JP2002230983A5 - - Google Patents

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Publication number
JP2002230983A5
JP2002230983A5 JP2001026030A JP2001026030A JP2002230983A5 JP 2002230983 A5 JP2002230983 A5 JP 2002230983A5 JP 2001026030 A JP2001026030 A JP 2001026030A JP 2001026030 A JP2001026030 A JP 2001026030A JP 2002230983 A5 JP2002230983 A5 JP 2002230983A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001026030A
Other versions
JP2002230983A (ja
JP4671512B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2001026030A priority Critical patent/JP4671512B2/ja
Priority claimed from JP2001026030A external-priority patent/JP4671512B2/ja
Priority to TW090119860A priority patent/TW523751B/zh
Priority to US09/931,243 priority patent/US6459640B1/en
Priority to KR10-2001-0069567A priority patent/KR100464523B1/ko
Publication of JP2002230983A publication Critical patent/JP2002230983A/ja
Publication of JP2002230983A5 publication Critical patent/JP2002230983A5/ja
Application granted granted Critical
Publication of JP4671512B2 publication Critical patent/JP4671512B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001026030A 2001-02-01 2001-02-01 不揮発性半導体メモリ Expired - Fee Related JP4671512B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001026030A JP4671512B2 (ja) 2001-02-01 2001-02-01 不揮発性半導体メモリ
TW090119860A TW523751B (en) 2001-02-01 2001-08-14 Nonvolatile semiconductor memory and automatic erasing/writing method thereof
US09/931,243 US6459640B1 (en) 2001-02-01 2001-08-17 Nonvolatile semiconductor memory and automatic erasing/writing method thereof
KR10-2001-0069567A KR100464523B1 (ko) 2001-02-01 2001-11-08 비휘발성 반도체 메모리 및 그 자동 소거/기입 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001026030A JP4671512B2 (ja) 2001-02-01 2001-02-01 不揮発性半導体メモリ

Publications (3)

Publication Number Publication Date
JP2002230983A JP2002230983A (ja) 2002-08-16
JP2002230983A5 true JP2002230983A5 (ja) 2008-01-17
JP4671512B2 JP4671512B2 (ja) 2011-04-20

Family

ID=18890922

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001026030A Expired - Fee Related JP4671512B2 (ja) 2001-02-01 2001-02-01 不揮発性半導体メモリ

Country Status (4)

Country Link
US (1) US6459640B1 (ja)
JP (1) JP4671512B2 (ja)
KR (1) KR100464523B1 (ja)
TW (1) TW523751B (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7984111B2 (en) * 2002-09-12 2011-07-19 Broadcom Corporation Software applications incorporating functionalities based on data-type and access
US7016245B2 (en) * 2004-02-02 2006-03-21 Texas Instruments Incorporated Tracking circuit enabling quick/accurate retrieval of data stored in a memory array
US7310282B2 (en) * 2005-12-30 2007-12-18 Lexmark International, Inc. Distributed programmed memory cell overwrite protection
KR100757411B1 (ko) * 2006-02-03 2007-09-11 삼성전자주식회사 옵션 퓨즈 회로를 이용한 반도체 메모리 장치의 전압재설정 회로 및 그 방법
US7487287B2 (en) * 2006-02-08 2009-02-03 Atmel Corporation Time efficient embedded EEPROM/processor control method
US8082476B2 (en) 2006-12-22 2011-12-20 Sidense Corp. Program verify method for OTP memories
JP2008181614A (ja) * 2007-01-25 2008-08-07 Toshiba Corp 半導体記憶装置
US7969804B1 (en) * 2008-09-22 2011-06-28 Cypress Semiconductor Corporation Memory architecture having a reference current generator that provides two reference currents
EP2892054B1 (en) * 2012-08-29 2019-08-07 Renesas Electronics Corporation Semiconductor device
US10175271B2 (en) * 2012-12-31 2019-01-08 Silicon Laboratories Inc. Apparatus for differencing comparator and associated methods

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL9001333A (nl) * 1990-06-13 1992-01-02 Philips Nv Werkwijze voor het besturen van een zelftest in een dataverwerkend systeem en dataverwerkend systeem geschikt voor deze werkwijze.
US5199032A (en) * 1990-09-04 1993-03-30 Motorola, Inc. Microcontroller having an EPROM with a low voltage program inhibit circuit
US5267218A (en) * 1992-03-31 1993-11-30 Intel Corporation Nonvolatile memory card with a single power supply input
US5339279A (en) * 1993-05-07 1994-08-16 Motorola, Inc. Block erasable flash EEPROM apparatus and method thereof
JPH0729386A (ja) * 1993-07-13 1995-01-31 Hitachi Ltd フラッシュメモリ及びマイクロコンピュータ
JP2812154B2 (ja) * 1993-07-27 1998-10-22 日本電気株式会社 半導体記憶装置
US5890191A (en) * 1996-05-10 1999-03-30 Motorola, Inc. Method and apparatus for providing erasing and programming protection for electrically erasable programmable read only memory
US5719880A (en) * 1996-09-20 1998-02-17 Texas Instruments Incorporated, A Delaware Corporation On-chip operation for memories
US6292868B1 (en) * 1996-10-15 2001-09-18 Micron Technology, Inc. System and method for encoding data to reduce power and time required to write the encoded data to a flash memory
TW389910B (en) 1997-07-03 2000-05-11 Seiko Epson Corp Programmable nonvolatile memory apparatus and microcomputer using the same
JP4039532B2 (ja) * 1997-10-02 2008-01-30 株式会社ルネサステクノロジ 半導体集積回路装置
JP3202673B2 (ja) * 1998-01-26 2001-08-27 株式会社東芝 不揮発性半導体メモリ装置
JPH11328980A (ja) 1998-05-19 1999-11-30 Hitachi Ltd 不揮発性半導体メモリ
JP2000123584A (ja) * 1998-10-19 2000-04-28 Hitachi Ltd 不揮発性半導体メモリおよびそれを内蔵した半導体集積回路
JP2001052495A (ja) * 1999-06-03 2001-02-23 Toshiba Corp 半導体メモリ
JP2001028191A (ja) * 1999-07-12 2001-01-30 Mitsubishi Electric Corp 不揮発性半導体メモリの自動消去方法

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