US20070145607A1 - System to wirebond power signals to flip-chip core - Google Patents
System to wirebond power signals to flip-chip core Download PDFInfo
- Publication number
- US20070145607A1 US20070145607A1 US11/320,282 US32028205A US2007145607A1 US 20070145607 A1 US20070145607 A1 US 20070145607A1 US 32028205 A US32028205 A US 32028205A US 2007145607 A1 US2007145607 A1 US 2007145607A1
- Authority
- US
- United States
- Prior art keywords
- wire
- electrical conductor
- conductive element
- conductive
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5286—Arrangements of power or ground buses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05553—Shape in top view being rectangular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05556—Shape in side view
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05644—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05647—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/4813—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
- H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/48844—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
- H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/48847—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8501—Cleaning, e.g. oxide removal step, desmearing
- H01L2224/85012—Mechanical cleaning, e.g. abrasion using hydro blasting, brushes, ultrasonic cleaning, dry ice blasting, gas-flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0504—14th Group
- H01L2924/05042—Si3N4
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Definitions
- Wirebond packages and flip-chip packages are commonly used to package one or more integrated circuit (IC) die. According to both types of packages, a lower surface of an IC die is coupled to an upper surface of an IC package substrate.
- a wirebond package includes wires to connect electrical contacts of a rear surface of the IC die to electrical contacts of the IC package substrate.
- a flip-chip package includes electrical interconnects (e.g., solder bumps) to connect electrical contacts of a front surface of an inverted IC die to electrical contacts of the IC package substrate.
- a wirebond package is typically less expensive than an equivalent flip-chip package. However, a wirebond package may not be suitable for some applications.
- An IC die used in a wirebond package requires a peripheral I/O ring that includes the above-mentioned electrical contacts. Accordingly, such an IC die will be larger than would be required if the IC die were intended for a flip-chip package.
- a wirebond package also delivers power to the periphery of an IC die. Such power delivery is less uniform than the power delivery of a flip-chip package, in which power is delivered more directly to a core of the IC die.
- an IC die in a wirebond package or a flip-chip package. Due at least to the above-described differences in power delivery and I/O routing, the design and fabrication of an IC die differs substantially depending on whether the IC die will be packaged in a wirebond package or a flip-chip package.
- FIG. 1 is a top view of an apparatus according to some embodiments.
- FIG. 2 is a cross-sectional side view of an apparatus according to some embodiments.
- FIG. 3 is a close-up cross-sectional side view of a conductive pillar of an apparatus according to some embodiments.
- FIG. 4 is a close-up cross-sectional side view of a conductive element of an apparatus according to some embodiments.
- FIG. 5 is a diagram of a process to fabricate an apparatus according to some embodiments.
- FIG. 6 is a top view of an IC die,according to some embodiments.
- FIG. 7 is a top view of an IC die and a micropassivation layer according to some embodiments.
- FIGS. 8A through 8C are cross-sectional side views of an apparatus to illustrate wirebonding according to some embodiments.
- FIG. 9 is a cross-sectional side view of an apparatus to illustrate wirebonding according to some embodiments.
- FIG. 10 is a cross-sectional side view of an apparatus to illustrate wirebonding according to some embodiments.
- FIG. 11 is a side view of an apparatus according to some embodiments.
- FIG. 12 is a top view of an IC die including conductive elements, conductive pillars and bonded wires according to some embodiments.
- FIG. 13 is a top view of an IC die including conductive elements, conductive pillars and bonded wires according to some embodiments.
- FIG. 14 is a top view of an IC die including conductive elements, conductive pillars and bonded wires according to some embodiments.
- FIG. 15 is a diagram of a system according to some embodiments.
- FIG. 1 is a cross-sectional side view of apparatus 10 according to some embodiments.
- Apparatus 10 includes IC die 20 , conductive pillars 30 and conductive elements 40 disposed thereon, and wires 50 bonded to one conductive pillars 30 and conductive elements 40 .
- Apparatus 10 may provide any electronic functionality that is or becomes known.
- IC die 20 includes integrated electrical devices for providing microprocessor functionality and may be fabricated using any suitable materials and fabrication techniques.
- the electrical devices of IC die 20 may be electrically connected to conductive pillars 30 and/or conductive elements 40 .
- the electrical devices may therefore also be connected to wires 50 via pillars 30 and elements 40 .
- Wires 50 connected to conductive pillars 30 carry I/O signals and wires 50 connected to conductive elements 40 carry power or ground signals according to some embodiments.
- IC die 20 defines a plurality of inner apertures, and at least one of conductive elements 40 is disposed on two or more of the plurality of inner apertures and is electrically connected to an electrical conductor through the two or more inner apertures.
- IC die 20 may also define a plurality of peripheral apertures, with one of conductive pillars 30 being disposed on one of the plurality of peripheral apertures and electrically connected to a second electrical conductor through the peripheral aperture.
- FIG. 2 is a cross-sectional view of apparatus 10 to further describe a. configuration thereof according to some embodiments.
- FIG. 2 shows IC die 20 coupled to IC package substrate 60 .
- IC package substrate 60 may include a base dielectric layer with conductive fabricated thereon and layers separated by additional dielectric layers.
- the dielectric layers may be composed of any suitable material, including but not limited to bismaleimide triazine (BT) and FR 4 in some embodiments.
- the conductive layers comprise reference planes for supplying reference voltages to electrical components that are connected to IC package substrate 60 , or routing layers including conductive traces for carrying electrical signals between such electrical components.
