JP4064075B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP4064075B2 JP4064075B2 JP2001172038A JP2001172038A JP4064075B2 JP 4064075 B2 JP4064075 B2 JP 4064075B2 JP 2001172038 A JP2001172038 A JP 2001172038A JP 2001172038 A JP2001172038 A JP 2001172038A JP 4064075 B2 JP4064075 B2 JP 4064075B2
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- 238000004544 sputter deposition Methods 0.000 description 13
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- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
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- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
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- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
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- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
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- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001172038A JP4064075B2 (ja) | 2000-06-07 | 2001-06-07 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000-170096 | 2000-06-07 | ||
| JP2000170096 | 2000-06-07 | ||
| JP2001172038A JP4064075B2 (ja) | 2000-06-07 | 2001-06-07 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002064107A JP2002064107A (ja) | 2002-02-28 |
| JP2002064107A5 JP2002064107A5 (enExample) | 2005-08-04 |
| JP4064075B2 true JP4064075B2 (ja) | 2008-03-19 |
Family
ID=26593459
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001172038A Expired - Fee Related JP4064075B2 (ja) | 2000-06-07 | 2001-06-07 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4064075B2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4869509B2 (ja) | 2001-07-17 | 2012-02-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4465954B2 (ja) * | 2002-10-31 | 2010-05-26 | ソニー株式会社 | 透明導電膜を有する表示装置の製造方法 |
| JP4402396B2 (ja) * | 2003-08-07 | 2010-01-20 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4455855B2 (ja) * | 2003-09-19 | 2010-04-21 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
| US7288480B2 (en) | 2004-04-23 | 2007-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Thin film integrated circuit and method for manufacturing the same, CPU, memory, electronic card and electronic device |
| US7692610B2 (en) * | 2005-11-30 | 2010-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| KR100770263B1 (ko) * | 2006-05-03 | 2007-10-25 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그의 제조 방법 |
| JP2015188062A (ja) | 2014-02-07 | 2015-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6579086B2 (ja) * | 2016-11-15 | 2019-09-25 | 信越半導体株式会社 | デバイス形成方法 |
-
2001
- 2001-06-07 JP JP2001172038A patent/JP4064075B2/ja not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JP2002064107A (ja) | 2002-02-28 |
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