JP2001306393A - 記憶装置 - Google Patents

記憶装置

Info

Publication number
JP2001306393A
JP2001306393A JP2000119323A JP2000119323A JP2001306393A JP 2001306393 A JP2001306393 A JP 2001306393A JP 2000119323 A JP2000119323 A JP 2000119323A JP 2000119323 A JP2000119323 A JP 2000119323A JP 2001306393 A JP2001306393 A JP 2001306393A
Authority
JP
Japan
Prior art keywords
physical address
flash memory
flash
binary
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000119323A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001306393A5 (enExample
Inventor
Tomoya Fukuzumi
知也 福住
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2000119323A priority Critical patent/JP2001306393A/ja
Priority to US09/677,878 priority patent/US6363009B1/en
Publication of JP2001306393A publication Critical patent/JP2001306393A/ja
Publication of JP2001306393A5 publication Critical patent/JP2001306393A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7202—Allocation control and policies
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7207—Details relating to flash memory management management of metadata or control data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5641—Multilevel memory having cells with different number of storage levels

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • Memory System (AREA)
JP2000119323A 2000-04-20 2000-04-20 記憶装置 Pending JP2001306393A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000119323A JP2001306393A (ja) 2000-04-20 2000-04-20 記憶装置
US09/677,878 US6363009B1 (en) 2000-04-20 2000-10-03 Storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000119323A JP2001306393A (ja) 2000-04-20 2000-04-20 記憶装置

Publications (2)

Publication Number Publication Date
JP2001306393A true JP2001306393A (ja) 2001-11-02
JP2001306393A5 JP2001306393A5 (enExample) 2007-04-19

Family

ID=18630323

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000119323A Pending JP2001306393A (ja) 2000-04-20 2000-04-20 記憶装置

Country Status (2)

Country Link
US (1) US6363009B1 (enExample)
JP (1) JP2001306393A (enExample)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006048746A (ja) * 2004-07-30 2006-02-16 Renesas Technology Corp メモリカード
JP2006252670A (ja) * 2005-03-10 2006-09-21 Matsushita Electric Ind Co Ltd 不揮発性メモリの駆動方法およびこれに用いられる不揮発性メモリ
WO2007037507A1 (en) * 2005-09-29 2007-04-05 Kabushiki Kaisha Toshiba Memory system and method of writing into nonvolatile semiconductor memory
JP2007108986A (ja) * 2005-10-13 2007-04-26 Hitachi Ulsi Systems Co Ltd 半導体記憶装置及び半導体装置
JP2007179669A (ja) * 2005-12-28 2007-07-12 Toshiba Corp メモリシステム
JP2007199765A (ja) * 2006-01-23 2007-08-09 Toshiba Corp 半導体記憶装置
JP2008084317A (ja) * 2006-09-27 2008-04-10 Samsung Electronics Co Ltd 異種セルタイプを支援する不揮発性メモリのためのマッピング装置および方法
JP2008084316A (ja) * 2006-09-27 2008-04-10 Samsung Electronics Co Ltd 異種セルタイプを支援する不揮発性メモリのためのマッピング情報管理装置および方法
JP2008242503A (ja) * 2007-03-23 2008-10-09 Canon Inc メモリ管理装置及び方法、並びにプログラム
JP2008310793A (ja) * 2007-05-14 2008-12-25 Buffalo Inc 記憶装置
JP2009048680A (ja) * 2007-08-15 2009-03-05 Hitachi Ulsi Systems Co Ltd 記憶装置
JP2009510549A (ja) * 2005-09-09 2009-03-12 サンディスク アイエル リミテッド フロントメモリストレージシステムおよび方法
JP2009510594A (ja) * 2005-09-29 2009-03-12 トレック・２０００・インターナショナル・リミテッド Ｓｌｃ及びｍｌｃフラッシュメモリを使用するポータブルデータ記憶装置
JP2009158015A (ja) * 2007-12-26 2009-07-16 Toshiba Corp 不揮発性半導体記憶装置
US7676626B2 (en) 2006-11-03 2010-03-09 Samsung Electronics Co., Ltd. Non-volatile memory system storing data in single-level cell or multi-level cell according to data characteristics
JP2010152703A (ja) * 2008-12-25 2010-07-08 Sony Corp 不揮発性記憶装置、情報記録システム、及び情報記録方法
CN102047230A (zh) * 2008-05-28 2011-05-04 美光科技公司 混合式存储器管理
US7970981B2 (en) 2006-10-30 2011-06-28 Samsung Electronics Co., Ltd. Flash memory device with multi-level cells and method of writing data therein
US7979627B2 (en) 2007-05-14 2011-07-12 Buffalo Inc. Storage device with binary and multivalued memory
US8069296B2 (en) 2006-01-23 2011-11-29 Kabushiki Kaisha Toshiba Semiconductor memory device including control means and memory system

