JP2002184832A - Tilting draining device - Google Patents

Tilting draining device

Info

Publication number
JP2002184832A
JP2002184832A JP2000375978A JP2000375978A JP2002184832A JP 2002184832 A JP2002184832 A JP 2002184832A JP 2000375978 A JP2000375978 A JP 2000375978A JP 2000375978 A JP2000375978 A JP 2000375978A JP 2002184832 A JP2002184832 A JP 2002184832A
Authority
JP
Japan
Prior art keywords
substrate
liquid
processing
type
inclination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000375978A
Other languages
Japanese (ja)
Other versions
JP3579348B2 (en
Inventor
Kyoji Shimoda
亨志 下田
Hitoshi Tauchi
仁 田内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Precision Products Co Ltd
Original Assignee
Sumitomo Precision Products Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Precision Products Co Ltd filed Critical Sumitomo Precision Products Co Ltd
Priority to JP2000375978A priority Critical patent/JP3579348B2/en
Priority to CN 01804684 priority patent/CN1398428A/en
Priority to PCT/JP2001/010764 priority patent/WO2002049096A1/en
Priority to TW90130615A priority patent/TWI254341B/en
Publication of JP2002184832A publication Critical patent/JP2002184832A/en
Application granted granted Critical
Publication of JP3579348B2 publication Critical patent/JP3579348B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65GTRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • B65G49/067Sheet handling, means, e.g. manipulators, devices for turning or tilting sheet glass
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65GTRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G2249/00Aspects relating to conveying systems for the manufacture of fragile sheets
    • B65G2249/02Controlled or contamination-free environments or clean space conditions

Abstract

PROBLEM TO BE SOLVED: To efficiently eliminate a treating liquid from the upper part of a substrate without increasing the angle of inclination of the substrate even in the case where the viscosity of the treating liquid is high in a tilting draining device which eliminates the treating liquid from the upper part of the substrate by the inclination of the substrate. SOLUTION: In a tilting draining device, a drain promoting means 43 is provided on one side of a draining device main body 42 which slants a substrate 10 on a transfer roller 41 to the side of the transfer direction of the substrate 10. The means 43 has a multitude of contact members 43a arranged at prescribed intervals in the transfer direction of the substrate 10 and when the substrate is slanted to its side at a prescribed angle, a multitude of the members 43a are contacted with the treating liquid which stagnates on the side edge on the downstream side in the direction of the inclination of the substrate 10, whereby the treating liquid is eliminated from the side edge.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、液晶表示装置用ガ
ラス基板の製造等に使用される搬送式の基板処理装置に
係り、特に、その基板処理装置において、基板を傾斜さ
せることにより、基板の表面上から処理液を排除する傾
斜式液切り装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transport type substrate processing apparatus used for manufacturing a glass substrate for a liquid crystal display device, and more particularly to a substrate processing apparatus in which the substrate is inclined by tilting the substrate. The present invention relates to an inclined type liquid draining device for removing a processing liquid from the surface.

【0002】[0002]

【従来の技術】液晶表示装置に使用されるガラス基板
は、素材であるガラス基板の表面にエッチング、剥離等
の化学的処理を繰り返し施すことにより製造される。そ
の処理装置はドライ式とウェット式に大別され、ウェッ
ト式は更にバッチ式と枚葉式に分けられる。更に、枚葉
式は回転式とローラ搬送等による搬送式に細分される。
2. Description of the Related Art A glass substrate used in a liquid crystal display device is manufactured by repeatedly performing chemical treatments such as etching and peeling on the surface of a glass substrate as a material. The processing apparatus is roughly classified into a dry type and a wet type, and the wet type is further divided into a batch type and a single-wafer type. Further, the single wafer type is subdivided into a rotary type and a transport type by roller transport or the like.

【0003】これらの基板処理装置のうち、搬送式のも
のは、基板を水平方向へ搬送しながらその基板の表面に
処理液を供給する基本構成になっており、高効率なこと
からエッチング処理や剥離処理等に使用されている。
[0003] Of these substrate processing apparatuses, the transport type has a basic configuration in which a processing liquid is supplied to the surface of the substrate while transporting the substrate in the horizontal direction. It is used for peeling treatment and the like.

【0004】エッチング処理に使用される搬送式の基板
処理装置では、基板搬送ラインの上方にマトリックス状
に配置された多数のスプレーノズルからエッチング液を
噴射し、そのエッチング液中に基板を通過させることに
より、基板の表面全体にエッチング液を供給する。この
シャワー処理により、基板の表面が、マスキング材の塗
布された部分を除いて選択的にエッチングされる。
In a transfer type substrate processing apparatus used for an etching process, an etching solution is sprayed from a large number of spray nozzles arranged in a matrix above a substrate transfer line, and the substrate is passed through the etching solution. Thereby, the etching liquid is supplied to the entire surface of the substrate. By this shower treatment, the surface of the substrate is selectively etched except for the portion where the masking material is applied.

