JP2002151515A5 - - Google Patents

Download PDF

Info

Publication number
JP2002151515A5
JP2002151515A5 JP2001326119A JP2001326119A JP2002151515A5 JP 2002151515 A5 JP2002151515 A5 JP 2002151515A5 JP 2001326119 A JP2001326119 A JP 2001326119A JP 2001326119 A JP2001326119 A JP 2001326119A JP 2002151515 A5 JP2002151515 A5 JP 2002151515A5
Authority
JP
Japan
Prior art keywords
layer
integrated circuit
titanium
aluminum
film structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001326119A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002151515A (ja
Filing date
Publication date
Priority claimed from US09/698,459 external-priority patent/US6646346B1/en
Application filed filed Critical
Publication of JP2002151515A publication Critical patent/JP2002151515A/ja
Publication of JP2002151515A5 publication Critical patent/JP2002151515A5/ja
Pending legal-status Critical Current

Links

JP2001326119A 2000-10-27 2001-10-24 チタン／アルミニウム合金を用いた集積回路金属被着膜 Pending JP2002151515A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/698,459 US6646346B1 (en) 2000-10-27 2000-10-27 Integrated circuit metallization using a titanium/aluminum alloy
US698459 2000-10-27

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006250729A Division JP4636414B2 (ja) 2000-10-27 2006-09-15 チタン／アルミニウム合金を用いた集積回路金属被着膜

Publications (2)

Publication Number Publication Date
JP2002151515A JP2002151515A (ja) 2002-05-24
JP2002151515A5 true JP2002151515A5 (enExample) 2005-06-30

Family

ID=24805338

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2001326119A Pending JP2002151515A (ja) 2000-10-27 2001-10-24 チタン／アルミニウム合金を用いた集積回路金属被着膜
JP2006250729A Expired - Lifetime JP4636414B2 (ja) 2000-10-27 2006-09-15 チタン／アルミニウム合金を用いた集積回路金属被着膜

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2006250729A Expired - Lifetime JP4636414B2 (ja) 2000-10-27 2006-09-15 チタン／アルミニウム合金を用いた集積回路金属被着膜

Country Status (4)

Country Link
US (2) US6646346B1 (enExample)
JP (2) JP2002151515A (enExample)
DE (1) DE10152913A1 (enExample)
SG (1) SG115421A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7121997B2 (en) * 1999-06-09 2006-10-17 Ethicon, Inc. Surgical instrument and method for treating female urinary incontinence
US7001841B2 (en) * 2002-08-26 2006-02-21 Matsushita Electric Industrial Co., Ltd. Production method of semiconductor device
US8035183B2 (en) * 2003-05-05 2011-10-11 Udt Sensors, Inc. Photodiodes with PN junction on both front and back sides
KR20090128900A (ko) * 2008-06-11 2009-12-16 크로스텍 캐피탈, 엘엘씨 Ｃｏｍｓ 이미지 센서의 제조방법
US8399909B2 (en) 2009-05-12 2013-03-19 Osi Optoelectronics, Inc. Tetra-lateral position sensing detector
JP7070848B2 (ja) * 2018-07-26 2022-05-18 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4995049A (en) * 1990-05-29 1991-02-19 Eastman Kodak Company Optoelectronic integrated circuit
JPH05267292A (ja) * 1992-03-19 1993-10-15 Fujitsu Ltd 半導体装置の製造方法
US5747879A (en) * 1995-09-29 1998-05-05 Intel Corporation Interface between titanium and aluminum-alloy in metal stack for integrated circuit
US5700718A (en) * 1996-02-05 1997-12-23 Micron Technology, Inc. Method for increased metal interconnect reliability in situ formation of titanium aluminide
US5838052A (en) * 1996-03-07 1998-11-17 Micron Technology, Inc. Reducing reflectivity on a semiconductor wafer by annealing titanium and aluminum
JPH09289212A (ja) * 1996-04-19 1997-11-04 Ricoh Co Ltd 半導体装置の積層配線およびその製造方法
JP3500308B2 (ja) * 1997-08-13 2004-02-23 インターナショナル・ビジネス・マシーンズ・コーポレーション 集積回路
JPH11214506A (ja) * 1998-01-20 1999-08-06 Nec Corp 半導体装置及びその製造方法

Similar Documents

Publication Publication Date Title
WO2004058087A3 (en) Vapor deposited titanium and titanium-nitride layers for dental devices
WO2002092872A3 (en) Honeycomb structure thermal barrier coating
EP0877421A3 (en) Sputter deposition and annealing of copper alloy metallization M
MXPA03003792A (es) Producto de cobresoldadura con temperatura de fusion baja.
EP1122775A3 (en) Treatment of a metal nitride/metal stack
JP2009174048A5 (ja) 蒸着用基板、蒸着用基板の作製方法、および蒸着方法
WO2002103782A3 (en) Barrier enhancement process for copper interconnects
CA2242619A1 (en) Process for applying protective and decorative coating on an article
EP2338373A3 (en) Decorative article having white coating and method for manufacture thereof
MY140214A (en) Appliance transparency
CA2456949A1 (en) Formable bright, reflecttive film having discontinuous metallic layers
JP2007519037A5 (enExample)
EP1096026A3 (en) Method of manufacturing thin metal alloy foils
RU2006123417A (ru) Слоистая структура
ES2192891T3 (es) Mejoras introducidas en el revestimiento de vidrio.
WO2006085995A3 (en) Method of producing metal article having internal passage coated with a ceramic coating
JP2020097213A (ja) 銀面を有する基材に対する曇りから銀を保護する層を接着させて材料を作る方法
JP2002151515A5 (enExample)
RU2004119441A (ru) Титановый материал, способ его производства и выхлопная труба
JP2008516015A5 (enExample)
JP2005536640A5 (enExample)
WO2006014796A3 (en) Conductive element and method of making
TW200609380A (en) Method of making a corrosion-resistant non-stick coating
WO2020058130A1 (fr) Substrat comprenant une surface argentée protégée contre le ternissement de l'argent et procédé de fabrication d'un tel substrat
RU2004101675A (ru) Способ получения многослойного покрытия для режущего инструмента