JP2001507757A - フラッシュ気化器 - Google Patents
フラッシュ気化器Info
- Publication number
- JP2001507757A JP2001507757A JP53439198A JP53439198A JP2001507757A JP 2001507757 A JP2001507757 A JP 2001507757A JP 53439198 A JP53439198 A JP 53439198A JP 53439198 A JP53439198 A JP 53439198A JP 2001507757 A JP2001507757 A JP 2001507757A
- Authority
- JP
- Japan
- Prior art keywords
- dome
- vaporization
- chamber
- nozzle
- reagent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D1/00—Evaporating
- B01D1/0082—Regulation; Control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D3/00—Distillation or related exchange processes in which liquids are contacted with gaseous media, e.g. stripping
- B01D3/06—Flash distillation
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Sampling And Sample Adjustment (AREA)
- Chemical Vapour Deposition (AREA)
- Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.試薬をフラッシュ気化するための装置であって、該装置は、 a)内部に気化チャンバを部分的に規定するハウジングと、 b)該チャンバ内に挿入可能である気化ドームであって、実質的に固体である 外部側壁を有し、且つ、良好な熱伝導材料からなる気化ドームと、 c)該気化ドームを加熱するための内部ヒータと、 d)該ハウジング上に配置された上フランジであって、気化チャンバの上部チ ャンバ境界線を規定し、試薬を受け取るための流入口を有し、温度センサのため の流入口を有する上フランジと、 e)該試薬を該気化ドーム表面に付与するための流体流入口と流体連通するノ ズルと、 を含む装置。 2.前記ドームに取り付けられた支持ベースを更に含み、該支持ベースが前記ハ ウジングと密封接合し、それにより、該支持ベースが該気化チャンバの下部チャ ンバ境界線を規定する、請求項1に記載の装置。 3.前記チャンバと流体連通している蒸気除去チューブと、該蒸気除去チューブ を通る流れを調節するためのバルブとを更に含む、請求項2に記載の装置。 4.前記蒸気ドームの内部の周りに巻かれた螺旋型加熱エレメントを含む抵抗ヒ ータを更に含み、該螺旋型加熱エレメントが鋳造金属合金内に封入され、該金属 合金が少なくとも約4ワットcm-1K-1の高い熱伝導率を有する、請求項3に記 載の装置。 5.前記ドーム温度センサが前記ドーム内に実質的に封入され、該温度センサが 該ドームの内部表面に密接して配置される、請求項4に記載の装置。 6.前記ドームの気化表面と熱的に密接する追加的な温度センサを更に含む、請 求項4に記載の装置。 7.前記チャンバと気体連通する少なくとも1対のキャリヤガス供給チューブを 更に含み、該ガス供給チューブが互いにずらされると共に、前記ハウジングから もずらして配置され、該チャンバ内にキャリアガスの渦流を提供する、請求項3 に記載の装置。 8.前記ハウジングが実質的に円筒形である、請求項3に記載の装置。 9.前記蒸気チャンバの前記ハウジングを加熱するためのヒータを更に含む、請 求項5に記載の装置。 10.前記ハウジングの温度を感知するための温度センサを更に含む、請求項8 に記載の装置。 11.前記ノズルが連続した流れを提供する、請求項1に記載の装置。 12.前記ノズルの位置が前記ドームに対して調整可能である、請求項1に記載 の装置。 13.前記ノズルが、複数の試薬の流れを提供する複数のオリフィスを有する、 請求項1に記載の装置。 14.前記上フランジ内に流体を受け取るための少なくとも1つの他の流入口と 、該1つの他の流入口と流体連通する少なくとも1つの他のノズルと、前記1つ の他のノズルを介して供給される試薬を気化させるための少なくとも1つの他の ドームとを更に含む、請求項1に記載の装置。 15.前記迫加的なノズルが独立して取り付けられた液体配送システムと独立し て液体連通する、請求項13に記載の装置。 16.前記追加的な気化ドームが独立して取り付けられた温度制御システムおよ び電力制御システムと電気的に接続した、請求項13に記載の装置。 17.前記追加的な気化ドームの相互汚染を防止するスプラッシュシールドを更 に含む、請求項13に記載の装置。 18.前記ドームがステンレス鋼である、請求項1に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/778,048 | 1997-01-02 | ||
US08/778,048 US5887117A (en) | 1997-01-02 | 1997-01-02 | Flash evaporator |
PCT/US1997/024082 WO1998031844A2 (en) | 1997-01-02 | 1997-12-31 | Flash evaporator |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2001507757A true JP2001507757A (ja) | 2001-06-12 |
JP3510636B2 JP3510636B2 (ja) | 2004-03-29 |
Family
ID=25112155
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53439198A Expired - Fee Related JP3510636B2 (ja) | 1997-01-02 | 1997-12-31 | フラッシュ気化器 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5887117A (ja) |
