JP2002110080A5 - - Google Patents

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Publication number
JP2002110080A5
JP2002110080A5 JP2001223304A JP2001223304A JP2002110080A5 JP 2002110080 A5 JP2002110080 A5 JP 2002110080A5 JP 2001223304 A JP2001223304 A JP 2001223304A JP 2001223304 A JP2001223304 A JP 2001223304A JP 2002110080 A5 JP2002110080 A5 JP 2002110080A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2001223304A
Other versions
JP4947402B2 (ja
JP2002110080A (ja
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Priority claimed from US09/625,718 external-priority patent/US6541781B1/en
Application filed filed Critical
Publication of JP2002110080A publication Critical patent/JP2002110080A/ja
Publication of JP2002110080A5 publication Critical patent/JP2002110080A5/ja
Application granted granted Critical
Publication of JP4947402B2 publication Critical patent/JP4947402B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001223304A 2000-07-25 2001-07-24 導波管および質量分析装置 Expired - Fee Related JP4947402B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US625718 2000-07-25
US09/625,718 US6541781B1 (en) 2000-07-25 2000-07-25 Waveguide for microwave excitation of plasma in an ion beam guide

Publications (3)

Publication Number Publication Date
JP2002110080A JP2002110080A (ja) 2002-04-12
JP2002110080A5 true JP2002110080A5 (ja) 2008-07-24
JP4947402B2 JP4947402B2 (ja) 2012-06-06

Family

ID=24507265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001223304A Expired - Fee Related JP4947402B2 (ja) 2000-07-25 2001-07-24 導波管および質量分析装置

Country Status (7)

Country Link
US (1) US6541781B1 (ja)
EP (1) EP1176623B1 (ja)
JP (1) JP4947402B2 (ja)
KR (1) KR100602319B1 (ja)
DE (1) DE60134091D1 (ja)
SG (1) SG106056A1 (ja)
TW (1) TW527617B (ja)

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US6885014B2 (en) 2002-05-01 2005-04-26 Axcelis Technologies, Inc. Symmetric beamline and methods for generating a mass-analyzed ribbon ion beam
US6703628B2 (en) 2000-07-25 2004-03-09 Axceliss Technologies, Inc Method and system for ion beam containment in an ion beam guide
US6414329B1 (en) * 2000-07-25 2002-07-02 Axcelis Technologies, Inc. Method and system for microwave excitation of plasma in an ion beam guide
JP3869680B2 (ja) 2001-05-29 2007-01-17 株式会社 Ｓｅｎ−Ｓｈｉ・アクセリス カンパニー イオン注入装置
JP3840108B2 (ja) * 2001-12-27 2006-11-01 株式会社 Ｓｅｎ−Ｓｈｉ・アクセリス カンパニー イオンビーム処理方法及び処理装置
US7217940B2 (en) * 2003-04-08 2007-05-15 Cymer, Inc. Collector for EUV light source
US6891174B2 (en) * 2003-07-31 2005-05-10 Axcelis Technologies, Inc. Method and system for ion beam containment using photoelectrons in an ion beam guide
US7459692B2 (en) * 2004-11-19 2008-12-02 Varian Semiconductor Equipment Associates, Inc. Electron confinement inside magnet of ion implanter
US7427751B2 (en) * 2006-02-15 2008-09-23 Varian, Inc. High sensitivity slitless ion source mass spectrometer for trace gas leak detection
CA2725544C (en) * 2008-05-30 2017-12-19 The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University A radio-frequency-free hybrid electrostatic/magnetostatic cell for transporting, trapping, and dissociating ions in mass spectrometers
US9305760B2 (en) 2012-08-16 2016-04-05 State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University Electron source for an RF-free electronmagnetostatic electron-induced dissociation cell and use in a tandem mass spectrometer
EP2907155A4 (en) * 2012-10-12 2016-07-13 Dh Technologies Dev Pte Ltd ION GUIDANCE FOR MASS SPECTROMETRY
US9576767B2 (en) 2013-05-15 2017-02-21 Indian Institute Of Technology Kanpur Focused ion beam systems and methods of operation
US9299536B2 (en) * 2013-10-17 2016-03-29 Varian Semiconductor Equipment Associates, Inc. Wide metal-free plasma flood gun
JP6207418B2 (ja) * 2014-02-10 2017-10-04 住友重機械イオンテクノロジー株式会社 高エネルギーイオン注入装置、ビーム平行化器、及びビーム平行化方法
CN105448371A (zh) * 2015-11-20 2016-03-30 中国电子科技集团公司第四十八研究所 一种静电场加速的高能离子注入机的高压防护及射线屏蔽系统
US9734982B1 (en) * 2016-05-24 2017-08-15 Nissin Ion Equipment Co., Ltd. Beam current density distribution adjustment device and ion implanter

