JP2001506313A - アンダーフィル密封材として有用な熱硬化性樹脂組成物 - Google Patents
アンダーフィル密封材として有用な熱硬化性樹脂組成物Info
- Publication number
- JP2001506313A JP2001506313A JP51020999A JP51020999A JP2001506313A JP 2001506313 A JP2001506313 A JP 2001506313A JP 51020999 A JP51020999 A JP 51020999A JP 51020999 A JP51020999 A JP 51020999A JP 2001506313 A JP2001506313 A JP 2001506313A
- Authority
- JP
- Japan
- Prior art keywords
- component
- composition
- epoxy resin
- parts
- methylimidizole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 229920001187 thermosetting polymer Polymers 0.000 title claims abstract description 46
- 239000011342 resin composition Substances 0.000 title claims abstract description 29
- 239000000565 sealant Substances 0.000 title abstract description 9
- 239000000203 mixture Substances 0.000 claims abstract description 98
- 239000004065 semiconductor Substances 0.000 claims abstract description 47
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 44
- 239000003822 epoxy resin Substances 0.000 claims abstract description 43
- 239000004643 cyanate ester Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000004849 latent hardener Substances 0.000 claims abstract description 6
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 22
- -1 glycidyl ester Chemical class 0.000 claims description 22
- 239000004593 Epoxy Substances 0.000 claims description 17
- 229920005989 resin Polymers 0.000 claims description 16
- 239000011347 resin Substances 0.000 claims description 16
- 239000003795 chemical substances by application Substances 0.000 claims description 15
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 claims description 14
- 150000002170 ethers Chemical class 0.000 claims description 11
- 229920003986 novolac Polymers 0.000 claims description 11
- 125000003118 aryl group Chemical group 0.000 claims description 9
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 9
- 239000007795 chemical reaction product Substances 0.000 claims description 7
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000004842 bisphenol F epoxy resin Substances 0.000 claims description 6
- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 claims description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 5
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 claims description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims description 4
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 claims description 4
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 claims description 4
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 claims description 4
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 claims description 3
- 239000007983 Tris buffer Substances 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 229930003836 cresol Natural products 0.000 claims description 3
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 150000002989 phenols Chemical class 0.000 claims description 3
- 239000000047 product Substances 0.000 claims description 3
- 229920001169 thermoplastic Polymers 0.000 claims description 3
- 239000004416 thermosoftening plastic Substances 0.000 claims description 3
- UFKLQICEQCIWNE-UHFFFAOYSA-N (3,5-dicyanatophenyl) cyanate Chemical compound N#COC1=CC(OC#N)=CC(OC#N)=C1 UFKLQICEQCIWNE-UHFFFAOYSA-N 0.000 claims description 2
- YDCUTCGACVVRIQ-UHFFFAOYSA-N (3,6-dicyanatonaphthalen-1-yl) cyanate Chemical compound N#COC1=CC(OC#N)=CC2=CC(OC#N)=CC=C21 YDCUTCGACVVRIQ-UHFFFAOYSA-N 0.000 claims description 2