【0005】エッチング後、同様のスプレーノズルから
噴射される洗浄水により基板表面が洗浄されるが、エッ
チング処理の迅速な停止、初期洗浄での洗浄水の汚れを
抑え、その初期洗浄水の廃棄量を低減することをなどを
目的として、洗浄前に基板の表面上に残るエッチング液
が物理的に除去される。この液切り装置の一つとして、
基板を搬送途中に一時的に停止させ、側方へ傾斜させ
て、エッチング液を表面上から側方へ排除する傾斜式の
ものがある。剥離処理用の基板処理装置でも、同様に薬
液処理、液切り、水洗が行われる。
After etching, the surface of the substrate is washed with washing water sprayed from a similar spray nozzle, but the etching process is quickly stopped, contamination of the washing water in the initial washing is suppressed, and the amount of the initial washing water is discarded. The etchant remaining on the surface of the substrate before cleaning is physically removed for the purpose of, for example, reducing cleaning. As one of the draining devices,
There is a tilt type in which the substrate is temporarily stopped during the transfer and tilted sideways to remove the etchant from above the surface to the side. In a substrate processing apparatus for a stripping process, a chemical treatment, a drainage, and a water washing are similarly performed.

【0006】[0006]

【発明が解決しようとする課題】ところで、液晶表示装
置用ガラス基板では、基板の大型化と共に回路の高精細
化が進んでいる。その基板に使用される配線材料とし
て、以前はCrが多用されていたが、最近の高精細化に
伴ってより比抵抗値の小さいAl又はAl/Moへの転
換が図られている。このため、エッチング用の搬送式基
板処理装置でも、Al用エッチング液が使用され始めた
が、このエッチング液の使用に伴って以下のような問題
を生じることが判明した。
In the meantime, as for the glass substrate for a liquid crystal display device, the size of the substrate is increased and the circuit is becoming finer. In the past, Cr was often used as a wiring material used for the substrate, but with the recent increase in definition, conversion to Al or Al / Mo having a smaller specific resistance has been attempted. For this reason, even in a transport type substrate processing apparatus for etching, an etching solution for Al has begun to be used, but it has been found that the following problem arises with the use of this etching solution.

【0007】Al用エッチング液は、Cr用エッチング
と比べで高粘度である。このため、エッチング後に傾斜
式液切り装置で基板を傾斜させたときに、液切り性が悪
化する。即ち、Al用エッチング液の表面張力が大きい
ため、基板の傾斜によっても表面上のエッチング液が側
縁部に多量に溜まり、基板を水平姿勢に戻したときに、
そのエッチング液が再び表面上に広がるのである。
The etching solution for Al has a higher viscosity than the etching solution for Cr. Therefore, when the substrate is tilted by the tilting type liquid draining device after the etching, the liquid draining property is deteriorated. That is, since the surface tension of the etching solution for Al is large, a large amount of the etching solution on the surface accumulates on the side edge even by the inclination of the substrate, and when the substrate is returned to the horizontal posture,
The etchant spreads again on the surface.

【0008】基板の傾斜角度を大きくすればこの問題は
解決の方向に向かうが、基板が大型化している現状で
は、設備との干渉のために基板の傾斜角度を大きくする
ことが困難であり、また、傾斜角度を大きくすることに
より、その傾斜に時間がかかり、液切りのための基板停
止時間が長くなるため、基板の傾斜角度を大きくできな
い制約がある。この制約のため、Al用エッチング液を
用いた場合の液切り性の悪化が避けられず、その結果、
エッチング液から洗浄水への迅速な液置換が行われない
とか、初期洗浄水の廃棄量が増大するといった問題が生
じる。
If the angle of inclination of the substrate is increased, this problem will be solved. However, under the current situation where the substrate is enlarged, it is difficult to increase the angle of inclination of the substrate due to interference with equipment. In addition, when the inclination angle is increased, it takes time to incline the substrate, and the substrate stopping time for draining the liquid becomes longer. Therefore, there is a restriction that the inclination angle of the substrate cannot be increased. Due to this restriction, the deterioration of the drainage property when using the etching solution for Al is inevitable, and as a result,
A problem arises in that rapid liquid replacement from the etching solution to the cleaning water is not performed, and the amount of initial cleaning water discarded increases.

【0009】本発明の目的は、処理液の粘度が高い場合
にも、基板の傾斜角度を大きくすることなく、その表面
上から処理液を効率的に排除できる傾斜式液切り装置を
提供することにある。
An object of the present invention is to provide a tilting type liquid draining apparatus which can efficiently remove a processing liquid from the surface thereof without increasing the tilt angle of the substrate even when the viscosity of the processing liquid is high. It is in.

