JP2002094064A - 薄膜トランジスタ、薄膜トランジスタの製造方法、液晶表示装置およびエレクトロルミネッセンス表示装置 - Google Patents
薄膜トランジスタ、薄膜トランジスタの製造方法、液晶表示装置およびエレクトロルミネッセンス表示装置Info
- Publication number
- JP2002094064A JP2002094064A JP2000274620A JP2000274620A JP2002094064A JP 2002094064 A JP2002094064 A JP 2002094064A JP 2000274620 A JP2000274620 A JP 2000274620A JP 2000274620 A JP2000274620 A JP 2000274620A JP 2002094064 A JP2002094064 A JP 2002094064A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- film transistor
- electrode
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 90
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims description 57
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 34
- 238000005401 electroluminescence Methods 0.000 title claims description 4
- 239000010408 film Substances 0.000 claims abstract description 275
- 239000004065 semiconductor Substances 0.000 claims abstract description 87
- 239000010410 layer Substances 0.000 claims abstract description 34
- 239000011229 interlayer Substances 0.000 claims abstract description 12
- 239000012212 insulator Substances 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims description 39
- 239000002184 metal Substances 0.000 claims description 39
- 238000005530 etching Methods 0.000 claims description 32
- 239000012535 impurity Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 15
- 230000001681 protective effect Effects 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 229910021332 silicide Inorganic materials 0.000 claims description 11
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 11
- 229910052750 molybdenum Inorganic materials 0.000 claims description 10
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 3
- 239000007795 chemical reaction product Substances 0.000 claims 4
- 239000004020 conductor Substances 0.000 claims 3
- 238000010030 laminating Methods 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract 2
- 238000000206 photolithography Methods 0.000 description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 239000010936 titanium Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000005611 electricity Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 230000003068 static effect Effects 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 5
- 238000007687 exposure technique Methods 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920002098 polyfluorene Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- FMXSYRBHGUMFBA-UHFFFAOYSA-N 6-amino-3-azaniumylidene-9-[2-carboxy-4-[6-[4-[4-[4-[4-[3-carboxy-6-[4-(trifluoromethyl)phenyl]naphthalen-1-yl]phenyl]piperidin-1-yl]butyl]triazol-1-yl]hexylcarbamoyl]phenyl]-5-sulfoxanthene-4-sulfonate Chemical compound Nc1ccc2c(-c3ccc(cc3C(O)=O)C(=O)NCCCCCCn3cc(CCCCN4CCC(CC4)c4ccc(cc4)-c4cc(cc5cc(ccc45)-c4ccc(cc4)C(F)(F)F)C(O)=O)nn3)c3ccc(=[NH2+])c(c3oc2c1S(O)(=O)=O)S([O-])(=O)=O FMXSYRBHGUMFBA-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 102100032244 Dynein axonemal heavy chain 1 Human genes 0.000 description 1