- QQZZMAPJAKOSNG-UHFFFAOYSA-N (3-cyanatophenyl) cyanate Chemical group N#COC1=CC=CC(OC#N)=C1 QQZZMAPJAKOSNG-UHFFFAOYSA-N 0.000 claims description 2
- OFIWROJVVHYHLQ-UHFFFAOYSA-N (7-cyanatonaphthalen-2-yl) cyanate Chemical compound C1=CC(OC#N)=CC2=CC(OC#N)=CC=C21 OFIWROJVVHYHLQ-UHFFFAOYSA-N 0.000 claims description 2
- SEULWJSKCVACTH-UHFFFAOYSA-N 1-phenylimidazole Chemical compound C1=NC=CN1C1=CC=CC=C1 SEULWJSKCVACTH-UHFFFAOYSA-N 0.000 claims description 2
- 125000004204 2-methoxyphenyl group Chemical group [H]C1=C([H])C(*)=C(OC([H])([H])[H])C([H])=C1[H] 0.000 claims description 2
- WXVMBZDFEQHMFC-UHFFFAOYSA-N [2-chloro-4-[(3-chloro-4-cyanatophenyl)methyl]phenyl] cyanate Chemical compound C1=C(OC#N)C(Cl)=CC(CC=2C=C(Cl)C(OC#N)=CC=2)=C1 WXVMBZDFEQHMFC-UHFFFAOYSA-N 0.000 claims description 2
- SNYVZKMCGVGTKN-UHFFFAOYSA-N [4-(4-cyanatophenoxy)phenyl] cyanate Chemical compound C1=CC(OC#N)=CC=C1OC1=CC=C(OC#N)C=C1 SNYVZKMCGVGTKN-UHFFFAOYSA-N 0.000 claims description 2
- HEJGXMCFSSDPOA-UHFFFAOYSA-N [4-(4-cyanatophenyl)phenyl] cyanate Chemical group C1=CC(OC#N)=CC=C1C1=CC=C(OC#N)C=C1 HEJGXMCFSSDPOA-UHFFFAOYSA-N 0.000 claims description 2
- AHZMUXQJTGRNHT-UHFFFAOYSA-N [4-[2-(4-cyanatophenyl)propan-2-yl]phenyl] cyanate Chemical compound C=1C=C(OC#N)C=CC=1C(C)(C)C1=CC=C(OC#N)C=C1 AHZMUXQJTGRNHT-UHFFFAOYSA-N 0.000 claims description 2
- 229960004050 aminobenzoic acid Drugs 0.000 claims description 2
- 150000001491 aromatic compounds Chemical class 0.000 claims description 2
- 239000004305 biphenyl Substances 0.000 claims description 2
- 239000004841 bisphenol A epoxy resin Substances 0.000 claims description 2
- 239000000194 fatty acid Substances 0.000 claims description 2
- 239000003337 fertilizer Substances 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims description 2
- 239000004417 polycarbonate Substances 0.000 claims description 2
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- 150000008442 polyphenolic compounds Chemical class 0.000 claims description 2
- 235000013824 polyphenols Nutrition 0.000 claims description 2
- 239000001294 propane Substances 0.000 claims description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims 4
- XKZQKPRCPNGNFR-UHFFFAOYSA-N 2-(3-hydroxyphenyl)phenol Chemical compound OC1=CC=CC(C=2C(=CC=CC=2)O)=C1 XKZQKPRCPNGNFR-UHFFFAOYSA-N 0.000 claims 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 claims 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims 1
- 241000218691 Cupressaceae Species 0.000 claims 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims 1
- PPZSVSGWDQKBIW-UHFFFAOYSA-N [4-bis(4-cyanatophenoxy)phosphanyloxyphenyl] cyanate Chemical compound C1=CC(OC#N)=CC=C1OP(OC=1C=CC(OC#N)=CC=1)OC1=CC=C(OC#N)C=C1 PPZSVSGWDQKBIW-UHFFFAOYSA-N 0.000 claims 1
- 230000005494 condensation Effects 0.000 claims 1
- 238000009833 condensation Methods 0.000 claims 1
- 230000032050 esterification Effects 0.000 claims 1
- 238000005886 esterification reaction Methods 0.000 claims 1
- 150000003839 salts Chemical class 0.000 claims 1
- 230000035939 shock Effects 0.000 abstract description 4
- 238000013007 heat curing Methods 0.000 abstract description 3
- 238000001723 curing Methods 0.000 description 16
- 150000001913 cyanates Chemical group 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 9
- 238000004377 microelectronic Methods 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 7
- 125000004432 carbon atom Chemical group C* 0.000 description 6
- 239000000945 filler Substances 0.000 description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 5
