JP2001326178A - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法

Info

Publication number
JP2001326178A
JP2001326178A JP2001063900A JP2001063900A JP2001326178A JP 2001326178 A JP2001326178 A JP 2001326178A JP 2001063900 A JP2001063900 A JP 2001063900A JP 2001063900 A JP2001063900 A JP 2001063900A JP 2001326178 A JP2001326178 A JP 2001326178A
Authority
JP
Japan
Prior art keywords
semiconductor film
amorphous
region
polycrystalline semiconductor
tft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001063900A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001326178A5 (enExample
Inventor
Koichiro Tanaka
幸一郎 田中
Hideto Onuma
英人 大沼
Chiho Kokubo
千穂 小久保
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001063900A priority Critical patent/JP2001326178A/ja
Publication of JP2001326178A publication Critical patent/JP2001326178A/ja
Publication of JP2001326178A5 publication Critical patent/JP2001326178A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2001063900A 2000-03-08 2001-03-07 半導体装置及びその作製方法 Withdrawn JP2001326178A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001063900A JP2001326178A (ja) 2000-03-08 2001-03-07 半導体装置及びその作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000064186 2000-03-08
JP2000-64186 2000-03-08
JP2000063000 2000-03-08
JP2000-63000 2000-03-08
JP2001063900A JP2001326178A (ja) 2000-03-08 2001-03-07 半導体装置及びその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012161138A Division JP5483763B2 (ja) 2000-03-08 2012-07-20 液晶表示装置

Publications (2)

Publication Number Publication Date
JP2001326178A true JP2001326178A (ja) 2001-11-22
JP2001326178A5 JP2001326178A5 (enExample) 2008-02-28

Family

ID=27342606

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001063900A Withdrawn JP2001326178A (ja) 2000-03-08 2001-03-07 半導体装置及びその作製方法

Country Status (1)

Country Link
JP (1) JP2001326178A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003224070A (ja) * 2001-11-26 2003-08-08 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US6916693B2 (en) * 2000-03-08 2005-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7098084B2 (en) 2000-03-08 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7179756B2 (en) 2001-05-21 2007-02-20 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing thereof
US8119188B2 (en) 2001-06-08 2012-02-21 Semiconductor Energy Laboratory Co., Ltd. Process of manufacturing luminescent device
JP2015111744A (ja) * 2007-12-03 2015-06-18 株式会社半導体エネルギー研究所 半導体装置
CN109097545A (zh) * 2018-10-08 2018-12-28 吉林大学 激光预热与高频振动耦合非晶合金表面改性装置与方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07321335A (ja) * 1994-05-24 1995-12-08 Semiconductor Energy Lab Co Ltd 半導体装置の作成方法
JPH07335546A (ja) * 1994-06-14 1995-12-22 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JPH08339960A (ja) * 1994-07-01 1996-12-24 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH10107290A (ja) * 1996-09-27 1998-04-24 Sharp Corp 半導体装置およびその製造方法
JP2000068207A (ja) * 1999-09-13 2000-03-03 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07321335A (ja) * 1994-05-24 1995-12-08 Semiconductor Energy Lab Co Ltd 半導体装置の作成方法
JPH07335546A (ja) * 1994-06-14 1995-12-22 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JPH08339960A (ja) * 1994-07-01 1996-12-24 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH10107290A (ja) * 1996-09-27 1998-04-24 Sharp Corp 半導体装置およびその製造方法
JP2000068207A (ja) * 1999-09-13 2000-03-03 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6916693B2 (en) * 2000-03-08 2005-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7098084B2 (en) 2000-03-08 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7183145B2 (en) 2000-03-08 2007-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7638377B2 (en) 2000-03-08 2009-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7179756B2 (en) 2001-05-21 2007-02-20 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing thereof
US7485584B2 (en) 2001-05-21 2009-02-03 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing thereof
US8119188B2 (en) 2001-06-08 2012-02-21 Semiconductor Energy Laboratory Co., Ltd. Process of manufacturing luminescent device
JP2003224070A (ja) * 2001-11-26 2003-08-08 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2015111744A (ja) * 2007-12-03 2015-06-18 株式会社半導体エネルギー研究所 半導体装置
CN109097545A (zh) * 2018-10-08 2018-12-28 吉林大学 激光预热与高频振动耦合非晶合金表面改性装置与方法
CN109097545B (zh) * 2018-10-08 2023-09-15 吉林大学 激光预热与高频振动耦合非晶合金表面改性装置与方法

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