- 101001016198 Homo sapiens Dynein axonemal heavy chain 1 Proteins 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 101000783705 Myxoma virus (strain Uriarra) Envelope protein A28 homolog Proteins 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- -1 polyphenylvinylene Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000274620A JP2002094064A (ja) | 2000-09-11 | 2000-09-11 | 薄膜トランジスタ、薄膜トランジスタの製造方法、液晶表示装置およびエレクトロルミネッセンス表示装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000274620A JP2002094064A (ja) | 2000-09-11 | 2000-09-11 | 薄膜トランジスタ、薄膜トランジスタの製造方法、液晶表示装置およびエレクトロルミネッセンス表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002094064A true JP2002094064A (ja) | 2002-03-29 |
| JP2002094064A5 JP2002094064A5 (zh) | 2005-09-08 |
Family
ID=18760353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000274620A Pending JP2002094064A (ja) | 2000-09-11 | 2000-09-11 | 薄膜トランジスタ、薄膜トランジスタの製造方法、液晶表示装置およびエレクトロルミネッセンス表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002094064A (zh) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100412121B1 (ko) * | 2001-03-31 | 2003-12-31 | 비오이 하이디스 테크놀로지 주식회사 | 박막 트랜지스터의 제조방법 |
| JP2007199708A (ja) * | 2005-12-28 | 2007-08-09 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法 |
| JP2008009372A (ja) * | 2006-06-29 | 2008-01-17 | Lg Philips Lcd Co Ltd | 液晶表示装置及びその製造方法 |
| JP2008015460A (ja) * | 2006-06-30 | 2008-01-24 | Lg Philips Lcd Co Ltd | 液晶表示装置の製造方法及び液晶表示装置 |
| JP2008015455A (ja) * | 2006-06-30 | 2008-01-24 | Lg Phillips Lcd Co Ltd | 液晶表示装置及びその製造方法 |
| JP2009054836A (ja) * | 2007-08-28 | 2009-03-12 | Mitsubishi Electric Corp | Ｔｆｔ基板及びその製造方法 |
| JP2009271527A (ja) * | 2008-05-06 | 2009-11-19 | Samsung Mobile Display Co Ltd | 平板表示装置用の薄膜トランジスタアレイ基板、それを備える有機発光表示装置、及びそれらの製造方法 |
| JP2010098280A (ja) * | 2008-02-22 | 2010-04-30 | Toppan Printing Co Ltd | 透明薄膜トランジスタ及び画像表示装置 |
| KR101338106B1 (ko) * | 2006-06-30 | 2013-12-06 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
| KR101338108B1 (ko) * | 2006-12-14 | 2013-12-06 | 엘지디스플레이 주식회사 | 액정표시장치의 제조방법 |
| US8634044B2 (en) | 2005-12-28 | 2014-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01255830A (ja) * | 1988-04-05 | 1989-10-12 | Nec Corp | 液晶表示装置の配線の製造方法と液晶表示装置の配線 |
| JPH0234970A (ja) * | 1988-07-25 | 1990-02-05 | Sony Corp | 電界効果型薄膜トランジスタ |
| JPH02245739A (ja) * | 1989-03-20 | 1990-10-01 | Hitachi Ltd | 液晶表示装置 |
| JPH03129326A (ja) * | 1989-10-13 | 1991-06-03 | Hitachi Ltd | 表示装置 |
| JPH03216996A (ja) * | 1990-01-19 | 1991-09-24 | Matsushita Electron Corp | 画像表示装置 |
| JPH04278928A (ja) * | 1991-03-07 | 1992-10-05 | Sharp Corp | アクティブマトリクス基板 |
| JPH053318A (ja) * | 1991-06-26 | 1993-01-08 | Stanley Electric Co Ltd | 薄膜トランジスタと薄膜トランジスタの製造方法 |
| JPH06169086A (ja) * | 1992-11-30 | 1994-06-14 | Sanyo Electric Co Ltd | 多結晶シリコン薄膜トランジスタ |
| JPH0778992A (ja) * | 1993-09-07 | 1995-03-20 | Fujitsu Ltd | 薄膜トランジスタ及びその製造方法 |
| JPH07142735A (ja) * | 1993-11-12 | 1995-06-02 | Sanyo Electric Co Ltd | 薄膜トランジスタの製造方法及び薄膜トランジスタ |
| JPH11281992A (ja) * | 1998-03-31 | 1999-10-15 | Sharp Corp | 液晶表示装置及びその製造方法 |
