JP2002237497A - 半導体素子の電極形成方法 - Google Patents
半導体素子の電極形成方法Info
- Publication number
- JP2002237497A JP2002237497A JP2001033156A JP2001033156A JP2002237497A JP 2002237497 A JP2002237497 A JP 2002237497A JP 2001033156 A JP2001033156 A JP 2001033156A JP 2001033156 A JP2001033156 A JP 2001033156A JP 2002237497 A JP2002237497 A JP 2002237497A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- aluminum
- palladium
- solution
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 39
- 239000004065 semiconductor Substances 0.000 title claims description 35
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 46
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 46
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 17
- 238000007747 plating Methods 0.000 claims abstract description 15
- 238000007772 electroless plating Methods 0.000 claims abstract description 9
- 230000033116 oxidation-reduction process Effects 0.000 claims abstract description 5
- 239000000243 solution Substances 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 239000003054 catalyst Substances 0.000 claims description 13
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 claims description 9
- 239000012670 alkaline solution Substances 0.000 claims description 7
- 230000004913 activation Effects 0.000 claims description 6
- 230000003213 activating effect Effects 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 54
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract description 35
- 229910052725 zinc Inorganic materials 0.000 abstract description 35
- 239000011701 zinc Substances 0.000 abstract description 35
- 229910052759 nickel Inorganic materials 0.000 abstract description 27
- 239000002245 particle Substances 0.000 abstract description 16
- 238000007598 dipping method Methods 0.000 abstract description 3
- 239000002253 acid Substances 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract 2
- 239000003513 alkali Substances 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 abstract 1
- 238000006467 substitution reaction Methods 0.000 description 15
- 238000005530 etching Methods 0.000 description 10
- 238000007654 immersion Methods 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 4
- 239000003929 acidic solution Substances 0.000 description 3
- 229910001854 alkali hydroxide Inorganic materials 0.000 description 3
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- -1 as shown in FIG. 1C Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001033156A JP2002237497A (ja) | 2001-02-09 | 2001-02-09 | 半導体素子の電極形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001033156A JP2002237497A (ja) | 2001-02-09 | 2001-02-09 | 半導体素子の電極形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002237497A true JP2002237497A (ja) | 2002-08-23 |
| JP2002237497A5 JP2002237497A5 (enExample) | 2008-01-24 |
Family
ID=18896953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001033156A Pending JP2002237497A (ja) | 2001-02-09 | 2001-02-09 | 半導体素子の電極形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002237497A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2131391A3 (en) * | 2008-05-28 | 2010-08-25 | Honeywell International Inc. | Method of making self-aligned nanotube contact structures |
| US8044511B2 (en) | 2004-07-29 | 2011-10-25 | Kyocera Corporation | Function element and function element mounting structure |
| WO2012125587A1 (en) * | 2011-03-11 | 2012-09-20 | Avery Dennison Corporation | Sheet assembly with aluminum based electrodes |
| CN111742395A (zh) * | 2018-02-22 | 2020-10-02 | 三菱电机株式会社 | 半导体元件及其制造方法 |
| CN113496995A (zh) * | 2020-03-20 | 2021-10-12 | 日月光半导体制造股份有限公司 | 半导体装置和其制造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58185794A (ja) * | 1982-04-21 | 1983-10-29 | Hitachi Ltd | パラジウム活性化液 |
| JPH05156456A (ja) * | 1991-11-29 | 1993-06-22 | Nippon Chem Ind Co Ltd | アルミニウム系基材の無電解めっき前処理剤及びその無電解めっき方法 |
| JPH09326395A (ja) * | 1996-06-06 | 1997-12-16 | Matsushita Electric Ind Co Ltd | 半導体装置の電極形成方法 |
| JP2000328254A (ja) * | 1999-05-19 | 2000-11-28 | Meltex Inc | 無電解ニッケルめっき浴組成物およびそれを用いて形成された無電解ニッケル皮膜を有するめっき形成体 |
-
2001
- 2001-02-09 JP JP2001033156A patent/JP2002237497A/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58185794A (ja) * | 1982-04-21 | 1983-10-29 | Hitachi Ltd | パラジウム活性化液 |
| JPH05156456A (ja) * | 1991-11-29 | 1993-06-22 | Nippon Chem Ind Co Ltd | アルミニウム系基材の無電解めっき前処理剤及びその無電解めっき方法 |
| JPH09326395A (ja) * | 1996-06-06 | 1997-12-16 | Matsushita Electric Ind Co Ltd | 半導体装置の電極形成方法 |
| JP2000328254A (ja) * | 1999-05-19 | 2000-11-28 | Meltex Inc | 無電解ニッケルめっき浴組成物およびそれを用いて形成された無電解ニッケル皮膜を有するめっき形成体 |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8044511B2 (en) | 2004-07-29 | 2011-10-25 | Kyocera Corporation | Function element and function element mounting structure |
| EP2131391A3 (en) * | 2008-05-28 | 2010-08-25 | Honeywell International Inc. | Method of making self-aligned nanotube contact structures |
| US8973260B2 (en) | 2008-05-28 | 2015-03-10 | Honeywell International Inc. | Method of making self-aligned nanotube contact structures |
| WO2012125587A1 (en) * | 2011-03-11 | 2012-09-20 | Avery Dennison Corporation | Sheet assembly with aluminum based electrodes |
| US9520509B2 (en) | 2011-03-11 | 2016-12-13 | Avery Dennison Retail Information Services, Llc | Sheet assembly with aluminum based electrodes |
| CN111742395A (zh) * | 2018-02-22 | 2020-10-02 | 三菱电机株式会社 | 半导体元件及其制造方法 |
| JPWO2019163484A1 (ja) * | 2018-02-22 | 2020-10-08 | 三菱電機株式会社 | 半導体素子及びその製造方法 |
| CN113496995A (zh) * | 2020-03-20 | 2021-10-12 | 日月光半导体制造股份有限公司 | 半导体装置和其制造方法 |
| CN113496995B (zh) * | 2020-03-20 | 2025-08-15 | 日月光半导体制造股份有限公司 | 半导体装置和其制造方法 |
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