JP2002033185A - 発光装置および電気器具 - Google Patents
発光装置および電気器具Info
- Publication number
- JP2002033185A JP2002033185A JP2001136181A JP2001136181A JP2002033185A JP 2002033185 A JP2002033185 A JP 2002033185A JP 2001136181 A JP2001136181 A JP 2001136181A JP 2001136181 A JP2001136181 A JP 2001136181A JP 2002033185 A JP2002033185 A JP 2002033185A
- Authority
- JP
- Japan
- Prior art keywords
- film
- light
- light emitting
- emitting device
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 33
- 229910052799 carbon Inorganic materials 0.000 claims description 33
- 239000002245 particle Substances 0.000 claims description 19
- 230000000737 periodic effect Effects 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000002923 metal particle Substances 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 211
- 239000010410 layer Substances 0.000 description 101
- 238000002347 injection Methods 0.000 description 21
- 239000007924 injection Substances 0.000 description 21
- 239000011159 matrix material Substances 0.000 description 16
- 239000000758 substrate Substances 0.000 description 15
- 230000006870 function Effects 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- 239000000126 substance Substances 0.000 description 14
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 239000011347 resin Substances 0.000 description 12
- 229920005989 resin Polymers 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 11
- 239000002985 plastic film Substances 0.000 description 11
- 229920006255 plastic film Polymers 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 9
- 239000004925 Acrylic resin Substances 0.000 description 7
- 229920000178 Acrylic resin Polymers 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000010549 co-Evaporation Methods 0.000 description 5
- 230000005284 excitation Effects 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000003566 sealing material Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 101100321669 Fagopyrum esculentum FA02 gene Proteins 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003635 deoxygenating effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
Landscapes
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001136181A JP2002033185A (ja) | 2000-05-06 | 2001-05-07 | 発光装置および電気器具 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000172745 | 2000-05-06 | ||
| JP2000-172745 | 2000-05-06 | ||
| JP2001136181A JP2002033185A (ja) | 2000-05-06 | 2001-05-07 | 発光装置および電気器具 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002033185A true JP2002033185A (ja) | 2002-01-31 |
| JP2002033185A5 JP2002033185A5 (enExample) | 2008-05-22 |
Family
ID=26593590
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001136181A Withdrawn JP2002033185A (ja) | 2000-05-06 | 2001-05-07 | 発光装置および電気器具 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002033185A (enExample) |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004103334A (ja) * | 2002-09-06 | 2004-04-02 | Seiko Epson Corp | 有機ｅｌ装置および電子機器 |
| JP2005078946A (ja) * | 2003-08-29 | 2005-03-24 | Semiconductor Energy Lab Co Ltd | 電子機器、半導体装置およびその作製方法 |
