
Also Published As
Publication number | Publication date |
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TWI432614B (zh) | 2014-04-01 |
JP2011149097A (ja) | 2011-08-04 |
US8357284B2 (en) | 2013-01-22 |
US20110155581A1 (en) | 2011-06-30 |
TW201131025A (en) | 2011-09-16 |
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