- IC package substrate 60 includes contacts 62 to electrically connect wires 50 to the conductive layers.
- FIG. 2 also illustrates power delivery grids.
- Power delivery grids 70 are intended to deliver power and ground signals to electrical devices of IC die 20 .
- Power delivery grids 70 may be suitable for use in a flip-chip arrangement in addition to the illustrated wirebond arrangement.
- Grids 70 are composed of 1 ⁇ m thick copper according to some embodiments.
- Conductive elements 40 may be coupled to a central portion of grids 70 .
- Conductive elements 40 may therefore provide delivery of power to a core of IC die 20 via a connected wire 50 .
- Such an arrangement may exhibit a voltage drop that is smaller than a voltage drop exhibited by conventional arrangements in which power is delivered to the periphery of IC die 20 and grids 70 .
- conductive elements 40 may comprise copper having a thickness of 60 ⁇ m.
- Two wires 50 are connected to each of illustrated pillars 30 . These two wires are asymmetric according to some embodiments. Connecting two asymmetric wires to a pillar 30 may reduce a voltage drop between IC package substrate 60 and the pillar 30 in comparison to single-wire arrangements, and may also reduce crosstalk between the two wires.
- FIG. 3 is a close-up cross-sectional side view of apparatus 10 according to some embodiments.
- Conductive pillar 30 is partially covered by oxide-resistant layer 32 , and wire 50 is bonded to bonding area 34 of pillar 30 that is not covered by layer 32 .
- Conductive pillar 30 may comprise copper or any other conductive wire-bondable material, and oxide-resistant layer may comprise polyimide, silicon oxide, silicon nitride, and/or any other suitable material for preventing oxide growth on pillar 30 .
- layer 32 comprises copper oxide or any other native oxide of the material of which pillar 30 is composed. As will be described below, layer 32 may retard growth of oxides on bonding area 34 of pillar 30 prior to bonding of wire 50 thereon.
- conductive pillar 30 is ⁇ 50 ⁇ m in height and layer 32 is ⁇ 50 nm thick.
- IC die 20 includes conductor 21 and conductive traces 22 .
- IC die 20 may also include vias, electrical devices, and conductive planes.
- Conductor 21 is disposed below peripheral aperture 23 .
- peripheral aperture 23 and conductive pillar 30 are located on a periphery of IC die 20 .
- Peripheral aperture 23 is defined by IC die 20 and is surrounded by passivation 24 .
- Passivation 24 may comprise an electrical insulator (e.g., silicon nitride) and may also be compliant in some embodiments. According to some embodiments, passivation 24 is circular and defines an opening above aperture 23 .
- Conductive pillar 30 is electrically connected to conductor 21 through aperture 23 . Accordingly, wire 50 is electrically connected to conductor 21 .
- a conductive adhesion layer is deposited on conductor 23 prior to fabrication of pillar 30 thereon.
- the adhesion layer may comprise sputtered tin/copper.
- FIG. 4 illustrates a close-up cross-sectional side view of a conductive element 40 of apparatus 10 according to some embodiments.
- Conductive element 40 is disposed on two inner apertures 25 defined by IC die 20 .
- Inner apertures 25 are disposed above conductors 26 and surrounded by insulating passivation 27 .
- inner apertures 25 may be defined within an interior area of a surface of IC die 20 .
- Conductive element 40 is partially covered by oxide-resistant layer 32 , and wires 50 are bonded to areas 44 of element 40 that are not covered by layer 32 .
- element 40 may comprise copper or any other conductive wire-bondable material, and layer 32 may comprise any suitable oxide-resistant layer for retarding growth of oxides on bonding areas 44 .
- Conductive element 40 is ⁇ 50 ⁇ m in height and layer 32 is ⁇ 50 nm thick according to some embodiments.
- Conductors 26 are disposed below inner apertures 25 and are electrically connected to conductive element 40 through apertures 25 . Conductors 26 may or may not be connected to one another within IC die 20 . In some embodiments, conductors 26 carry power or ground signals between wires 50 and power delivery grid 70 . In this regard, one or all of conductors 26 may be connected to a core portion of grid 70 . Such an arrangement may reduce a voltage drop between wires 50 and a core of IC 20 in comparison to conventional systems.
- FIG. 5 is a diagram of process 60 to fabricate an apparatus according to some embodiments.
- Process 60 may be executed by one or more devices, and all or a part of process 60 may be executed manually.
- Process 60 may be executed by an entity different from an entity that assembles an IC package from an IC die and an IC package substrate.
- a conductive pillar is fabricated on a peripheral aperture of an IC die.
- a conductive element is fabricated on two or more inner apertures of the IC die at 62 .
- the peripheral aperture may be disposed above a conductor to carry I/O signals within the IC die, and the inner apertures may be disposed above conductors to carry power or ground signals to a core of the IC die.
- the conductive pillar and the conductive element may be fabricated using any suitable techniques that are or become known. According to some embodiments, the conductive pillar and the conductive element are fabricated simultaneously using a copper electrodeposition process.
- FIG. 6 is a top view of IC die 20 after some embodiments of 62 .
- the illustrated pattern of conductive elements 40 and conductive pillars 30 may be achieved using photolithographic masking techniques.
- An oxide-resistant layer is deposited on the conductive pillar and the conductive element at 63 .
- the oxide-resistant layer is deposited using chemical vapor deposition and may comprise any suitable components. The layer may be deposited shortly after the elements and pillars are formed to retard the development of copper oxides thereon.