| JP2006024711A (ja) * | 2004-07-07 | 2006-01-26 | Japan Science & Technology Agency | 有機エレクトロルミネッセンス素子 |
| JPWO2004068911A1 (ja) * | 2003-01-29 | 2006-05-25 | 株式会社半導体エネルギー研究所 | 発光装置 |
| JP2007147814A (ja) * | 2005-11-25 | 2007-06-14 | Seiko Epson Corp | 発光装置およびその製造方法並びに電子機器 |
| JP2007234391A (ja) * | 2006-03-01 | 2007-09-13 | Seiko Epson Corp | エレクトロルミネッセンス表示装置及び電子機器 |
| JP2007531001A (ja) * | 2004-03-24 | 2007-11-01 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | エレクトロルミネセント表示装置 |
| US7417373B2 (en) | 2004-04-07 | 2008-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, electronic device, and television device |
| US7580014B2 (en) | 2003-06-26 | 2009-08-25 | Casio Computer Co., Ltd. | Display apparatus |
| JP2011014550A (ja) * | 2005-05-20 | 2011-01-20 | Lg Display Co Ltd | 光吸収性金属ナノ粒子層を含んだ表示素子 |
| JP2013101376A (ja) * | 2004-04-28 | 2013-05-23 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| WO2014184975A1 (ja) * | 2013-05-17 | 2014-11-20 | パイオニア株式会社 | 有機ｅｌ素子 |
| WO2014208449A1 (ja) * | 2013-06-27 | 2014-12-31 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子及びその製造方法 |
| US8987712B2 (en) | 2012-04-19 | 2015-03-24 | Kabushiki Kaisha Toshiba | Display device |
| JP2018060600A (ja) * | 2016-09-30 | 2018-04-12 | パイオニア株式会社 | 発光装置 |
| KR20190132378A (ko) | 2017-03-29 | 2019-11-27 | 지오마텍 가부시키가이샤 | 유기 일렉트로루미네센스 소자용 전극, 유기 일렉트로루미네센스 소자, 유기 일렉트로루미네센스 표시장치 및 유기 일렉트로루미네센스 소자용 전극의 제조방법 |
| KR20220157459A (ko) | 2020-03-25 | 2022-11-29 | 후아웨이 테크놀러지 컴퍼니 리미티드 | 디스플레이 디바이스 및 디스플레이 장비 |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03274694A (ja) * | 1990-03-23 | 1991-12-05 | Nec Corp | 有機薄膜ｅｌ素子 |
| JPH065367A (ja) * | 1992-06-18 | 1994-01-14 | Pioneer Electron Corp | エレクトロルミネッセンス素子 |
| JPH08185984A (ja) * | 1994-12-27 | 1996-07-16 | Idemitsu Kosan Co Ltd | 有機エレクトロルミネセンス素子 |
| JPH08241048A (ja) * | 1994-12-14 | 1996-09-17 | Eastman Kodak Co | 有機エレクトロルミネセンス層を有するエレクトロルミネセンスデバイス |
| JPH1050478A (ja) * | 1996-04-19 | 1998-02-20 | Toray Ind Inc | 有機電界発光素子およびその製造方法 |
| JPH10214043A (ja) * | 1996-11-29 | 1998-08-11 | Sanyo Electric Co Ltd | 表示装置 |
| JPH1124606A (ja) * | 1997-07-02 | 1999-01-29 | Seiko Epson Corp | 表示装置 |
| JPH11212493A (ja) * | 1998-01-29 | 1999-08-06 | Sharp Corp | 発光表示装置 |
| JPH11251059A (ja) * | 1998-02-27 | 1999-09-17 | Sanyo Electric Co Ltd | カラー表示装置 |
-
2001
- 2001-05-07 JP JP2001136181A patent/JP2002033185A/ja not_active Withdrawn
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03274694A (ja) * | 1990-03-23 | 1991-12-05 | Nec Corp | 有機薄膜ｅｌ素子 |
| JPH065367A (ja) * | 1992-06-18 | 1994-01-14 | Pioneer Electron Corp | エレクトロルミネッセンス素子 |
| JPH08241048A (ja) * | 1994-12-14 | 1996-09-17 | Eastman Kodak Co | 有機エレクトロルミネセンス層を有するエレクトロルミネセンスデバイス |
| JPH08185984A (ja) * | 1994-12-27 | 1996-07-16 | Idemitsu Kosan Co Ltd | 有機エレクトロルミネセンス素子 |
| JPH1050478A (ja) * | 1996-04-19 | 1998-02-20 | Toray Ind Inc | 有機電界発光素子およびその製造方法 |
| JPH10214043A (ja) * | 1996-11-29 | 1998-08-11 | Sanyo Electric Co Ltd | 表示装置 |
| JPH1124606A (ja) * | 1997-07-02 | 1999-01-29 | Seiko Epson Corp | 表示装置 |
| JPH11212493A (ja) * | 1998-01-29 | 1999-08-06 | Sharp Corp | 発光表示装置 |
| JPH11251059A (ja) * | 1998-02-27 | 1999-09-17 | Sanyo Electric Co Ltd | カラー表示装置 |