EP (1) | EP0950124B1 (ja) |
JP (1) | JP3510636B2 (ja) |
KR (1) | KR100320614B1 (ja) |
DE (1) | DE69730861T2 (ja) |
WO (1) | WO1998031844A2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004214622A (ja) * | 2002-11-14 | 2004-07-29 | Applied Materials Inc | ハイブリッド化学処理装置及び方法 |
JP2011072894A (ja) * | 2009-09-30 | 2011-04-14 | Chino Corp | 蒸発装置 |
JP2022055313A (ja) * | 2020-09-28 | 2022-04-07 | 株式会社Kokusai Electric | 気化システム、基板処理装置および半導体装置の製造方法 |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6836295B1 (en) | 1995-12-07 | 2004-12-28 | J. Carl Cooper | Audio to video timing measurement for MPEG type television systems |
EP1382060A1 (en) * | 2000-08-24 | 2004-01-21 | Cova Technologies Incorporated | SINGLE TRANSISTOR RARE EARTH MANGANITE fERROELECTRIC NONVOLATILE MEMORY CELL |
US6477890B1 (en) | 2000-09-15 | 2002-11-12 | K-Line Industries, Inc. | Smoke-producing apparatus for detecting leaks |
DE10057491A1 (de) * | 2000-11-20 | 2002-05-23 | Aixtron Ag | Vorrichtung und Verfahren zum Zuführen eines in die Gasform gebrachten flüssigen Ausgangsstoffes in einen CVD-Reaktor |
WO2002071477A1 (en) | 2001-03-02 | 2002-09-12 | Cova Technologies Incorporated | Single transistor rare earth manganite ferroelectric nonvolatile memory cell |
US7780785B2 (en) * | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
US6758591B1 (en) | 2002-03-22 | 2004-07-06 | Novellus Systems, Inc. | Mixing of materials in an integrated circuit manufacturing equipment |
US20030202785A1 (en) * | 2002-04-29 | 2003-10-30 | Monitto Perry H. | Fog machine with instantaneous heating element |
US6825517B2 (en) * | 2002-08-28 | 2004-11-30 | Cova Technologies, Inc. | Ferroelectric transistor with enhanced data retention |
US6714435B1 (en) | 2002-09-19 | 2004-03-30 | Cova Technologies, Inc. | Ferroelectric transistor for storing two data bits |
US6888736B2 (en) | 2002-09-19 | 2005-05-03 | Cova Technologies, Inc. | Ferroelectric transistor for storing two data bits |
SE527139C2 (sv) * | 2003-04-16 | 2005-12-27 | Xcounter Ab | Anordning och förfarande för dubbelenergi- och skanningbaserad detektering av joniserade strålning med stackade linjedetektorer och filter |
US20080073559A1 (en) * | 2003-12-12 | 2008-03-27 | Horsky Thomas N | Controlling the flow of vapors sublimated from solids |
EP1695369A4 (en) * | 2003-12-12 | 2009-11-04 | Semequip Inc | METHOD AND DEVICE FOR EXTENDING DEVICE TERMINATION IN ION IMPLANTATION |
KR101332739B1 (ko) * | 2005-01-18 | 2013-11-25 | 에이에스엠 아메리카, 인코포레이티드 | 박막 성장용 반응 시스템 |
US7713473B2 (en) * | 2005-06-30 | 2010-05-11 | Ethicon, Inc. | Sterilization system and vaporizer therefor |
DE102005030822A1 (de) * | 2005-07-01 | 2007-01-11 | Krones Ag | Verfahren und Vorrichtung zum Überwachen eines Verdampfers |
