JP2002198357A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2002198357A5 JP2002198357A5 JP2000397269A JP2000397269A JP2002198357A5 JP 2002198357 A5 JP2002198357 A5 JP 2002198357A5 JP 2000397269 A JP2000397269 A JP 2000397269A JP 2000397269 A JP2000397269 A JP 2000397269A JP 2002198357 A5 JP2002198357 A5 JP 2002198357A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- cleaning
- semiconductor manufacturing
- manufacturing apparatus
- inert gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 claims 21
- 239000007789 gas Substances 0.000 claims 19
- 238000004519 manufacturing process Methods 0.000 claims 16
- 239000004065 semiconductor Substances 0.000 claims 16
- 239000011261 inert gas Substances 0.000 claims 10
- 238000000034 method Methods 0.000 claims 6
- 229920001774 Perfluoroether Polymers 0.000 claims 3
- UJMWVICAENGCRF-UHFFFAOYSA-N oxygen difluoride Chemical compound FOF UJMWVICAENGCRF-UHFFFAOYSA-N 0.000 claims 3
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims 3
- 229910052786 argon Inorganic materials 0.000 claims 2
- 125000004432 carbon atom Chemical group C* 0.000 claims 2
- 150000002222 fluorine compounds Chemical class 0.000 claims 2
- -1 hydrofluorocarbon Chemical compound 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000000354 decomposition reaction Methods 0.000 claims 1
- 230000005284 excitation Effects 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- 229910052743 krypton Inorganic materials 0.000 claims 1
- 229910052754 neon Inorganic materials 0.000 claims 1
- 229910052724 xenon Inorganic materials 0.000 claims 1
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000397269A JP2002198357A (ja) | 2000-12-27 | 2000-12-27 | 半導体製造装置のクリーニングガス及びクリーニング方法 |
| CNB018020372A CN1214444C (zh) | 2000-07-18 | 2001-07-17 | 用于半导体生产设备的净化气 |
| US10/088,306 US20030056388A1 (en) | 2000-07-18 | 2001-07-17 | Cleaning gas for semiconductor production equipment |
| PCT/JP2001/006164 WO2002007194A2 (en) | 2000-07-18 | 2001-07-17 | Cleaning gas for semiconductor production equipment |
| TW090117438A TWI291201B (en) | 2000-07-18 | 2001-07-17 | Cleaning gas for semiconductor production equipment |
| AU2001271063A AU2001271063A1 (en) | 2000-07-18 | 2001-07-17 | Cleaning gas for semiconductor production equipment |
| KR10-2002-7003222A KR100485743B1 (ko) | 2000-07-18 | 2001-07-17 | 반도체 생산 설비용 세정 가스 |
| HK03104036.5A HK1051934B (en) | 2000-07-18 | 2001-07-17 | Cleaning gas for semiconductor production equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000397269A JP2002198357A (ja) | 2000-12-27 | 2000-12-27 | 半導体製造装置のクリーニングガス及びクリーニング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002198357A JP2002198357A (ja) | 2002-07-12 |
| JP2002198357A5 true JP2002198357A5 (https=) | 2004-08-05 |
Family
ID=18862413
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000397269A Pending JP2002198357A (ja) | 2000-07-18 | 2000-12-27 | 半導体製造装置のクリーニングガス及びクリーニング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002198357A (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7322368B2 (en) | 2001-08-30 | 2008-01-29 | Asahi Glass Co Ltd | Plasma cleaning gas and plasma cleaning method |
| KR102340870B1 (ko) * | 2016-03-16 | 2021-12-16 | 니폰 제온 가부시키가이샤 | 플라즈마 에칭 방법 |
| KR20230007949A (ko) * | 2021-07-06 | 2023-01-13 | 에이에스엠 아이피 홀딩 비.브이. | 세정 가스를 제공하기 위한 세정 가스 시스템을 갖는 화학 기상 증착 퍼니스 |
-
2000
- 2000-12-27 JP JP2000397269A patent/JP2002198357A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101435490B1 (ko) | 드라이 에칭제 및 드라이 에칭 방법 | |
| EP1320875B1 (en) | Gas compositions for cleaning the interiors of reactors as well as for etching films of silicon-containing compounds | |
| EP1138802A3 (en) | Fluorine process for cleaning semiconductor process chamber | |
| WO2013015033A1 (ja) | ドライエッチング剤 | |
| CN1871333A (zh) | 用于高效清洁/抛光半导体晶片的组合物和方法 | |
| JP2002500444A (ja) | フッ素化されたカルボニル化合物を用いるエッチング及びクリニングの方法 | |
| KR970008333A (ko) | 화학 증착(cvd) 장치로부터 잔류물을 세척하기 위한 방법 | |
| EP2511948A1 (en) | Dry etching agent and dry etching method using the same | |
| KR20160105407A (ko) | 챔버 세정 및 반도체 식각 기체 | |
| TWI291201B (en) | Cleaning gas for semiconductor production equipment | |
| JP2018141146A (ja) | ドライエッチング剤、ドライエッチング方法及び半導体装置の製造方法 | |
| TWI284929B (en) | Remote chamber methods for removing surface deposits | |
| JP2003178986A5 (https=) | ||
| JP2002198357A5 (https=) | ||
| US20050258137A1 (en) | Remote chamber methods for removing surface deposits | |
| JP2005142198A (ja) | クリーニングガス及びクリーニング方法 | |
| TW201002857A (en) | Method for cleaning plasma film formation apparatus | |
| JP6480417B2 (ja) | ヒドロフルオロオレフィンエッチングガス混合物 | |
| US20040231695A1 (en) | Cleaning gas for semiconductor production equipment and cleaning method using the gas | |
| KR20020032581A (ko) | 반도체 생산 설비용 세정 가스 | |
| JP2003178986A (ja) | 半導体製造装置のクリーニングガスおよびクリーニング方法 | |
| WO2012114611A1 (ja) | クリーニングガス及びそれを用いたリモートプラズマクリーニング方法 | |
| JP2002100618A (ja) | 半導体製造装置のクリーニングガス及びクリーニング方法 | |
| JP2002198357A (ja) | 半導体製造装置のクリーニングガス及びクリーニング方法 | |
| JP2008235562A (ja) | プラズマｃｖｄ成膜装置のクリーニング方法 |