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US4383177A (en) 1980-12-24 1983-05-10 International Business Machines Corporation Multipole implantation-isotope separation ion beam source
US5022977A (en) * 1986-09-29 1991-06-11 Nippon Telegraph And Telephone Corporation Ion generation apparatus and thin film forming apparatus and ion source utilizing the ion generation apparatus
US5433788A (en) 1987-01-19 1995-07-18 Hitachi, Ltd. Apparatus for plasma treatment using electron cyclotron resonance
KR880013424A (ko) * 1987-04-08 1988-11-30 미타 가츠시게 플라즈머 장치
US5370765A (en) 1989-03-09 1994-12-06 Applied Microwave Plasma Concepts, Inc. Electron cyclotron resonance plasma source and method of operation
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US5081398A (en) * 1989-10-20 1992-01-14 Board Of Trustees Operating Michigan State University Resonant radio frequency wave coupler apparatus using higher modes
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US5206516A (en) 1991-04-29 1993-04-27 International Business Machines Corporation Low energy, steered ion beam deposition system having high current at low pressure
US5466929A (en) * 1992-02-21 1995-11-14 Hitachi, Ltd. Apparatus and method for suppressing electrification of sample in charged beam irradiation apparatus
FR2718568B1 (fr) * 1994-04-06 1996-07-05 France Telecom Procédé d'implantation haute énergie à partir d'un implanteur de type faible ou moyen courant et dispositifs correspondants.
JP3123735B2 (ja) * 1995-04-28 2001-01-15 株式会社日立製作所 イオンビーム処理装置
JPH0987851A (ja) * 1995-09-21 1997-03-31 Canon Inc マイクロ波プラズマ処理装置及び処理方法
US5554857A (en) 1995-10-19 1996-09-10 Eaton Corporation Method and apparatus for ion beam formation in an ion implanter
US5686796A (en) * 1995-12-20 1997-11-11 International Business Machines Corporation Ion implantation helicon plasma source with magnetic dipoles
JPH09180662A (ja) 1995-12-27 1997-07-11 Hitachi Ltd イオンビーム装置
US5811823A (en) * 1996-02-16 1998-09-22 Eaton Corporation Control mechanisms for dosimetry control in ion implantation systems
US5975014A (en) * 1996-07-08 1999-11-02 Asm Japan K.K. Coaxial resonant multi-port microwave applicator for an ECR plasma source
US5707452A (en) * 1996-07-08 1998-01-13 Applied Microwave Plasma Concepts, Inc. Coaxial microwave applicator for an electron cyclotron resonance plasma source
US5703375A (en) 1996-08-02 1997-12-30 Eaton Corporation Method and apparatus for ion beam neutralization
GB9710380D0 (en) * 1997-05-20 1997-07-16 Applied Materials Inc Electron flood apparatus for neutralising charge build-up on a substrate during ion implantation
DE69807006T2 (de) * 1997-05-22 2003-01-02 Canon Kk Plasmabehandlungsvorrichtung mit einem mit ringförmigem Wellenleiter versehenen Mikrowellenauftragsgerät und Behandlungsverfahren
US6130436A (en) * 1998-06-02 2000-10-10 Varian Semiconductor Equipment Associates, Inc. Acceleration and analysis architecture for ion implanter
US6541780B1 (en) * 1998-07-28 2003-04-01 Varian Semiconductor Equipment Associates, Inc. Particle beam current monitoring technique
US6414329B1 (en) * 2000-07-25 2002-07-02 Axcelis Technologies, Inc. Method and system for microwave excitation of plasma in an ion beam guide

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