JP2002198490A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JP2002198490A
JP2002198490A JP2000396081A JP2000396081A JP2002198490A JP 2002198490 A JP2002198490 A JP 2002198490A JP 2000396081 A JP2000396081 A JP 2000396081A JP 2000396081 A JP2000396081 A JP 2000396081A JP 2002198490 A JP2002198490 A JP 2002198490A
Authority
JP
Japan
Prior art keywords
electromagnetic wave
wave shielding
shielding layer
spiral inductor
spiral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000396081A
Other languages
English (en)
Japanese (ja)
Inventor
Yoichiro Niitsu
陽一郎 新津
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000396081A priority Critical patent/JP2002198490A/ja
Priority to KR1020010083985A priority patent/KR20020052978A/ko
Priority to CN01144007A priority patent/CN1361550A/zh
Priority to US10/036,314 priority patent/US20020158306A1/en
Publication of JP2002198490A publication Critical patent/JP2002198490A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/10—Inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
JP2000396081A 2000-12-26 2000-12-26 半導体装置 Pending JP2002198490A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000396081A JP2002198490A (ja) 2000-12-26 2000-12-26 半導体装置
KR1020010083985A KR20020052978A (ko) 2000-12-26 2001-12-24 반도체 장치
CN01144007A CN1361550A (zh) 2000-12-26 2001-12-26 半导体装置
US10/036,314 US20020158306A1 (en) 2000-12-26 2001-12-26 Semiconductor device with a spiral inductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000396081A JP2002198490A (ja) 2000-12-26 2000-12-26 半導体装置

Publications (1)

Publication Number Publication Date
JP2002198490A true JP2002198490A (ja) 2002-07-12

Family

ID=18861439

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000396081A Pending JP2002198490A (ja) 2000-12-26 2000-12-26 半導体装置

Country Status (4)

Country Link
US (1) US20020158306A1 (zh)
JP (1) JP2002198490A (zh)
KR (1) KR20020052978A (zh)
CN (1) CN1361550A (zh)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005340731A (ja) * 2004-05-31 2005-12-08 Nec Corp インダクタ
JP2008193059A (ja) * 2007-02-07 2008-08-21 Ind Technol Res Inst インダクタ装置
KR100871347B1 (ko) * 2007-06-22 2008-12-01 삼성전기주식회사 전자기 밴드갭 구조물 및 인쇄회로기판
KR100871346B1 (ko) * 2007-06-22 2008-12-01 삼성전기주식회사 전자기 밴드갭 구조물 및 인쇄회로기판
US7545025B2 (en) 2007-03-01 2009-06-09 Nec Electronics Corporation Semiconductor device
JP2009188343A (ja) * 2008-02-08 2009-08-20 Nec Corp インダクタ用シールドおよびシールド付きインダクタ
KR100951695B1 (ko) 2007-12-24 2010-04-07 (주)페타리 아이솔레이터 및 그 제조 방법
JP2011199225A (ja) * 2010-03-24 2011-10-06 Renesas Electronics Corp 半導体装置および半導体装置の製造方法
JP2013098539A (ja) * 2011-10-27 2013-05-20 Samsung Electro-Mechanics Co Ltd インダクタ
JP2013138045A (ja) * 2011-12-28 2013-07-11 Hitachi Metals Ltd 磁性シート、伝送コイル部品及び非接触充電装置
JP2014060332A (ja) * 2012-09-19 2014-04-03 Renesas Electronics Corp 半導体装置
JP2014086593A (ja) * 2012-10-24 2014-05-12 Renesas Electronics Corp 半導体装置
WO2017122416A1 (ja) * 2016-01-14 2017-07-20 ソニー株式会社 半導体装置
WO2018051546A1 (ja) * 2016-09-13 2018-03-22 マクセル株式会社 電力伝送装置
JP2021019184A (ja) * 2019-07-17 2021-02-15 サムソン エレクトロ−メカニックス カンパニーリミテッド． コイル部品
US20210358684A1 (en) * 2020-05-18 2021-11-18 Samsung Electro-Mechanics Co., Ltd. Coil component

Families Citing this family (38)