- the oxide-resistant layer may comprise a native oxide of the conductive pillar, in which case the layer may be “grown” at 63 .
- FIG. 7 illustrates layer 32 disposed on IC die 20 , pillars 30 and elements 40 according to some embodiments.
- a first wire is bonded to the conductive pillar at 64 .
- Bonding the first wire comprises establishing an electrical connection between the first wire and the conductive pillar.
- FIGS. 8A through 8C illustrate 64 according to some embodiments.
- FIG. 8A shows bonding head 70 pressing an end of wire 50 into oxide-resistant layer 32 .
- layer and pillar 30 deform slightly in response to the pressure. Pillar 30 may be annealed after pillar 30 is fabricated to facilitate this deformation.
- Bonding head 70 also or alternatively vibrates at or near a resonant frequency of layer 32 to allow wire 50 to penetrate and fragment layer 32 as shown in FIG. 8B .
- the resulting fragments may be dispersed uniformly at the interfacial bonding intermetallic (i.e., gold and copper) layer so as not to substantially affect the integrity or electrical resistance of the wirebond.
- FIG. 8C shows a resultant configuration.
- FIG. 9 illustrates another embodiment of 64 .
- a portion of layer 32 is removed by mechanical micro-mill 80 , which may comprise a high-speed diamond blade with Z-axis control.
- Micro-mill 80 may also remove a portion of pillar 30 as shown to substantially remove any oxides that may have formed thereon.
- the first wire may then be bonded to area 34 exposed by micro-mill 80 .
- FIG. 10 illustrates yet another embodiment of 64 .
- Device 100 comprises bonding head 110 and pre-clean tool 120 coupled to transducer block 130 .
- Bonding head 110 and pre-clean tool 120 may each operate based on energy supplied by transducer block 130 .
- Device 100 may simultaneously expose a bonding area of a conductive pillar and bond a first wire to an exposed area of an adjacent conductive pillar.
- tool 120 has exposed bonding area 32 A of pillar 30 A.
- Device 100 then moves in the direction of the arrow to position head 110 over area 32 A.
- Device 100 may subsequently move downward to bond wire 50 to area 32 A and to expose a bonding area of pillar 30 B.
- a second wire is bonded to the conductive element at 65 .
- the second wire may be bonded using any of the above-described techniques or any other suitable techniques.
- the second wire may be intended to carry power or ground signals to the conductive element. In some embodiments, more than one wire is bonded to a given conductive element as shown in FIG. 4 .
- FIG. 11 is a side view of apparatus 200 fabricated according to some embodiments of process 60 .
- Apparatus 200 is substantially identical to apparatus 10 but for oxide-resistant layer 232 fabricated thereon.
- FIGS. 12 through 14 are top views of various apparatuses exhibiting various layouts and bonding patterns according to some embodiments. Each of FIGS. 12 through 14 omit an oxide-resistant layer for clarity, but it should be noted that each apparatus illustrated therein may include an oxide-resistant layer deposited thereon.
- Wires bonded to peripheral pillars 330 of apparatus 300 are to carry I/O signals, while wires bonded to conductive elements 340 carry power and ground signals.
- the dashed lines represent wires carrying ground signals and the solid lines connected to conductive elements 340 represent wires carrying power signals. As shown, some wires are merely used to directly connect two conductive elements 340 . Such wires may reduce a voltage drop exhibited by apparatus 300 .
- Apparatuses 400 and 500 of FIGS. 13 and 14 also includes wires bonded to peripheral pillars 430 / 530 to carry I/O signals, and wires bonded to conductive elements 440 / 540 carry power and ground signals.
- the dashed lines represent wires carrying ground signals and the solid lines connected to conductive elements 440 / 540 represent wires carrying power signals.
- the layout of conductive elements 540 of apparatus 500 in particular may be used to reduce electromagnetic interference and/or to provide shielding.
- FIG. 15 is a cross-sectional side view of system 600 according to some embodiments.
- System 600 may comprise components of a server platform.
- System 600 includes apparatus 10 as described above, memory 610 and motherboard 620 .
- Apparatus 10 may comprise a microprocessor.
- Motherboard 620 may electrically couple memory 610 to apparatus 10 . More particularly, motherboard 620 may comprise a memory bus (not shown) that is electrically coupled to solder balls 630 of apparatus 10 and to memory 610 .
- Memory 610 may comprise any type of memory for storing data, such as a Single Data Rate Random Access Memory, a Double Data Rate Random Access Memory, or a Programmable Read Only Memory.
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
A system may include an integrated circuit die defining a plurality of inner apertures, and a conductive element disposed on two or more of the plurality of inner apertures and electrically connected to an electrical conductor through the two or more inner apertures. In some embodiments, the integrated circuit die defines a plurality of peripheral apertures and also includes a conductive pillar disposed on one of the plurality of peripheral apertures and electrically connected to a second electrical conductor through the peripheral aperture.
Description
- Wirebond packages and flip-chip packages are commonly used to package one or more integrated circuit (IC) die. According to both types of packages, a lower surface of an IC die is coupled to an upper surface of an IC package substrate. A wirebond package includes wires to connect electrical contacts of a rear surface of the IC die to electrical contacts of the IC package substrate. In contrast, a flip-chip package includes electrical interconnects (e.g., solder bumps) to connect electrical contacts of a front surface of an inverted IC die to electrical contacts of the IC package substrate.
