JP2002231828A5 - - Google Patents
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- Publication number
- JP2002231828A5 JP2002231828A5 JP2001029779A JP2001029779A JP2002231828A5 JP 2002231828 A5 JP2002231828 A5 JP 2002231828A5 JP 2001029779 A JP2001029779 A JP 2001029779A JP 2001029779 A JP2001029779 A JP 2001029779A JP 2002231828 A5 JP2002231828 A5 JP 2002231828A5
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Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001029779A JP4592193B2 (ja) | 2001-02-06 | 2001-02-06 | 半導体装置の製造方法 |
| US09/909,975 US7061128B2 (en) | 2001-02-06 | 2001-07-23 | Semiconductor device and manufacturing method of the same |
| TW090122984A TW508797B (en) | 2001-02-06 | 2001-09-19 | Semiconductor device and manufacturing method of the same |
| KR10-2001-0058570A KR100438238B1 (ko) | 2001-02-06 | 2001-09-21 | 반도체 장치 및 그 제조 방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001029779A JP4592193B2 (ja) | 2001-02-06 | 2001-02-06 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002231828A JP2002231828A (ja) | 2002-08-16 |
| JP2002231828A5 true JP2002231828A5 (https=) | 2008-03-27 |
| JP4592193B2 JP4592193B2 (ja) | 2010-12-01 |
Family
ID=18894084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001029779A Expired - Fee Related JP4592193B2 (ja) | 2001-02-06 | 2001-02-06 | 半導体装置の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7061128B2 (https=) |
| JP (1) | JP4592193B2 (https=) |
| KR (1) | KR100438238B1 (https=) |
| TW (1) | TW508797B (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004058468A1 (de) * | 2004-11-25 | 2006-06-01 | Atmel Germany Gmbh | MOS-Transistor mit reduziertem Kink-Effekt und Verfahren zu seiner Herstellung |
| KR100680958B1 (ko) * | 2005-02-23 | 2007-02-09 | 주식회사 하이닉스반도체 | 피모스 트랜지스터의 제조방법 |
| KR100760910B1 (ko) * | 2005-12-29 | 2007-09-21 | 동부일렉트로닉스 주식회사 | 공통 컨택을 갖는 에스램 메모리 소자 |
| JP2017069231A (ja) * | 2015-09-28 | 2017-04-06 | ソニー株式会社 | Ｍｏｓ型電界効果トランジスタ、半導体集積回路、固体撮像素子、及び、電子機器 |
| CN113130377A (zh) * | 2021-04-14 | 2021-07-16 | 上海积塔半导体有限公司 | 减小硅局部氧化层的鸟嘴宽度的方法 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02246372A (ja) * | 1989-03-20 | 1990-10-02 | Fujitsu Ltd | 半導体装置とその製造方法 |
| US5135882A (en) * | 1989-07-31 | 1992-08-04 | Micron Technology, Inc. | Technique for forming high-value inter-nodal coupling resistance for rad-hard applications in a double-poly, salicide process using local interconnect |
| JP2754977B2 (ja) * | 1991-02-08 | 1998-05-20 | 日本電気株式会社 | スタティックメモリ |
| JP3330962B2 (ja) * | 1991-06-28 | 2002-10-07 | 同和鉱業株式会社 | 酸化物超電導体の製造方法 |
| JP2697392B2 (ja) * | 1991-07-30 | 1998-01-14 | ソニー株式会社 | 相補型半導体装置の製造方法 |
| KR970007589B1 (ko) * | 1991-09-13 | 1997-05-10 | 니뽄 덴끼 가부시끼가이샤 | 정적 메모리 장치 |
| WO1993007641A1 (fr) * | 1991-10-01 | 1993-04-15 | Hitachi, Ltd. | Dispositif a circuits integres a semi-conducteur et fabrication de ce dispositif |
| JPH05198570A (ja) * | 1991-10-01 | 1993-08-06 | Hitachi Ltd | 半導体集積回路装置及びその製造方法 |
| KR100189727B1 (ko) * | 1991-10-15 | 1999-06-01 | 구본준 | 반도체 소자의 액티브 영역 확대 및 소자 격리방법 |
| JP3236720B2 (ja) * | 1993-02-10 | 2001-12-10 | 三菱電機株式会社 | 半導体記憶装置およびその製造方法 |
| US5358890A (en) * | 1993-04-19 | 1994-10-25 | Motorola Inc. | Process for fabricating isolation regions in a semiconductor device |
| JPH08111462A (ja) * | 1994-10-12 | 1996-04-30 | Mitsubishi Electric Corp | 半導体記憶装置およびその製造方法 |
| JP3400891B2 (ja) * | 1995-05-29 | 2003-04-28 | 三菱電機株式会社 | 半導体記憶装置およびその製造方法 |
| US5650350A (en) * | 1995-08-11 | 1997-07-22 | Micron Technology, Inc. | Semiconductor processing method of forming a static random access memory cell and static random access memory cell |
| JPH09252129A (ja) * | 1996-03-15 | 1997-09-22 | Sony Corp | 電界効果トランジスタ及びその製造方法 |
| US5741737A (en) * | 1996-06-27 | 1998-04-21 | Cypress Semiconductor Corporation | MOS transistor with ramped gate oxide thickness and method for making same |
| JP3710880B2 (ja) * | 1996-06-28 | 2005-10-26 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| KR100277878B1 (ko) * | 1996-11-08 | 2001-02-01 | 김영환 | 트랜지스터의 구조 및 제조방법 |
| JP3665183B2 (ja) * | 1997-07-23 | 2005-06-29 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
| KR100247933B1 (ko) * | 1997-08-22 | 2000-03-15 | 윤종용 | 버티드 콘택을 갖는 반도체 소자 및 그 제조방법 |
| JP4326606B2 (ja) * | 1998-03-26 | 2009-09-09 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
| JP3415459B2 (ja) * | 1998-12-07 | 2003-06-09 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP3955404B2 (ja) | 1998-12-28 | 2007-08-08 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
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2001
- 2001-02-06 JP JP2001029779A patent/JP4592193B2/ja not_active Expired - Fee Related
- 2001-07-23 US US09/909,975 patent/US7061128B2/en not_active Expired - Fee Related
- 2001-09-19 TW TW090122984A patent/TW508797B/zh not_active IP Right Cessation
- 2001-09-21 KR KR10-2001-0058570A patent/KR100438238B1/ko not_active Expired - Fee Related