JP2002008962A5 - - Google Patents

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Publication number
JP2002008962A5
JP2002008962A5 JP2000183410A JP2000183410A JP2002008962A5 JP 2002008962 A5 JP2002008962 A5 JP 2002008962A5 JP 2000183410 A JP2000183410 A JP 2000183410A JP 2000183410 A JP2000183410 A JP 2000183410A JP 2002008962 A5 JP2002008962 A5 JP 2002008962A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2000183410A
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JP2002008962A (ja
JP4579376B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2000183410A priority Critical patent/JP4579376B2/ja
Priority claimed from JP2000183410A external-priority patent/JP4579376B2/ja
Priority to EP01305290A priority patent/EP1168085B1/en
Priority to DE60138509T priority patent/DE60138509D1/de
Priority to US09/881,804 priority patent/US6608666B2/en
Publication of JP2002008962A publication Critical patent/JP2002008962A/ja
Publication of JP2002008962A5 publication Critical patent/JP2002008962A5/ja
Application granted granted Critical
Publication of JP4579376B2 publication Critical patent/JP4579376B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000183410A 2000-06-19 2000-06-19 露光装置およびデバイス製造方法 Expired - Fee Related JP4579376B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000183410A JP4579376B2 (ja) 2000-06-19 2000-06-19 露光装置およびデバイス製造方法
EP01305290A EP1168085B1 (en) 2000-06-19 2001-06-18 Reference plate for exposure apparatus
DE60138509T DE60138509D1 (de) 2000-06-19 2001-06-18 Referenzplatte für einen Belichtungsapparat
US09/881,804 US6608666B2 (en) 2000-06-19 2001-06-18 Reference plate, exposure apparatus, device manufacturing system, device manufacturing method, semiconductor manufacturing factory, and exposure apparatus maintenance method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000183410A JP4579376B2 (ja) 2000-06-19 2000-06-19 露光装置およびデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2002008962A JP2002008962A (ja) 2002-01-11
JP2002008962A5 true JP2002008962A5 (ja) 2007-08-02
JP4579376B2 JP4579376B2 (ja) 2010-11-10

Family

ID=18684001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000183410A Expired - Fee Related JP4579376B2 (ja) 2000-06-19 2000-06-19 露光装置およびデバイス製造方法

Country Status (4)

Country Link
US (1) US6608666B2 (ja)
EP (1) EP1168085B1 (ja)
JP (1) JP4579376B2 (ja)
DE (1) DE60138509D1 (ja)

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US20040071161A1 (en) * 2000-06-30 2004-04-15 Tokyo Electron Limited Part maintenance system and part maintenance method of semiconductor processing system
US7095484B1 (en) * 2001-06-27 2006-08-22 University Of South Florida Method and apparatus for maskless photolithography
EP1276016B1 (en) * 2001-07-09 2009-06-10 Canon Kabushiki Kaisha Exposure apparatus
JP2004206702A (ja) * 2002-12-12 2004-07-22 Tokyo Electron Ltd パーツ管理システム及び方法、並びにプログラム及び記憶媒体
JP4101076B2 (ja) * 2003-02-06 2008-06-11 キヤノン株式会社 位置検出方法及び装置
TWI598934B (zh) 2003-10-09 2017-09-11 Nippon Kogaku Kk Exposure apparatus, exposure method, and device manufacturing method
US20060000814A1 (en) * 2004-06-30 2006-01-05 Bo Gu Laser-based method and system for processing targeted surface material and article produced thereby
JP2006173377A (ja) * 2004-12-16 2006-06-29 Nikon Corp 光学部品及び投影露光装置
JP4923480B2 (ja) * 2005-08-23 2012-04-25 株式会社ニコン 露光装置及びデバイス製造方法、計測部材
KR101435124B1 (ko) * 2008-04-29 2014-08-29 삼성전자 주식회사 노광 장치의 정렬 방법, 이를 이용한 감광막의 노광 방법및 감광막의 노광 방법을 수행하기 위한 노광 장치
NL2002998A1 (nl) 2008-06-18 2009-12-22 Asml Netherlands Bv Lithographic apparatus.
NL2003529A (en) * 2008-10-24 2010-04-27 Asml Netherlands Bv Lithographic apparatus, device manufacturing method and position control method.
JP5355245B2 (ja) * 2009-06-25 2013-11-27 株式会社日立ハイテクノロジーズ 露光装置、露光方法、及び表示用パネル基板の製造方法
CN104272194B (zh) * 2012-03-08 2017-08-25 迈普尔平版印刷Ip有限公司 处理靶材的光刻系统和方法
JP2015509666A (ja) 2012-03-08 2015-03-30 マッパー・リソグラフィー・アイピー・ビー．ブイ． アライメントセンサーとビーム測定センサーを備えている荷電粒子リソグラフィシステム
JP7089348B2 (ja) * 2017-07-28 2022-06-22 キヤノン株式会社 インプリント装置、インプリント方法および物品製造方法

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JPH0325913A (ja) * 1989-06-23 1991-02-04 Nec Kyushu Ltd 縮小投影型露光装置
JPH0437113A (ja) * 1990-06-01 1992-02-07 Mitsubishi Electric Corp 縮小投影露光装置
KR100254024B1 (ko) * 1990-07-23 2000-06-01 가나이 쓰도무 반도체 장치의 제조 방법
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US5477309A (en) * 1992-03-09 1995-12-19 Nikon Corporation Alignment apparatus
JP3420314B2 (ja) 1993-12-03 2003-06-23 キヤノン株式会社 位置ずれ計測方法及びそれを用いた計測装置
JPH07249558A (ja) * 1994-03-09 1995-09-26 Nikon Corp 位置合わせ方法
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JP3555208B2 (ja) * 1994-12-14 2004-08-18 株式会社ニコン 露光方法
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JP3437352B2 (ja) 1995-10-02 2003-08-18 キヤノン株式会社 照明光学系及び光源装置
US6242792B1 (en) * 1996-07-02 2001-06-05 Denso Corporation Semiconductor device having oblique portion as reflection
JP3428829B2 (ja) 1996-08-27 2003-07-22 キヤノン株式会社 位置合わせ方法及びそれを用いた投影露光装置
KR100197885B1 (ko) * 1996-12-23 1999-06-15 윤종용 노광설비의 기준마크 보호장치
JPH10284412A (ja) * 1997-04-10 1998-10-23 Nikon Corp 外部と光を授受するステージ装置及び投影露光装置
US5981352A (en) * 1997-09-08 1999-11-09 Lsi Logic Corporation Consistent alignment mark profiles on semiconductor wafers using fine grain tungsten protective layer
US5985764A (en) * 1997-12-22 1999-11-16 Taiwan Semiconductor Manufacturing Company, Ltd. Layer independent alignment system
JP3090113B2 (ja) * 1998-02-13 2000-09-18 日本電気株式会社 半導体装置の製造方法
US6197481B1 (en) * 1998-09-17 2001-03-06 Taiwan Semiconductor Manufacturing Company Wafer alignment marks protected by photoresist
US6294018B1 (en) * 1999-09-15 2001-09-25 Lucent Technologies Alignment techniques for epitaxial growth processes
US6057206A (en) * 1999-10-01 2000-05-02 Advanced Micro Devices, Inc. Mark protection scheme with no masking
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