JP2002075901A - アニール装置、メッキ処理システム、および半導体デバイスの製造方法 - Google Patents

アニール装置、メッキ処理システム、および半導体デバイスの製造方法

Info

Publication number
JP2002075901A
JP2002075901A JP2000263689A JP2000263689A JP2002075901A JP 2002075901 A JP2002075901 A JP 2002075901A JP 2000263689 A JP2000263689 A JP 2000263689A JP 2000263689 A JP2000263689 A JP 2000263689A JP 2002075901 A JP2002075901 A JP 2002075901A
Authority
JP
Japan
Prior art keywords
processed
susceptor
heat
annealing
processing chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000263689A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002075901A5 (https=
Inventor
Wataru Okase
亘 大加瀬
Takenobu Matsuo
剛伸 松尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2000263689A priority Critical patent/JP2002075901A/ja
Publication of JP2002075901A publication Critical patent/JP2002075901A/ja
Publication of JP2002075901A5 publication Critical patent/JP2002075901A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2000263689A 2000-08-31 2000-08-31 アニール装置、メッキ処理システム、および半導体デバイスの製造方法 Pending JP2002075901A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000263689A JP2002075901A (ja) 2000-08-31 2000-08-31 アニール装置、メッキ処理システム、および半導体デバイスの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000263689A JP2002075901A (ja) 2000-08-31 2000-08-31 アニール装置、メッキ処理システム、および半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
JP2002075901A true JP2002075901A (ja) 2002-03-15
JP2002075901A5 JP2002075901A5 (https=) 2007-10-11

Family

ID=18751197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000263689A Pending JP2002075901A (ja) 2000-08-31 2000-08-31 アニール装置、メッキ処理システム、および半導体デバイスの製造方法

Country Status (1)

Country Link
JP (1) JP2002075901A (https=)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7081290B2 (en) 2002-04-04 2006-07-25 Tosoh Corporation Quartz glass thermal sprayed parts and method for producing the same
JP2008166653A (ja) * 2007-01-05 2008-07-17 Hitachi Kokusai Electric Inc 基板処理装置
JP2008288598A (ja) * 2007-05-20 2008-11-27 Applied Materials Inc 制御されたアニーリング方法
JP2009200330A (ja) * 2008-02-22 2009-09-03 Denso Corp 半導体製造装置
JP2009212185A (ja) * 2008-03-03 2009-09-17 Denso Corp 半導体製造装置
JP2009231661A (ja) * 2008-03-25 2009-10-08 Dainippon Screen Mfg Co Ltd 熱処理装置
JP2010199186A (ja) * 2009-02-24 2010-09-09 Shinetsu Quartz Prod Co Ltd 赤外線透過性部材の熱処理用石英ガラス治具
KR101297981B1 (ko) * 2011-10-07 2013-08-23 (주) 예스티 기판의 열처리 장치
CN103369744A (zh) * 2012-03-30 2013-10-23 台湾积体电路制造股份有限公司 用于集成电路制造的蜂巢状锥形加热器
JP2014060275A (ja) * 2012-09-18 2014-04-03 Hitachi Kokusai Electric Inc 加熱装置、基板処理装置及び半導体製造方法
WO2014113179A1 (en) * 2013-01-16 2014-07-24 Applied Materials, Inc Quartz upper and lower domes
WO2016036497A1 (en) * 2014-09-05 2016-03-10 Applied Materials, Inc. Upper dome for epi chamber
US10760161B2 (en) 2014-09-05 2020-09-01 Applied Materials, Inc. Inject insert for EPI chamber
US11060203B2 (en) 2014-09-05 2021-07-13 Applied Materials, Inc. Liner for epi chamber
CN114823331A (zh) * 2022-04-22 2022-07-29 江苏晟驰微电子有限公司 一种用于三极管器件制造的氮氢退火设备及其工艺
RU217976U1 (ru) * 2023-02-14 2023-04-27 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" Многофункциональное устройство для соединения полупроводниковых пластин

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61116820A (ja) * 1984-11-13 1986-06-04 Fujitsu Ltd 半導体のアニ−ル方法
JPS63186424A (ja) * 1987-01-28 1988-08-02 Nikon Corp 光加熱装置
JPH05306142A (ja) * 1992-04-30 1993-11-19 Shinetsu Quartz Prod Co Ltd 黒色石英ガラス発泡体及びその製造方法
JPH0758020A (ja) * 1990-03-09 1995-03-03 Applied Materials Inc 半導体加工処理用二重ドーム反応器
JPH08107078A (ja) * 1994-10-03 1996-04-23 Nec Corp 半導体装置の加熱装置およびその方法
JPH1167681A (ja) * 1997-08-21 1999-03-09 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2000124156A (ja) * 1998-10-12 2000-04-28 Sony Corp 半導体製造装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61116820A (ja) * 1984-11-13 1986-06-04 Fujitsu Ltd 半導体のアニ−ル方法
JPS63186424A (ja) * 1987-01-28 1988-08-02 Nikon Corp 光加熱装置
JPH0758020A (ja) * 1990-03-09 1995-03-03 Applied Materials Inc 半導体加工処理用二重ドーム反応器
JPH05306142A (ja) * 1992-04-30 1993-11-19 Shinetsu Quartz Prod Co Ltd 黒色石英ガラス発泡体及びその製造方法
JPH08107078A (ja) * 1994-10-03 1996-04-23 Nec Corp 半導体装置の加熱装置およびその方法
JPH1167681A (ja) * 1997-08-21 1999-03-09 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2000124156A (ja) * 1998-10-12 2000-04-28 Sony Corp 半導体製造装置