- A wirebond package is typically less expensive than an equivalent flip-chip package. However, a wirebond package may not be suitable for some applications. An IC die used in a wirebond package requires a peripheral I/O ring that includes the above-mentioned electrical contacts. Accordingly, such an IC die will be larger than would be required if the IC die were intended for a flip-chip package. A wirebond package also delivers power to the periphery of an IC die. Such power delivery is less uniform than the power delivery of a flip-chip package, in which power is delivered more directly to a core of the IC die.
- In may be desirable to selectively package an IC die in a wirebond package or a flip-chip package. Due at least to the above-described differences in power delivery and I/O routing, the design and fabrication of an IC die differs substantially depending on whether the IC die will be packaged in a wirebond package or a flip-chip package.
-
FIG. 1 is a top view of an apparatus according to some embodiments. -
FIG. 2 is a cross-sectional side view of an apparatus according to some embodiments. -
FIG. 3 is a close-up cross-sectional side view of a conductive pillar of an apparatus according to some embodiments. -
FIG. 4 is a close-up cross-sectional side view of a conductive element of an apparatus according to some embodiments. -
FIG. 5 is a diagram of a process to fabricate an apparatus according to some embodiments. -
FIG. 6 is a top view of an IC die,according to some embodiments. -
FIG. 7 is a top view of an IC die and a micropassivation layer according to some embodiments. -
FIGS. 8A through 8C are cross-sectional side views of an apparatus to illustrate wirebonding according to some embodiments. -
FIG. 9 is a cross-sectional side view of an apparatus to illustrate wirebonding according to some embodiments. -
FIG. 10 is a cross-sectional side view of an apparatus to illustrate wirebonding according to some embodiments. -
FIG. 11 is a side view of an apparatus according to some embodiments. -
FIG. 12 is a top view of an IC die including conductive elements, conductive pillars and bonded wires according to some embodiments. -
FIG. 13 is a top view of an IC die including conductive elements, conductive pillars and bonded wires according to some embodiments. -
FIG. 14 is a top view of an IC die including conductive elements, conductive pillars and bonded wires according to some embodiments. -
FIG. 15 is a diagram of a system according to some embodiments. -
FIG. 1 is a cross-sectional side view ofapparatus 10 according to some embodiments.Apparatus 10 includes IC die 20,conductive pillars 30 andconductive elements 40 disposed thereon, andwires 50 bonded to oneconductive pillars 30 andconductive elements 40.Apparatus 10 may provide any electronic functionality that is or becomes known. - According to some embodiments, IC die 20 includes integrated electrical devices for providing microprocessor functionality and may be fabricated using any suitable materials and fabrication techniques. The electrical devices of IC die 20 may be electrically connected to
conductive pillars 30 and/orconductive elements 40. The electrical devices may therefore also be connected towires 50 viapillars 30 andelements 40.Wires 50 connected toconductive pillars 30 carry I/O signals andwires 50 connected toconductive elements 40 carry power or ground signals according to some embodiments. - In some embodiments, IC die 20 defines a plurality of inner apertures, and at least one of
conductive elements 40 is disposed on two or more of the plurality of inner apertures and is electrically connected to an electrical conductor through the two or more inner apertures. IC die 20 may also define a plurality of peripheral apertures, with one ofconductive pillars 30 being disposed on one of the plurality of peripheral apertures and electrically connected to a second electrical conductor through the peripheral aperture. -
FIG. 2 is a cross-sectional view ofapparatus 10 to further describe a. configuration thereof according to some embodiments.FIG. 2 shows IC die 20 coupled toIC package substrate 60.IC package substrate 60 may include a base dielectric layer with conductive fabricated thereon and layers separated by additional dielectric layers. The dielectric layers may be composed of any suitable material, including but not limited to bismaleimide triazine (BT) and FR4 in some embodiments. The conductive layers comprise reference planes for supplying reference voltages to electrical components that are connected toIC package substrate 60, or routing layers including conductive traces for carrying electrical signals between such electrical components.IC package substrate 60 includescontacts 62 to electrically connectwires 50 to the conductive layers. -
FIG. 2 also illustrates power delivery grids.Power delivery grids 70 are intended to deliver power and ground signals to electrical devices of IC die 20.Power delivery grids 70 may be suitable for use in a flip-chip arrangement in addition to the illustrated wirebond arrangement.Grids 70 are composed of 1 μm thick copper according to some embodiments. - As shown, at least one of
conductive elements 40 may be coupled to a central portion ofgrids 70.Conductive elements 40 may therefore provide delivery of power to a core of IC die 20 via a connectedwire 50. Such an arrangement may exhibit a voltage drop that is smaller than a voltage drop exhibited by conventional arrangements in which power is delivered to the periphery ofIC die 20 andgrids 70. In this regard,conductive elements 40 may comprise copper having a thickness of 60 μm. - Two
wires 50 are connected to each of illustratedpillars 30. These two wires are asymmetric according to some embodiments. Connecting two asymmetric wires to apillar 30 may reduce a voltage drop betweenIC package substrate 60 and thepillar 30 in comparison to single-wire arrangements, and may also reduce crosstalk between the two wires. -
FIG. 3 is a close-up cross-sectional side view ofapparatus 10 according to some embodiments.Conductive pillar 30 is partially covered by oxide-resistant layer 32, andwire 50 is bonded to bondingarea 34 ofpillar 30 that is not covered bylayer 32.Conductive pillar 30 may comprise copper or any other conductive wire-bondable material, and oxide-resistant layer may comprise polyimide, silicon oxide, silicon nitride, and/or any other suitable material for preventing oxide growth onpillar 30. According to some embodiments,layer 32 comprises copper oxide or any other native oxide of the material of whichpillar 30 is composed. As will be described below,layer 32 may retard growth of oxides onbonding area 34 ofpillar 30 prior to bonding ofwire 50 thereon. In some embodiments,conductive pillar 30 is ˜50 μm in height andlayer 32 is ˜50 nm thick. - IC die 20 includes