【0010】[0010]

【課題を解決するための手段】上記目的を達成するため
に、本発明の傾斜式液切り装置は、基板を水平方向へ搬
送しながらその基板の表面に処理液を供給して、その表
面を処理する搬送式の基板処理ライン内に配置され、前
記基板を傾斜させることにより、基板上から処理液を排
除する液切り装置本体と、基板の傾斜方向下流側に配置
され、基板の傾斜に伴って傾斜方向下流側へ流動して滞
留した処理液に接触するように、基板の側縁部に全長に
わたって所定間隔で当接又は接近する多数の液接触部材
により、基板上からの処理液の排除を促進する液切り促
進手段とを具備している。
In order to achieve the above object, an inclined liquid draining apparatus of the present invention supplies a processing liquid to the surface of a substrate while transporting the substrate in a horizontal direction, and cleans the surface. It is disposed in a substrate processing line of a transport type for processing, and a liquid draining device main body that eliminates a processing liquid from above the substrate by tilting the substrate, and is disposed downstream of the substrate in the direction of tilt, and with the inclination of the substrate. The processing liquid is removed from the substrate by a large number of liquid contact members that contact or approach the side edge of the substrate at predetermined intervals over the entire length so that the processing liquid flows downstream in the inclined direction and contacts the remaining processing liquid. And a drainage promoting means for promoting the drainage.

【0011】本発明の傾斜式液切り装置では、基板の傾
斜によって側縁部に溜まる処理液が、その側縁部に全長
にわたって所定間隔で当接又は接近する多数の液接触部
材を伝って、その側縁部から効率的に排除される。
In the inclined type liquid draining device of the present invention, the processing liquid accumulated on the side edge due to the inclination of the substrate is transmitted through the numerous liquid contact members which abut or approach the side edge at predetermined intervals over the entire length. It is effectively eliminated from its side edges.

【0012】前記液接触部材は、傾斜した基板の側縁部
に滞留する処理液に線接触又は点接触するものが排液性
の点から好ましく、具体的にはほぼ垂直なピン状部材が
好ましい。液接触部材は又、傾斜した基板の側縁部に当
接すると、側縁部を削って異物を生じるおそれがあるた
め、傾斜した基板の側縁部に接近させる非接触式が好ま
しい。
It is preferable that the liquid contact member makes line contact or point contact with the processing liquid staying at the side edge of the inclined substrate from the viewpoint of drainage, and specifically, a substantially vertical pin-shaped member is preferable. . When the liquid contact member comes into contact with the side edge of the inclined substrate, there is a possibility that the side edge is shaved to generate foreign matter. Therefore, a non-contact type in which the liquid contact member approaches the side edge of the inclined substrate is preferable.

【0013】本発明の傾斜式液切り装置は、粘性の高い
Al用エッチング液に特に好適であるが、効果上の程度
の差はあるものの、他のエッチング液、更にはエッチン
グ以外の処理液にも有効である。
The tilt type liquid draining device of the present invention is particularly suitable for an etching solution for Al having a high viscosity, but is different from other etching solutions and further to a processing solution other than the etching, although the degree of effect is different. Is also effective.

【0014】[0014]

【発明の実施の形態】以下に本発明の実施形態を図面に
基づいて説明する。図1は本発明の1実施形態に係る傾
斜式液切り装置を用いた搬送式基板処理装置の平面図、
図2は同傾斜式液切り装置の平面図、図3は図2中のX
−X線矢示図である。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a plan view of a transfer type substrate processing apparatus using an inclined type liquid draining apparatus according to one embodiment of the present invention,
FIG. 2 is a plan view of the inclined type liquid draining device, and FIG.
FIG.

【0015】搬送式基板処理装置は、液晶表示装置用ガ
ラス基板10(以下単に基板10と言う)のAlエッチ
ング処理を行うものである。この基板処理装置は、図1
に示すように、直線状の第1ラインA、第1ラインAに
直角に接続された第2ラインB、第2ラインBに直角に
接続されて第1ラインAに並列する第3ラインCとを組
み合わせたUターン形式のレイアウトを採用している。
The transfer type substrate processing apparatus performs an Al etching process on a glass substrate 10 for a liquid crystal display device (hereinafter simply referred to as a substrate 10). This substrate processing apparatus is shown in FIG.
, A first line A in a straight line, a second line B connected at a right angle to the first line A, a third line C connected at a right angle to the second line B and parallel to the first line A, And a U-turn layout.

【0016】第1ラインAは、受け入れ部1、液よけ部
2、エッチング部3及び液切り部4を直線状に連結して
構成されている。エッチング部3は、基板10の表面に
上方からAl用エッチング水を散布するシャワーユニッ
ト31を装備している。また、液切り部4は、本実施形
態に係る傾斜式液切り装置40を装備しており、その構
成については後で詳細に説明する。
The first line A is configured by connecting the receiving portion 1, the liquid blocking portion 2, the etching portion 3, and the liquid removing portion 4 in a straight line. The etching unit 3 is equipped with a shower unit 31 for spraying Al etching water on the surface of the substrate 10 from above. In addition, the liquid draining unit 4 is equipped with the inclined liquid draining device 40 according to the present embodiment, and its configuration will be described later in detail.

【0017】第2ラインBは水洗部5であり、基板10
の表面に上方から洗浄水を散布するシャワーユニット5
1を装備している。第3ラインCは、移載装置6、スピ
ンドライヤ7、移載装置8及び取り出し部9を直線状に
連結して構成されている。
The second line B is a washing section 5, and the substrate 10
Shower unit 5 for spraying washing water from above
Equipped with one. The third line C is configured by connecting the transfer device 6, the spin dryer 7, the transfer device 8, and the take-out unit 9 linearly.