KR100688780B1 (ko) * | 2005-08-10 | 2007-03-02 | 동부일렉트로닉스 주식회사 | 반도체 소자 제조를 위한 이온주입공정에 사용되는 고체소스의 기화장치 |
DE102007031457A1 (de) * | 2007-07-05 | 2009-01-08 | Leybold Optics Gmbh | Verfahren und Vorrichtung zur Aufbringung einer Schicht eines Trennmittels auf ein Substrat |
US8291857B2 (en) * | 2008-07-03 | 2012-10-23 | Applied Materials, Inc. | Apparatuses and methods for atomic layer deposition |
CN103380486B (zh) * | 2010-12-21 | 2016-08-10 | 株式会社渡边商行 | 汽化器 |
CA2848661C (en) | 2011-09-14 | 2015-07-07 | Aquasource Technologies Corporation | System and method for water treatment |
KR20140135036A (ko) * | 2013-05-15 | 2014-11-25 | 삼성디스플레이 주식회사 | 기화기 및 이를 구비한 박막 증착 시스템 |
CN103556118B (zh) * | 2013-10-12 | 2016-03-02 | 深圳市华星光电技术有限公司 | 蒸镀装置 |
CN103676652B (zh) * | 2013-12-06 | 2016-04-13 | 杭州电子科技大学 | 一种动态闪蒸器建模方法 |
US10203108B2 (en) * | 2014-08-14 | 2019-02-12 | De Luca Oven Technologies, Llc | Vapor generator including wire mesh heating element |
WO2018191125A1 (en) * | 2017-04-10 | 2018-10-18 | Versum Materials Us, Llc | Aerosol-free vessel for bubbling chemical precursors in a deposition process |
US10872804B2 (en) | 2017-11-03 | 2020-12-22 | Asm Ip Holding B.V. | Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination |
US10872803B2 (en) | 2017-11-03 | 2020-12-22 | Asm Ip Holding B.V. | Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination |
US10807017B2 (en) * | 2018-12-20 | 2020-10-20 | Schlumberger Technology Corporation | Heating flash-on-oil vapor section |
KR20220043028A (ko) * | 2020-09-28 | 2022-04-05 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기화 시스템, 기판 처리 장치 및 반도체 장치의 제조 방법 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US522718A (en) * | 1894-07-10 | Harry ward leonard | ||
US2219522A (en) * | 1936-11-04 | 1940-10-29 | O W Reinsdorff | Apparatus for gasifying liquid fuel |
EP0328888B1 (de) * | 1988-02-11 | 1992-05-20 | Siemens Aktiengesellschaft | Thermostatisierte Anordnung zur sicheren und kontrollierten Verdampfung von giftigen oder an der Luft hochreaktiven flüssigen Reaktionsmedien, vorzugsweise für Niederdruckdampfabscheideanlagen in der Halbleitertechnik |
DE4124018C1 (ja) * | 1991-07-19 | 1992-11-19 | Leybold Ag, 6450 Hanau, De |
-
1997
- 1997-01-02 US US08/778,048 patent/US5887117A/en not_active Expired - Lifetime
- 1997-12-31 KR KR1019997006055A patent/KR100320614B1/ko not_active IP Right Cessation
- 1997-12-31 WO PCT/US1997/024082 patent/WO1998031844A2/en active IP Right Grant
- 1997-12-31 JP JP53439198A patent/JP3510636B2/ja not_active Expired - Fee Related
- 1997-12-31 DE DE69730861T patent/DE69730861T2/de not_active Expired - Lifetime
- 1997-12-31 EP EP97954802A patent/EP0950124B1/en not_active Expired - Lifetime
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004214622A (ja) * | 2002-11-14 | 2004-07-29 | Applied Materials Inc | ハイブリッド化学処理装置及び方法 |
