JP2002151515A - チタン／アルミニウム合金を用いた集積回路金属被着膜 - Google Patents

チタン／アルミニウム合金を用いた集積回路金属被着膜

Info

Publication number
JP2002151515A
JP2002151515A JP2001326119A JP2001326119A JP2002151515A JP 2002151515 A JP2002151515 A JP 2002151515A JP 2001326119 A JP2001326119 A JP 2001326119A JP 2001326119 A JP2001326119 A JP 2001326119A JP 2002151515 A JP2002151515 A JP 2002151515A
Authority
JP
Japan
Prior art keywords
layer
titanium
integrated circuit
aluminum
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001326119A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002151515A5 (enExample
Inventor
Ricky D Snyder
リッキー・ディー・シュナイダー
Robert G Long
ロバート・ジー・ロング
David W Hula
デビッド・ダブリュウ・フラ
Mark D Crook
マーク・ディー・クローク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of JP2002151515A publication Critical patent/JP2002151515A/ja
Publication of JP2002151515A5 publication Critical patent/JP2002151515A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/064—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/097—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by thermally treating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2001326119A 2000-10-27 2001-10-24 チタン／アルミニウム合金を用いた集積回路金属被着膜 Pending JP2002151515A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US698459 2000-10-27
US09/698,459 US6646346B1 (en) 2000-10-27 2000-10-27 Integrated circuit metallization using a titanium/aluminum alloy

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006250729A Division JP4636414B2 (ja) 2000-10-27 2006-09-15 チタン／アルミニウム合金を用いた集積回路金属被着膜

Publications (2)

Publication Number Publication Date
JP2002151515A true JP2002151515A (ja) 2002-05-24
JP2002151515A5 JP2002151515A5 (enExample) 2005-06-30

Family

ID=24805338

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2001326119A Pending JP2002151515A (ja) 2000-10-27 2001-10-24 チタン／アルミニウム合金を用いた集積回路金属被着膜
JP2006250729A Expired - Lifetime JP4636414B2 (ja) 2000-10-27 2006-09-15 チタン／アルミニウム合金を用いた集積回路金属被着膜

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2006250729A Expired - Lifetime JP4636414B2 (ja) 2000-10-27 2006-09-15 チタン／アルミニウム合金を用いた集積回路金属被着膜

Country Status (4)

Country Link
US (2) US6646346B1 (enExample)
JP (2) JP2002151515A (enExample)
DE (1) DE10152913A1 (enExample)
SG (1) SG115421A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020017647A (ja) * 2018-07-26 2020-01-30 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7121997B2 (en) * 1999-06-09 2006-10-17 Ethicon, Inc. Surgical instrument and method for treating female urinary incontinence
US7001841B2 (en) * 2002-08-26 2006-02-21 Matsushita Electric Industrial Co., Ltd. Production method of semiconductor device
US8035183B2 (en) * 2003-05-05 2011-10-11 Udt Sensors, Inc. Photodiodes with PN junction on both front and back sides
KR20090128900A (ko) * 2008-06-11 2009-12-16 크로스텍 캐피탈, 엘엘씨 Ｃｏｍｓ 이미지 센서의 제조방법
US8399909B2 (en) 2009-05-12 2013-03-19 Osi Optoelectronics, Inc. Tetra-lateral position sensing detector

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4995049A (en) * 1990-05-29 1991-02-19 Eastman Kodak Company Optoelectronic integrated circuit
JPH05267292A (ja) * 1992-03-19 1993-10-15 Fujitsu Ltd 半導体装置の製造方法
US5747879A (en) * 1995-09-29 1998-05-05 Intel Corporation Interface between titanium and aluminum-alloy in metal stack for integrated circuit
US5700718A (en) * 1996-02-05 1997-12-23 Micron Technology, Inc. Method for increased metal interconnect reliability in situ formation of titanium aluminide
US5838052A (en) * 1996-03-07 1998-11-17 Micron Technology, Inc. Reducing reflectivity on a semiconductor wafer by annealing titanium and aluminum
JPH09289212A (ja) * 1996-04-19 1997-11-04 Ricoh Co Ltd 半導体装置の積層配線およびその製造方法
JP3500308B2 (ja) * 1997-08-13 2004-02-23 インターナショナル・ビジネス・マシーンズ・コーポレーション 集積回路
JPH11214506A (ja) * 1998-01-20 1999-08-06 Nec Corp 半導体装置及びその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020017647A (ja) * 2018-07-26 2020-01-30 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
JP7070848B2 (ja) 2018-07-26 2022-05-18 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
US11626323B2 (en) 2018-07-26 2023-04-11 Sumitomo Electric Device Innovations, Inc. Semiconductor device

Also Published As

Publication number Publication date
SG115421A1 (en) 2005-10-28
DE10152913A1 (de) 2002-05-29
JP2007110103A (ja) 2007-04-26
JP4636414B2 (ja) 2011-02-23
US6903017B2 (en) 2005-06-07
US6646346B1 (en) 2003-11-11
US20040038453A1 (en) 2004-02-26

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