JP2002203927A - 能動回路の上に集積された接合を有する熱的に増強された半導体チップ - Google Patents

能動回路の上に集積された接合を有する熱的に増強された半導体チップ

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Publication number
JP2002203927A
JP2002203927A JP2001337863A JP2001337863A JP2002203927A JP 2002203927 A JP2002203927 A JP 2002203927A JP 2001337863 A JP2001337863 A JP 2001337863A JP 2001337863 A JP2001337863 A JP 2001337863A JP 2002203927 A JP2002203927 A JP 2002203927A
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Japan
Prior art keywords
chip
active
lines
heat
conductor
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Pending
Application number
JP2001337863A
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English (en)
Japanese (ja)
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JP2002203927A5 (enExample
Inventor
Taylor R Efland
アール、エフランド テイラー
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Texas Instruments Inc
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Texas Instruments Inc
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Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JP2002203927A publication Critical patent/JP2002203927A/ja
Publication of JP2002203927A5 publication Critical patent/JP2002203927A5/ja
Pending legal-status Critical Current

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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
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  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
JP2001337863A 2000-11-03 2001-11-02 能動回路の上に集積された接合を有する熱的に増強された半導体チップ Pending JP2002203927A (ja)

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Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6359334B1 (en) 1999-06-08 2002-03-19 Micron Technology, Inc. Thermally conductive adhesive tape for semiconductor devices and method using the same
US6597065B1 (en) * 2000-11-03 2003-07-22 Texas Instruments Incorporated Thermally enhanced semiconductor chip having integrated bonds over active circuits
JP3952963B2 (ja) * 2003-02-21 2007-08-01 ヤマハ株式会社 半導体装置及びその製造方法
US7111771B2 (en) * 2003-03-31 2006-09-26 Intel Corporation Solders with surfactant-refined grain sizes, solder bumps made thereof, and methods of making same
US6812580B1 (en) * 2003-06-09 2004-11-02 Freescale Semiconductor, Inc. Semiconductor package having optimized wire bond positioning
US20050151268A1 (en) * 2004-01-08 2005-07-14 Boyd William D. Wafer-level assembly method for chip-size devices having flipped chips
TWI232571B (en) * 2004-04-09 2005-05-11 Advanced Semiconductor Eng Wafer structure and method for forming a redistribution layer therein
US7084494B2 (en) * 2004-06-18 2006-08-01 Texas Instruments Incorporated Semiconductor package having integrated metal parts for thermal enhancement
US7453156B2 (en) 2004-11-12 2008-11-18 Chippac, Inc. Wire bond interconnection
US7868468B2 (en) * 2004-11-12 2011-01-11 Stats Chippac Ltd. Wire bonding structure and method that eliminates special wire bondable finish and reduces bonding pitch on substrates
US7476976B2 (en) * 2005-02-23 2009-01-13 Texas Instruments Incorporated Flip chip package with advanced electrical and thermal properties for high current designs
US7355289B2 (en) * 2005-07-29 2008-04-08 Freescale Semiconductor, Inc. Packaged integrated circuit with enhanced thermal dissipation
JP5481769B2 (ja) * 2006-11-22 2014-04-23 日亜化学工業株式会社 半導体装置及びその製造方法
US7572679B2 (en) * 2007-07-26 2009-08-11 Texas Instruments Incorporated Heat extraction from packaged semiconductor chips, scalable with chip area
US7800207B2 (en) * 2007-10-17 2010-09-21 Fairchild Semiconductor Corporation Method for connecting a die attach pad to a lead frame and product thereof
US7960845B2 (en) * 2008-01-03 2011-06-14 Linear Technology Corporation Flexible contactless wire bonding structure and methodology for semiconductor device
JP5062283B2 (ja) * 2009-04-30 2012-10-31 日亜化学工業株式会社 半導体装置及びその製造方法
EP2256802A1 (en) * 2009-05-26 2010-12-01 Nxp B.V. Semiconductor chip and method of manufacturing a semiconductor chip
US9271390B2 (en) * 2014-07-15 2016-02-23 Freescale Semiconductor, Inc. Semiconductor device with active shielding of leads
CN107567600B (zh) * 2015-05-08 2021-03-09 惠普发展公司，有限责任合伙企业 辊阻尼器
US9530798B1 (en) 2015-06-24 2016-12-27 Globalfoundries Inc. High performance heat shields with reduced capacitance

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT7821073V0 (it) * 1978-03-09 1978-03-09 Ates Componenti Elettron Morsetto per il fissaggio di un dispositivo a semiconduttore ad un dissipatore di calore.
US4346396A (en) * 1979-03-12 1982-08-24 Western Electric Co., Inc. Electronic device assembly and methods of making same
US4518982A (en) * 1981-02-27 1985-05-21 Motorola, Inc. High current package with multi-level leads
JP2616565B2 (ja) * 1994-09-12 1997-06-04 日本電気株式会社 電子部品組立体
US5610442A (en) * 1995-03-27 1997-03-11 Lsi Logic Corporation Semiconductor device package fabrication method and apparatus
US6075289A (en) * 1996-10-24 2000-06-13 Tessera, Inc. Thermally enhanced packaged semiconductor assemblies
US6597065B1 (en) * 2000-11-03 2003-07-22 Texas Instruments Incorporated Thermally enhanced semiconductor chip having integrated bonds over active circuits

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