JP2001518870A5 - - Google Patents
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- Publication number
- JP2001518870A5 JP2001518870A5 JP1998542645A JP54264598A JP2001518870A5 JP 2001518870 A5 JP2001518870 A5 JP 2001518870A5 JP 1998542645 A JP1998542645 A JP 1998542645A JP 54264598 A JP54264598 A JP 54264598A JP 2001518870 A5 JP2001518870 A5 JP 2001518870A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL97319329A PL184902B1 (pl) | 1997-04-04 | 1997-04-04 | Sposób usuwania nierówności i obszarów silnie zdefektowanych z powierzchni kryształów i warstw epitaksjalnych GaN i Ga AL In N |
| PL319329 | 1997-04-04 | ||
| PCT/PL1998/000010 WO1998045511A1 (en) | 1997-04-04 | 1998-03-13 | MECHANO-CHEMICAL POLISHING OF CRYSTALS AND EPITAXIAL LAYERS OF GaN AND Ga1-x-yAlxInyN |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001518870A JP2001518870A (ja) | 2001-10-16 |
| JP2001518870A5 true JP2001518870A5 (https=) | 2006-01-05 |
| JP4184441B2 JP4184441B2 (ja) | 2008-11-19 |
Family
ID=20069596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54264598A Expired - Fee Related JP4184441B2 (ja) | 1997-04-04 | 1998-03-13 | ＧａＮ及びＧａ▲下１−ｘ−ｙ▼Ａｌ▲下ｘ▼Ｉｎ▲下ｙ▼Ｎの結晶及びエピタキシャル層の機械−化学研摩 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6399500B1 (https=) |
| EP (1) | EP0972097B1 (https=) |
| JP (1) | JP4184441B2 (https=) |
| AT (1) | ATE204037T1 (https=) |
| DE (1) | DE69801316T2 (https=) |
| PL (1) | PL184902B1 (https=) |
| WO (1) | WO1998045511A1 (https=) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4145437B2 (ja) * | 1999-09-28 | 2008-09-03 | 住友電気工業株式会社 | 単結晶ＧａＮの結晶成長方法及び単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板 |
| JP2001144014A (ja) * | 1999-11-17 | 2001-05-25 | Ngk Insulators Ltd | エピタキシャル成長用基板およびその製造方法 |
| TWI277666B (en) * | 2001-06-06 | 2007-04-01 | Ammono Sp Zoo | Process and apparatus for obtaining bulk mono-crystalline gallium-containing nitride |
| US6488767B1 (en) * | 2001-06-08 | 2002-12-03 | Advanced Technology Materials, Inc. | High surface quality GaN wafer and method of fabricating same |
| PL374180A1 (en) * | 2001-10-26 | 2005-10-03 | Ammono Sp.Z O.O. | Nitride semiconductor laser element, and production method therefor |
| JP4693351B2 (ja) * | 2001-10-26 | 2011-06-01 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | エピタキシャル成長用基板 |
| JP4403067B2 (ja) * | 2002-05-17 | 2010-01-20 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | 超臨界アンモニアを用いるバルク単結晶生産設備 |
| US20060138431A1 (en) * | 2002-05-17 | 2006-06-29 | Robert Dwilinski | Light emitting device structure having nitride bulk single crystal layer |
| JP4416648B2 (ja) * | 2002-05-17 | 2010-02-17 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | 発光素子の製造方法 |
| JP4663319B2 (ja) * | 2002-06-26 | 2011-04-06 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | ガリウム含有窒化物バルク単結晶の製造方法 |
| KR101088991B1 (ko) * | 2002-12-11 | 2011-12-01 | 니치아 카가쿠 고교 가부시키가이샤 | 벌크 단결정 갈륨-함유 질화물의 제조공정 |
| PL224992B1 (pl) * | 2002-12-11 | 2017-02-28 | Ammono Spółka Z Ograniczoną Odpowiedzialnością | Podłoże typu template dla urządzeń opto-elektrycznych lub elektrycznych oraz sposób jego wytwarzania |
| JP4511801B2 (ja) * | 2003-03-14 | 2010-07-28 | 株式会社リコー | Ｉｉｉ族窒化物結晶の研磨方法およびｉｉｉ族窒化物結晶および半導体デバイス |
| KR20060024772A (ko) * | 2003-06-16 | 2006-03-17 | 스미토모덴키고교가부시키가이샤 | 질화물 반도체 결정 표면의 가공 방법 및 그 방법에 의해얻어진 질화물 반도체 결정 |
| EP1769105B1 (en) * | 2004-06-11 | 2014-05-14 | Ammono S.A. | Bulk mono-crystalline gallium nitride and method for its preparation |
| PL371405A1 (pl) * | 2004-11-26 | 2006-05-29 | Ammono Sp.Z O.O. | Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku |
| JP2007299979A (ja) * | 2006-05-01 | 2007-11-15 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物結晶の表面処理方法およびｉｉｉ族窒化物結晶基板 |
| US7585772B2 (en) * | 2006-07-26 | 2009-09-08 | Freiberger Compound Materials Gmbh | Process for smoothening III-N substrates |
| KR101363316B1 (ko) | 2006-07-26 | 2014-02-14 | 프라이베르게르 컴파운드 마터리얼스 게엠베하 | Ⅲ-ｎ 기판의 평활화방법 |
| JP2009272380A (ja) | 2008-05-01 | 2009-11-19 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物結晶およびその表面処理方法、ｉｉｉ族窒化物積層体およびその製造方法、ならびにｉｉｉ族窒化物半導体デバイスおよびその製造方法 |
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1997
- 1997-04-04 PL PL97319329A patent/PL184902B1/pl unknown
-
1998
- 1998-03-13 JP JP54264598A patent/JP4184441B2/ja not_active Expired - Fee Related
- 1998-03-13 WO PCT/PL1998/000010 patent/WO1998045511A1/en not_active Ceased
- 1998-03-13 EP EP98907295A patent/EP0972097B1/en not_active Expired - Lifetime
- 1998-03-13 US US09/402,692 patent/US6399500B1/en not_active Expired - Fee Related
- 1998-03-13 AT AT98907295T patent/ATE204037T1/de not_active IP Right Cessation
- 1998-03-13 DE DE69801316T patent/DE69801316T2/de not_active Expired - Lifetime