- 239000004848 polyfunctional curative Substances 0.000 description 5
- KUBDPQJOLOUJRM-UHFFFAOYSA-N 2-(chloromethyl)oxirane;4-[2-(4-hydroxyphenyl)propan-2-yl]phenol Chemical compound ClCC1CO1.C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 KUBDPQJOLOUJRM-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 210000004556 brain Anatomy 0.000 description 3
- 235000013877 carbamide Nutrition 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000008393 encapsulating agent Substances 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- 150000003923 2,5-pyrrolediones Chemical class 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 150000001299 aldehydes Chemical class 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000012783 reinforcing fiber Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000005382 thermal cycling Methods 0.000 description 2
- 150000003672 ureas Chemical class 0.000 description 2
- GUGZCSAPOLLKNG-UHFFFAOYSA-N (4-cyanatophenyl) cyanate Chemical compound N#COC1=CC=C(OC#N)C=C1 GUGZCSAPOLLKNG-UHFFFAOYSA-N 0.000 description 1
- UGMKNMPRUHJNQK-UHFFFAOYSA-N (4-methylphenyl) cyanate Chemical compound CC1=CC=C(OC#N)C=C1 UGMKNMPRUHJNQK-UHFFFAOYSA-N 0.000 description 1
- 125000004208 3-hydroxyphenyl group Chemical group [H]OC1=C([H])C([H])=C([H])C(*)=C1[H] 0.000 description 1
- MIFGCULLADMRTF-UHFFFAOYSA-N 4-[(4-hydroxy-3-methylphenyl)methyl]-2-methylphenol Chemical compound C1=C(O)C(C)=CC(CC=2C=C(C)C(O)=CC=2)=C1 MIFGCULLADMRTF-UHFFFAOYSA-N 0.000 description 1
- FAUAZXVRLVIARB-UHFFFAOYSA-N 4-[[4-[bis(oxiran-2-ylmethyl)amino]phenyl]methyl]-n,n-bis(oxiran-2-ylmethyl)aniline Chemical compound C1OC1CN(C=1C=CC(CC=2C=CC(=CC=2)N(CC2OC2)CC2OC2)=CC=1)CC1CO1 FAUAZXVRLVIARB-UHFFFAOYSA-N 0.000 description 1
- WFCQTAXSWSWIHS-UHFFFAOYSA-N 4-[bis(4-hydroxyphenyl)methyl]phenol Chemical compound C1=CC(O)=CC=C1C(C=1C=CC(O)=CC=1)C1=CC=C(O)C=C1 WFCQTAXSWSWIHS-UHFFFAOYSA-N 0.000 description 1
- 229920003319 Araldite® Polymers 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- YKONYNBAMHVIMF-UHFFFAOYSA-N [2,6-dichloro-4-[2-(3,5-dichloro-4-cyanatophenyl)propan-2-yl]phenyl] cyanate Chemical compound C=1C(Cl)=C(OC#N)C(Cl)=CC=1C(C)(C)C1=CC(Cl)=C(OC#N)C(Cl)=C1 YKONYNBAMHVIMF-UHFFFAOYSA-N 0.000 description 1
- CNUHQZDDTLOZRY-UHFFFAOYSA-N [4-(4-cyanatophenyl)sulfanylphenyl] cyanate Chemical compound C1=CC(OC#N)=CC=C1SC1=CC=C(OC#N)C=C1 CNUHQZDDTLOZRY-UHFFFAOYSA-N 0.000 description 1
- AUYQDAWLRQFANO-UHFFFAOYSA-N [4-[(4-cyanatophenyl)methyl]phenyl] cyanate Chemical compound C1=CC(OC#N)=CC=C1CC1=CC=C(OC#N)C=C1 AUYQDAWLRQFANO-UHFFFAOYSA-N 0.000 description 1
- HYAOCWBXRFEHDV-UHFFFAOYSA-N [4-bis(4-cyanatophenoxy)phosphoryloxyphenyl] cyanate Chemical compound C=1C=C(OC#N)C=CC=1OP(OC=1C=CC(OC#N)=CC=1)(=O)OC1=CC=C(OC#N)C=C1 HYAOCWBXRFEHDV-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003377 acid catalyst Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001414 amino alcohols Chemical class 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 210000000941 bile Anatomy 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- VCCBEIPGXKNHFW-UHFFFAOYSA-N biphenyl-4,4'-diol Chemical group C1=CC(O)=CC=C1C1=CC=C(O)C=C1 VCCBEIPGXKNHFW-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000004566 building material Substances 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 150000001896 cresols Chemical class 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- SLGWESQGEUXWJQ-UHFFFAOYSA-N formaldehyde;phenol Chemical compound O=C.OC1=CC=CC=C1 SLGWESQGEUXWJQ-UHFFFAOYSA-N 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920005547 polycyclic aromatic hydrocarbon Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 239000011949 solid catalyst Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/4007—Curing agents not provided for by the groups C08G59/42 - C08G59/66