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US20030234438A1 (en) * 2002-06-24 2003-12-25 Motorola, Inc. Integrated circuit structure for mixed-signal RF applications and circuits
US7135951B1 (en) * 2003-07-15 2006-11-14 Altera Corporation Integrated circuit inductors
US6936764B2 (en) * 2003-08-12 2005-08-30 International Business Machines Corporation Three dimensional dynamically shielded high-Q BEOL metallization
JP2005079397A (ja) * 2003-09-01 2005-03-24 Matsushita Electric Ind Co Ltd 半導体装置
EP1553812A3 (fr) * 2003-12-11 2013-04-03 STMicroelectronics S.A. Puce à semiconducteur et circuit comprenant une inductance blindée
DE102004022139B4 (de) * 2004-05-05 2007-10-18 Atmel Germany Gmbh Verfahren zur Herstellung einer Spiralinduktivität auf einem Substrat und nach einem derartigen Verfahren hergestelltes Bauelement
CN100446249C (zh) * 2005-11-29 2008-12-24 上海华虹Nec电子有限公司 一种电感版图结构
CN100446250C (zh) * 2005-12-01 2008-12-24 上海华虹Nec电子有限公司 一种电感版图结构
JP4572343B2 (ja) * 2006-03-03 2010-11-04 セイコーエプソン株式会社 電子基板、半導体装置および電子機器
JP2008135589A (ja) * 2006-11-29 2008-06-12 Asuka Electron Kk 電力伝送用コイル
TWI348760B (en) * 2007-08-17 2011-09-11 Via Tech Inc Inductor structure
CN101442048B (zh) * 2007-11-23 2010-09-08 上海华虹Nec电子有限公司 射频cmos集成电感中的接地环结构
JP5324829B2 (ja) * 2008-06-05 2013-10-23 ルネサスエレクトロニクス株式会社 半導体装置
US9324700B2 (en) * 2008-09-05 2016-04-26 Stats Chippac, Ltd. Semiconductor device and method of forming shielding layer over integrated passive device using conductive channels
US20100193904A1 (en) * 2009-01-30 2010-08-05 Watt Jeffrey T Integrated circuit inductor with doped substrate
KR20120029433A (ko) 2009-05-20 2012-03-26 코닌클리케 필립스 일렉트로닉스 엔.브이. 초박형 차폐층을 갖는 유도 수신기 코일을 구비한 전자 장치 및 방법
JP5045727B2 (ja) * 2009-10-21 2012-10-10 ソニー株式会社 高周波モジュールおよび受信装置
CN102053408B (zh) * 2009-11-05 2013-04-10 太瀚科技股份有限公司 具有电磁感应回路的复合基板与显示器
US8159044B1 (en) 2009-11-20 2012-04-17 Altera Corporation Density transition zones for integrated circuits
JP5643580B2 (ja) 2009-11-27 2014-12-17 株式会社東芝 血流動態解析装置、血流動態解析プログラム、流体解析装置及び流体解析プログラム
CN102906830A (zh) * 2010-05-05 2013-01-30 马维尔国际贸易有限公司 磁屏蔽电感器结构
CN103168354B (zh) * 2010-09-17 2015-11-25 日本电信电话株式会社 电感器
US8466536B2 (en) 2010-10-14 2013-06-18 Advanced Micro Devices, Inc. Shield-modulated tunable inductor device
US9418783B2 (en) 2011-12-29 2016-08-16 Intel Corporation Inductor design with metal dummy features
CN103474415B (zh) * 2012-06-06 2016-08-31 中芯国际集成电路制造(上海)有限公司 电感及其形成方法
CN102927822A (zh) * 2012-11-05 2013-02-13 黄幼华 一种小型熔炉电磁感应排放阀
JP6286157B2 (ja) * 2013-09-05 2018-02-28 ルネサスエレクトロニクス株式会社 センサ装置
JP6294034B2 (ja) * 2013-09-05 2018-03-14 ルネサスエレクトロニクス株式会社 センサ装置
US9607942B2 (en) * 2013-10-18 2017-03-28 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device with patterned ground shielding
KR102203090B1 (ko) * 2013-12-20 2021-01-14 주식회사 솔루엠 변압기 및 어댑터
US9589719B2 (en) * 2014-03-31 2017-03-07 Washington State University Switchable patterned metal shield inductance structure for wideband integrated systems
US10554078B2 (en) 2015-04-24 2020-02-04 Intel Corporation Method and apparatus for coil integration for uniform wireless charging
CN106067370B (zh) * 2015-04-24 2019-05-10 英特尔公司 用于均匀无线充电的线圈集成的方法和装置
US11239025B2 (en) * 2015-10-23 2022-02-01 Realtek Semiconductor Corporation Inductive device having electromagnetic radiation shielding mechanism and manufacturing method of the same
US10269481B2 (en) 2016-05-27 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked coil for wireless charging structure on InFO package
TWI645428B (zh) * 2016-11-25 2018-12-21 瑞昱半導體股份有限公司 積體電感
JP7160012B2 (ja) * 2019-10-03 2022-10-25 株式会社デンソー 電子制御装置
KR20210144031A (ko) * 2020-05-21 2021-11-30 삼성전기주식회사 코일 부품