conductor 21 andconductive traces 22. IC die 20 may also include vias, electrical devices, and conductive planes.Conductor 21 is disposed belowperipheral aperture 23. As shown inFIG. 1 ,peripheral aperture 23 andconductive pillar 30 are located on a periphery of IC die 20.Peripheral aperture 23 is defined by IC die 20 and is surrounded bypassivation 24.Passivation 24 may comprise an electrical insulator (e.g., silicon nitride) and may also be compliant in some embodiments. According to some embodiments,passivation 24 is circular and defines an opening aboveaperture 23. -
Conductive pillar 30 is electrically connected toconductor 21 throughaperture 23. Accordingly,wire 50 is electrically connected toconductor 21. According to some embodiments, a conductive adhesion layer is deposited onconductor 23 prior to fabrication ofpillar 30 thereon. The adhesion layer may comprise sputtered tin/copper. -
FIG. 4 illustrates a close-up cross-sectional side view of aconductive element 40 ofapparatus 10 according to some embodiments.Conductive element 40 is disposed on twoinner apertures 25 defined by IC die 20.Inner apertures 25 are disposed aboveconductors 26 and surrounded by insulatingpassivation 27. As shown inFIG. 1 ,inner apertures 25 may be defined within an interior area of a surface of IC die 20. -
Conductive element 40 is partially covered by oxide-resistant layer 32, andwires 50 are bonded toareas 44 ofelement 40 that are not covered bylayer 32. As described with respect toconductive pillar 30,element 40 may comprise copper or any other conductive wire-bondable material, andlayer 32 may comprise any suitable oxide-resistant layer for retarding growth of oxides onbonding areas 44.Conductive element 40 is ˜50 μm in height andlayer 32 is ˜50 nm thick according to some embodiments. -
Conductors 26 are disposed belowinner apertures 25 and are electrically connected toconductive element 40 throughapertures 25.Conductors 26 may or may not be connected to one another within IC die 20. In some embodiments,conductors 26 carry power or ground signals betweenwires 50 andpower delivery grid 70. In this regard, one or all ofconductors 26 may be connected to a core portion ofgrid 70. Such an arrangement may reduce a voltage drop betweenwires 50 and a core ofIC 20 in comparison to conventional systems. -
FIG. 5 is a diagram ofprocess 60 to fabricate an apparatus according to some embodiments.Process 60 may be executed by one or more devices, and all or a part ofprocess 60 may be executed manually.Process 60 may be executed by an entity different from an entity that assembles an IC package from an IC die and an IC package substrate. - Initially, at 61, a conductive pillar is fabricated on a peripheral aperture of an IC die. Next, a conductive element is fabricated on two or more inner apertures of the IC die at 62. As described with respect to
FIGS. 3 and 4 , the peripheral aperture may be disposed above a conductor to carry I/O signals within the IC die, and the inner apertures may be disposed above conductors to carry power or ground signals to a core of the IC die. - The conductive pillar and the conductive element may be fabricated using any suitable techniques that are or become known. According to some embodiments, the conductive pillar and the conductive element are fabricated simultaneously using a copper electrodeposition process.
FIG. 6 is a top view of IC die 20 after some embodiments of 62. The illustrated pattern ofconductive elements 40 andconductive pillars 30 may be achieved using photolithographic masking techniques. - An oxide-resistant layer is deposited on the conductive pillar and the conductive element at 63. In some embodiments, the oxide-resistant layer is deposited using chemical vapor deposition and may comprise any suitable components. The layer may be deposited shortly after the elements and pillars are formed to retard the development of copper oxides thereon. The oxide-resistant layer may comprise a native oxide of the conductive pillar, in which case the layer may be “grown” at 63.
FIG. 7 illustrateslayer 32 disposed on IC die 20,pillars 30 andelements 40 according to some embodiments. - A first wire is bonded to the conductive pillar at 64. Bonding the first wire comprises establishing an electrical connection between the first wire and the conductive pillar.
FIGS. 8A through 8C illustrate 64 according to some embodiments.FIG. 8A showsbonding head 70 pressing an end ofwire 50 into oxide-resistant layer 32. As shown, layer andpillar 30 deform slightly in response to the pressure.Pillar 30 may be annealed afterpillar 30 is fabricated to facilitate this deformation. -
Bonding head 70 also or alternatively vibrates at or near a resonant frequency oflayer 32 to allowwire 50 to penetrate andfragment layer 32 as shown inFIG. 8B . The resulting fragments may be dispersed uniformly at the interfacial bonding intermetallic (i.e., gold and copper) layer so as not to substantially affect the integrity or electrical resistance of the wirebond.FIG. 8C shows a resultant configuration. -
FIG. 9 illustrates another embodiment of 64. A portion oflayer 32 is removed by mechanical micro-mill 80, which may comprise a high-speed diamond blade with Z-axis control. Micro-mill 80 may also remove a portion ofpillar 30 as shown to substantially remove any oxides that may have formed thereon. The first wire may then be bonded toarea 34 exposed by micro-mill 80. -
FIG. 10 illustrates yet another embodiment of 64.Device 100 comprisesbonding head 110 andpre-clean tool 120 coupled totransducer block 130.Bonding head 110 andpre-clean tool 120 may each operate based on energy supplied bytransducer block 130.Device 100 may simultaneously expose a bonding area of a conductive pillar and bond a first wire to an exposed area of an adjacent conductive pillar. - As shown,
tool 120 has exposedbonding area 32A ofpillar 30A.Device 100 then moves in the direction of the arrow to positionhead 110 overarea 32A.Device 100 may subsequently move downward tobond wire 50 toarea 32A and to expose a bonding area ofpillar 30B. - Returning to process 60, a second wire is bonded to the conductive element at 65. The second wire may be bonded using any of the above-described techniques or any other suitable techniques. The second wire may be intended to carry power or ground signals to the conductive element. In some embodiments, more than one wire is bonded to a given conductive element as shown in
FIG. 4 . -
FIG. 11 is a side view ofapparatus 200 fabricated according to some embodiments ofprocess 60.Apparatus 200 is substantially identical toapparatus 10 but for oxide-resistant layer 232 fabricated thereon. - Many different layouts of conductive elements and/or copper pillars may be used in conjunction with some embodiments. Additionally or alternatively, embodiments may utilize many different wire bonding patterns.