- C08G59/4014—Nitrogen containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
- C08G59/686—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01037—Rubidium [Rb]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Organic Chemistry (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Epoxy Resins (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Sealing Material Composition (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1. 半導体デバイスと、このデバイスが電気的に接続される回路基板との間を 密封的に充填することのできる熱硬化性樹脂組成物において、 a) エポキシ樹脂成分と、 b) (i)シアネートエステル成分、及び (ii)イミジゾール成分 を含む潜在硬化剤成分と、 を含む熱硬化性樹脂組成物。 2. 前記エポキシ樹脂が少なくとも1つの多官能性エポキシ樹脂を含む請求の 範囲1の組成物。 3. 前記エポキシ樹脂成分が、C6−C28のアルキルグリシジルエーテル;C6 −C28の脂肪酸グリシジルエステル;C6−C28のアルキルフェノールグリシジ ルエーテル;ピロカテコール、レゾルシノール、ヒドロキノン、4,4’−ジヒ ドロキシジフェニルメタン、4,4’−ジヒドロキシ−3,3’−ジメチルジフ ェニルメタン、4,4’−ジヒドロキシジフェニルジメチルメタン、4,4’− ジヒドロキシジフェニルメチルメタン、4,4’−ジヒドロキシジフェニルシク ロヘキサン、4,4’−ジヒドロキシ−3,3’−ジメチルジフェニルプロパン 、4,4’−ジヒドロキシジフェニルスルホン、及びトリス(4−ヒドロキシフ ェニル)メタンのグリシジルエーテル類;上述した各ジフェノール類の塩素化物 及び臭素化物のポリグリシジルエーテル類;ノボラックのポリグリシジルエーテ ル類;芳香族ヒドロカルボン酸の塩をジハロアルカン又はジハロゲンジアルキル エーテルでエステル化することにより得られるジフェノール類のエーテルをエス テル化することにより得られるジフェノール類のポリグリシジルエーテル類;フ ェノール類を少なくとも2個のハロゲン原子の含まれる長鎖状ハロゲン化パラフ ィンと縮合させることによって得られるポリフェノールのポリグリシジルエーテ ル類;N,N’−ジグリシジル−アニリン;N,N’−ジメチル−N,N’−ジ グリシジル−4,4’−ジアミノジフェニルメタン;N,N,N’,N’−テ トラグリシジル−4,4’−ジアミノジフェニルメタン;N−ジグリシジル−4 −アミノフェニルグリシジルエーテル;N,N,N’,N’−テトラグリシジル − 1,3−プロピレンビス−4−アミノ安息香酸;ビスフェノールAエポキシ 樹脂、ビスフェノールFエポキシ樹脂、フェノールノボラックエポキシ樹脂及び クレゾールノボラックエポキシ樹胞からなる群より選ばれたものを含む請求の範 囲1の組成物。 4. 前記エポキシ樹脂成分がビスフェノールFエポキシ樹脂とエポキシクレゾ ールノボラック樹脂とを含む請求の範囲1の組成物。 5. 前記エポキシ樹脂成分が、約80部のビスフェノールFエポキシ樹脂と、 約20部のエポキシクレゾールノボラック樹脂とを含む請求の範囲1の組成物。 6. 前記潜在的硬化剤成分が、0部から約30部までの量で用いられる請求の 範囲1の組成物。 7. 前記シアネートエステル成分が、各分子の上に少なくとも1個のシアネー トエステル基を有する芳香族化合物から選ばれる請求の範囲1の組成物。 8. 前記シアネートエステル成分がAr(OCN)mで表わされ、その際Ar が芳香族残基であり、そしてmが2ないし5の整数である請求の範囲1の組成物 。 9. 前記シアネートエステル成分が、1,3−ジシアナトベンゼン;1,4− ジシアナトベンゼン;1,3,5−トリシアナトベンゼン;1,3−1,4−、 1,6−、1,8−2,6−又は2,7−ジシアナトナフタレン;1,3,6 −トリシアナトナフタレン;4,4’−ジシアナトービフェニル;ビス(4−シ アナトフェニル)メタン及び3,3’,5,5’−テトラメチルビス(4−シア ナトフェニル)メタン;2,2−ビス(3,5−ジクロロ−4−シアナトフェニ ル)プロパン;2,2−ビス(3,5−ジブロモ−4−ジシアナトフェニル)プ ロパン;ビス(4−シアナトフェニル)エーテル;ビス(4−シアナトフェニル )スルフィド;2,2−ビス(4−シアナトフェニル)プロパン;トリス(4− シアナトフェニル)−ホスファイト;トリス(4−シアナトフェニル)ホスフェ ート;ビス(3−クロロ−4−シアナトフェニル)メタン;シアネート化ノボ ラック;1,3−ビス{4−シアナトフェニル−1−(メチルエチリデン)}ベ ンゼン及びシアネート化ビスフェノール末端のポリカーボネート又は他の熱可塑 性オリゴマーからなる群より選ばれる請求の範囲1の組成物。 10. 前記シアネートエステル成分が、1,3−ビス{4−シアナトフェニル −1−(メチルエチリデン)}ベンゼンである請求の範囲1の組成物。 11. 前記シアネートエステル成分が、0部から約15部までの範囲内の量で 使用される請求の範囲1の組成物。 12. イミジゾール成分が、イミジゾール、イソイミジゾール、2−メチルイ ミジゾール、2−エチル−4−メチルイミジゾール、2,4−ジメチルイミジゾ ール、ブチルイミジゾール、2−ヘプタデセニル−4−メチルイミジゾール、2 −メチルイミジゾール、2−ウンデセニルイミジゾール、1−ビニル−2−メチ ルイミジゾール、2−n−ヘプタデシルイミジゾール、2−ウンデシルイミジゾ ール、2−ヘプタデシルイミジゾール、2−フェニルイミジゾール、1−ベンジ ル−2−メチルイミジゾール、1−プロピル−2−メチルイミジゾール、1−シ アノエチル−2−メチルイミジゾール、1−シアノエチル−2−エチル−4−メ チルイミジゾール、1−シアノエチル−2−ウンデシルイミジゾール、1−シア ノエチル−2−フェニルイミジゾール、1−グアナミノエチル−2−メチルイミ ジゾール及びイミジゾールメチルイミジゾールの付加生成物及びイミジゾールと トリメリット酸との付加物、2−n−ヘプタデシル−4−メチルイミジゾール、 フェニルイミダゾール、ベンジルイミジゾール、2−メチル−4,5−ジフェニ ルイミジゾール、2,3,5−トリフェニルイミジゾール、2−スチリルイミジ ゾール、1−(ドデシルベンジル)−2−メチルイミジゾール、2−(2−ヒド ロキシ−4−t−ブチルフェニル)−4,5−ジフェニルイミジゾール、2−( 2−メトキシフェニル)−4,5−ジフェニルイミジゾール、2−(3−ヒドロ キシフェニル)−4,5−ジフェニルイミジゾール、2−(p−ジメチル−アミ ノフェニル)−4,5−ジフェニルイミジゾール、2−(2−ヒドロキシフェニ ル)−4,5−ジフェニルイミジゾール、ジ(4,5−ジフェニル−2−イミジ ゾール)−ベンゼン−1,4、2−ナフチル−4,5−ジフェニルイミジゾール 、1−ベンジル−2−メチルイミジゾール、2−p−メトキシスチリルイミジ ゾール及びそれらの種々の組み合わせからなる群より選ばれたものである請求の 範囲1の組成物。 