JP2002151465A5 - - Google Patents
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- Publication number
- JP2002151465A5 JP2002151465A5 JP2000349027A JP2000349027A JP2002151465A5 JP 2002151465 A5 JP2002151465 A5 JP 2002151465A5 JP 2000349027 A JP2000349027 A JP 2000349027A JP 2000349027 A JP2000349027 A JP 2000349027A JP 2002151465 A5 JP2002151465 A5 JP 2002151465A5
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- JP
- Japan
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Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000349027A JP4437611B2 (ja) | 2000-11-16 | 2000-11-16 | 半導体装置の製造方法 |
| US09/826,038 US20020056700A1 (en) | 2000-11-16 | 2001-04-05 | Method and system for manufacturing semiconductor device |
| TW090116345A TW507266B (en) | 2000-11-16 | 2001-07-04 | Method and system for manufacturing semiconductor device |
| KR10-2001-0041821A KR100437221B1 (ko) | 2000-11-16 | 2001-07-12 | 반도체 장치의 제조 방법 및 제조 시스템, 및 반도체 장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000349027A JP4437611B2 (ja) | 2000-11-16 | 2000-11-16 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002151465A JP2002151465A (ja) | 2002-05-24 |
| JP2002151465A5 true JP2002151465A5 (xx) | 2007-12-20 |
| JP4437611B2 JP4437611B2 (ja) | 2010-03-24 |
Family
ID=18822503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000349027A Expired - Fee Related JP4437611B2 (ja) | 2000-11-16 | 2000-11-16 | 半導体装置の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20020056700A1 (xx) |
| JP (1) | JP4437611B2 (xx) |
| KR (1) | KR100437221B1 (xx) |
| TW (1) | TW507266B (xx) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004021405A2 (en) * | 2002-08-28 | 2004-03-11 | Tokyo Electron Limited | Method and system for dynamic modeling and recipe optimization of semiconductor etch processes |
| US6842661B2 (en) * | 2002-09-30 | 2005-01-11 | Advanced Micro Devices, Inc. | Process control at an interconnect level |
| US7265382B2 (en) * | 2002-11-12 | 2007-09-04 | Applied Materials, Inc. | Method and apparatus employing integrated metrology for improved dielectric etch efficiency |
| JP2004319574A (ja) * | 2003-04-11 | 2004-11-11 | Trecenti Technologies Inc | 半導体装置の製造方法、半導体製造装置の自動運転方法および自動運転システム、並びにｃｍｐ装置の自動運転方法 |
| US8257546B2 (en) * | 2003-04-11 | 2012-09-04 | Applied Materials, Inc. | Method and system for monitoring an etch process |
| EP1652224A2 (en) * | 2003-07-31 | 2006-05-03 | FSI International, Inc. | Controlled growth of highly uniform, oxide layers, especially ultrathin layers |
| TW200517192A (en) * | 2003-09-11 | 2005-06-01 | Fsi Int Inc | Semiconductor wafer immersion systems and treatments using modulated acoustic energy |
| US20050072625A1 (en) * | 2003-09-11 | 2005-04-07 | Christenson Kurt K. | Acoustic diffusers for acoustic field uniformity |
| JP2006245036A (ja) * | 2005-02-28 | 2006-09-14 | Seiko Epson Corp | 素子分離層の形成方法及び電子デバイスの製造方法、ｃｍｐ装置 |
| JP4305401B2 (ja) * | 2005-02-28 | 2009-07-29 | セイコーエプソン株式会社 | 半導体装置 |
| US7596421B2 (en) | 2005-06-21 | 2009-09-29 | Kabushik Kaisha Toshiba | Process control system, process control method, and method of manufacturing electronic apparatus |
| US8070972B2 (en) * | 2006-03-30 | 2011-12-06 | Tokyo Electron Limited | Etching method and etching apparatus |
| JP4990548B2 (ja) | 2006-04-07 | 2012-08-01 | 株式会社日立製作所 | 半導体装置の製造方法 |
| JP5076426B2 (ja) | 2006-09-29 | 2012-11-21 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| JP4971050B2 (ja) | 2007-06-21 | 2012-07-11 | 株式会社日立製作所 | 半導体装置の寸法測定装置 |
| JP5401797B2 (ja) | 2008-02-06 | 2014-01-29 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法及び半導体装置製造システム |
| JP2010087300A (ja) * | 2008-09-30 | 2010-04-15 | Toshiba Corp | 半導体装置の製造方法 |
| JP5853382B2 (ja) * | 2011-03-11 | 2016-02-09 | ソニー株式会社 | 半導体装置の製造方法、及び電子機器の製造方法 |
| US9005464B2 (en) * | 2011-06-27 | 2015-04-14 | International Business Machines Corporation | Tool for manufacturing semiconductor structures and method of use |
| CN104409348B (zh) * | 2014-11-10 | 2017-08-08 | 成都士兰半导体制造有限公司 | 沟槽器件的制作方法 |
| KR102281413B1 (ko) * | 2017-05-15 | 2021-07-23 | 미쓰비시덴키 가부시키가이샤 | 반도체 장치의 제조 방법 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6060731A (ja) * | 1983-09-14 | 1985-04-08 | Hitachi Ltd | 半導体装置の製法 |
| US5399229A (en) * | 1993-05-13 | 1995-03-21 | Texas Instruments Incorporated | System and method for monitoring and evaluating semiconductor wafer fabrication |
| KR19980014172A (ko) * | 1996-08-08 | 1998-05-15 | 김광호 | 반도체 제조공정의 오버레이 측정방법 |
| JP2867982B2 (ja) * | 1996-11-29 | 1999-03-10 | 日本電気株式会社 | 半導体装置の製造装置 |
| US6148239A (en) * | 1997-12-12 | 2000-11-14 | Advanced Micro Devices, Inc. | Process control system using feed forward control threads based on material groups |
| KR100251279B1 (ko) * | 1997-12-26 | 2000-04-15 | 윤종용 | 반도체 제조용 증착설비의 막두께 조절방법 |
| KR100382021B1 (ko) * | 2000-02-03 | 2003-04-26 | 가부시끼가이샤 도시바 | 반도체 장치 제조 방법, 반도체 장치 제조 지원 시스템, 및 반도체 장치 제조 시스템 |
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2000
- 2000-11-16 JP JP2000349027A patent/JP4437611B2/ja not_active Expired - Fee Related
-
2001
- 2001-04-05 US US09/826,038 patent/US20020056700A1/en not_active Abandoned
- 2001-07-04 TW TW090116345A patent/TW507266B/zh not_active IP Right Cessation
- 2001-07-12 KR KR10-2001-0041821A patent/KR100437221B1/ko not_active IP Right Cessation