【0018】第1ラインA及び第2ラインBは、基板1
0をライン長手方向に搬送するために、搬送方向に所定
間隔で並列された多数の搬送ローラを備えている。各搬
送ローラは、搬送方向に直角な水平ロールである。第2
ラインB、即ち水洗部5の入口部には、基板10の進行
方向を90度変更する転向機構52が設けられている。
The first line A and the second line B correspond to the substrate 1
In order to carry 0 in the longitudinal direction of the line, a plurality of carrying rollers arranged in parallel at a predetermined interval in the carrying direction are provided. Each transport roller is a horizontal roll perpendicular to the transport direction. Second
A turning mechanism 52 for changing the traveling direction of the substrate 10 by 90 degrees is provided at the line B, that is, at the entrance of the washing unit 5.

【0019】Alエッチング処理を受ける基板10は、
搬送装置11により受け入れ部1に搬入される。その基
板10は、ローラ搬送により、液よけ部2からエッチン
グ3部へ移動し、ここを通過する間にエッチング処理を
受ける。エッチング部3を通過した基板10は、引き続
きローラ搬送により、液切り部4内の傾斜式液切り装置
40を経て水洗部5へ移動し、進行方向を90度変更す
る。そして、水洗部5内を移動する間に水洗処理を受け
る。
The substrate 10 to be subjected to the Al etching process is
It is carried into the receiving section 1 by the transport device 11. The substrate 10 is moved from the liquid blocking part 2 to the etching part 3 by the roller conveyance, and undergoes an etching process while passing therethrough. The substrate 10 that has passed through the etching unit 3 moves to the washing unit 5 via the inclined liquid draining device 40 in the liquid draining unit 4 by roller conveyance, and changes the traveling direction by 90 degrees. Then, it undergoes a water washing process while moving inside the water washing unit 5.

【0020】水洗部5の出口部まで移動した基板10
は、移載装置6により水洗部5からスピンドライヤ7へ
搬送される。スピンドライヤ7で乾燥を終えた基板10
は、移載装置8によりスピンドライヤ7から取り出し部
9へ搬送され、更に搬送装置11により装置外へ搬出さ
れる。
The substrate 10 moved to the outlet of the washing unit 5
Is transferred from the washing section 5 to the spin dryer 7 by the transfer device 6. Substrate 10 dried by spin dryer 7
Is transported from the spin dryer 7 to the take-out section 9 by the transfer device 8, and further transported out of the device by the transport device 11.

【0021】本実施形態に係る傾斜式液切り装置40
は、図2及び図3に示すように、基板10を水平方向に
搬送する複数本の搬送ローラ41と、搬送ローラ41上
の基板10を搬送方向側方へ傾斜させる液切り装置本体
42と、液切り装置本体42の一側部上に設けられた液
切り促進手段43とを備えている。
The inclined liquid draining device 40 according to the present embodiment.
As shown in FIGS. 2 and 3, a plurality of transport rollers 41 for transporting the substrate 10 in the horizontal direction, a liquid removal device main body 42 for inclining the substrate 10 on the transport roller 41 to the transport direction side, The liquid draining device includes a liquid drainage accelerating means 43 provided on one side of the liquid draining device main body 42.

【0022】搬送ローラ41は、搬送方向に所定間隔で
配列された水平な駆動ローラであり、駆動軸41aの複
数位置に設けられた大径部41bで基板10を点支持
し、両側の鍔部41cで基板10の幅方向の位置決めを
行う。そして、複数の搬送ローラ41が同期駆動される
ことにより、基板10は所定速度で進行し、また任意位
置に停止する。
The transport rollers 41 are horizontal drive rollers arranged at predetermined intervals in the transport direction. The transport rollers 41 support the substrate 10 at points by large-diameter portions 41b provided at a plurality of positions on a drive shaft 41a. At 41c, the substrate 10 is positioned in the width direction. When the plurality of transport rollers 41 are driven synchronously, the substrate 10 advances at a predetermined speed and stops at an arbitrary position.

【0023】液切り装置本体42は、基板10を搬送方
向の複数位置で支持する複数本の基板支持ビーム42a
と、複数本の基板支持ビーム42aを基板10の搬送方
向側方へ傾斜させる両側一対の昇降装置42b,42c
とを有している。複数本の基板支持ビーム42aは、搬
送ローラ41の間に平行に配置された搬送方向に直角な
ビームで、基板10の搬送方向に平行な複数の連結部材
42dにより一体化されている。そして、傾斜しない水
平状態では、複数本の基板支持ビーム42aは基板搬送
面より僅か下方に位置する。
The liquid removal device main body 42 includes a plurality of substrate support beams 42a for supporting the substrate 10 at a plurality of positions in the transport direction.
And a pair of lifting devices 42b and 42c on both sides for inclining the plurality of substrate support beams 42a to the side in the transport direction of the substrate 10.
And The plurality of substrate support beams 42a are beams arranged perpendicularly to the transport direction between the transport rollers 41, and are integrated by a plurality of connecting members 42d parallel to the transport direction of the substrate 10. In a horizontal state where the substrate is not inclined, the plurality of substrate support beams 42a are located slightly below the substrate transfer surface.

