JP2002100689A - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置

Info

Publication number
JP2002100689A
JP2002100689A JP2000289129A JP2000289129A JP2002100689A JP 2002100689 A JP2002100689 A JP 2002100689A JP 2000289129 A JP2000289129 A JP 2000289129A JP 2000289129 A JP2000289129 A JP 2000289129A JP 2002100689 A JP2002100689 A JP 2002100689A
Authority
JP
Japan
Prior art keywords
stripes
wiring layer
memory cell
regions
metal wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000289129A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002100689A5 (enExample
Inventor
Seiichi Mori
誠一 森
Shigeru Atsumi
滋 渥美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000289129A priority Critical patent/JP2002100689A/ja
Priority to US09/956,876 priority patent/US6642569B2/en
Publication of JP2002100689A publication Critical patent/JP2002100689A/ja
Priority to US10/661,520 priority patent/US7002203B2/en
Publication of JP2002100689A5 publication Critical patent/JP2002100689A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2000289129A 2000-09-22 2000-09-22 不揮発性半導体記憶装置 Pending JP2002100689A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000289129A JP2002100689A (ja) 2000-09-22 2000-09-22 不揮発性半導体記憶装置
US09/956,876 US6642569B2 (en) 2000-09-22 2001-09-21 Semiconductor memory with nonvolatile memory cell array and semiconductor device with nonvolatile memory cell array and logic device
US10/661,520 US7002203B2 (en) 2000-09-22 2003-09-15 Semiconductor memory with nonvolatile memory cell array and semiconductor device with nonvolatile memory cell array and logic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000289129A JP2002100689A (ja) 2000-09-22 2000-09-22 不揮発性半導体記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007312532A Division JP2008113017A (ja) 2007-12-03 2007-12-03 半導体装置

Publications (2)

Publication Number Publication Date
JP2002100689A true JP2002100689A (ja) 2002-04-05
JP2002100689A5 JP2002100689A5 (enExample) 2005-08-11

Family

ID=18772591

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000289129A Pending JP2002100689A (ja) 2000-09-22 2000-09-22 不揮発性半導体記憶装置

Country Status (2)

Country Link
US (2) US6642569B2 (enExample)
JP (1) JP2002100689A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005322912A (ja) * 2004-05-06 2005-11-17 Samsung Electronics Co Ltd スプリットゲート型フラッシュメモリ素子及びその製造方法
WO2006059376A1 (ja) * 2004-11-30 2006-06-08 Spansion Llc 半導体メモリ及びその製造方法
US7488657B2 (en) 2005-06-17 2009-02-10 Spansion Llc Method and system for forming straight word lines in a flash memory array
JP2010073981A (ja) * 2008-09-19 2010-04-02 Spansion Llc 半導体記憶装置およびその読出方法
US9331180B2 (en) 2004-10-29 2016-05-03 Cypress Semiconductor Corporation Semiconductor device and method for fabricating thereof

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6703661B2 (en) * 2001-12-27 2004-03-09 Ching-Yuan Wu Contactless NOR-type memory array and its fabrication methods
JP4011344B2 (ja) * 2001-12-28 2007-11-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
DE10239490B3 (de) * 2002-08-28 2004-04-29 Infineon Technologies Ag Halbleiterspeicher
JP2005191542A (ja) * 2003-12-01 2005-07-14 Renesas Technology Corp 半導体記憶装置
FR2863767B1 (fr) * 2003-12-12 2006-06-09 Commissariat Energie Atomique Support memoire irreversible a deformation plastique et procede de realisation d'un tel support
JP2006054283A (ja) * 2004-08-11 2006-02-23 Nec Electronics Corp 不揮発性半導体記憶装置，及びその製造方法
DE102004055929B4 (de) * 2004-11-19 2014-05-22 Qimonda Ag Nichtflüchtige Speicherzellen-Anordnung
KR100640620B1 (ko) * 2004-12-27 2006-11-02 삼성전자주식회사 트윈비트 셀 구조의 ｎｏｒ형 플래쉬 메모리 소자 및 그제조 방법
US7859026B2 (en) * 2006-03-16 2010-12-28 Spansion Llc Vertical semiconductor device
US8649209B1 (en) * 2011-03-25 2014-02-11 Altera Corporation Memory element circuitry with reduced oxide definition width
US9991158B2 (en) * 2014-09-12 2018-06-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, layout of semiconductor device, and method of manufacturing semiconductor device
CN111223511A (zh) * 2019-12-30 2020-06-02 深圳市芯天下技术有限公司 一种存储器及其存储单元

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05259475A (ja) * 1991-12-12 1993-10-08 Intel Corp メモリセルのアレイを含む電気的にプログラム可能な読出し専用メモリ装置をシリコン基板に製造する方法
JPH08264737A (ja) * 1995-03-13 1996-10-11 Samsung Electron Co Ltd 不揮発性メモリ素子及びその製造方法
JPH09129844A (ja) * 1995-10-27 1997-05-16 Hitachi Ltd 半導体集積回路装置及び当該装置の製造方法
JPH1154731A (ja) * 1997-07-31 1999-02-26 Nec Corp 半導体装置
JPH11195772A (ja) * 1997-12-26 1999-07-21 Samsung Electron Co Ltd 不揮発性メモリ装置及びその製造方法
JP2000252448A (ja) * 1999-03-01 2000-09-14 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JP2002057230A (ja) * 2000-08-11 2002-02-22 Toshiba Corp 不揮発性半導体記憶装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2635810B2 (ja) 1990-09-28 1997-07-30 株式会社東芝 半導体記憶装置
US5293512A (en) * 1991-02-13 1994-03-08 Nec Corporation Semiconductor device having a groove type isolation region
US6201275B1 (en) * 1995-06-30 2001-03-13 Nippon Steel Corporation Semiconductor device having semiconductor regions of different conductivity types isolated by field oxide, and method of manufacturing the same
JPH0982924A (ja) 1995-09-14 1997-03-28 Toshiba Corp 半導体記憶装置の製造方法
JP3171122B2 (ja) * 1995-11-27 2001-05-28 ソニー株式会社 半導体記憶装置および半導体記憶装置の情報読出方法
JP3474758B2 (ja) * 1998-02-16 2003-12-08 株式会社東芝 不揮発性半導体記憶装置
TW409428B (en) * 1998-03-20 2000-10-21 Seiko Epson Corp Non-volatile semiconductor memory apparatus and the manufacture method thereof
US6060741A (en) * 1998-09-16 2000-05-09 Advanced Micro Devices, Inc. Stacked gate structure for flash memory application