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4776752B2 (ja) * 2000-04-19 2011-09-21 ルネサスエレクトロニクス株式会社 半導体装置

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005340731A (ja) * 2004-05-31 2005-12-08 Nec Corp インダクタ
JP2008193059A (ja) * 2007-02-07 2008-08-21 Ind Technol Res Inst インダクタ装置
US8274352B2 (en) 2007-02-07 2012-09-25 Industrial Technology Research Institute Inductor devices
US7919836B2 (en) 2007-03-01 2011-04-05 Renesas Electronics Corporation Semiconductor device
US8575730B2 (en) 2007-03-01 2013-11-05 Renesas Electronics Corporation Semiconductor device
US7545025B2 (en) 2007-03-01 2009-06-09 Nec Electronics Corporation Semiconductor device
US8258605B2 (en) 2007-03-01 2012-09-04 Renesas Electronics Corporation Semiconductor device
KR100871346B1 (ko) * 2007-06-22 2008-12-01 삼성전기주식회사 전자기 밴드갭 구조물 및 인쇄회로기판
KR100871347B1 (ko) * 2007-06-22 2008-12-01 삼성전기주식회사 전자기 밴드갭 구조물 및 인쇄회로기판
KR100951695B1 (ko) 2007-12-24 2010-04-07 (주)페타리 아이솔레이터 및 그 제조 방법
JP2009188343A (ja) * 2008-02-08 2009-08-20 Nec Corp インダクタ用シールドおよびシールド付きインダクタ
JP2011199225A (ja) * 2010-03-24 2011-10-06 Renesas Electronics Corp 半導体装置および半導体装置の製造方法
US9042117B2 (en) 2010-03-24 2015-05-26 Renesas Electronics Corporation Semiconductor device
JP2013098539A (ja) * 2011-10-27 2013-05-20 Samsung Electro-Mechanics Co Ltd インダクタ
JP2013138045A (ja) * 2011-12-28 2013-07-11 Hitachi Metals Ltd 磁性シート、伝送コイル部品及び非接触充電装置
JP2014060332A (ja) * 2012-09-19 2014-04-03 Renesas Electronics Corp 半導体装置
JP2014086593A (ja) * 2012-10-24 2014-05-12 Renesas Electronics Corp 半導体装置
WO2017122416A1 (ja) * 2016-01-14 2017-07-20 ソニー株式会社 半導体装置
JPWO2017122416A1 (ja) * 2016-01-14 2018-11-01 ソニー株式会社 半導体装置
WO2018051546A1 (ja) * 2016-09-13 2018-03-22 マクセル株式会社 電力伝送装置
JP2018046626A (ja) * 2016-09-13 2018-03-22 マクセル株式会社 電力伝送装置
JP2021019184A (ja) * 2019-07-17 2021-02-15 サムソン エレクトロ−メカニックス カンパニーリミテッド． コイル部品
US11443894B2 (en) 2019-07-17 2022-09-13 Samsung Electro-Mechanics Co., Ltd. Coil component
US20210358684A1 (en) * 2020-05-18 2021-11-18 Samsung Electro-Mechanics Co., Ltd. Coil component
US11676759B2 (en) * 2020-05-18 2023-06-13 Samsung Electro-Mechanics Co., Ltd. Coil component

Also Published As

Publication number Publication date
CN1361550A (zh) 2002-07-31
KR20020052978A (ko) 2002-07-04
US20020158306A1 (en) 2002-10-31

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