KR970060362A - 복합산화물 박막제조용 화학기상증착장치 - Google Patents

복합산화물 박막제조용 화학기상증착장치 Download PDF

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KR970060362A
KR970060362A KR1019960000723A KR19960000723A KR970060362A KR 970060362 A KR970060362 A KR 970060362A KR 1019960000723 A KR1019960000723 A KR 1019960000723A KR 19960000723 A KR19960000723 A KR 19960000723A KR 970060362 A KR970060362 A KR 970060362A
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thin film
oxide thin
vapor deposition
chemical vapor
deposition apparatus
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KR1019960000723A
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KR100425672B1 (ko
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김광영
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구자홍
Lg 전자 주식회사
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/404—Oxides of alkaline earth metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 발명은 복합산화물 박막제조용 화학기상증착장치에 관한 것으로, 종래의 LSMCD 장치의 경우 습식공정이므로 단차피복성 및 막질이 양호치 못하고, SLD-CVD 장치는 증발기내에서 증발과정 중에 온도구배 등에 의해서 이송장치 내에서 전구체의 열분해가 발생하여 막힘현상(CLOGGING)이 발생함으로써 재현성 있는 공정을 얻기가 어려운 문제점이 있었던 바, 본 발명의 복합산화물 박막제조용 화학기상증착장치는 초음파진동자(22)에 의해 생성된 액체유적을 외부가열하고, 비접촉하여 플래시 이베포레이션시키는 방식으로 증기화 하여 증착공정을 진행하는 장치로서, 종래의 LSMCD 장치나 LSD-CVD 장치 보다 단차 피복성 및 막질이 향상되고, 이송장치내의 막힘현상(CLOGGING)이 방지되어 재현성있는 공정진행이 가능한 효과가 있다.

Description

복합산화물 박막제조용 화학기상증착장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명 복합산화물 박막제조용 화학기상증착장치의 구성을 보인 개략 구성도.

Claims (11)

  1. 복합산화물 전구체를 액체유적화 시켜서 공급하기 위한 액체유적발생부와, 상기 액체유적을 플래시 이베포레이션으로 증기화시키기 위한 증기 발생부와, 상기 증기발생부에서 공급되는 증기를 기판에 증착시키기 위한 반응부와, 그 반응부에서 발생된 반응부산물을 외부로 배출하기 위한 배출부로 구성된 것을 특징으로 하는 복합산화물 박막제조용 화학기상증착 장치.
  2. 제1항에 있어서, 상기 액체유적발생부는 전구체가 수납되는 수납용기와, 전구체를 액체유적으로 만들기 위한 초음파진동자와, 그 초음파진동자에서 발생된 액체유적을 이송시키기 위한 제1 이송가스공급용기로 구성된 것을 특징으로 하는 복합산화물 박막제조용 화학기상증착 장치.
  3. 제1항에 있어서, 상기 증기발생부는 상기 액체유적과 이송가스의 흐름을 조절하기 위한 유량조절기와, 상기 유량조절기를 통하여 공급된 액체유적을 증기화시키기 위한 증발기와, 상기 증기를 이송시키기 위한 제2이송가스공급용기로 구성된 것을 특징으로 하는 복합산화물 박막제조용 화학기상증착 장치.
  4. 제1항에 있어서, 상기 반응부는 공정 챔버와, 그 챔버의 내측 상부에 설치되며 상기 증발기에서 공급되는 증기를 기판에 분사하기 위한 노즐과, 그 노즐의 하부에 설치되며 상기 기판을 장착하기 위한 히터테이블로 구성된 것을 특징으로 하는 복합산화물 박막제조용 화학기상증착 장치.
  5. 제1항에 있어서, 상기 배출부는 상기 공정 챔버에 발생한 반응부산물을 냉각시키기 위한 냉각트랩과, 상기 반응부산물을 외부로 펌핑과 아울러 상기 공정 챔버의 내부를 진공상태로 유지시키기 위한 진공펌프로 구성된 것을 특징으로 하는 복합산화물 박막제조용 화학기상증착 장치.
  6. 제3항에 있어서, 상기 증발기는 석영관으로 되어 있는 것을 특징으로 하는 복합산화물 박막제조용 화학기상증착 장치.
  7. 제6항에 있어서, 상기 석영관의 외부에는 코일을 감싸도록 설치하여 석영관의 내부 온도를 일정하게 유지 시켜주도록 한 것을 특징으로 하는 복합산화물 박막제조용 화학기상증착 장치.
  8. 제1항에 있어서, 상기 복합산화물 전구체는 (Ba, Sr)TiO3인 것을 특징으로 하는 복합산화물 박막제조용 화학기상증착 장치.
  9. 제1항에 있어서, 상기 복합산화물 전구체는 YBa2Cu2O7-x인 것을 특징으로 하는 복합산화물 박막제조용 화학기상증착 장치.
  10. 제1항에 있어서, 상기 복합산화물 전구체는 Pb(Zr, Ti)O3인 것을 특징으로 하는 복합산화물 박막제조용 화학기상증착 장치.
  11. 제1항에 있어서, 상기 복합산화물 전구체는 SrBi2Ta2O9인 것을 특징으로 하는 복합산화물 박막제조용 화학기상증착 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960000723A 1996-01-16 1996-01-16 복합산화물박막제조용화학기상증착장치 KR100425672B1 (ko)

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KR1019960000723A KR100425672B1 (ko) 1996-01-16 1996-01-16 복합산화물박막제조용화학기상증착장치

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KR1019960000723A KR100425672B1 (ko) 1996-01-16 1996-01-16 복합산화물박막제조용화학기상증착장치

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KR100425672B1 KR100425672B1 (ko) 2004-07-05

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020020508A (ko) * 2000-09-09 2002-03-15 윤종용 화학기상증착장치
KR100460304B1 (ko) * 2002-07-26 2004-12-04 주식회사 선익시스템 유기이엘 디스플레이의 박막형성 시스템
KR100465821B1 (ko) * 2001-06-14 2005-01-13 김태곤 반도체 및 액정디스플레이 제조시 반응 부산물의 제거방법 및 이 방법을 수행하기 위한 장치
WO2020112997A1 (en) * 2018-11-29 2020-06-04 Tsi Incorporated Reducing or eliminating liquid de-gassing

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020020508A (ko) * 2000-09-09 2002-03-15 윤종용 화학기상증착장치
KR100465821B1 (ko) * 2001-06-14 2005-01-13 김태곤 반도체 및 액정디스플레이 제조시 반응 부산물의 제거방법 및 이 방법을 수행하기 위한 장치
KR100460304B1 (ko) * 2002-07-26 2004-12-04 주식회사 선익시스템 유기이엘 디스플레이의 박막형성 시스템
WO2020112997A1 (en) * 2018-11-29 2020-06-04 Tsi Incorporated Reducing or eliminating liquid de-gassing
US11413556B2 (en) 2018-11-29 2022-08-16 Tsi Incorporated Reducing or eliminating liquid de-gassing

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