-
2000
- 2000-09-11 JP JP2000274620A patent/JP2002094064A/ja active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01255830A (ja) * | 1988-04-05 | 1989-10-12 | Nec Corp | 液晶表示装置の配線の製造方法と液晶表示装置の配線 |
| JPH0234970A (ja) * | 1988-07-25 | 1990-02-05 | Sony Corp | 電界効果型薄膜トランジスタ |
| JPH02245739A (ja) * | 1989-03-20 | 1990-10-01 | Hitachi Ltd | 液晶表示装置 |
| JPH03129326A (ja) * | 1989-10-13 | 1991-06-03 | Hitachi Ltd | 表示装置 |
| JPH03216996A (ja) * | 1990-01-19 | 1991-09-24 | Matsushita Electron Corp | 画像表示装置 |
| JPH04278928A (ja) * | 1991-03-07 | 1992-10-05 | Sharp Corp | アクティブマトリクス基板 |
| JPH053318A (ja) * | 1991-06-26 | 1993-01-08 | Stanley Electric Co Ltd | 薄膜トランジスタと薄膜トランジスタの製造方法 |
| JPH06169086A (ja) * | 1992-11-30 | 1994-06-14 | Sanyo Electric Co Ltd | 多結晶シリコン薄膜トランジスタ |
| JPH0778992A (ja) * | 1993-09-07 | 1995-03-20 | Fujitsu Ltd | 薄膜トランジスタ及びその製造方法 |
| JPH07142735A (ja) * | 1993-11-12 | 1995-06-02 | Sanyo Electric Co Ltd | 薄膜トランジスタの製造方法及び薄膜トランジスタ |
| JPH11281992A (ja) * | 1998-03-31 | 1999-10-15 | Sharp Corp | 液晶表示装置及びその製造方法 |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100412121B1 (ko) * | 2001-03-31 | 2003-12-31 | 비오이 하이디스 테크놀로지 주식회사 | 박막 트랜지스터의 제조방법 |
| US8634044B2 (en) | 2005-12-28 | 2014-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| JP2007199708A (ja) * | 2005-12-28 | 2007-08-09 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法 |
| US11269214B2 (en) | 2005-12-28 | 2022-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| US10739637B2 (en) | 2005-12-28 | 2020-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| US10444564B1 (en) | 2005-12-28 | 2019-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| US9703140B2 (en) | 2005-12-28 | 2017-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| JP2014115677A (ja) * | 2005-12-28 | 2014-06-26 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| JP2008009372A (ja) * | 2006-06-29 | 2008-01-17 | Lg Philips Lcd Co Ltd | 液晶表示装置及びその製造方法 |
| JP4668893B2 (ja) * | 2006-06-29 | 2011-04-13 | エルジー ディスプレイ カンパニー リミテッド | 液晶表示装置及びその製造方法 |
| JP2008015455A (ja) * | 2006-06-30 | 2008-01-24 | Lg Phillips Lcd Co Ltd | 液晶表示装置及びその製造方法 |
| KR101338106B1 (ko) * | 2006-06-30 | 2013-12-06 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
| KR101236726B1 (ko) | 2006-06-30 | 2013-02-25 | 엘지디스플레이 주식회사 | 액정표시장치의 제조방법 |
| JP4680878B2 (ja) * | 2006-06-30 | 2011-05-11 | エルジー ディスプレイ カンパニー リミテッド | 液晶表示装置及びその製造方法 |
| JP2008015460A (ja) * | 2006-06-30 | 2008-01-24 | Lg Philips Lcd Co Ltd | 液晶表示装置の製造方法及び液晶表示装置 |
| KR101338108B1 (ko) * | 2006-12-14 | 2013-12-06 | 엘지디스플레이 주식회사 | 액정표시장치의 제조방법 |
| JP2009054836A (ja) * | 2007-08-28 | 2009-03-12 | Mitsubishi Electric Corp | Ｔｆｔ基板及びその製造方法 |
| JP2010098280A (ja) * | 2008-02-22 | 2010-04-30 | Toppan Printing Co Ltd | 透明薄膜トランジスタ及び画像表示装置 |
| JP2009271527A (ja) * | 2008-05-06 | 2009-11-19 | Samsung Mobile Display Co Ltd | 平板表示装置用の薄膜トランジスタアレイ基板、それを備える有機発光表示装置、及びそれらの製造方法 |
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Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20070116 |