FIGS. 12 through 14 are top views of various apparatuses exhibiting various layouts and bonding patterns according to some embodiments. Each ofFIGS. 12 through 14 omit an oxide-resistant layer for clarity, but it should be noted that each apparatus illustrated therein may include an oxide-resistant layer deposited thereon. - Wires bonded to
peripheral pillars 330 ofapparatus 300 are to carry I/O signals, while wires bonded toconductive elements 340 carry power and ground signals. In the illustrated embodiment, the dashed lines represent wires carrying ground signals and the solid lines connected toconductive elements 340 represent wires carrying power signals. As shown, some wires are merely used to directly connect twoconductive elements 340. Such wires may reduce a voltage drop exhibited byapparatus 300. -
Apparatuses 400 and 500 ofFIGS. 13 and 14 also includes wires bonded toperipheral pillars 430/530 to carry I/O signals, and wires bonded toconductive elements 440/540 carry power and ground signals. Again, the dashed lines represent wires carrying ground signals and the solid lines connected toconductive elements 440/540 represent wires carrying power signals. The layout ofconductive elements 540 of apparatus 500 in particular may be used to reduce electromagnetic interference and/or to provide shielding. -
FIG. 15 is a cross-sectional side view ofsystem 600 according to some embodiments.System 600 may comprise components of a server platform.System 600 includesapparatus 10 as described above,memory 610 andmotherboard 620.Apparatus 10 may comprise a microprocessor. -
Motherboard 620 may electrically couplememory 610 toapparatus 10. More particularly,motherboard 620 may comprise a memory bus (not shown) that is electrically coupled tosolder balls 630 ofapparatus 10 and tomemory 610.Memory 610 may comprise any type of memory for storing data, such as a Single Data Rate Random Access Memory, a Double Data Rate Random Access Memory, or a Programmable Read Only Memory. - The several embodiments described herein are solely for the purpose of illustration. The various features described herein need not all be used together, and any one or more of those features may be incorporated in a single embodiment. Some embodiments may include any currently or hereafter-known versions of the elements described herein. Therefore, persons skilled in the art will recognize from this description that other embodiments may be practiced with various modifications and alterations.
Claims (27)
1. An apparatus comprising:
an integrated circuit die defining a plurality of inner apertures; and
a conductive element disposed on two or more of the plurality of inner apertures and electrically connected to an electrical conductor through the two or more inner apertures.
2. An apparatus according to claim 1 , wherein the integrated circuit die defines a plurality of peripheral apertures, and further comprising:
a conductive pillar disposed on one of the plurality of peripheral apertures and electrically connected to a second electrical conductor through the peripheral aperture.
3. An apparatus according to claim 2 , further comprising:
a first wire bonded to the conductive pillar;
a second wire bonded to the conductive element; and
an integrated circuit package coupled to the integrated circuit die, the integrated circuit package comprising:
a first contact bonded to the first wire; and
a second contact bonded to the second wire.
4. An apparatus according to claim 3 , further comprising:
a third wire bonded to the conductive element and to the second contact,
wherein the second wire and the third wire are asymmetric.
5. An apparatus according to claim 3 , further comprising:
an oxide-resistant layer on at least a portion of the conductive element and on at least a portion of the conductive pillar.
6. An apparatus according to claim 1 , further comprising:
an oxide-resistant layer on at least a portion of the conductive element.
7. An apparatus according to claim 1 , wherein the electrical conductor is to carry a power signal.
8. An apparatus according to claim 7 , further comprising:
a second conductive element disposed on a second two or more of the plurality of inner apertures and electrically connected to a second electrical conductor through the second two or more inner apertures,
wherein the second electrical conductor is to carry a ground signal.
9. An apparatus according to claim 7 , further comprising:
a second conductive element disposed on a second two or more of the plurality of inner apertures and electrically connected to a second electrical conductor through the second two or more inner apertures,
wherein the second electrical conductor is to carry a power signal.
10. An apparatus according to claim 1 , further comprising:
a power delivery grid within the integrated circuit die,
wherein the electrical conductor is electrically connected to a core portion of the power delivery grid.
11. A method comprising:
fabricating a conductive element on two or more inner apertures of an integrated circuit die,
wherein the conductive element is electrically connected to an electrical conductor through the two or more inner apertures.
