JP2002151465A5 - - Google Patents
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- Publication number
- JP2002151465A5 JP2002151465A5 JP2000349027A JP2000349027A JP2002151465A5 JP 2002151465 A5 JP2002151465 A5 JP 2002151465A5 JP 2000349027 A JP2000349027 A JP 2000349027A JP 2000349027 A JP2000349027 A JP 2000349027A JP 2002151465 A5 JP2002151465 A5 JP 2002151465A5
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Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000349027A JP4437611B2 (ja) | 2000-11-16 | 2000-11-16 | 半導体装置の製造方法 |
| US09/826,038 US20020056700A1 (en) | 2000-11-16 | 2001-04-05 | Method and system for manufacturing semiconductor device |
| TW090116345A TW507266B (en) | 2000-11-16 | 2001-07-04 | Method and system for manufacturing semiconductor device |
| KR10-2001-0041821A KR100437221B1 (ko) | 2000-11-16 | 2001-07-12 | 반도체 장치의 제조 방법 및 제조 시스템, 및 반도체 장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000349027A JP4437611B2 (ja) | 2000-11-16 | 2000-11-16 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002151465A JP2002151465A (ja) | 2002-05-24 |
| JP2002151465A5 true JP2002151465A5 (en:Method) | 2007-12-20 |
| JP4437611B2 JP4437611B2 (ja) | 2010-03-24 |
Family
ID=18822503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000349027A Expired - Fee Related JP4437611B2 (ja) | 2000-11-16 | 2000-11-16 | 半導体装置の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20020056700A1 (en:Method) |
| JP (1) | JP4437611B2 (en:Method) |
| KR (1) | KR100437221B1 (en:Method) |
| TW (1) | TW507266B (en:Method) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006518925A (ja) * | 2002-08-28 | 2006-08-17 | 東京エレクトロン株式会社 | 半導体エッチング処理の力学的モデル化及び手法最適化のための方法およびシステム |
| US6842661B2 (en) * | 2002-09-30 | 2005-01-11 | Advanced Micro Devices, Inc. | Process control at an interconnect level |
| US7265382B2 (en) * | 2002-11-12 | 2007-09-04 | Applied Materials, Inc. | Method and apparatus employing integrated metrology for improved dielectric etch efficiency |
| US8257546B2 (en) | 2003-04-11 | 2012-09-04 | Applied Materials, Inc. | Method and system for monitoring an etch process |
| JP2004319574A (ja) * | 2003-04-11 | 2004-11-11 | Trecenti Technologies Inc | 半導体装置の製造方法、半導体製造装置の自動運転方法および自動運転システム、並びにｃｍｐ装置の自動運転方法 |
| JP2007500941A (ja) * | 2003-07-31 | 2007-01-18 | エフエスアイ インターナショナル インコーポレイテッド | 高度に均一な酸化物層、とりわけ超薄層の調節された成長 |
| EP1663534A1 (en) * | 2003-09-11 | 2006-06-07 | FSI International, Inc. | Acoustic diffusers for acoustic field uniformity |
| TW200517192A (en) * | 2003-09-11 | 2005-06-01 | Fsi Int Inc | Semiconductor wafer immersion systems and treatments using modulated acoustic energy |
| JP4305401B2 (ja) * | 2005-02-28 | 2009-07-29 | セイコーエプソン株式会社 | 半導体装置 |
| JP2006245036A (ja) * | 2005-02-28 | 2006-09-14 | Seiko Epson Corp | 素子分離層の形成方法及び電子デバイスの製造方法、ｃｍｐ装置 |
| US7596421B2 (en) | 2005-06-21 | 2009-09-29 | Kabushik Kaisha Toshiba | Process control system, process control method, and method of manufacturing electronic apparatus |
| US8070972B2 (en) * | 2006-03-30 | 2011-12-06 | Tokyo Electron Limited | Etching method and etching apparatus |
| JP4990548B2 (ja) | 2006-04-07 | 2012-08-01 | 株式会社日立製作所 | 半導体装置の製造方法 |
| JP5076426B2 (ja) * | 2006-09-29 | 2012-11-21 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| JP4971050B2 (ja) | 2007-06-21 | 2012-07-11 | 株式会社日立製作所 | 半導体装置の寸法測定装置 |
| JP5401797B2 (ja) | 2008-02-06 | 2014-01-29 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法及び半導体装置製造システム |
| JP2010087300A (ja) * | 2008-09-30 | 2010-04-15 | Toshiba Corp | 半導体装置の製造方法 |
| JP5853382B2 (ja) * | 2011-03-11 | 2016-02-09 | ソニー株式会社 | 半導体装置の製造方法、及び電子機器の製造方法 |
| US9005464B2 (en) * | 2011-06-27 | 2015-04-14 | International Business Machines Corporation | Tool for manufacturing semiconductor structures and method of use |
| CN104409348B (zh) * | 2014-11-10 | 2017-08-08 | 成都士兰半导体制造有限公司 | 沟槽器件的制作方法 |
| WO2018211568A1 (ja) * | 2017-05-15 | 2018-11-22 | 三菱電機株式会社 | 半導体装置の製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6060731A (ja) * | 1983-09-14 | 1985-04-08 | Hitachi Ltd | 半導体装置の製法 |
| US5399229A (en) * | 1993-05-13 | 1995-03-21 | Texas Instruments Incorporated | System and method for monitoring and evaluating semiconductor wafer fabrication |
| KR19980014172A (ko) * | 1996-08-08 | 1998-05-15 | 김광호 | 반도체 제조공정의 오버레이 측정방법 |
| JP2867982B2 (ja) * | 1996-11-29 | 1999-03-10 | 日本電気株式会社 | 半導体装置の製造装置 |
| US6148239A (en) * | 1997-12-12 | 2000-11-14 | Advanced Micro Devices, Inc. | Process control system using feed forward control threads based on material groups |
| KR100251279B1 (ko) * | 1997-12-26 | 2000-04-15 | 윤종용 | 반도체 제조용 증착설비의 막두께 조절방법 |
| KR100382021B1 (ko) * | 2000-02-03 | 2003-04-26 | 가부시끼가이샤 도시바 | 반도체 장치 제조 방법, 반도체 장치 제조 지원 시스템, 및 반도체 장치 제조 시스템 |
-
2000
- 2000-11-16 JP JP2000349027A patent/JP4437611B2/ja not_active Expired - Fee Related
-
2001
- 2001-04-05 US US09/826,038 patent/US20020056700A1/en not_active Abandoned
- 2001-07-04 TW TW090116345A patent/TW507266B/zh not_active IP Right Cessation
- 2001-07-12 KR KR10-2001-0041821A patent/KR100437221B1/ko not_active Expired - Fee Related