【0024】両側一対の昇降装置42b,42cは、こ
こではモータ式ジャッキであり、中央の基板支持ビーム
42aを傾斜させることにより、複数本の基板支持ビー
ム42aを同期して傾斜させる。即ち、傾斜方向下流側
に位置する昇降装置42aは、複数本の基板支持ビーム
42aの一端部を回動自在に支持する支持部材42eを
昇降させ、その上昇により、複数本の基板支持ビーム4
2aの一端部上面を基板搬送面の僅か上方に位置させ
る。傾斜方向上流側に位置する昇降装置42cは、複数
本の基板支持ビーム42aの他端部を、レバー42fを
介して他端部上面が基板搬送面の僅か上方に位置するま
で上昇させ、引き続き所定ストロークの上昇を行うこと
により、複数本の基板支持ビーム42aを一端部の回動
支点を中心にして一端側へ傾斜させる。
The pair of elevating devices 42b and 42c on both sides are motor type jacks in this case, and incline the plurality of substrate supporting beams 42a by inclining the central substrate supporting beam 42a. That is, the lifting / lowering device 42a located on the downstream side in the tilt direction raises / lowers a support member 42e that rotatably supports one end of the plurality of substrate support beams 42a, and raises the plurality of substrate support beams 4
The upper surface of one end of 2a is located slightly above the substrate transfer surface. The lifting / lowering device 42c located on the upstream side in the tilt direction raises the other end of the plurality of substrate support beams 42a via the lever 42f until the upper surface of the other end is located slightly above the substrate transfer surface, and continues to move the predetermined position. By increasing the stroke, the plurality of substrate support beams 42a are inclined to one end side about the rotation fulcrum at one end.

【0025】これにより、搬送ローラ42a上の基板1
0は、基板支持ビーム42a上に移載され、且つ、搬送
方向側方へ所定角度で傾斜する。基板支持ビーム42a
の傾斜による搬送ローラ41と連結部材42cの干渉が
生じないように、連結部材42cは搬送ローラ41の十
分に下方で基板支持ビーム42aを連結している。基板
支持ビーム42aの一端部には、基板10の傾斜による
横ズレを防止するためにストッパー42gが設けられて
いる。
Thus, the substrate 1 on the transport roller 42a is
Numeral 0 is transferred onto the substrate support beam 42a and is inclined at a predetermined angle to the side in the transport direction. Substrate support beam 42a
The connecting member 42c connects the substrate supporting beam 42a sufficiently below the conveying roller 41 so that the conveying roller 41 and the connecting member 42c do not interfere with each other due to the inclination of. A stopper 42g is provided at one end of the substrate support beam 42a to prevent lateral displacement due to the inclination of the substrate 10.

【0026】液切り促進手段43は、基板10の搬送方
向に所定間隔で配列された多数本の接触部材43aを有
している。多数本の接触部材43aは、垂直な丸棒状の
細い金属ピンであり、各上端部が上方の水平な支持部材
43bに固定され、各下端部が自由端として開放されて
いる。そして、基板10が側方へ所定角度で傾斜したと
きに、基板10の傾斜方向下流側の側縁部が多数本の接
触部材43aに僅かの隙間をあけて対向する位置に、こ
の液切り促進手段43は設置されている。
The drainage promoting means 43 has a large number of contact members 43a arranged at predetermined intervals in the direction of transport of the substrate 10. The plurality of contact members 43a are vertical round bar-shaped thin metal pins, each upper end of which is fixed to an upper horizontal support member 43b, and each lower end of which is open as a free end. When the substrate 10 is inclined to the side at a predetermined angle, the liquid drainage facilitating position is set at a position where the side edge on the downstream side in the inclination direction of the substrate 10 faces the many contact members 43a with a slight gap. Means 43 is provided.

【0027】なお、接触部材43aは基本に等ピッチで
配列され、そのピッチについては後で詳しく述べるが、
基板支持ビーム42aに設けたストッパー42gと干渉
する位置では、接触部材43aが省略されている。
The contact members 43a are basically arranged at an equal pitch, and the pitch will be described in detail later.
At a position where the contact member 43a interferes with a stopper 42g provided on the substrate support beam 42a, the contact member 43a is omitted.

【0028】次に、本実施形態に係る傾斜式液切り装置
40の機能について説明する。
Next, the function of the inclined liquid draining device 40 according to the present embodiment will be described.

【0029】エッチング部3でのエッチング処理を終え
た基板10は、液切り部4に進入し、液切り装置本体4
2上の所定位置に停止する。このとき、液切り装置本体
42の基板支持ビーム42aは、基板搬送面の下方に水
平姿勢で待機している。液切り装置本体42上の所定位
置に基板10が停止すると、基板支持ビーム42aの一
端部が若干上昇し、他端部が大きく上昇する。これによ
り、基板10は搬送ローラ41上から基板支持ビーム4
2a上へ移載され、更に側方へ所定角度で傾斜する。
The substrate 10 that has been subjected to the etching process in the etching section 3 enters the liquid draining section 4 and the liquid draining apparatus main body 4
2 to a predetermined position. At this time, the substrate support beam 42a of the liquid removal device main body 42 is waiting in a horizontal posture below the substrate transfer surface. When the substrate 10 stops at a predetermined position on the draining device main body 42, one end of the substrate support beam 42a slightly rises, and the other end largely rises. As a result, the substrate 10 is moved from above the transport roller 41 to the substrate support beam 4.
2a, and is further inclined sideways at a predetermined angle.

【0030】基板10の傾斜により、基板10の表面上
に残るエッチング液が側方へ流動し、基板10の表面上
から排除されるが、エッチング液がAl用の高粘性のも
のであるため、所定角度の傾斜だけでは、表面張力によ
って比較的多くのエッチング液が傾斜方向下流側の側縁
部に残留する。しかるに、本実施形態に係る傾斜式液切
り装置40では、基板10の傾斜方向下流側の側縁部が
液切り促進手段43の多数本の接触部材43aに接近
し、側縁部に滞留するエッチング液が多数本の接触部材
43aに接触する。その結果、各接触部材43aを伝っ
て傾斜方向下流側の側縁部からエッチング液が効率的に
排除される。従って、側縁部に残留するエッチング液は
僅かとなる。
The etching liquid remaining on the surface of the substrate 10 flows sideways due to the inclination of the substrate 10 and is removed from the surface of the substrate 10. However, since the etching liquid is of high viscosity for Al, With only the inclination at the predetermined angle, a relatively large amount of the etching solution remains on the side edge on the downstream side in the inclination direction due to the surface tension. However, in the inclined liquid draining device 40 according to the present embodiment, the etching is performed such that the side edge of the substrate 10 on the downstream side in the inclination direction approaches the many contact members 43a of the liquid drainage promoting unit 43 and stays at the side edge. The liquid comes into contact with many contact members 43a. As a result, the etchant is efficiently removed from the side edge on the downstream side in the inclined direction along each contact member 43a. Therefore, the amount of the etching solution remaining on the side edge becomes small.

【0031】傾斜による液切りが終わると、基板支持ビ
ーム42aは元の水平状態に戻る。これにより、基板1
0は基板支持ビーム42a上から搬送ローラ41上へ移
載され、搬送ローラ41が再駆動されることにより液切
り部4から水洗部5へ搬送される。
When the liquid removal by the inclination is completed, the substrate supporting beam 42a returns to the original horizontal state. Thereby, the substrate 1
The reference numeral 0 is transferred from the substrate supporting beam 42a onto the transport roller 41, and is transported from the liquid draining section 4 to the water washing section 5 by re-driving the transport roller 41.

【0032】液切り部4では、傾斜式液切り装置40に
より基板10の傾斜角度を増大せずに効率的な液切りが
行われるため、液切り所要時間の延長が回避される。ま
た、設備の大型化が回避される。水洗部5では、基板1
0に対して初期洗浄を行い、その初期洗浄水は汚れが顕
著なため廃棄されるが、水洗部5へ持ち込まれるエッチ
ング液が減少するため、廃棄される初期洗浄水が減少す
る。
In the liquid draining section 4, since the liquid is efficiently drained without increasing the tilt angle of the substrate 10 by the tilting type liquid draining device 40, the extension of the time required for the liquid draining is avoided. In addition, upsizing of the equipment is avoided. In the washing section 5, the substrate 1
The initial cleaning water is subjected to initial cleaning, and the initial cleaning water is discarded because the dirt is conspicuous. However, since the amount of the etchant brought into the water washing unit 5 decreases, the initial cleaning water to be discarded decreases.

【0033】傾斜式液切り装置40による基板10の傾
斜角度は5〜20度が好ましく、8〜15度が特に好ま
しい。この傾斜角度が小さすぎると、液切りが十分に行
われず、大きすぎる場合は設備上の干渉や傾斜所要時間
の増大が問題になる。接触部材43aの配列ピッチは2
〜15mmが好ましく、3〜8mmが特に好ましい。こ
のピッチが小さすぎると液溜まりの原因になり、大きす
ぎる場合は隣接する接触部材間で液が切れにくくなり、
いずれも排液性が低下する。接触部材43aの寸法は、
丸棒の外径で1〜8mmが好ましく、2〜4mmが特に
好ましい。この外径が小さすぎると加工が困難になり、
大きすぎる場合は配列ピッチの増大により排液性が低下
する。
The inclination angle of the substrate 10 by the inclined liquid draining device 40 is preferably 5 to 20 degrees, and particularly preferably 8 to 15 degrees. If the inclination angle is too small, the liquid drainage is not sufficiently performed, and if it is too large, there is a problem of interference on equipment and an increase in the time required for the inclination. The arrangement pitch of the contact members 43a is 2
-15 mm is preferable, and 3-8 mm is particularly preferable. If this pitch is too small, it causes a liquid pool, and if it is too large, the liquid hardly runs off between adjacent contact members,
In any case, the drainage property decreases. The dimension of the contact member 43a is
The outer diameter of the round bar is preferably 1 to 8 mm, particularly preferably 2 to 4 mm. If this outer diameter is too small, processing becomes difficult,
If it is too large, the drainage property will decrease due to an increase in the arrangement pitch.

【0034】[0034]

【発明の効果】以上に説明したとおり、本発明の傾斜式
液切り装置は、傾斜した基板の傾斜方向下流側の側縁部
を、その側縁部に沿って配列された多数の接触部材に当
接又は接近させることにより、処理液の粘性が高い場合
にも、基板の傾斜角度を大きくせずに、その表面上から
処理液を効率的に排除できる。これにより、液切りに続
く水洗での負荷が低減され、水コストが低減される。ま
た、液切り所要時間の延長が回避され、設備長の増大等
が避けられる。
As described above, in the tilting type liquid draining apparatus of the present invention, the side edge on the downstream side in the tilt direction of the tilted substrate is connected to a large number of contact members arranged along the side edge. By contacting or approaching, even when the viscosity of the processing liquid is high, the processing liquid can be efficiently removed from the surface without increasing the inclination angle of the substrate. As a result, the load in the washing following the drainage is reduced, and the cost of water is reduced. In addition, the extension of the time required for liquid drainage can be avoided, and the increase in equipment length can be avoided.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の1実施形態に係る傾斜式液切り装置を
用いた搬送式基板処理装置の平面図である。
FIG. 1 is a plan view of a transfer type substrate processing apparatus using an inclined type liquid draining apparatus according to an embodiment of the present invention.

【図2】同傾斜式液切り装置の平面図である。FIG. 2 is a plan view of the inclined type liquid draining device.

【図3】図2中のX−X線矢示図である。FIG. 3 is a view taken along a line XX in FIG. 2;

【符号の説明】[Explanation of symbols]

1 受け入れ部 2 液よけ部 3 エッチング部 4 液切り部 40 傾斜式液切り装置 41 搬送ローラ 42 液切り装置本体 42a 基板支持ビーム 42b,42c 昇降装置 43 液切り促進手段 43a 接触部材 43b 支持部材 5 水洗部 6,8 移載装置 7 スピンドライヤ 9 取り出し部 10 基板 11 搬送装置 DESCRIPTION OF SYMBOLS 1 Receiving part 2 Liquid shielding part 3 Etching part 4 Liquid draining part 40 Inclined liquid draining device 41 Conveyance roller 42 Liquid draining device main body 42a Substrate support beams 42b, 42c Lifting device 43 Liquid draining promotion means 43a Contact member 43b Supporting member 5 Washing unit 6, 8 Transfer device 7 Spin dryer 9 Take-out unit 10 Substrate 11 Transport device

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 3B116 AA02 AB14 AB42 BA01 BA22 CC03 5F031 CA05 FA02 FA18 GA53 HA73 LA11 MA03 MA24 5F043 AA24 AA40 EE36 EE40  ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 3B116 AA02 AB14 AB42 BA01 BA22 CC03 5F031 CA05 FA02 FA18 GA53 HA73 LA11 MA03 MA24 5F043 AA24 AA40 EE36 EE40

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 基板を水平方向へ搬送しながらその基板
の表面に処理液を供給して、その表面を処理する搬送式
の基板処理ライン内に配置されて、基板を傾斜させるこ
とにより、基板上から処理液を排除する液切り装置本体
と、基板の傾斜方向下流側に配置され、基板の傾斜に伴
って傾斜方向下流側へ流動して滞留した基板上の処理液
に接触するように、基板の側縁部に全長にわたって所定
間隔で当接又は接近する多数の液接触部材により、基板
上からの処理液の排除を促進する液切り促進手段とを具
備することを特徴とする傾斜式液切り装置。
1. A substrate processing method comprising: supplying a processing liquid to a surface of a substrate while transporting the substrate in a horizontal direction; disposing the substrate in a substrate processing line of a transport type for processing the surface; A liquid removal device main body that removes the processing liquid from above, and is disposed on the downstream side in the tilt direction of the substrate, so as to contact the processing liquid on the substrate that has flowed and stayed downstream in the tilt direction with the tilt of the substrate. A slant-type liquid comprising: liquid drainage promoting means for promoting the elimination of the processing liquid from the substrate by means of a number of liquid contact members abutting or approaching the side edges of the substrate at predetermined intervals over the entire length. Cutting device.
【請求項2】 前記液接触部材はほぼ垂直なピン状部材
である請求項1に記載の傾斜式液切り装置。
2. The inclined liquid draining device according to claim 1, wherein the liquid contact member is a substantially vertical pin-shaped member.
【請求項3】 前記処理液はAl用エッチング液である
請求項1に記載の傾斜式液切り装置。
3. The tilting type liquid drainer according to claim 1, wherein the processing liquid is an etching liquid for Al.
JP2000375978A 2000-12-11 2000-12-11 Inclined drainer Expired - Fee Related JP3579348B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000375978A JP3579348B2 (en) 2000-12-11 2000-12-11 Inclined drainer
CN 01804684 CN1398428A (en) 2000-12-11 2001-12-07 Tilting fluid cutout device
PCT/JP2001/010764 WO2002049096A1 (en) 2000-12-11 2001-12-07 Tilting fluid cutout device
TW90130615A TWI254341B (en) 2000-12-11 2001-12-11 An inclined liquid-draining device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000375978A JP3579348B2 (en) 2000-12-11 2000-12-11 Inclined drainer