US8070879B2 (en) | 2002-11-14 | 2011-12-06 | Applied Materials, Inc. | Apparatus and method for hybrid chemical processing |
JP2011072894A (ja) * | 2009-09-30 | 2011-04-14 | Chino Corp | 蒸発装置 |
JP2022055313A (ja) * | 2020-09-28 | 2022-04-07 | 株式会社Kokusai Electric | 気化システム、基板処理装置および半導体装置の製造方法 |
JP7258970B2 (ja) | 2020-09-28 | 2023-04-17 | 株式会社Kokusai Electric | 気化システム、基板処理装置および半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US5887117A (en) | 1999-03-23 |
EP0950124A4 (en) | 2002-06-19 |
KR20000069866A (ko) | 2000-11-25 |
JP3510636B2 (ja) | 2004-03-29 |
EP0950124A2 (en) | 1999-10-20 |
DE69730861T2 (de) | 2005-09-29 |
KR100320614B1 (ko) | 2002-01-16 |
EP0950124B1 (en) | 2004-09-22 |
WO1998031844A3 (en) | 1998-10-29 |
DE69730861D1 (de) | 2004-10-28 |
WO1998031844A2 (en) | 1998-07-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2001507757A (ja) | フラッシュ気化器 | |
WO1998031844A9 (en) | Flash evaporator | |
US6718126B2 (en) | Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition | |
JP6293699B2 (ja) | 蒸発器配送アンプル | |
US6805907B2 (en) | Method and apparatus for vapor generation and film deposition | |
US6471782B1 (en) | Precursor deposition using ultrasonic nebulizer | |
US5835677A (en) | Liquid vaporizer system and method | |
US20050205215A1 (en) | Apparatus for the evaporation of aqueous organic liquids and the production of powder pre-forms in flame hydrolysis processes | |
JP5732025B2 (ja) | 基板処理システムにおける材料蒸着方法及び装置 | |
JPH11111644A (ja) | 気化供給装置 | |
EP1643003A1 (en) | Vaporizer for CVD apparatus | |
KR20080088488A (ko) | 기화기 및 반도체 처리 시스템 | |
JPH11269653A (ja) | 液体材料気化装置 | |
JP2002502465A (ja) | 蒸気発生および膜析出のための方法及び装置 | |
US6758591B1 (en) | Mixing of materials in an integrated circuit manufacturing equipment | |
KR100322411B1 (ko) | 액체원료 기화장치 | |
JP2005051006A (ja) | 気化器 | |
JPH10147870A (ja) | 液体原料の気化装置 | |
JP4433392B2 (ja) | 気化器 | |
JP4419526B2 (ja) | 気化器の気化性能評価方法 | |
KR970060362A (ko) | 복합산화물 박막제조용 화학기상증착장치 | |
JPH11128719A (ja) | 溶液気化装置及び成膜装置 | |
KR20010077004A (ko) | 액체원료 기화장치 | |
JP2004124195A (ja) | Cvd成膜装置及びcvd成膜方法 | |
JPH10280149A (ja) | ガス噴射装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20031224 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20031226 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080109 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090109 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090109 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100109 Year of fee payment: 6 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110109 Year of fee payment: 7 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110109 Year of fee payment: 7 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120109 Year of fee payment: 8 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130109 Year of fee payment: 9 |
|
LAPS | Cancellation because of no payment of annual fees |