13. 前記イミジゾール成分を0部から約15部までの範囲の量で使用する請 求の範囲1の組成物。 14. 半導体デバイスと、この半導体デバイスがそれに電気的に接続される回 路基板との間を密封的に充填することのできる熱硬化性樹脂組成物において、 a) ビスフェノールFエポキシ樹胞を含む約92重量部のエポキシ樹脂成分及 び b) 4部が、1,3−ビス{4−シアナトフェニル−1−(メチルエチリデン )}ベンゼンを含むシアネートエステル成分(i)よりなり、そして4部 が、2−エチル−4−メチルイミジゾールを含むイミジゾール成分(ii )よりなる約8重量部の潜在的硬化成分 を含む熱硬化性樹胞組成物。 15. 半導体デバイスと、この半導体デバイスがそれに電気的に接続される回 路基板との間を密封的に充填することのできる熱硬化性樹脂組成物において、 a) ビスフェノールFエポキシ樹脂を含む約88重量部のエポキシ樹脂成分及 び b) 4部が、1,3−ビス{4−シアナトフェニル−1−(メチルエチリデン )}ベンゼンを含むシアネートエステル成分よりなり、そして8部が、2 −エチル−4−メチルイミジゾールを含むイミジゾール成分よりなる約1 2重量部の潜在的硬化成分 を含む熱硬化性樹脂組成物。 16. 25℃において約50000mPa・sよりも低い粘度を有する請求の 範囲1の組成物。 17. 請求の範囲1ないし16のいずれか1つの反応生成物。 18. キャリア基材の上に取り付けられた半導体チップを有する半導体デバイ スと、この半導体デバイスが電気的にそれに接続される回路基板とを含み、 前記半導体デバイスのキャリア基材と前記回路基板との間の空間がエポキ シ樹胞成分とシアネートエステル成分及びイミジゾール成分を含む潜在的硬化剤 成分とを含む熱硬化性樹脂組成物の反応生成物で密封されている半導体デバイス の搭載構造。 19. 熱硬化性樹胞組成物が請求の範囲14又は15のものである請求の範囲 18の構造。 20. キャリア基材の上に取り付けられた半導体チップを含む半導体デバイス を回路基板に電気的に接続させる工程と、 前記半導体デバイスのキャリア基材と前記回路基板との間の間隙の中に、 エポキシ樹肥成分と、シアネートエステル成分及びイミジゾール成分を含む潜在 的硬化剤成分とを含む熱硬化性樹胞組成物を浸透させる工程と、 その組成物を熱の適用によって硬化させる工程と を含む半導体デバイスの組立て方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US5359297P | 1997-07-24 | 1997-07-24 | |
US60/053,592 | 1997-07-24 | ||
PCT/US1998/015578 WO1999005196A1 (en) | 1997-07-24 | 1998-07-22 | Thermosetting resin compositions useful as underfill sealants |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2001506313A true JP2001506313A (ja) | 2001-05-15 |
Family
ID=21985312
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51020999A Ceased JP2001506313A (ja) | 1997-07-24 | 1998-07-22 | アンダーフィル密封材として有用な熱硬化性樹脂組成物 |
Country Status (13)
Country | Link |
---|---|
US (1) | US6342577B1 (ja) |
EP (1) | EP0929592B1 (ja) |
JP (1) | JP2001506313A (ja) |
KR (1) | KR100571334B1 (ja) |
CN (1) | CN1197893C (ja) |
AT (1) | ATE320460T1 (ja) |
AU (1) | AU728193B2 (ja) |
BR (1) | BR9806065A (ja) |
CA (1) | CA2266314A1 (ja) |
DE (1) | DE69833865T2 (ja) |
ID (1) | ID21928A (ja) |
RU (1) | RU2195474C2 (ja) |
WO (1) | WO1999005196A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003086630A (ja) * | 2001-09-11 | 2003-03-20 | Fujitsu Ltd | 半導体装置の製造方法および半導体装置 |
WO2009047885A1 (ja) * | 2007-10-09 | 2009-04-16 | Adeka Corporation | 一液型シアネート-エポキシ複合樹脂組成物、その硬化物及びその製造方法、並びにそれを用いた封止用材料及び接着剤 |
US7768136B2 (en) | 2005-02-02 | 2010-08-03 | Sharp Kabushiki Kaisha | Sealed-by-resin type semiconductor device |
KR101553102B1 (ko) * | 2009-12-07 | 2015-09-14 | 헨켈 아이피 앤드 홀딩 게엠베하 | 열경화성 수지 조성물을 포함하는 반도체 장치의 신뢰성을 향상시키는 방법 |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG88747A1 (en) * | 1999-03-01 | 2002-05-21 | Motorola Inc | A method and machine for underfilling an assembly to form a semiconductor package |
US6670430B1 (en) * | 1999-12-17 | 2003-12-30 | Henkel Loctite Corporation | Thermosetting resin compositions comprising epoxy resins, adhesion promoters, and curatives based on the combination of nitrogen compounds and transition metal complexes |
US6617399B2 (en) * | 1999-12-17 | 2003-09-09 | Henkel Loctite Corporation | Thermosetting resin compositions comprising epoxy resins, adhesion promoters, curatives based on the combination of nitrogen compounds and transition metal complexes, and polysulfide tougheners |
US20050288458A1 (en) | 2002-07-29 | 2005-12-29 | Klemarczyk Philip T | Reworkable thermosetting resin composition |
US7012120B2 (en) | 2000-03-31 | 2006-03-14 | Henkel Corporation | Reworkable compositions of oxirane(s) or thirane(s)-containing resin and curing agent |