Cited By (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004103334A (ja) * | 2002-09-06 | 2004-04-02 | Seiko Epson Corp | 有機ｅｌ装置および電子機器 |
| JPWO2004068911A1 (ja) * | 2003-01-29 | 2006-05-25 | 株式会社半導体エネルギー研究所 | 発光装置 |
| US8207665B2 (en) | 2003-01-29 | 2012-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Electroluminescence device |
| KR101156971B1 (ko) * | 2003-01-29 | 2012-06-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광장치 |
| US7580014B2 (en) | 2003-06-26 | 2009-08-25 | Casio Computer Co., Ltd. | Display apparatus |
| US7960733B2 (en) | 2003-08-29 | 2011-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Electronics device, semiconductor device, and method for manufacturing the same |
| JP2005078946A (ja) * | 2003-08-29 | 2005-03-24 | Semiconductor Energy Lab Co Ltd | 電子機器、半導体装置およびその作製方法 |
| US8455873B2 (en) | 2003-08-29 | 2013-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Electronics device, semiconductor device, and method for manufacturing the same |
| JP2007531001A (ja) * | 2004-03-24 | 2007-11-01 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | エレクトロルミネセント表示装置 |
| US7417373B2 (en) | 2004-04-07 | 2008-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, electronic device, and television device |
| JP2013101376A (ja) * | 2004-04-28 | 2013-05-23 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| JP2014006535A (ja) * | 2004-04-28 | 2014-01-16 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| US8878754B2 (en) | 2004-04-28 | 2014-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US9997099B2 (en) | 2004-04-28 | 2018-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US9231001B2 (en) | 2004-04-28 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| JP2006024711A (ja) * | 2004-07-07 | 2006-01-26 | Japan Science & Technology Agency | 有機エレクトロルミネッセンス素子 |
| JP2011014550A (ja) * | 2005-05-20 | 2011-01-20 | Lg Display Co Ltd | 光吸収性金属ナノ粒子層を含んだ表示素子 |
| JP2007147814A (ja) * | 2005-11-25 | 2007-06-14 | Seiko Epson Corp | 発光装置およびその製造方法並びに電子機器 |
| JP2007234391A (ja) * | 2006-03-01 | 2007-09-13 | Seiko Epson Corp | エレクトロルミネッセンス表示装置及び電子機器 |
| US8987712B2 (en) | 2012-04-19 | 2015-03-24 | Kabushiki Kaisha Toshiba | Display device |
| WO2014184974A1 (ja) * | 2013-05-17 | 2014-11-20 | パイオニア株式会社 | 有機ｅｌ素子 |
| JPWO2014184975A1 (ja) * | 2013-05-17 | 2017-02-23 | パイオニア株式会社 | 有機ｅｌ素子 |
| JPWO2014184974A1 (ja) * | 2013-05-17 | 2017-02-23 | パイオニア株式会社 | 有機ｅｌ素子、ディスプレイ装置、及び照明装置 |
| WO2014184975A1 (ja) * | 2013-05-17 | 2014-11-20 | パイオニア株式会社 | 有機ｅｌ素子 |
| WO2014208449A1 (ja) * | 2013-06-27 | 2014-12-31 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子及びその製造方法 |
| JPWO2014208449A1 (ja) * | 2013-06-27 | 2017-02-23 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子及びその製造方法 |
| JP2018060600A (ja) * | 2016-09-30 | 2018-04-12 | パイオニア株式会社 | 発光装置 |
| KR20190132378A (ko) | 2017-03-29 | 2019-11-27 | 지오마텍 가부시키가이샤 | 유기 일렉트로루미네센스 소자용 전극, 유기 일렉트로루미네센스 소자, 유기 일렉트로루미네센스 표시장치 및 유기 일렉트로루미네센스 소자용 전극의 제조방법 |
| KR20220157459A (ko) | 2020-03-25 | 2022-11-29 | 후아웨이 테크놀러지 컴퍼니 리미티드 | 디스플레이 디바이스 및 디스플레이 장비 |
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