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6822902B2 (en) * 2001-08-20 2004-11-23 Samsung Electronics Co., Ltd. Apparatus and method for interfacing between modem and memory in mobile station
US7554842B2 (en) * 2001-09-17 2009-06-30 Sandisk Corporation Multi-purpose non-volatile memory card
US6778436B2 (en) * 2001-10-10 2004-08-17 Fong Piau Apparatus and architecture for a compact flash memory controller
US20030127950A1 (en) * 2002-01-10 2003-07-10 Cheng-Hui Tseng Mail opening bag for preventing infection of bacteria-by-mail
JP2005092923A (ja) * 2003-09-12 2005-04-07 Renesas Technology Corp 半導体記憶装置
JP2005108304A (ja) * 2003-09-29 2005-04-21 Toshiba Corp 半導体記憶装置及びその制御方法
US8557831B2 (en) * 2004-07-21 2013-10-15 University Of Florida Research Foundation, Inc. Compositions and methods for treatment and prevention of insulin resistance
DE102006035039B4 (de) * 2006-07-28 2008-10-30 Infineon Technologies Ag Datenverarbeitungssystem und Verfahren zum Betreiben eines Datenverarbeitungssystems
DE102006049537A1 (de) * 2006-10-20 2008-04-24 Robert Bosch Gmbh Speichermedium mit Speicherzellen, Verfahren zum Adressieren von Speicherzellen auf dem Speichermedium und Vorrichtung zum Aufzeichnen und Wiedergeben von Daten in/von Speicherzellen auf dem Speichermedium
JP2008257773A (ja) * 2007-04-02 2008-10-23 Toshiba Corp 不揮発性半導体記憶装置、不揮発性半導体記憶装置の制御方法、不揮発性半導体記憶システム、及びメモリカード
US8200904B2 (en) * 2007-12-12 2012-06-12 Sandisk Il Ltd. System and method for clearing data from a cache
US8140739B2 (en) 2008-08-08 2012-03-20 Imation Corp. Flash memory based storage devices utilizing magnetoresistive random access memory (MRAM) to store files having logical block addresses stored in a write frequency file buffer table
US20100169540A1 (en) * 2008-12-30 2010-07-01 Sinclair Alan W Method and apparatus for relocating selected data between flash partitions in a memory device
US8261009B2 (en) * 2008-12-30 2012-09-04 Sandisk Il Ltd. Method and apparatus for retroactive adaptation of data location
US10032493B2 (en) * 2015-01-07 2018-07-24 Micron Technology, Inc. Longest element length determination in memory
JP2022074450A (ja) * 2020-11-04 2022-05-18 キオクシア株式会社 メモリカード、メモリシステム、及びファイルの断片化解消方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0883212A (ja) * 1994-09-12 1996-03-26 Fujitsu Ltd 半導体記憶装置
JPH10106276A (ja) * 1996-09-30 1998-04-24 Hitachi Ltd 半導体集積回路及びデータ処理システム
JPH11134884A (ja) * 1997-10-31 1999-05-21 Sony Corp 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5592641A (en) * 1993-06-30 1997-01-07 Intel Corporation Method and device for selectively locking write access to blocks in a memory array using write protect inputs and block enabled status
US6134148A (en) * 1997-09-30 2000-10-17 Hitachi, Ltd. Semiconductor integrated circuit and data processing system
US6122195A (en) * 1997-03-31 2000-09-19 Lexar Media, Inc. Method and apparatus for decreasing block write operation times performed on nonvolatile memory
JPH1131102A (ja) 1997-07-14 1999-02-02 Toshiba Corp データ記憶システム及び同システムに適用するアクセス制御方法
JPH11224491A (ja) 1997-12-03 1999-08-17 Sony Corp 不揮発性半導体記憶装置およびそれを用いたｉｃメモリカード
JPH11176178A (ja) * 1997-12-15 1999-07-02 Sony Corp 不揮発性半導体記憶装置およびそれを用いたｉｃメモリカード
JP4164192B2 (ja) * 1999-05-12 2008-10-08 株式会社ルネサステクノロジ 半導体装置を搭載する記憶装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0883212A (ja) * 1994-09-12 1996-03-26 Fujitsu Ltd 半導体記憶装置
JPH10106276A (ja) * 1996-09-30 1998-04-24 Hitachi Ltd 半導体集積回路及びデータ処理システム
JPH11134884A (ja) * 1997-10-31 1999-05-21 Sony Corp 半導体装置

