JP2001326364A5 - - Google Patents
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- JP2001326364A5 JP2001326364A5 JP2001065813A JP2001065813A JP2001326364A5 JP 2001326364 A5 JP2001326364 A5 JP 2001326364A5 JP 2001065813 A JP2001065813 A JP 2001065813A JP 2001065813 A JP2001065813 A JP 2001065813A JP 2001326364 A5 JP2001326364 A5 JP 2001326364A5
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001065813A JP4785258B2 (ja) | 2000-03-10 | 2001-03-08 | 半導体装置及びその作製方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000-66588 | 2000-03-10 | ||
| JP2000066588 | 2000-03-10 | ||
| JP2000066588 | 2000-03-10 | ||
| JP2001065813A JP4785258B2 (ja) | 2000-03-10 | 2001-03-08 | 半導体装置及びその作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001326364A JP2001326364A (ja) | 2001-11-22 |
| JP2001326364A5 true JP2001326364A5 (ko) | 2008-02-28 |
| JP4785258B2 JP4785258B2 (ja) | 2011-10-05 |
Family
ID=26587183
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001065813A Expired - Fee Related JP4785258B2 (ja) | 2000-03-10 | 2001-03-08 | 半導体装置及びその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4785258B2 (ko) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4599603B2 (ja) * | 2003-02-12 | 2010-12-15 | シャープ株式会社 | トランジスタの製造方法 |
| TWI220072B (en) | 2003-02-19 | 2004-08-01 | Toppoly Optoelectronics Corp | TFT structure with LDD region and manufacturing process of the same |
| JP4510396B2 (ja) * | 2003-03-28 | 2010-07-21 | 統寶光電股▲分▼有限公司 | 薄膜トランジスタの製造方法 |
| JP2006100760A (ja) * | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
| US7911568B2 (en) * | 2005-05-13 | 2011-03-22 | Samsung Electronics Co., Ltd. | Multi-layered thin films, thin film transistor array panel including the same, and method of manufacturing the panel |
| WO2008088199A1 (en) * | 2007-01-18 | 2008-07-24 | Terasemicon Corporation. | Method for fabricating semiconductor device |
| JP2009260326A (ja) * | 2008-03-26 | 2009-11-05 | Advanced Lcd Technologies Development Center Co Ltd | 薄膜半導体装置およびその製造方法 |
| JP2009260329A (ja) * | 2008-03-27 | 2009-11-05 | Advanced Lcd Technologies Development Center Co Ltd | 薄膜半導体装置およびその製造方法 |
| KR101002666B1 (ko) * | 2008-07-14 | 2010-12-21 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
| KR101733196B1 (ko) * | 2010-09-03 | 2017-05-25 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 이의 제조 방법, 및 이를 구비한 표시 장치 |
| KR20130007283A (ko) * | 2011-06-30 | 2013-01-18 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 이를 구비한 표시 장치, 및 그 제조 방법 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3297937B2 (ja) * | 1992-10-16 | 2002-07-02 | ソニー株式会社 | 半導体装置及びその製造方法 |
| JP4115590B2 (ja) * | 1998-06-11 | 2008-07-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2000323484A (ja) * | 1999-05-07 | 2000-11-24 | Mitsubishi Electric Corp | 半導体装置及び半導体記憶装置 |
| JP4437570B2 (ja) * | 1999-07-12 | 2010-03-24 | 株式会社ルネサステクノロジ | 半導体装置及び半導体装置の製造方法 |
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2001
- 2001-03-08 JP JP2001065813A patent/JP4785258B2/ja not_active Expired - Fee Related