JP2002064107A5 - - Google Patents

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Publication number
JP2002064107A5
JP2002064107A5 JP2001172038A JP2001172038A JP2002064107A5 JP 2002064107 A5 JP2002064107 A5 JP 2002064107A5 JP 2001172038 A JP2001172038 A JP 2001172038A JP 2001172038 A JP2001172038 A JP 2001172038A JP 2002064107 A5 JP2002064107 A5 JP 2002064107A5
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JP
Japan
Prior art keywords
width
conductive layer
layer
conductive
forming
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JP2001172038A
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English (en)
Japanese (ja)
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JP2002064107A (ja
JP4064075B2 (ja
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Priority to JP2001172038A priority Critical patent/JP4064075B2/ja
Priority claimed from JP2001172038A external-priority patent/JP4064075B2/ja
Publication of JP2002064107A publication Critical patent/JP2002064107A/ja
Publication of JP2002064107A5 publication Critical patent/JP2002064107A5/ja
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Publication of JP4064075B2 publication Critical patent/JP4064075B2/ja
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Expired - Fee Related legal-status Critical Current

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JP2001172038A 2000-06-07 2001-06-07 半導体装置の作製方法 Expired - Fee Related JP4064075B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001172038A JP4064075B2 (ja) 2000-06-07 2001-06-07 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-170096 2000-06-07
JP2000170096 2000-06-07
JP2001172038A JP4064075B2 (ja) 2000-06-07 2001-06-07 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002064107A JP2002064107A (ja) 2002-02-28
JP2002064107A5 true JP2002064107A5 (enExample) 2005-08-04
JP4064075B2 JP4064075B2 (ja) 2008-03-19

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ID=26593459

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JP2001172038A Expired - Fee Related JP4064075B2 (ja) 2000-06-07 2001-06-07 半導体装置の作製方法

Country Status (1)

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JP (1) JP4064075B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4869509B2 (ja) 2001-07-17 2012-02-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4465954B2 (ja) * 2002-10-31 2010-05-26 ソニー株式会社 透明導電膜を有する表示装置の製造方法
JP4402396B2 (ja) * 2003-08-07 2010-01-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4455855B2 (ja) * 2003-09-19 2010-04-21 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
US7288480B2 (en) 2004-04-23 2007-10-30 Semiconductor Energy Laboratory Co., Ltd. Thin film integrated circuit and method for manufacturing the same, CPU, memory, electronic card and electronic device
US7692610B2 (en) * 2005-11-30 2010-04-06 Semiconductor Energy Laboratory Co., Ltd. Display device
KR100770263B1 (ko) * 2006-05-03 2007-10-25 삼성에스디아이 주식회사 박막트랜지스터 및 그의 제조 방법
JP2015188062A (ja) 2014-02-07 2015-10-29 株式会社半導体エネルギー研究所 半導体装置
JP6579086B2 (ja) * 2016-11-15 2019-09-25 信越半導体株式会社 デバイス形成方法

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