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05259475A (ja) * 1991-12-12 1993-10-08 Intel Corp メモリセルのアレイを含む電気的にプログラム可能な読出し専用メモリ装置をシリコン基板に製造する方法
JPH08264737A (ja) * 1995-03-13 1996-10-11 Samsung Electron Co Ltd 不揮発性メモリ素子及びその製造方法
JPH09129844A (ja) * 1995-10-27 1997-05-16 Hitachi Ltd 半導体集積回路装置及び当該装置の製造方法
JPH1154731A (ja) * 1997-07-31 1999-02-26 Nec Corp 半導体装置
JPH11195772A (ja) * 1997-12-26 1999-07-21 Samsung Electron Co Ltd 不揮発性メモリ装置及びその製造方法
JP2000252448A (ja) * 1999-03-01 2000-09-14 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JP2002057230A (ja) * 2000-08-11 2002-02-22 Toshiba Corp 不揮発性半導体記憶装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005322912A (ja) * 2004-05-06 2005-11-17 Samsung Electronics Co Ltd スプリットゲート型フラッシュメモリ素子及びその製造方法
US9331180B2 (en) 2004-10-29 2016-05-03 Cypress Semiconductor Corporation Semiconductor device and method for fabricating thereof
WO2006059376A1 (ja) * 2004-11-30 2006-06-08 Spansion Llc 半導体メモリ及びその製造方法
GB2434919A (en) * 2004-11-30 2007-08-08 Spansion Llc Semiconductor memory and manufacturing method thereof
JPWO2006059376A1 (ja) * 2004-11-30 2008-06-05 スパンション エルエルシー 半導体メモリ及びその製造方法
GB2434919B (en) * 2004-11-30 2010-05-05 Spansion Llc Semiconductor memory and manufacturing method thereof
US7736953B2 (en) 2004-11-30 2010-06-15 Spansion Llc Semiconductor memory and method of fabricating the same
JP5014802B2 (ja) * 2004-11-30 2012-08-29 スパンション エルエルシー 半導体メモリ及びその製造方法
US7488657B2 (en) 2005-06-17 2009-02-10 Spansion Llc Method and system for forming straight word lines in a flash memory array
US7851306B2 (en) 2005-06-17 2010-12-14 Spansion Llc Method for forming a flash memory device with straight word lines
JP2010073981A (ja) * 2008-09-19 2010-04-02 Spansion Llc 半導体記憶装置およびその読出方法

Also Published As

Publication number Publication date
US7002203B2 (en) 2006-02-21
US6642569B2 (en) 2003-11-04
US20020036927A1 (en) 2002-03-28
US20050111269A1 (en) 2005-05-26

Similar Documents

Publication Publication Date Title
US6285584B1 (en) Method to implement flash memory
US5793079A (en) Single transistor non-volatile electrically alterable semiconductor memory device
JP2921653B2 (ja) トレンチ・メモリ構造及びこれの製造方法
JP2002100689A (ja) 不揮発性半導体記憶装置
JPH0567791A (ja) 電気的に書込および消去可能な半導体記憶装置およびその製造方法
KR19990006718A (ko) 불휘발성 반도체 기억장치 및 그 제조 방법
US20100155814A1 (en) Eeprom array with well contacts
US5414286A (en) Nonvolatile memory, method of fabricating the same, and method of reading information from the same
KR100754541B1 (ko) 메모리 셀, 메모리, 메모리 셀 제조 방법, 메모리 제조방법, 메모리 셀의 프로그래밍 또는 디프로그래밍 방법 및메모리 셀 판독 방법
US8207611B2 (en) Semiconductor device and fabrication method thereof
JPH09213911A (ja) 半導体装置及びその製造方法
US20020055228A1 (en) Sidewall process to improve the flash memory cell performance
US6071779A (en) Source line fabrication process for flash memory
US7180788B2 (en) Nonvolatile semiconductor memory device
JP2003051557A (ja) 不揮発性半導体記憶装置
US20120025293A1 (en) Semiconductor memory device having a floating gate and a control gate and method of manufacturing the same
JP4031167B2 (ja) 不揮発性半導体記憶装置
JP2875544B2 (ja) 半導体記憶装置
US6414346B1 (en) Semiconductor memory and manufacturing method thereof
US8390076B2 (en) Semiconductor device and manufacturing method thereof
US20110059585A1 (en) Nonvolatile memory device and fabrication method
JP3393911B2 (ja) 不揮発性半導体記憶装置の製造方法
US6498030B2 (en) Surrounding-gate flash memory having a self-aligned control gate
JP2008113017A (ja) 半導体装置
US20070045705A1 (en) Floating-gate non-volatile memory and method of fabricating the same

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050118

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050118

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070627

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070710

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070905

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20071002

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071203

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20071221

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20080307