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7081290B2 (en) 2002-04-04 2006-07-25 Tosoh Corporation Quartz glass thermal sprayed parts and method for producing the same
JP2008166653A (ja) * 2007-01-05 2008-07-17 Hitachi Kokusai Electric Inc 基板処理装置
JP2008288598A (ja) * 2007-05-20 2008-11-27 Applied Materials Inc 制御されたアニーリング方法
JP2009200330A (ja) * 2008-02-22 2009-09-03 Denso Corp 半導体製造装置
JP2009212185A (ja) * 2008-03-03 2009-09-17 Denso Corp 半導体製造装置
JP2009231661A (ja) * 2008-03-25 2009-10-08 Dainippon Screen Mfg Co Ltd 熱処理装置
JP2010199186A (ja) * 2009-02-24 2010-09-09 Shinetsu Quartz Prod Co Ltd 赤外線透過性部材の熱処理用石英ガラス治具
KR101297981B1 (ko) * 2011-10-07 2013-08-23 (주) 예스티 기판의 열처리 장치
CN103369744A (zh) * 2012-03-30 2013-10-23 台湾积体电路制造股份有限公司 用于集成电路制造的蜂巢状锥形加热器
US9960059B2 (en) 2012-03-30 2018-05-01 Taiwan Semiconductor Manufacturing Company, Ltd. Honeycomb heaters for integrated circuit manufacturing
KR101462315B1 (ko) * 2012-03-30 2014-11-14 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 집적 회로 제조를 위한 허니 콘 히터들
JP2014060275A (ja) * 2012-09-18 2014-04-03 Hitachi Kokusai Electric Inc 加熱装置、基板処理装置及び半導体製造方法
CN104885192A (zh) * 2013-01-16 2015-09-02 应用材料公司 石英上拱形结构及下拱形结构
US9768043B2 (en) 2013-01-16 2017-09-19 Applied Materials, Inc. Quartz upper and lower domes
US20180005856A1 (en) * 2013-01-16 2018-01-04 Applied Materials, Inc. Quartz upper and lower domes
WO2014113179A1 (en) * 2013-01-16 2014-07-24 Applied Materials, Inc Quartz upper and lower domes
TWI638070B (zh) * 2013-01-16 2018-10-11 應用材料股份有限公司 石英的上部及下部圓頂
WO2016036497A1 (en) * 2014-09-05 2016-03-10 Applied Materials, Inc. Upper dome for epi chamber
TWI662146B (zh) * 2014-09-05 2019-06-11 美商應用材料股份有限公司 用於ｅｐｉ腔室的上圓頂
US10760161B2 (en) 2014-09-05 2020-09-01 Applied Materials, Inc. Inject insert for EPI chamber
US11060203B2 (en) 2014-09-05 2021-07-13 Applied Materials, Inc. Liner for epi chamber
CN114823331A (zh) * 2022-04-22 2022-07-29 江苏晟驰微电子有限公司 一种用于三极管器件制造的氮氢退火设备及其工艺
CN114823331B (zh) * 2022-04-22 2023-03-03 江苏晟驰微电子有限公司 一种用于三极管器件制造的氮氢退火设备及其工艺
RU217976U1 (ru) * 2023-02-14 2023-04-27 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" Многофункциональное устройство для соединения полупроводниковых пластин

Similar Documents

Publication Publication Date Title
US5872889A (en) Apparatus and method for rapid thermal processing
US5965047A (en) Rapid thermal processing (RTP) system with rotating substrate
KR100613171B1 (ko) 반도체 기판 냉각 방법 및 장치
US6753506B2 (en) System and method of fast ambient switching for rapid thermal processing
CN103456661B (zh) 用于半导体的uv固化系统
JP2002075901A (ja) アニール装置、メッキ処理システム、および半導体デバイスの製造方法
JP5077018B2 (ja) 熱処理装置
KR100737902B1 (ko) 공정 챔버의 냉각
JP2002532897A (ja) 急速熱処理（ｒｔｐ）システムのためのガス駆動式回転サセプタ
JPH05152224A (ja) 急速熱処理装置
JPH09219356A (ja) 処理装置及び処理方法
JP4270457B2 (ja) 有機物除去装置および膜厚測定装置
KR102324408B1 (ko) 기판 처리 장치 및 방법
KR102099116B1 (ko) 기판 처리 장치 및 방법
JP2002075901A5 (https=)
JP2003017430A (ja) 基板の熱処理装置
JPH06326078A (ja) 熱処理装置
JP4071047B2 (ja) 加熱冷却装置、真空処理装置
JPH1097999A (ja) 加熱装置、処理装置、加熱方法及び処理方法
JP2000058534A (ja) 基板熱処理装置
JP2010080537A (ja) 基板処理装置
KR102403200B1 (ko) 기판 지지 유닛, 기판 처리 장치, 기판 처리 방법
JP2003042852A (ja) 基板の接触式温度測定装置およびそれを備えた基板の熱処理装置
JP3704677B2 (ja) 基板処理装置及び基板処理方法
JP2007005399A (ja) 基板処理装置

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070829

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070829

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20101210

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101228

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20110426