JP2001326178A - 半導体装置及びその作製方法 - Google Patents
半導体装置及びその作製方法Info
- Publication number
- JP2001326178A JP2001326178A JP2001063900A JP2001063900A JP2001326178A JP 2001326178 A JP2001326178 A JP 2001326178A JP 2001063900 A JP2001063900 A JP 2001063900A JP 2001063900 A JP2001063900 A JP 2001063900A JP 2001326178 A JP2001326178 A JP 2001326178A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- amorphous
- region
- polycrystalline semiconductor
- tft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
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- 238000002425 crystallisation Methods 0.000 claims abstract description 96
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 79
- 239000002184 metal Substances 0.000 claims abstract description 79
- 238000005224 laser annealing Methods 0.000 claims abstract description 67
- 238000000034 method Methods 0.000 claims description 138
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- 239000004973 liquid crystal related substance Substances 0.000 claims description 38
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- 229910052698 phosphorus Inorganic materials 0.000 claims description 11
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- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 230000001737 promoting effect Effects 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 3
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- 238000005530 etching Methods 0.000 description 38
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 14
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- 238000005984 hydrogenation reaction Methods 0.000 description 5
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- 239000004642 Polyimide Substances 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
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- 238000004151 rapid thermal annealing Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
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- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000005041 Mylar™ Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
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- 230000008901 benefit Effects 0.000 description 2
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- 229910052796 boron Inorganic materials 0.000 description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
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- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
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- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- 101100214488 Solanum lycopersicum TFT2 gene Proteins 0.000 description 1
- 241000862969 Stella Species 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
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- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
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- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
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- 238000010943 off-gassing Methods 0.000 description 1
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- 239000011591 potassium Substances 0.000 description 1
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- 238000002310 reflectometry Methods 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- 238000009751 slip forming Methods 0.000 description 1
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- 239000010935 stainless steel Substances 0.000 description 1
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
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- 239000011573 trace mineral Substances 0.000 description 1
- 235000013619 trace mineral Nutrition 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001063900A JP2001326178A (ja) | 2000-03-08 | 2001-03-07 | 半導体装置及びその作製方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000-64186 | 2000-03-08 | ||
| JP2000-63000 | 2000-03-08 | ||
| JP2000064186 | 2000-03-08 | ||
| JP2000063000 | 2000-03-08 | ||
| JP2001063900A JP2001326178A (ja) | 2000-03-08 | 2001-03-07 | 半導体装置及びその作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012161138A Division JP5483763B2 (ja) | 2000-03-08 | 2012-07-20 | 液晶表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001326178A true JP2001326178A (ja) | 2001-11-22 |
| JP2001326178A5 JP2001326178A5 (enExample) | 2008-02-28 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001063900A Withdrawn JP2001326178A (ja) | 2000-03-08 | 2001-03-07 | 半導体装置及びその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001326178A (enExample) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003224070A (ja) * | 2001-11-26 | 2003-08-08 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| US6916693B2 (en) * | 2000-03-08 | 2005-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US7098084B2 (en) | 2000-03-08 | 2006-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US7179756B2 (en) | 2001-05-21 | 2007-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing thereof |
| US8119188B2 (en) | 2001-06-08 | 2012-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Process of manufacturing luminescent device |
| JP2015111744A (ja) * | 2007-12-03 | 2015-06-18 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN109097545A (zh) * | 2018-10-08 | 2018-12-28 | 吉林大学 | 激光预热与高频振动耦合非晶合金表面改性装置与方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07321335A (ja) * | 1994-05-24 | 1995-12-08 | Semiconductor Energy Lab Co Ltd | 半導体装置の作成方法 |
| JPH07335546A (ja) * | 1994-06-14 | 1995-12-22 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JPH08339960A (ja) * | 1994-07-01 | 1996-12-24 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JPH10107290A (ja) * | 1996-09-27 | 1998-04-24 | Sharp Corp | 半導体装置およびその製造方法 |
| JP2000068207A (ja) * | 1999-09-13 | 2000-03-03 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
-
2001
- 2001-03-07 JP JP2001063900A patent/JP2001326178A/ja not_active Withdrawn
Patent Citations (5)
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6916693B2 (en) * | 2000-03-08 | 2005-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US7098084B2 (en) | 2000-03-08 | 2006-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US7183145B2 (en) | 2000-03-08 | 2007-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US7638377B2 (en) | 2000-03-08 | 2009-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US7179756B2 (en) | 2001-05-21 | 2007-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing thereof |
| US7485584B2 (en) | 2001-05-21 | 2009-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing thereof |
| US8119188B2 (en) | 2001-06-08 | 2012-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Process of manufacturing luminescent device |
| JP2003224070A (ja) * | 2001-11-26 | 2003-08-08 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2015111744A (ja) * | 2007-12-03 | 2015-06-18 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN109097545A (zh) * | 2018-10-08 | 2018-12-28 | 吉林大学 | 激光预热与高频振动耦合非晶合金表面改性装置与方法 |
| CN109097545B (zh) * | 2018-10-08 | 2023-09-15 | 吉林大学 | 激光预热与高频振动耦合非晶合金表面改性装置与方法 |
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