JP3711842B2 (ja) * | 2000-06-01 | 2005-11-02 | ソニーケミカル株式会社 | 異方性導電接続材料及び接続構造体 |
US6548575B2 (en) | 2000-12-13 | 2003-04-15 | National Starch And Chemical Investment Holding Corporation | High temperature underfilling material with low exotherm during use |
JP3866591B2 (ja) * | 2001-10-29 | 2007-01-10 | 富士通株式会社 | 電極間接続構造体の形成方法および電極間接続構造体 |
US6951907B1 (en) | 2001-11-19 | 2005-10-04 | Henkel Corporation | Composition of epoxy resin, secondary amine-functional adhesion promotor and curative of nitrogen-compound and transition metal complex |
US6893736B2 (en) * | 2001-11-19 | 2005-05-17 | Henkel Corporation | Thermosetting resin compositions useful as underfill sealants |
US6833629B2 (en) | 2001-12-14 | 2004-12-21 | National Starch And Chemical Investment Holding Corporation | Dual cure B-stageable underfill for wafer level |
US20040094751A1 (en) * | 2002-03-25 | 2004-05-20 | Toshiaki Ogiwara | Composition for filling through-holes in printed wiring boards |
KR101148051B1 (ko) * | 2005-12-26 | 2012-05-25 | 에스케이케미칼주식회사 | 에폭시 수지 조성물 |
US8053546B2 (en) * | 2007-06-11 | 2011-11-08 | Basf Se | Catalyst for curing epoxides |
WO2010068287A2 (en) * | 2008-12-11 | 2010-06-17 | Angion Biomedica Corp. | Small molecule modulators of hepatocyte growth factor (scatter factor) activity |
DE102009012195A1 (de) * | 2009-03-06 | 2010-09-09 | Siemens Aktiengesellschaft | Gießharzsystem für Isolatoren mit erhöhter Wärmeformbeständigkeit |
DE102009003132A1 (de) * | 2009-05-15 | 2010-11-18 | Robert Bosch Gmbh | Kunststoffformmasse sowie Verfahren zu deren Herstellung |
SG10201503091TA (en) * | 2010-04-21 | 2015-06-29 | Mitsubishi Gas Chemical Co | Heat curable composition |
RU2447093C1 (ru) * | 2011-01-19 | 2012-04-10 | Открытое акционерное общество "Институт пластмасс имени Г.С. Петрова" | Способ получения орто-крезолноволачной эпоксидной смолы и полимерная композиция на ее основе |
CN102559119A (zh) * | 2011-12-13 | 2012-07-11 | 北京海斯迪克新材料有限公司 | 一种具有良好流变稳定性的单组份环氧包封胶及制备方法 |
RU2492549C1 (ru) * | 2012-03-20 | 2013-09-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный технический университет имени Н.Э. Баумана" (МГТУ им. Н.Э. Баумана) | Способ сборки трехмерного электронного модуля |
TWI568764B (zh) * | 2012-06-08 | 2017-02-01 | Adeka股份有限公司 | 硬化性樹脂組成物、樹脂組成物、使用此等而成之樹脂片、及此等之硬化物 |
JP6202857B2 (ja) * | 2013-04-02 | 2017-09-27 | 株式会社東芝 | 電気機器用コーティング材 |
RU2597916C2 (ru) * | 2014-11-18 | 2016-09-20 | Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" (Госкорпорация "Росатом") | Полимерный матричный материал для кондиционирования низко- и среднеактивных отработанных ионообменных смол |
CN107406582B (zh) * | 2015-03-31 | 2020-01-17 | 三菱瓦斯化学株式会社 | 氰酸酯化合物、包含该化合物的固化性树脂组合物和其固化物 |
CN105356479B (zh) * | 2015-11-13 | 2017-12-08 | 湖南大学 | 一种c型串联滤波式级联svg及其负序补偿控制方法 |
KR102246076B1 (ko) * | 2015-11-17 | 2021-05-03 | 한국전자통신연구원 | 반도체 패키지의 제조 방법 |
US9988308B1 (en) * | 2016-05-05 | 2018-06-05 | Five Star Products, Inc. | Epoxy based material and applications therefore |
JPWO2021049390A1 (ja) | 2019-09-09 | 2021-03-18 | ||
WO2021193233A1 (ja) | 2020-03-25 | 2021-09-30 | 株式会社Adeka | 硬化性樹脂組成物、及び硬化性樹脂組成物の硬化収縮を抑制する方法 |
JPWO2022190745A1 (ja) | 2021-03-08 | 2022-09-15 | ||
CN114214019A (zh) * | 2021-12-02 | 2022-03-22 | 深圳斯多福新材料科技有限公司 | 一种可耐高低温的单组分胶黏剂的制备方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH448513A (de) | 1963-11-14 | 1967-12-15 | Bayer Ag | Verfahren zur Herstellung von geformten Gebilden auf Basis von Epoxydharzen |
GB1305702A (ja) | 1969-02-20 | 1973-02-07 | ||