12. A method according to claim 11 , further comprising:
fabricating a conductive pillar on one of a plurality of peripheral apertures of the integrated circuit die,
wherein the conductive pillar is electrically connected to a second electrical conductor through the peripheral aperture.
13. A method according to claim 12 , further comprising:
bonding a first wire to the conductive pillar;
bonding a second wire to the conductive element; and
bonding the first wire to a first contact of an integrated circuit package; and
bonding the second wire to a second contact of the integrated circuit package.
14. A method according to claim 13 , further comprising:
bonding a third wire to the conductive element and to the second contact,
wherein the second wire and the third wire are asymmetric.
15. A method according to claim 12 , further comprising:
depositing an oxide-resistant layer on at least a portion of the conductive element and on at least a portion of the conductive pillar.
16. A method according to claim 11 , further comprising:
depositing an oxide-resistant layer on at least a portion of the conductive element.
17. A method according to claim 11 , wherein the electrical conductor is to carry a power signal.
18. A method according to claim 17 , further comprising:
fabricating a second conductive element disposed on a second two or more of the plurality of inner apertures and electrically connected to a second electrical conductor through the second two or more inner apertures,
wherein the second electrical conductor is to carry a ground signal.
19. A method according to claim 17 , further comprising:
fabricating a second conductive element disposed on a second two or more of the plurality of inner apertures and electrically connected to a second electrical conductor through the second two or more inner apertures,
wherein the second electrical conductor is to carry a power signal.
20. A method according to claim 11 , wherein the electrical conductor is electrically connected to a core portion of a power delivery grid within the integrated circuit die.
21. A system comprising:
a microprocessor comprising:
an integrated circuit die defining a plurality of inner apertures; and
a conductive element disposed on two or more of the plurality of inner apertures and electrically connected to an electrical conductor through the two or more inner apertures; and
a double data rate memory electrically coupled to the microprocessor.
22. A system according to claim 21 , wherein the integrated circuit die defines a plurality of peripheral apertures and further comprises:
a conductive pillar disposed on one of the plurality of peripheral apertures and electrically connected to a second electrical conductor through the peripheral aperture.
23. A system according to claim 22 , the microprocessor further comprising:
a first wire bonded to the conductive pillar;
a second wire bonded to the conductive element; and
an integrated circuit package coupled to the integrated circuit die, the integrated circuit package comprising:
a first contact bonded to the first wire; and
a second contact bonded to the second wire.
24. A system according to claim 23 , the microprocessor further comprising:
a third wire bonded to the conductive element and to the second contact,
wherein the second wire and the third wire are asymmetric.
25. A system according to claim 22 , the microprocessor further comprising:
an oxide-resistant layer on at least a portion of the conductive element and on at least a portion of the conductive pillar.
26. A system according to claim 21 , the microprocessor further comprising:
a second conductive element disposed on a second two or more of the plurality of inner apertures and electrically connected to a second electrical conductor through the second two or more inner apertures,
wherein the electrical conductor and the second electrical conductor are to carry a power signal.
27. A system according to claim 21 , the microprocessor further comprising:
a power delivery grid within the integrated circuit die,
wherein the electrical conductor is electrically connected to a core portion of the power delivery grid.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/320,282 US20070145607A1 (en) | 2005-12-28 | 2005-12-28 | System to wirebond power signals to flip-chip core |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/320,282 US20070145607A1 (en) | 2005-12-28 | 2005-12-28 | System to wirebond power signals to flip-chip core |
Publications (1)
Publication Number | Publication Date |
---|---|
US20070145607A1 true US20070145607A1 (en) | 2007-06-28 |
Family
ID=38192678
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/320,282 Abandoned US20070145607A1 (en) | 2005-12-28 | 2005-12-28 | System to wirebond power signals to flip-chip core |
Country Status (1)
Country | Link |
---|---|
US (1) | US20070145607A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090085201A1 (en) * | 2007-09-28 | 2009-04-02 | Mathew Ranjan J | Direct device attachment on dual-mode wirebond die |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010011768A1 (en) * | 1997-09-12 | 2001-08-09 | Youichi Kohara | Semiconductor integrated circuit device and package structure for the same |
US20010017411A1 (en) * | 2000-02-25 | 2001-08-30 | Makoto Terui | Semiconductor chip and semiconductor device having the chip |
US6523150B1 (en) * | 2001-09-28 | 2003-02-18 | International Business Machines Corporation | Method of designing a voltage partitioned wirebond package |
US6661101B2 (en) * | 2002-02-14 | 2003-12-09 | Rohm Co., Ltd. | Semiconductor device |
US6707164B2 (en) * | 2001-10-19 | 2004-03-16 | Acer Laboratories Inc. | Package of semiconductor chip with array-type bonding pads |
US6770963B1 (en) * | 2001-01-04 | 2004-08-03 | Broadcom Corporation | Multi-power ring chip scale package for system level integration |
US6791127B2 (en) * | 2001-08-10 | 2004-09-14 | Fujitsu Limited | Semiconductor device having a condenser chip for reducing a noise |
