JP2002237497A5 - - Google Patents
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- Publication number
- JP2002237497A5 JP2002237497A5 JP2001033156A JP2001033156A JP2002237497A5 JP 2002237497 A5 JP2002237497 A5 JP 2002237497A5 JP 2001033156 A JP2001033156 A JP 2001033156A JP 2001033156 A JP2001033156 A JP 2001033156A JP 2002237497 A5 JP2002237497 A5 JP 2002237497A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- forming
- semiconductor element
- metal catalyst
- electroless plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical group [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000033116 oxidation-reduction process Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001033156A JP2002237497A (ja) | 2001-02-09 | 2001-02-09 | 半導体素子の電極形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001033156A JP2002237497A (ja) | 2001-02-09 | 2001-02-09 | 半導体素子の電極形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002237497A JP2002237497A (ja) | 2002-08-23 |
| JP2002237497A5 true JP2002237497A5 (enExample) | 2008-01-24 |
Family
ID=18896953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001033156A Pending JP2002237497A (ja) | 2001-02-09 | 2001-02-09 | 半導体素子の電極形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002237497A (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006011601A1 (ja) | 2004-07-29 | 2006-02-02 | Kyocera Corporation | 機能素子及びその製造方法、並びに機能素子実装構造体 |
| US8973260B2 (en) * | 2008-05-28 | 2015-03-10 | Honeywell International Inc. | Method of making self-aligned nanotube contact structures |
| AU2012229161A1 (en) * | 2011-03-11 | 2013-09-26 | Avery Dennison Corporation | Sheet assembly with aluminum based electrodes |
| WO2019163484A1 (ja) * | 2018-02-22 | 2019-08-29 | 三菱電機株式会社 | 半導体素子及びその製造方法 |
| US11495557B2 (en) * | 2020-03-20 | 2022-11-08 | Advanced Semiconductor Engineering, Inc. | Semiconductor device and method of manufacturing the same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58185794A (ja) * | 1982-04-21 | 1983-10-29 | Hitachi Ltd | パラジウム活性化液 |
| JP3071286B2 (ja) * | 1991-11-29 | 2000-07-31 | 日本化学工業株式会社 | アルミニウム系基材の無電解めっき前処理剤及びその無電解めっき方法 |
| JPH09326395A (ja) * | 1996-06-06 | 1997-12-16 | Matsushita Electric Ind Co Ltd | 半導体装置の電極形成方法 |
| JP2000328254A (ja) * | 1999-05-19 | 2000-11-28 | Meltex Inc | 無電解ニッケルめっき浴組成物およびそれを用いて形成された無電解ニッケル皮膜を有するめっき形成体 |
-
2001
- 2001-02-09 JP JP2001033156A patent/JP2002237497A/ja active Pending
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