US3862260A (en) | 1973-05-07 | 1975-01-21 | Union Carbide Corp | Epoxy curing system |
US4159976A (en) | 1977-03-10 | 1979-07-03 | Loctite Corporation | Curable systems containing epoxy resin and methanol or ethanol solvent to suppress the catalytic reaction between epoxy resin and an imidazole catalytic curing agent |
JPS55112256A (en) * | 1979-02-21 | 1980-08-29 | Mitsubishi Electric Corp | Thermosetting resin composition |
JPS56125449A (en) | 1980-01-29 | 1981-10-01 | Mitsubishi Gas Chem Co Inc | Curable resin composition |
US4528366A (en) | 1982-09-28 | 1985-07-09 | The Dow Chemical Company | Production of polytriazines from aromatic polycyanates with cobalt salt of a carboxylic acid as catalyst |
US4477629A (en) | 1983-07-27 | 1984-10-16 | The Dow Chemical Company | Cyanate-containing polymers |
US4751323A (en) | 1983-11-16 | 1988-06-14 | The Dow Chemical Company | Novel polyaromatic cyanates |
US4645803A (en) | 1984-02-29 | 1987-02-24 | American Cyanamid Company | Curable epoxy resin compositions |
JPS62275123A (ja) | 1986-05-23 | 1987-11-30 | Toray Ind Inc | プリプレグ用樹脂組成物 |
US4732962A (en) * | 1987-02-18 | 1988-03-22 | General Motors Corporation | High temperature epoxy tooling composition of bisphenol-A epoxy, trifunctional epoxy, anhydride curing agent and an imidazole catalyst |
US4859528A (en) | 1987-04-17 | 1989-08-22 | Hexcel Corporation | Composite tooling |
US4742148A (en) * | 1987-04-17 | 1988-05-03 | Hexcel Corporation | Modified imidazole latent epoxy resin catalysts and systems comprising them |
US4918157A (en) | 1987-07-08 | 1990-04-17 | Amoco Corporation | Thermosetting composition comprising cyanate ester, urea compound and epoxy resin |
JP3231814B2 (ja) * | 1991-07-12 | 2001-11-26 | ミネソタ マイニング アンド マニュファクチャリング カンパニー | 異方性導電膜 |
WO1996020242A1 (en) * | 1994-12-26 | 1996-07-04 | Ciba Specialty Chemicals Inc. | Curable resin compositions |
US5534356A (en) * | 1995-04-26 | 1996-07-09 | Olin Corporation | Anodized aluminum substrate having increased breakdown voltage |
JP3777732B2 (ja) * | 1996-10-15 | 2006-05-24 | 東レ株式会社 | 半導体装置用接着剤組成物およびそれを用いた半導体装置用接着剤シート |
US5969036A (en) * | 1997-06-20 | 1999-10-19 | The Dexter Corporation | Epoxy-containing die-attach compositions |
JP3591758B2 (ja) * | 1997-10-09 | 2004-11-24 | 住友ベークライト株式会社 | 液状注入封止アンダーフィル材 |
-
1998
- 1998-07-22 KR KR1019997002498A patent/KR100571334B1/ko not_active IP Right Cessation
- 1998-07-22 CA CA002266314A patent/CA2266314A1/en not_active Abandoned
- 1998-07-22 DE DE69833865T patent/DE69833865T2/de not_active Expired - Fee Related
- 1998-07-22 ID IDW990113A patent/ID21928A/id unknown
- 1998-07-22 EP EP98937187A patent/EP0929592B1/en not_active Expired - Lifetime
- 1998-07-22 AU AU85959/98A patent/AU728193B2/en not_active Ceased
- 1998-07-22 CN CNB988012065A patent/CN1197893C/zh not_active Expired - Fee Related
- 1998-07-22 US US09/269,067 patent/US6342577B1/en not_active Expired - Lifetime
- 1998-07-22 AT AT98937187T patent/ATE320460T1/de not_active IP Right Cessation
- 1998-07-22 RU RU99108717/04A patent/RU2195474C2/ru not_active IP Right Cessation
- 1998-07-22 WO PCT/US1998/015578 patent/WO1999005196A1/en active IP Right Grant
- 1998-07-22 BR BR9806065-1A patent/BR9806065A/pt not_active Application Discontinuation
- 1998-07-22 JP JP51020999A patent/JP2001506313A/ja not_active Ceased
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003086630A (ja) * | 2001-09-11 | 2003-03-20 | Fujitsu Ltd | 半導体装置の製造方法および半導体装置 |
KR100884295B1 (ko) * | 2001-09-11 | 2009-02-18 | 후지쯔 가부시끼가이샤 | 반도체 장치의 제조 방법 및 반도체 장치 |