Cited By (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006048746A (ja) * 2004-07-30 2006-02-16 Renesas Technology Corp メモリカード
JP2006252670A (ja) * 2005-03-10 2006-09-21 Matsushita Electric Ind Co Ltd 不揮発性メモリの駆動方法およびこれに用いられる不揮発性メモリ
JP2009510549A (ja) * 2005-09-09 2009-03-12 サンディスク アイエル リミテッド フロントメモリストレージシステムおよび方法
US8130557B2 (en) 2005-09-29 2012-03-06 Kabushiki Kaisha Toshiba Memory system and method of writing into nonvolatile semiconductor memory
WO2007037507A1 (en) * 2005-09-29 2007-04-05 Kabushiki Kaisha Toshiba Memory system and method of writing into nonvolatile semiconductor memory
JP2007094764A (ja) * 2005-09-29 2007-04-12 Toshiba Corp メモリシステム
US7872922B2 (en) 2005-09-29 2011-01-18 Kabushiki Kaisha Toshiba Memory system and method of writing into nonvolatile semiconductor memory
US8310896B2 (en) 2005-09-29 2012-11-13 Kabushiki Kaisha Toshiba Memory system and method of writing into nonvolatile semiconductor memory
KR100899242B1 (ko) * 2005-09-29 2009-05-27 가부시끼가이샤 도시바 메모리 시스템 및 불휘발성 반도체 메모리 기입 방법
JP2009510594A (ja) * 2005-09-29 2009-03-12 トレック・２０００・インターナショナル・リミテッド Ｓｌｃ及びｍｌｃフラッシュメモリを使用するポータブルデータ記憶装置
JP2007108986A (ja) * 2005-10-13 2007-04-26 Hitachi Ulsi Systems Co Ltd 半導体記憶装置及び半導体装置
JP2007179669A (ja) * 2005-12-28 2007-07-12 Toshiba Corp メモリシステム
US8069296B2 (en) 2006-01-23 2011-11-29 Kabushiki Kaisha Toshiba Semiconductor memory device including control means and memory system
JP2007199765A (ja) * 2006-01-23 2007-08-09 Toshiba Corp 半導体記憶装置
JP2008084316A (ja) * 2006-09-27 2008-04-10 Samsung Electronics Co Ltd 異種セルタイプを支援する不揮発性メモリのためのマッピング情報管理装置および方法
JP2008084317A (ja) * 2006-09-27 2008-04-10 Samsung Electronics Co Ltd 異種セルタイプを支援する不揮発性メモリのためのマッピング装置および方法
US8429327B2 (en) 2006-09-27 2013-04-23 Samsung Electronics Co., Ltd. Mapping apparatus and method for non-volatile memory supporting different cell types
US9886202B2 (en) 2006-10-30 2018-02-06 Samsung Electronics Co., Ltd. Flash memory device with multi-level cells and method of performing operations therein according to a detected writing patter
US8843699B2 (en) 2006-10-30 2014-09-23 Samsung Electronics Co., Ltd. Flash memory device with multi-level cells and method of writing data therein
US7970981B2 (en) 2006-10-30 2011-06-28 Samsung Electronics Co., Ltd. Flash memory device with multi-level cells and method of writing data therein
US9122592B2 (en) 2006-10-30 2015-09-01 Samsung Electronics Co., Ltd. Flash memory device with multi-level cells and method of writing data therein
US7676626B2 (en) 2006-11-03 2010-03-09 Samsung Electronics Co., Ltd. Non-volatile memory system storing data in single-level cell or multi-level cell according to data characteristics
US8214582B2 (en) 2006-11-03 2012-07-03 Samsung Electronics Co., Ltd. Non-volatile memory system storing data in single-level cell or multi-level cell according to data characteristics
JP2008242503A (ja) * 2007-03-23 2008-10-09 Canon Inc メモリ管理装置及び方法、並びにプログラム
US8335893B2 (en) 2007-03-23 2012-12-18 Canon Kabushiki Kaisha Storage device, system, and method that determines a physical address of a memory unit allocated to a logical address or allocates a logical address to a physical address of a memory unit, based on access speed information of the logical address
US7979627B2 (en) 2007-05-14 2011-07-12 Buffalo Inc. Storage device with binary and multivalued memory
JP2008310793A (ja) * 2007-05-14 2008-12-25 Buffalo Inc 記憶装置
JP2009048680A (ja) * 2007-08-15 2009-03-05 Hitachi Ulsi Systems Co Ltd 記憶装置
US8320200B2 (en) 2007-12-26 2012-11-27 Kabushiki Kaisha Toshiba Semiconductor storage device and method of reading data therefrom
JP2009158015A (ja) * 2007-12-26 2009-07-16 Toshiba Corp 不揮発性半導体記憶装置
JP2011522350A (ja) * 2008-05-28 2011-07-28 マイクロン テクノロジー， インク． ハイブリッドメモリ管理
CN102047230A (zh) * 2008-05-28 2011-05-04 美光科技公司 混合式存储器管理
US8751733B2 (en) 2008-05-28 2014-06-10 Round Rock Research, Llc Hybrid memory management
JP2014116031A (ja) * 2008-05-28 2014-06-26 Micron Technology Inc メモリデバイスを備えた電子システム
US9390004B2 (en) 2008-05-28 2016-07-12 Round Rock Research, Llc Hybrid memory management
JP2010152703A (ja) * 2008-12-25 2010-07-08 Sony Corp 不揮発性記憶装置、情報記録システム、及び情報記録方法

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Publication number Publication date
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