JP2001320094A - 改善された光出力を有する白色光照明装置 - Google Patents

改善された光出力を有する白色光照明装置

Info

Publication number
JP2001320094A
JP2001320094A JP2001086528A JP2001086528A JP2001320094A JP 2001320094 A JP2001320094 A JP 2001320094A JP 2001086528 A JP2001086528 A JP 2001086528A JP 2001086528 A JP2001086528 A JP 2001086528A JP 2001320094 A JP2001320094 A JP 2001320094A
Authority
JP
Japan
Prior art keywords
light emitting
emitting diode
point
line
luminescent material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001086528A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001320094A5 (https=
Inventor
Anil Raj Duggal
アニル・ラジ・ドゥガル
Alok Mani Srivastava
アロク・マニ・スリバスタバ
Holly Ann Comanzo
ホリー・アン・コマンゾ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JP2001320094A publication Critical patent/JP2001320094A/ja
Publication of JP2001320094A5 publication Critical patent/JP2001320094A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/77—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7774—Aluminates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)
JP2001086528A 2000-03-27 2001-03-26 改善された光出力を有する白色光照明装置 Withdrawn JP2001320094A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/534575 2000-03-27
US09/534,575 US6538371B1 (en) 2000-03-27 2000-03-27 White light illumination system with improved color output

Publications (2)

Publication Number Publication Date
JP2001320094A true JP2001320094A (ja) 2001-11-16
JP2001320094A5 JP2001320094A5 (https=) 2008-05-08

Family

ID=24130642

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001086528A Withdrawn JP2001320094A (ja) 2000-03-27 2001-03-26 改善された光出力を有する白色光照明装置

Country Status (7)

Country Link
US (1) US6538371B1 (https=)
EP (1) EP1139440A3 (https=)
JP (1) JP2001320094A (https=)
KR (1) KR100912204B1 (https=)
CN (1) CN1197174C (https=)
CA (1) CA2340968A1 (https=)
TW (1) TW494582B (https=)

Cited By (13)

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AU783100B2 (en) * 1996-07-29 2005-09-22 Nichia Corporation Light emitting device having a nitride compound semiconductor and a phosphor containing a garnet fluorescent material
US7026756B2 (en) 1996-07-29 2006-04-11 Nichia Kagaku Kogyo Kabushiki Kaisha Light emitting device with blue light LED and phosphor components
JP2008536281A (ja) * 2005-04-14 2008-09-04 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 白色ｌｅｄランプの色の制御
JP2009521806A (ja) * 2005-12-21 2009-06-04 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド 照明装置、および照明方法
JP2010500704A (ja) * 2006-08-11 2010-01-07 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング セラミック素子の形態におけるｌｅｄ変換蛍光体
JP2010512621A (ja) * 2006-12-07 2010-04-22 クリー レッド ライティング ソリューションズ、インコーポレイテッド 照明デバイスおよび照明方法
WO2010095737A1 (ja) * 2009-02-23 2010-08-26 株式会社東芝 固体シンチレータ、放射線検出器およびｘ線断層写真撮影装置
JP2011113738A (ja) * 2009-11-25 2011-06-09 Nec Lighting Ltd 照明装置および調光モード切替方法
JP2011526066A (ja) * 2008-06-25 2011-09-29 クリー インコーポレイテッド 混合光を含むソリッドステート照明デバイス
JP2013153191A (ja) * 2005-06-23 2013-08-08 Rensselaer Polytechnic Institute 短波長ｌｅｄとダウンコンバージョン物質で白色光を生成するパッケージ設計
JP2014514368A (ja) * 2011-02-24 2014-06-19 日東電工株式会社 蛍光体成分を有する発光複合材
JP2015004071A (ja) * 2012-04-24 2015-01-08 株式会社光波 蛍光体及び発光装置
US8998444B2 (en) 2006-04-18 2015-04-07 Cree, Inc. Solid state lighting devices including light mixtures

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TW494582B (en) 2002-07-11
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