US7768136B2 (en) | 2005-02-02 | 2010-08-03 | Sharp Kabushiki Kaisha | Sealed-by-resin type semiconductor device |
WO2009047885A1 (ja) * | 2007-10-09 | 2009-04-16 | Adeka Corporation | 一液型シアネート-エポキシ複合樹脂組成物、その硬化物及びその製造方法、並びにそれを用いた封止用材料及び接着剤 |
US7923516B2 (en) | 2007-10-09 | 2011-04-12 | Adeka Corporation | One liquid type cyanate-epoxy composite resin composition, its hardened material, manufacturing method thereof, and materials for sealing and adhesive agents using the same |
KR101553102B1 (ko) * | 2009-12-07 | 2015-09-14 | 헨켈 아이피 앤드 홀딩 게엠베하 | 열경화성 수지 조성물을 포함하는 반도체 장치의 신뢰성을 향상시키는 방법 |
Also Published As
Publication number | Publication date |
---|---|
AU728193B2 (en) | 2001-01-04 |
CA2266314A1 (en) | 1999-02-04 |
US6342577B1 (en) | 2002-01-29 |
DE69833865T2 (de) | 2006-10-05 |
CN1197893C (zh) | 2005-04-20 |
EP0929592A4 (en) | 2000-09-13 |
EP0929592B1 (en) | 2006-03-15 |
RU2195474C2 (ru) | 2002-12-27 |
AU8595998A (en) | 1999-02-16 |
EP0929592A1 (en) | 1999-07-21 |
ATE320460T1 (de) | 2006-04-15 |
ID21928A (id) | 1999-08-12 |
KR20000068623A (ko) | 2000-11-25 |
DE69833865D1 (de) | 2006-05-11 |
BR9806065A (pt) | 1999-08-31 |
WO1999005196A1 (en) | 1999-02-04 |
KR100571334B1 (ko) | 2006-04-14 |
CN1237186A (zh) | 1999-12-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2001506313A (ja) | アンダーフィル密封材として有用な熱硬化性樹脂組成物 | |
US6632893B2 (en) | Composition of epoxy resin, cyanate ester, imidazole and polysulfide tougheners | |
US7868113B2 (en) | Low shrinkage polyester thermosetting resins | |
JP4394281B2 (ja) | 硬化性のエポキシ−ベースの組成物 | |
KR101900534B1 (ko) | 반도체 인캡슐레이션용 에폭시 수지 조성물, 이를 이용한 반도체 소자 및 반도체 소자의 제조방법 | |
CN105073846A (zh) | 二烯/亲二烯体偶合物和具有可再加工性的热固性树脂组合物 | |
Li et al. | Syntheses and characterizations of thermally degradable epoxy resins. III | |
JP4718070B2 (ja) | アンダーフィル封止および補修方法 | |
US6492438B1 (en) | Electrically connectable adhesive agent for semiconductor | |
WO2003044089A1 (en) | Thermosetting resin compositions useful as underfill sealants | |
US7004375B2 (en) | Pre-applied fluxing underfill composition having pressure sensitive adhesive properties | |
KR20010043524A (ko) | 재작업 가능한 열경화성 수지 조성물 | |
US6670430B1 (en) | Thermosetting resin compositions comprising epoxy resins, adhesion promoters, and curatives based on the combination of nitrogen compounds and transition metal complexes | |
US20040155364A1 (en) | Reworkable thermosetting resin compositions | |
US6572980B1 (en) | Reworkable thermosetting resin compositions | |
US7108920B1 (en) | Reworkable compositions incorporating episulfide resins | |
US20050171301A1 (en) | Reworkable thermosetting resin compositions | |
MXPA99002815A (en) | Thermosetting resin compositions useful as underfill sealants | |
WO2008085144A1 (en) | Low shrinkage polyester thermosetting resins |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A72 | Notification of change in name of applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A721 Effective date: 20040928 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20040928 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050722 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070710 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070628 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20071010 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20071119 |
|
A313 | Final decision of rejection without a dissenting response from the applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A313 Effective date: 20080221 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20080401 |