US6903617B2 (en) * | 2000-05-25 | 2005-06-07 | Silicon Laboratories Inc. | Method and apparatus for synthesizing high-frequency signals for wireless communications |
US6921981B2 (en) * | 2002-01-10 | 2005-07-26 | Advanced Semiconductor Engineering, Inc. | Ball grid array package |
US6927156B2 (en) * | 2003-06-18 | 2005-08-09 | Intel Corporation | Apparatus and method extending flip-chip pad structures for wirebonding on low-k dielectric silicon |
US7129572B2 (en) * | 2004-08-18 | 2006-10-31 | Chung-Cheng Wang | Submember mounted on a chip of electrical device for electrical connection |
US7271485B1 (en) * | 2006-09-11 | 2007-09-18 | Agere Systems Inc. | Systems and methods for distributing I/O in a semiconductor device |
US7429703B2 (en) * | 2003-11-26 | 2008-09-30 | Agere Systems Inc. | Methods and apparatus for integrated circuit device power distribution via internal wire bonds |
-
2005
- 2005-12-28 US US11/320,282 patent/US20070145607A1/en not_active Abandoned
Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010011768A1 (en) * | 1997-09-12 | 2001-08-09 | Youichi Kohara | Semiconductor integrated circuit device and package structure for the same |
US20010017411A1 (en) * | 2000-02-25 | 2001-08-30 | Makoto Terui | Semiconductor chip and semiconductor device having the chip |
US6534879B2 (en) * | 2000-02-25 | 2003-03-18 | Oki Electric Industry Co., Ltd. | Semiconductor chip and semiconductor device having the chip |
US6903617B2 (en) * | 2000-05-25 | 2005-06-07 | Silicon Laboratories Inc. | Method and apparatus for synthesizing high-frequency signals for wireless communications |
US6770963B1 (en) * | 2001-01-04 | 2004-08-03 | Broadcom Corporation | Multi-power ring chip scale package for system level integration |
US7129574B2 (en) * | 2001-01-04 | 2006-10-31 | Broadcom Corporation | Multi-power ring chip scale package for system level integration |
US6791127B2 (en) * | 2001-08-10 | 2004-09-14 | Fujitsu Limited | Semiconductor device having a condenser chip for reducing a noise |
US6523150B1 (en) * | 2001-09-28 | 2003-02-18 | International Business Machines Corporation | Method of designing a voltage partitioned wirebond package |
US6707164B2 (en) * | 2001-10-19 | 2004-03-16 | Acer Laboratories Inc. | Package of semiconductor chip with array-type bonding pads |
US6921981B2 (en) * | 2002-01-10 | 2005-07-26 | Advanced Semiconductor Engineering, Inc. | Ball grid array package |
US6661101B2 (en) * | 2002-02-14 | 2003-12-09 | Rohm Co., Ltd. | Semiconductor device |
US6927156B2 (en) * | 2003-06-18 | 2005-08-09 | Intel Corporation | Apparatus and method extending flip-chip pad structures for wirebonding on low-k dielectric silicon |
US7429703B2 (en) * | 2003-11-26 | 2008-09-30 | Agere Systems Inc. | Methods and apparatus for integrated circuit device power distribution via internal wire bonds |
US7129572B2 (en) * | 2004-08-18 | 2006-10-31 | Chung-Cheng Wang | Submember mounted on a chip of electrical device for electrical connection |
US7271485B1 (en) * | 2006-09-11 | 2007-09-18 | Agere Systems Inc. | Systems and methods for distributing I/O in a semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090085201A1 (en) * | 2007-09-28 | 2009-04-02 | Mathew Ranjan J | Direct device attachment on dual-mode wirebond die |
US7880310B2 (en) * | 2007-09-28 | 2011-02-01 | Intel Corporation | Direct device attachment on dual-mode wirebond die |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6469260B2 (en) | Wiring boards, semiconductor devices and their production processes | |
US6316838B1 (en) | Semiconductor device | |
US7338837B2 (en) | Semiconductor packages for enhanced number of terminals, speed and power performance | |
TWI241700B (en) | Packaging assembly with integrated circuits redistribution routing semiconductor die and method for fabrication | |
JP5651608B2 (en) | Microelectronic assembly having impedance controlled wire bonds and conductive reference components | |
US6670221B2 (en) | Semiconductor device having a built-in contact-type sensor and manufacturing method thereof | |
US20160079214A1 (en) | Bva interposer | |
US9030031B2 (en) | Microelectronic assembly with impedance controlled wirebond and reference wirebond | |
JP2017038075A (en) | Stackable molded ultra small electronic package including area array unit connector | |
JP2002164437A (en) | Integrated power circuit with dispersed bonding and current distribution and its method | |
KR20020044590A (en) | Metal redistribution layer having solderable pads and wire bondable pads | |
CN102468264A (en) | Bump structure and semiconductor package having the bump structure | |
JPH09330934A (en) | Semiconductor device and its manufacture | |
US20070023886A1 (en) | Method for producing a chip arrangement, a chip arrangement and a multichip device | |
US20020070446A1 (en) | Semiconductor device and method for the production thereof | |
US20040124545A1 (en) | High density integrated circuits and the method of packaging the same | |
US5863812A (en) | Process for manufacturing a multi layer bumped semiconductor device | |
US7939379B2 (en) | Hybrid carrier and a method for making the same | |
JP2005347488A (en) | Semiconductor apparatus | |
US20020195721A1 (en) | Cavity down ball grid array packaging structure | |
US20070145607A1 (en) | System to wirebond power signals to flip-chip core | |
US7091613B1 (en) | Elongated bonding pad for wire bonding and sort probing | |
US20050253245A1 (en) | Package design and method for electrically connecting die to package | |
JP3174238B2 (en) | Semiconductor device and method of manufacturing the same | |
US11705421B2 (en) | Apparatus including solder-core connectors and methods of manufacturing the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: INTEL CORPORATION, CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MATTHEW, RANJAN J.;REEL/FRAME:017436/0203 Effective date: 20051221 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |