JP2008159663A - Substrate treating equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide substrate treating equipment in which cleaning of a substrate to be treated is carried out effectively by preventing readhesion of contaminants to a cleaned substrate while enhancing throughput and reducing cost. <P>SOLUTION: The substrate treating equipment 10 for cleaning a substrate G to be treated using cleaning liquid comprises a means 111 for forming a carrying passage 32 and carrying the substrate G to be treated on the carrying a passage 32 with the substrate G facing upward, and cleaning nozzles 114 and 116 for supplying cleaning liquid onto the upper surface of the substrate G to be carried. The carrying passage 32 has a horizontal portion for carrying the substrate G under horizontal state, and inclining portions 80a and 81a forming an ascending slope of a predetermined angle from the horizontal portion. The cleaning nozzles 114 and 116 are arranged above the inclining portions 80a and 81a, and the cleaning liquid ejecting direction is set in a direction inclining downward by a predetermined angle against the horizontal direction and toward the upstream direction of the carrying passage 32 so that the cleaning liquid is ejected toward the inclining surface of the substrate G carried on the inclining portions 80a and 81a. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus that performs a cleaning process on a substrate to be processed in a photolithography process.

  For example, in the manufacture of an FPD (flat panel display), a predetermined film is formed on an LCD substrate which is a substrate to be processed, and then a photoresist (hereinafter referred to as a resist) which is a processing liquid is applied to form a resist film. The circuit pattern is formed by a so-called photolithography process in which the resist film is exposed corresponding to the circuit pattern and developed.

  By the way, in the resist coating and developing processing system for carrying out this photolithography process, a so-called flat-flow method has attracted attention as a developing method that can advantageously cope with the enlargement of the LCD substrate. In this flat flow method, a series of development processing steps such as development, rinsing, and drying are performed during transport while transporting the LCD substrate on a transport path in which transport rollers and a transport belt are laid in the horizontal direction.

In the conventional flat flow method, the LCD substrate is transported in a horizontal state from the upstream end loading section to the downstream end unloading section on the transport path, and a plurality of tools arranged above, below or beside the transport path are disposed on the transport path. Each stage of process processing is performed on a substrate that is moving or temporarily stopped (see Patent Document 1).
For example, in the scrubber cleaning unit, foreign matter on the substrate with respect to the LCD substrate transported in a horizontal position on the transport path by the scrubbing cleaning section, blow cleaning section, rinse processing section, and drying processing section disposed along the transport path A cleaning process is performed to remove the.
At that time, the foreign matter scraped off from the substrate surface in the scrubbing cleaning unit is immediately washed off from the substrate by air blow processing in the blow cleaning unit and rinse liquid shower processing in the rinse processing unit.
JP 2003-83675 A

  By the way, in the scrubbing cleaning unit of the scrubber cleaning unit, for example, an air knife 203, a first cleaning nozzle 204, and a roll brush 205 are disposed along a transport path 202 in which a transport roller 201 is laid as shown in FIG. The second cleaning nozzles 206 are arranged in order. That is, the LCD substrate G transported to the scrubbing cleaning unit 200 is first blow-cleaned by air blow sprayed from the air knife 203, and after cleaning water is sprayed from the first cleaning nozzle 204, the roll brush 205 As a result, the foreign matter on the substrate G is scraped off. The foreign matter scraped off from the substrate G is washed away by the cleaning liquid discharged from the second cleaning nozzle 206.

However, in the conventional flat flow method, since the cleaning liquid is discharged from the cleaning nozzle to the horizontal LCD substrate G, the cleaning liquid L does not flow immediately below the nozzle on the substrate as shown in FIG. There was a possibility that the thickness of L would be too thick.
That is, as the thickness of the cleaning liquid L on the substrate increases, the cleaning pressure on the substrate surface of the cleaning liquid L discharged from the cleaning nozzles 204 and 206 decreases, and the new liquid does not reach the substrate surface, thus reducing the cleaning power. There was a problem.

In addition, the cleaning liquid supplied on the substrate remains on the substrate in a state including the foreign matter, so that the foreign matter is reattached to the substrate G after the substrate drying process.
Moreover, even if the cleaning time and the number of times by the cleaning nozzle are increased in order to prevent such reattachment of foreign matters, there is a problem that not only the conveyance path and the processing time become longer, the throughput is lowered, but also the cost is increased. .

  The present invention has been made under the circumstances as described above, and in the cleaning process of the substrate to be processed, the foreign matter is prevented from reattaching to the substrate after the cleaning process, and the cleaning process is effectively performed. It is an object of the present invention to provide a substrate processing apparatus capable of improving throughput and reducing costs.

In order to solve the above-described problems, a substrate processing apparatus according to the present invention forms a transfer path for transferring a substrate to be processed in a supine posture in a substrate processing apparatus that performs a cleaning process on a substrate to be processed using a cleaning liquid. A transport unit that transports the substrate to be processed in a predetermined direction by the transport path; and a cleaning nozzle that supplies a cleaning liquid to an upper surface of the substrate to be processed that is transported through the transport path. A horizontal portion that conveys the processing substrate in a horizontal state; and an inclined portion that forms an upward inclination of a predetermined angle from the horizontal portion, and the cleaning nozzle is disposed above the inclined portion, and a discharge direction of the cleaning liquid is The cleaning liquid is discharged to an inclined surface of the substrate that is inclined in a predetermined angle downward with respect to the horizontal direction and is upstream of the transfer path and is transferred on the inclined portion. .
The transport path is formed by laying a plurality of transport rollers, and the inclined portion gradually increases the height position of the plurality of transport rollers provided in parallel along the transport direction. It is desirable to be formed by.

By configuring in this way, the cleaning liquid that has been deposited directly under the nozzle can flow immediately to the rear of the substrate, so that the liquid thickness directly under the nozzle can be reduced, and as a result, the liquid discharged from the nozzle has landed. A decrease in the pressure of the cleaning liquid (cleaning pressure) is prevented, and a new liquid can be reliably brought into contact with the substrate surface.
In addition, since the cleaning liquid supplied onto the substrate can flow to the rear of the substrate together with the foreign matter, and the liquid does not remain, the problem of reattachment of the foreign matter can be solved.
Further, by providing the inclined portion, the cleaning efficiency can be improved as described above, and the conveyance path can be shortened, so that the effects of improving the throughput and reducing the cost can be obtained.

The conveyance path includes a first inclined portion and a second inclined portion that are successively formed in order from the upstream side to the downstream side of the conveyance path, and the first inclined portion and the second inclined portion. Are provided with a first cleaning nozzle and a second cleaning nozzle for discharging a cleaning liquid to the inclined surface of the substrate which is transported, respectively, and the apex of the second inclined portion is higher than the horizontal portion. It is desirable that the height dimension is higher than the height dimension of the apex of the first inclined portion.
If comprised in this way, since the 2nd inclination part of a downstream is longer than the 1st inclination part of an upstream, the washing | cleaning liquid supplied on the board | substrate from the 2nd washing nozzle has a vigorous effect. Therefore, the cleaning process can be performed without leaving the cleaning solution on the substrate.

Further, it is preferable that the discharge amount of the cleaning liquid discharged from the second cleaning nozzle is controlled to be larger than the discharge amount of the cleaning liquid discharged from the first cleaning nozzle.
If comprised in this way, even if the cleaning liquid supplied from the 1st cleaning nozzle remains on a board | substrate, all can be washed off from a board | substrate with the larger amount of cleaning liquid supplied from a 2nd cleaning nozzle after that. .

  According to the present invention, in the cleaning process of the substrate to be processed, it is possible to prevent the foreign matter from reattaching to the substrate after the cleaning process, effectively perform the cleaning process, and improve the throughput and reduce the cost. A substrate processing apparatus can be obtained.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a plan view of a coating and developing processing system to which a substrate processing apparatus according to the present invention can be applied.
This coating / development processing system 10 is installed in a clean room. For example, a glass substrate for LCD is used as a substrate to be processed, and a series of cleaning, resist coating, pre-baking, developing, post-baking, and the like during a photolithography process in the LCD manufacturing process. The processing is performed. The exposure process is performed by an external exposure apparatus 12 installed adjacent to this system.

In the coating and developing system 10, a horizontally long process station (P / S) 16 is arranged at the center, and a cassette station (C / S) 14 and an interface station (I / F) are arranged at both ends in the longitudinal direction (X direction). 18 are arranged.
The cassette station (C / S) 14 is a port for loading and unloading a plurality of cassettes C in such a manner that the substrates G are stacked in multiple stages, and up to four can be placed side by side in a horizontal direction (Y direction). A cassette stage 20 and a transport mechanism 22 for taking the substrate G in and out of the cassette C on the stage 20 are provided. The transport mechanism 22 has a means for holding the substrate G, for example, a transport arm 22a, and can be operated with four axes of X, Y, Z, and θ. Delivery is now possible.

In the process station (P / S) 16, the processing units are arranged in the order of the process flow or the process on a pair of parallel and opposite lines A and B extending in the horizontal system longitudinal direction (X direction).
More specifically, in the upstream process line A from the cassette station (C / S) 14 side to the interface station (I / F) 18 side, the cleaning process unit 24, the first thermal processing unit 26, the coating The process unit 28 and the second thermal processing unit 30 are arranged in a line. Here, the cleaning process unit 24 includes an excimer UV irradiation unit (e-UV) 34 and a scrubber cleaning unit (SCR) 36 to which the present invention can be applied in order from the upstream side along the first flat flow path 32. ing. The first thermal processing unit 26 is provided with an adhesion unit (AD) 40 and a cooling unit (COL) 42 in order from the upstream side along the first flat flow path 32.

  The coating process unit 28 includes a resist coating unit (CT) 44 and a vacuum drying unit (VD) 46, and between the first flat flow path 32 and the resist coating unit (CT) 44, both units 44, 46 are connected. And a transfer mechanism (not shown) for transferring the substrate G in the direction of the process line A between the vacuum drying unit (VD) 46 and the second flat flow transfer path 48. The second thermal processing unit 30 is provided with a pre-bake unit (PREBAKE) 50 and a cooling unit (COL) 52 in order from the upstream side along the second flat flow path 48.

  On the other hand, in the downstream process line B from the interface station (I / F) 18 side to the cassette station (C / S) 14 side, a development unit (DEV) 54 and an i-ray UV irradiation unit (i-UV) 56 are provided. The post bake unit (POBAKE) 58, the cooling unit (COL) 60, and the inspection unit (AP) 62 are arranged in a line. These units 54, 56, 58, 60, 62 are provided in this order from the upstream side along the third flat flow path 64. The post bake unit (POBAKE) 58 and the cooling unit (COL) 60 constitute a third thermal processing unit 59.

  An auxiliary transfer space 66 is provided between the process lines A and B, and a shuttle 68 capable of placing the substrate G horizontally in units of one sheet is both in the process line direction (X direction) by a drive mechanism (not shown). You can move in the direction.

  The interface station (I / F) 18 exchanges the substrate G with the conveyance device 70 for exchanging the substrate G with the second and third flat flow conveyance paths 48 and 64. A buffer stage (BUF) 74, an extension cooling stage (EXT COL) 76, and a peripheral device 78 are arranged around them.

  A stationary buffer cassette (not shown) is placed on the buffer stage (BUF) 74. The extension / cooling stage (EXT / COL) 76 is a stage for transferring a substrate having a cooling function, and is used when the substrate G is exchanged between the transfer devices 70 and 72. The peripheral device 78 may have a configuration in which, for example, a titler (TITLER) and a peripheral exposure device (EE) are stacked vertically. Each of the transfer devices 70 and 72 has transfer arms 70 a and 72 a that can hold the substrate G, and can access adjacent units for transferring the substrate G.

  FIG. 2 shows a processing procedure for one substrate G in the coating and developing treatment system 10. First, in the cassette station (C / S) 14, the transport mechanism 22 takes out one substrate G from one of the cassettes C on the stage 20, and removes the taken substrate G in the process station (P / S) 16. The process line A is carried into the carry-in portion on the process line A side, that is, the starting point of the first flat flow conveyance path 32 in a posture in a supine position (with the substrate surface to be processed facing up) (step S1 in FIG. 2).

  In this way, the substrate G is transported toward the downstream side of the process line A in the posture of lying on the first flat flow transport path 32. In the first-stage cleaning process unit 24, the substrate G is sequentially subjected to an ultraviolet cleaning process and a scrubbing cleaning process by an excimer UV irradiation unit (e-UV) 34 and a scrubber cleaning unit (SCR) 36 (steps S2 and S3).

The scrubber cleaning unit (SCR) 36 removes particulate dirt (foreign matter) from the substrate surface by performing brushing cleaning and blow cleaning on the substrate G moving on the flat flow transport path 32, and then rinses. Processing is performed, and finally the substrate G is dried using an air knife or the like.
In addition, in this scrubber washing | cleaning unit (SCR) 36, since this invention can be used suitably, the structure and effect are mentioned later in detail.
When a series of cleaning processes in the scrubber cleaning unit (SCR) 36 is finished, the substrate G passes through the first thermal processing section 26 as it is down the first flat flow path 32.

  In the first thermal processing unit 26, when the substrate G is carried into the adhesion unit (AD) 40, first, the substrate G is subjected to a heating dehydration baking process to remove moisture. Next, the substrate G is subjected to an adhesion process using vapor HMDS, and the surface to be processed is hydrophobized (step S4). After the completion of this adhesion process, the substrate G is cooled to a predetermined substrate temperature by the cooling unit (COL) 42 (step S5). Thereafter, the substrate G is transferred from the end point (unloading unit) of the first flat flow transfer path 32 to the transfer mechanism in the coating process unit 28.

  In the coating process unit 28, the substrate G is first coated with a resist solution on the upper surface (surface to be processed) by a resist coating unit (CT) 44 using, for example, a spinless method using a slit nozzle, and immediately after that, the substrate G is dried under reduced pressure on the downstream side. The unit (VD) 46 receives a drying process by reduced pressure (step S6).

  Thereafter, the substrate G is transferred to the start point (carry-in portion) of the second flat-flow conveyance path 48 by the conveyance mechanism in the coating process unit 28. The substrate G is transported to the downstream side of the process line A in a posture on its back also on the second flat flow transport path 48 and passes through the second thermal processing unit 30.

  In the second thermal processing unit 30, the substrate G is first pre-baked by the pre-bake unit (PREBAKE) 50 as a heat treatment after resist coating or a heat treatment before exposure (step S7). By this pre-baking, the solvent remaining in the resist film on the substrate G is removed by evaporation, and the adhesion of the resist film to the substrate is enhanced. Next, the substrate G is cooled to a predetermined substrate temperature by the cooling unit (COL) 52 (step S8). Thereafter, the substrate G is taken up by the transfer device 70 of the interface station (I / F) 18 from the end point (unloading unit) of the second flat flow transfer path 48.

In the interface station (I / F) 18, the substrate G is carried from the extension / cooling stage (EXT / COL) 76 to the peripheral exposure device (EE) of the peripheral device 78, where the resist adhering to the peripheral portion of the substrate G is removed. After receiving exposure for removal at the time of development, it is sent to the adjacent exposure apparatus 12 (step S9).
In the exposure device 12, a predetermined circuit pattern is exposed to the resist on the substrate G. Then, when the substrate G that has undergone pattern exposure is returned from the exposure apparatus 12 to the interface station (I / F) 18, it is first carried into a titler (TITLER) of the peripheral device 78, where it is transferred to a predetermined portion on the substrate. Is recorded (step S10).

Thereafter, the substrate G is returned to the extension / cooling stage (EXT / COL) 76. Transfer of the substrate G at the interface station (I / F) 18 and exchange of the substrate G with the exposure apparatus 12 are performed by transfer devices 70 and 72. Finally, the substrate G is carried from the transfer device 72 to the starting point (loading unit) of the third flat flow transfer path 64 laid on the process line B side of the process station (P / S) 16.
In this way, the substrate G is transported toward the downstream side of the process line B in a posture of lying on the third flat transporting path 64 this time. In the first development unit (DEV) 54, the substrate G is subjected to a series of development processes of development, rinsing, and drying while being conveyed in a flat flow (step S11).

The substrate G that has undergone a series of development processes in the development unit (DEV) 54 passes through the i-line irradiation unit (i-UV) 56 adjacent to the downstream side while being placed on the third flat flow conveyance path 64 as it is. A decoloring process by i-line irradiation is performed (step S12). After that, the substrate G passes through the third thermal processing unit 59 and the inspection unit (AP) 62 sequentially while being placed on the third flat flow transport path 64, and in the third thermal processing unit 59, the substrate G G is first subjected to post-baking as a heat treatment after the development processing in the post-baking unit (POBAKE) 58 (step S13). By this post-baking, the developer and the cleaning solution remaining on the resist film on the substrate G are removed by evaporation, and the adhesion of the resist pattern to the substrate is also enhanced.
Next, the substrate G is cooled to a predetermined substrate temperature by the cooling unit (COL) 60 (step S14). In the inspection unit (AP) 62, non-contact line width inspection, film quality / film thickness inspection, and the like are performed on the resist pattern on the substrate G (step S15).

  On the cassette station (C / S) 14 side, the transport mechanism 22 receives the substrate G that has completed all the steps of the coating and developing process from the end point (forging portion) of the third flat flow transport path 64, and receives the received substrate. G is accommodated in any one (usually the original) cassette C (return to step S1).

In the coating and developing processing system 10, as described above, the present invention can be applied to the scrubber cleaning unit (SCR) 36 provided in the first flat flow conveyance path 32.
Hereinafter, based on FIG.3 and FIG.4, the structure and effect | action of the scrubber washing | cleaning unit (SCR) 36 in one Embodiment of this invention are demonstrated in detail.
FIG. 3 is a schematic cross-sectional view showing the configuration of the main part of the scrubber cleaning unit (SCR) 36 in this embodiment. FIG. 4 is a diagram schematically showing the configuration of the scrubbing cleaning unit of the scrubber cleaning unit (SCR) 36.

As shown in the drawing, along the flat flow conveying path 32 extending in the horizontal direction (X direction), a carry-in unit 101, a scrubbing washing unit 102, a blow washing unit 103, a rinse unit 104, a drying unit 105, and a carry-out unit 106 are sequentially arranged from the upstream side. Is provided. The transport path 32 is provided with a plurality of transport rollers 111 (transport means), and the transport rollers 111 are rotated along the transport direction by a driving means (transport means) (not shown) to transport the substrate G in a flat flow. It is configured as follows.
First, a schematic configuration of each processing unit in the scrubber cleaning unit (SCR) 36 will be described.
A fan filter unit (FFU) 112 that supplies clean air in a downflow is attached to the ceiling of the carry-in unit 101.

Further, in the scrubbing cleaning unit 102, an air curtain nozzle 113, a chemical solution supply nozzle 114 (first cleaning nozzle), a roll brush 115, and a cleaning nozzle 116 (second cleaning nozzle) are sequentially arranged along the transport path 32 from the upstream side. ) Is arranged.
Note that the air curtain nozzle 113 is disposed so as to blow a slit-shaped air flow toward the downstream side in the transport direction with respect to the upper surface of the substrate G that passes immediately below. Further, the arrangement, operation control, and the like of the chemical solution supply nozzle 114, the cleaning nozzle 116, the transport roller 111, etc. in the other scrubbing cleaning unit 102 are portions related to the features of the present invention and will be described in detail later.

In the blow cleaning unit 103, for example, a two-fluid jet nozzle 119 is provided above the transport path 32 as a blow cleaning nozzle.
A rinse nozzle 123 is provided in the rinse unit 104 above the conveyance path 32.
An air knife 126 is provided above the transport path 32 in the drying unit 105.
The rinse nozzle 123 and the air knife 126 may be provided on both the left and right sides of the conveyance path 32. The blow cleaning unit 103 may also be provided with a lower rinsing nozzle (not shown) for spraying a rinsing liquid for cleaning on the lower surface (back surface) of the substrate G from below the transport path 32.

A fan filter unit (FFU) 129 that supplies clean air in a downflow is attached to the ceiling of the carry-out unit 106.
In addition, partition walls 140, 141, 142, and 144 are provided between adjacent processing units, except for the flat flow path 32.

Further, pans 117, 120, 124, and 127 for collecting the liquid that has fallen under the conveyance path 32 are provided in the processing units 102, 103, 104, and 105 that handle the liquid, respectively. A drain outlet is provided at the bottom of each pan, and pipes 118, 122, 125, and 128 of a recovery system for drained liquid or a drainage system are connected to each drain outlet.
Further, an exhaust port 121 leading to an exhaust mechanism (not shown) having, for example, an exhaust pump or an exhaust fan is provided at the bottom of the blow cleaning unit 103 located at the center of the scrubber cleaning unit (SCR) 36. .

Next, the arrangement, operation control, and the like of the chemical solution supply nozzle 114, the cleaning nozzle 116, the transport roller 111, and the like in the scrubbing cleaning unit 102 will be described.
As shown in FIGS. 3 and 4, for example, two raised portions 80 and 81 are formed in the transport path 32 in the scrubbing cleaning unit 102. In these raised portions 80 and 81, an upward inclined portion 80a (first inclined portion) and 81a (second inclined portion) that are upwardly inclined in the transport direction are formed, respectively, and these upward inclined portions 80a and 81a are formed. Are arranged so that the height position of the conveying rollers 111 laid in parallel increases stepwise.

  That is, as shown in FIG. 4, the transport roller 111 a, 111 b, and the upward inclined portion 80 a of the raised portion 80 are inclined at a predetermined angle θ1 (preferably 2 ° to 5 °) with respect to the horizontal axis H (horizontal portion). 111c is arranged, and the descending slope is arranged with conveyance rollers 111d and 111e with the conveyance roller 111c as a vertex.

  Further, ascending inclined portion 81a of raised portion 81 has conveying rollers 111f and 111g arranged so as to incline at an angle θ1 with respect to horizontal axis H, starting from conveying roller 111e on horizontal axis H. Conveying rollers 111h and 111i are arranged with the roller 111g as a vertex.

  Further, the chemical solution supply nozzle 114 is disposed above the upward inclined portion 80a of the raised portion 80, and the discharge direction of the chemical solution supply nozzle 114 is inclined downward by a predetermined angle θ2 (preferably 35 ° to 45 °) with respect to the horizontal direction and the conveyance path. 32 in the upstream direction. In addition, the distance dimension h1 between the board | substrate G conveyed by the upward inclination part 80a of the protruding part 80 and a nozzle discharge port becomes like this. Preferably it is 20-30 mm.

  In addition, the cleaning nozzle 116 is disposed above the upward inclined portion 81a in the raised portion 81, and the discharge direction of the cleaning nozzle 116 is inclined downward by a predetermined angle θ2 (preferably 35 ° to 45 °) with respect to the horizontal direction and the conveyance path 32. The upstream direction of the. In addition, the distance dimension h1 between the board | substrate G conveyed by the upward inclination part 81a of the protruding part 81 and a nozzle discharge port shall be 20-30 mm similarly to the chemical | medical solution supply nozzle 114. FIG.

Further, for example, acid or alkaline chemical liquid is supplied from the first liquid supply means 130 to the chemical liquid supply nozzle 114 as a chemical liquid (cleaning liquid) to be applied before processing by the roll brush 115, and the surface of the substrate G is supplied with a predetermined discharge pressure. It is designed to discharge chemicals.
Further, for example, pure water is supplied from the second liquid supply means 131 to the cleaning nozzle 116 as a cleaning liquid for washing away the foreign matter scraped off by the brush, and the chemical liquid is discharged onto the surface of the substrate G with a predetermined discharge pressure. Has been made.
The operation of the first liquid supply means 130 and the second liquid supply means 131 is controlled by a controller 132 that is a control means, and discharge timing, liquid supply amount, and the like at the corresponding nozzles are controlled.

Further, the height dimension h3 with respect to the horizontal axis H of the ridge 81 located on the downstream side (the apex of the ascending slope 81a) is the height of the ridge 80 on the upstream side (the apex of the ascending slope 80a) with respect to the horizontal axis H. A configuration higher than the dimension h2 is more preferable.
By doing so, since the upstream ascending portion 81a is longer than the upstream ascending portion 80a, the cleaning liquid supplied onto the substrate G from the cleaning nozzle 116 can be effectively and effectively applied to the substrate after the substrate. The cleaning process can be performed without leaving the cleaning liquid on the substrate.

In addition, the controller 132 performs control so that the amount of the cleaning liquid discharged from the cleaning nozzle 116 by the second liquid supply means 131 is larger than the amount of the chemical liquid discharged from the chemical liquid supply nozzle 114 by the first liquid supply means 130. preferable.
By doing so, even if the chemical liquid supplied from the chemical liquid supply nozzle 114 remains on the substrate, it can be completely washed off from the substrate G by a larger amount of cleaning liquid supplied from the cleaning nozzle 116 thereafter.

In the scrubber cleaning unit 36 (SCR) configured as described above, the substrate G that has been subjected to the excimer UV irradiation process is first transported into the scrubbing cleaning unit 102 through the carry-in unit 101 as shown in FIG. The
In the scrubbing cleaning unit 102, the chemical solution discharge by the chemical solution supply nozzle 114 is started immediately before the front end of the substrate G to be conveyed reaches the upward inclined portion 80 a of the raised portion 80. Chemical solution is supplied.

Here, since the chemical solution discharged from the chemical solution supply nozzle 114 reaches the upward inclined portion 80a of the raised portion 80 (toward the upstream side of the conveyance path) as shown in FIG. Flows backward. That is, the foreign matter dissolved on the substrate by the chemical solution flows down to the back of the substrate G together with the chemical solution.
In addition, since the chemical liquid that has landed on the substrate immediately flows to the back of the substrate, the thickness of the liquid immediately below the nozzle is reduced, and as a result, the pressure (cleaning pressure) when the chemical liquid discharged from the nozzle is deposited is reduced. In addition, the substrate can be effectively cleaned with the substrate because the liquid can be reliably brought into contact with the substrate surface.

  After cleaning by the chemical solution supply nozzle 114, the substrate G passes immediately while rubbing under the roll brush 115. The roll brush 115 rotates in a direction opposite to the conveying direction by a rotational driving force of a brush driving unit (not shown) and scrapes off foreign matters (dust, debris, contaminants, etc.) on the substrate surface.

The foreign matter scraped off by the roll brush 115 is immediately washed off from the substrate G by the cleaning water discharged and supplied from the cleaning nozzle 116 onto the substrate.
That is, immediately before the front end of the substrate G to be transported reaches the upward inclined portion 81a of the raised portion 81, the cleaning liquid discharge by the cleaning nozzle 116 is started, and the cleaning liquid is supplied from the front end to the rear end on the substrate. .

Here, as shown in FIG. 4, the cleaning liquid discharged from the cleaning nozzle 116 reaches the upward inclined portion 81a of the raised portion 81 (toward the upstream side), so that the cleaning liquid on the substrate is moved backward by its own weight. run down. That is, the foreign matter scraped off by the roll brush 115 efficiently flows to the rear of the substrate together with the cleaning liquid and is removed from the substrate G.
In addition, since the cleaning liquid that has landed on the substrate immediately flows to the rear of the substrate, the liquid thickness immediately below the nozzle becomes thin, and as a result, the pressure (cleaning pressure) at the time of landing of the cleaning liquid discharged from the nozzle increases. Therefore, a new liquid can be reliably brought into contact with the substrate surface, and the substrate cleaning is effectively performed.
The liquid that has fallen under the substrate G or the transport path 32 in the scrubbing cleaning unit 102 is collected by the pan 117.

  Thereafter, the substrate G enters the blow cleaning unit 103 and is subjected to blow cleaning by the two-fluid jet nozzle 119. The two-fluid jet nozzle 119 sprays a mixed fluid of a pressurized cleaning liquid (for example, water) and a pressurized gas (for example, nitrogen) onto the substrate, and adds foreign matter adhering to or remaining on the surface of the substrate G. Remove with very strong impact force of pressure 2 fluid.

  In the rinse section 104, the rinse nozzle 123 supplies a rinse liquid for final cleaning toward the substrate G transported on the transport path 32. The rinse liquid supplied onto the substrate G flows on the substrate toward the rear end side of the substrate, and most of it falls into the pan 124 in the rinse section 104.

The substrate G rinsed and cleaned in the rinsing unit 104 is carried into the drying unit 105 where the drying process is performed by the air knife 126. That is, the air knife 126 applies a high-pressure gas flow to the substrate G in the direction opposite to the transport direction, whereby the rinsing liquid remaining on the substrate G is moved toward the rear of the substrate and driven out from the rear end of the substrate (liquid cutting). )
Then, the substrate G that has been drained in the drying unit 105 is unloaded from the unloading unit 106 and loaded into the subsequent adhesion unit (AD) 40.

  As described above, according to the embodiment of the substrate processing apparatus of the present invention, the raised portions 80 and 81 are continuously provided in the transport path 32 in the scrubbing cleaning unit 102 that performs substrate cleaning, and the respective upward inclinations are provided. The nozzles are arranged so that the cleaning liquid is deposited on the passages 80a and 81a (toward the upstream side). Accordingly, the cleaning liquid supplied onto the substrate can be flowed to the rear of the substrate together with the foreign matter, and since the liquid does not remain, the problem of reattachment of the foreign matter can be solved.

In addition, since the cleaning liquid that has landed directly under the nozzle immediately flows to the back of the substrate, the thickness of the liquid just under the nozzle can be reduced. As a result, the pressure (cleaning pressure) of the cleaning liquid discharged from the nozzle and deposited is reduced. Can be prevented, and the substrate can be effectively cleaned.
Further, by providing the upward inclined portions 80a and 81a, the cleaning efficiency can be improved as described above, and the conveyance path 32 can be shortened, so that the effects of improving the throughput and reducing the cost can be obtained.

  The substrate to be processed in the present invention is not limited to an LCD substrate, and various substrates for flat panel displays, semiconductor wafers, CD substrates, glass substrates, photomasks, printed substrates and the like are also possible.

  The present invention can be applied to a substrate processing apparatus that performs a cleaning process on an LCD substrate or the like, and can be suitably used in the semiconductor manufacturing industry, the electronic device manufacturing industry, and the like.

FIG. 1 is a plan view of a coating and developing processing system to which a substrate processing apparatus according to the present invention can be applied. FIG. 2 is a flowchart showing a substrate processing flow of the coating and developing processing system of FIG. FIG. 3 is a schematic cross-sectional view showing a configuration of a main part of a scrubber cleaning unit provided in the coating and developing treatment system of FIG. FIG. 4 is a diagram schematically showing the configuration of the scrubbing cleaning unit of the scrubber cleaning unit of FIG. FIG. 5 is a schematic cross-sectional view showing a configuration of a conventional scrubbing cleaning unit. FIG. 6 is an enlarged view of a main part of the scrubbing cleaning unit of FIG.

Explanation of symbols

10 Coating and development processing system (substrate processing equipment)
32 Conveyance path 36 Scrubber cleaning unit 80 Raised portion (first raised portion)
80a Ascending slope (first slope)
81 Uplift (second uplift)
81a Ascending slope (second slope)
102 Scrubbing cleaning section 111 Conveying roller (conveying means)
114 Chemical supply nozzle (first cleaning nozzle)
115 Roll brush 116 Cleaning nozzle (second cleaning nozzle)
130 Chemical liquid supply means 131 Cleaning liquid supply means 132 Controller G LCD substrate (substrate to be processed)

Claims (4)

In a substrate processing apparatus for cleaning a substrate to be processed using a cleaning liquid,
A transport path for transporting the substrate to be processed in a supine posture is formed, transport means for transporting the substrate to be processed in a predetermined direction by the transport path, and a cleaning liquid on the upper surface of the substrate to be transported through the transport path. A cleaning nozzle to supply,
The transport path includes a horizontal portion that transports the substrate to be processed in a horizontal state, and an inclined portion that forms an upward slope of a predetermined angle from the horizontal portion,
The cleaning nozzle is disposed above the inclined portion, and the discharge direction of the cleaning liquid is a direction inclined at a predetermined angle downward with respect to the horizontal direction, and is in the upstream direction of the conveyance path,
A substrate processing apparatus for discharging a cleaning liquid to an inclined surface of the substrate conveyed on the inclined portion. The transport path is formed by laying a plurality of transport rollers,
2. The substrate according to claim 1, wherein the inclined portion is formed by stepwise increasing the height positions of the plurality of transport rollers provided in parallel along the transport direction. Processing equipment. The conveyance path has a first inclined part and a second inclined part that are continuously formed in order from the upstream side to the downstream side of the conveyance path,
Above the first inclined portion and the second inclined portion, there are provided a first cleaning nozzle and a second cleaning nozzle that discharge a cleaning liquid to the inclined surface of the substrate that is transported, respectively.
The height dimension with respect to the said horizontal part of the vertex of the said 2nd inclination part is formed higher than the height dimension of the vertex of the said 1st inclination part, The Claim 1 or Claim 2 characterized by the above-mentioned. The substrate processing apparatus described.   4. The substrate processing according to claim 3, wherein a discharge amount of the cleaning liquid discharged from the second cleaning nozzle is controlled to be larger than a discharge amount of the cleaning liquid discharged from the first cleaning nozzle. apparatus.

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