JP2002064107A5

JP2002064107A5 -

Info

Publication number: JP2002064107A5
Application number: JP2001172038A
Authority: JP
Filing date: 2001-06-07
Publication date: 2005-08-04
Anticipated expiration: 2021-06-07

Claims

A first step of forming a semiconductor layer on an insulating surface;
A second step of forming an insulating film on the semiconductor layer;
A third step of forming a first electrode comprising a stack of a first conductive layer having a first width and a second conductive layer on the insulating film;
A fourth step of forming a high-concentration impurity region by adding an impurity element to the semiconductor layer using the first electrode as a mask;
The second conductive layer in the first electrode is etched to form a second layer composed of a first conductive layer having the first width and a second conductive layer having the second width. A fifth step of forming an electrode;
Etching the first conductive layer in the second electrode to form a third layer composed of a first conductive layer having a third width and a second conductive layer having the second width. A sixth step of forming electrodes;
A seventh step of forming a low-concentration impurity region by adding an impurity element to the semiconductor layer through the first conductive layer or the insulating film using the second conductive layer as a mask;
A method for manufacturing a semiconductor device including:

A first step of forming a semiconductor layer on an insulating surface;
A second step of forming an insulating film on the semiconductor layer;
A third step of forming a first electrode comprising a stack of a first conductive layer having a first width and a second conductive layer on the insulating film;
The second conductive layer in the first electrode is etched to form a second layer composed of a first conductive layer having the first width and a second conductive layer having the second width. A fourth step of forming an electrode;
A fifth step of forming a high concentration impurity region by adding an impurity element to the semiconductor layer using the second electrode as a mask;
Etching the first conductive layer in the second electrode to form a third layer composed of a first conductive layer having a third width and a second conductive layer having the second width. A sixth step of forming electrodes;
A seventh step of forming a low-concentration impurity region by adding an impurity element to the semiconductor layer through the first conductive layer or the insulating film using the second conductive layer as a mask;
A method for manufacturing a semiconductor device having the structure.

3. The method for manufacturing a semiconductor device according to claim 1, wherein the second width is narrower than the first width.

4. The method for manufacturing a semiconductor device according to claim 1, wherein the third width is narrower than the first width and wider than the second width.

5. The method according to claim 1, wherein the third step includes
After stacking the first conductive film and the second conductive film on the insulating film,
Performing a first etching process on the second conductive film to form the second conductive layer;
A second etching process is performed on the first conductive film to form the first conductive layer, and the first conductive layer having the first width and the second conductive layer are stacked. A method for manufacturing a semiconductor device, comprising forming the first electrode.

A first step of forming a semiconductor layer on an insulating surface;
A second step of forming an insulating film on the semiconductor layer;
A third step of stacking and forming a first conductive film and a second conductive film on the insulating film;
A fourth step of etching the second conductive film to form a second conductive layer having a first width;
Using the second conductive layer having the first width as a mask, a high concentration impurity region is formed by adding an impurity element to the semiconductor layer through the first conductive film or the insulating film. Process,
Etching the first conductive film to form a first electrode comprising a stack of a first conductive layer having the second width and a second conductive layer having a third width; And the process of
The second conductive layer in the first electrode is etched to form a second layer composed of a stack of a first conductive layer having the second width and a second conductive layer having a fourth width. A seventh step of forming electrodes;
Etching the first conductive layer in the second electrode to form a third layer comprising a first conductive layer having a fifth width and a second conductive layer having the fourth width. An eighth step of forming electrodes;
Using the second conductive layer having the fourth width as a mask, an impurity element is added to the semiconductor layer through the first conductive layer or the insulating film to form a low concentration impurity region Process,
A method for manufacturing a semiconductor device including:

The method for manufacturing a semiconductor device according to claim 6, wherein the second width is narrower than the first width.

8. The method for manufacturing a semiconductor device according to claim 6, wherein the fifth width is narrower than the second width and wider than the fourth width.

A first step of forming a semiconductor layer on an insulating surface;
A second step of forming an insulating film on the semiconductor layer;
A third step of stacking and forming a first conductive film and a second conductive film on the insulating film;
A fourth step of etching the second conductive film to form a second conductive layer having a first width;
Using the second conductive layer having the first width as a mask, a high concentration impurity region is formed by adding an impurity element to the semiconductor layer through the first conductive film or the insulating film. Process,
A sixth step of etching the second conductive layer to form a second conductive layer having the second width;
A seventh step of etching the first conductive film to form an electrode comprising a stack of a first conductive layer having a third width and a second conductive layer having the second width; ,
Using the second conductive layer having the second width as a mask, an impurity element is added to the semiconductor layer through the first conductive layer or the insulating film to form a low concentration impurity region. Process,
A method for manufacturing a semiconductor device having the structure.

The method for manufacturing a semiconductor device according to claim 9, wherein the second width is narrower than the first width.

11. The method for manufacturing a semiconductor device according to claim 9, wherein the third width is narrower than the first width and wider than the second width.

A first step of forming a semiconductor layer on an insulating surface;
A second step of forming an insulating film on the semiconductor layer;
A third step of stacking and forming a first conductive film and a second conductive film on the insulating film;
A fourth step of etching the second conductive film to form a second conductive layer having a first width;
Using the second conductive layer having the first width as a mask, a high concentration impurity region is formed by adding an impurity element to the semiconductor layer through the first conductive film or the insulating film. Process,
The first conductive film and the second conductive layer are etched to form an electrode including a stack of a first conductive layer having a second width and a second conductive layer having a third width. A sixth step of:
Using the second conductive layer having the third width as a mask, an impurity element is added to the semiconductor layer through the first conductive layer or the insulating film to form a low concentration impurity region Process,
A method for manufacturing a semiconductor device including:

The method for manufacturing a semiconductor device according to claim 12, wherein the third width is narrower than the first width.

14. The method for manufacturing a semiconductor device according to claim 12, wherein the second width is narrower than the first width and wider than the third width.

15. The method for manufacturing a semiconductor device according to claim 1, wherein the impurity element is an impurity element imparting n-type or p-type to a semiconductor.

16. The method for manufacturing a semiconductor device according to claim 1, wherein the first conductive layer is a TaN layer, and the second conductive layer is a W layer.

The semiconductor device according to any one of claims 1 to 16, a video camera, a digital camera, a projector, a goggle type display, a car navigation, a personal computer, portable information terminal, a digital video disk player or electronic gaming device, It is .