Publications (2)

Publication Number Publication Date
JP2002184832A true JP2002184832A (en) 2002-06-28
JP3579348B2 JP3579348B2 (en) 2004-10-20

Family

ID=18844904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000375978A Expired - Fee Related JP3579348B2 (en) 2000-12-11 2000-12-11 Inclined drainer

Country Status (4)

Country Link
JP (1) JP3579348B2 (en)
CN (1) CN1398428A (en)
TW (1) TWI254341B (en)
WO (1) WO2002049096A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100687499B1 (en) * 2004-08-23 2007-02-27 세메스 주식회사 Apparatus for transfering substrates

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101648649B (en) * 2009-09-03 2012-10-10 东莞宏威数码机械有限公司 Vacuum basal plate transmitting system
JP5842484B2 (en) * 2011-09-07 2016-01-13 日本電気硝子株式会社 Sheet glass positioning device and positioning method therefor
JP2013219200A (en) * 2012-04-09 2013-10-24 Disco Abrasive Syst Ltd Cutting device
CN104923535A (en) * 2015-06-17 2015-09-23 高金建 Glass washing device
CN107262437B (en) * 2017-07-31 2019-12-06 京东方科技集团股份有限公司 Cleaning device
CN109733885A (en) * 2019-01-21 2019-05-10 彩虹(合肥)液晶玻璃有限公司 Conveying equipment
CN112657921B (en) * 2020-12-23 2023-01-31 上海集成电路研发中心有限公司 Cleaning device and cleaning method for deep hole and deep groove

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3766193B2 (en) * 1997-11-27 2006-04-12 芝浦メカトロニクス株式会社 Etching device
JP2000031111A (en) * 1998-07-13 2000-01-28 Toshiba Corp Wet etching method
JP3638456B2 (en) * 1998-12-22 2005-04-13 大日本スクリーン製造株式会社 Substrate attitude changing device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100687499B1 (en) * 2004-08-23 2007-02-27 세메스 주식회사 Apparatus for transfering substrates

Also Published As

Publication number Publication date
JP3579348B2 (en) 2004-10-20
CN1398428A (en) 2003-02-19
TWI254341B (en) 2006-05-01
WO2002049096A1 (en) 2002-06-20

Similar Documents

Publication Publication Date Title
JP2008159663A (en) Substrate treating equipment
JP2002184832A (en) Tilting draining device
KR101076152B1 (en) Coating nozzle and coating apparatus
JP3628919B2 (en) Substrate processing apparatus and substrate processing method
KR20020019486A (en) Method for validating pre-process adjustments to a wafer cleaning system
JP4674904B2 (en) Substrate processing apparatus and substrate processing method
JP3622842B2 (en) Transport type substrate processing equipment
JP3866856B2 (en) Substrate processing equipment
JP4908316B2 (en) Cleaning apparatus, flat panel display manufacturing apparatus and flat panel display
JP4043410B2 (en) In-line development processor
JP3766968B2 (en) Substrate processing method and substrate processing apparatus
JPH11216430A (en) Washing device
JP2656980B2 (en) Glass substrate cleaning method
JP4365192B2 (en) Transport type substrate processing equipment
JPH11300300A (en) Method and device for treatment of substrate
WO2003050860A1 (en) Substrate processing device
US11919053B2 (en) Systems and methods to clean a continuous substrate
WO2005048336A1 (en) Liquid removing device
JP2001284310A (en) Apparatus and method for treating substrate
JP3600746B2 (en) Substrate processing equipment
JP2004296563A (en) Substrate treatment equipment
JP2003124182A (en) Substrate processor
JP2001230299A (en) Substrate processing equipment
JP2003124181A (en) Substrate processor
KR20080062920A (en) Apparatus for cleaning substrate and method for cleaning substrate using fabricating the same

Legal Events

Date Code Title Description
TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Effective date: 20040615

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Effective date: 20040715

Free format text: JAPANESE INTERMEDIATE CODE: A61

R150 Certificate of patent (=grant) or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080723

Year of fee payment: 4

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 4

Free format text: PAYMENT UNTIL: 20080723

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 5

Free format text: PAYMENT UNTIL: 20090723

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090723

Year of fee payment: 5

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100723

Year of fee payment: 6

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100723

Year of fee payment: 6

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100723

Year of fee payment: 6

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110723

Year of fee payment: 7

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110723

Year of fee payment: 7

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120723

Year of fee payment: 8

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120723

Year of fee payment: 8

LAPS Cancellation because of no payment of annual fees