JP2001306393A5 - - Google Patents

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Publication number
JP2001306393A5
JP2001306393A5 JP2000119323A JP2000119323A JP2001306393A5 JP 2001306393 A5 JP2001306393 A5 JP 2001306393A5 JP 2000119323 A JP2000119323 A JP 2000119323A JP 2000119323 A JP2000119323 A JP 2000119323A JP 2001306393 A5 JP2001306393 A5 JP 2001306393A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000119323A
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Japanese (ja)
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JP2001306393A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000119323A priority Critical patent/JP2001306393A/ja
Priority claimed from JP2000119323A external-priority patent/JP2001306393A/ja
Priority to US09/677,878 priority patent/US6363009B1/en
Publication of JP2001306393A publication Critical patent/JP2001306393A/ja
Publication of JP2001306393A5 publication Critical patent/JP2001306393A5/ja
Pending legal-status Critical Current

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JP2000119323A 2000-04-20 2000-04-20 記憶装置 Pending JP2001306393A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000119323A JP2001306393A (ja) 2000-04-20 2000-04-20 記憶装置
US09/677,878 US6363009B1 (en) 2000-04-20 2000-10-03 Storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000119323A JP2001306393A (ja) 2000-04-20 2000-04-20 記憶装置

Publications (2)

Publication Number Publication Date
JP2001306393A JP2001306393A (ja) 2001-11-02
JP2001306393A5 true JP2001306393A5 (enExample) 2007-04-19

Family

ID=18630323

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000119323A Pending JP2001306393A (ja) 2000-04-20 2000-04-20 記憶装置

Country Status (2)

Country Link
US (1) US6363009B1 (enExample)
JP (1) JP2001306393A (enExample)

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US8557831B2 (en) * 2004-07-21 2013-10-15 University Of Florida Research Foundation, Inc. Compositions and methods for treatment and prevention of insulin resistance
JP2006048746A (ja) * 2004-07-30 2006-02-16 Renesas Technology Corp メモリカード
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US7752382B2 (en) * 2005-09-09 2010-07-06 Sandisk Il Ltd Flash memory storage system and method
JP4751163B2 (ja) * 2005-09-29 2011-08-17 株式会社東芝 メモリシステム
CN101273413B (zh) * 2005-09-29 2011-11-16 特科2000国际有限公司 使用单层单元和多层单元闪速存储器的便携式数据存储
JP4800732B2 (ja) * 2005-10-13 2011-10-26 株式会社日立超エル・エス・アイ・システムズ 半導体ディスクドライブ
JP2007179669A (ja) * 2005-12-28 2007-07-12 Toshiba Corp メモリシステム
JP2007199765A (ja) * 2006-01-23 2007-08-09 Toshiba Corp 半導体記憶装置
US8069296B2 (en) 2006-01-23 2011-11-29 Kabushiki Kaisha Toshiba Semiconductor memory device including control means and memory system
DE102006035039B4 (de) * 2006-07-28 2008-10-30 Infineon Technologies Ag Datenverarbeitungssystem und Verfahren zum Betreiben eines Datenverarbeitungssystems
KR100809320B1 (ko) * 2006-09-27 2008-03-05 삼성전자주식회사 이종 셀 타입을 지원하는 비휘발성 메모리를 위한 맵핑정보 관리 장치 및 방법
KR100855467B1 (ko) 2006-09-27 2008-09-01 삼성전자주식회사 이종 셀 타입을 지원하는 비휘발성 메모리를 위한 맵핑장치 및 방법
DE102006049537A1 (de) * 2006-10-20 2008-04-24 Robert Bosch Gmbh Speichermedium mit Speicherzellen, Verfahren zum Adressieren von Speicherzellen auf dem Speichermedium und Vorrichtung zum Aufzeichnen und Wiedergeben von Daten in/von Speicherzellen auf dem Speichermedium
KR100771521B1 (ko) 2006-10-30 2007-10-30 삼성전자주식회사 멀티 레벨 셀을 포함하는 플래시 메모리 장치 및 그것의데이터 쓰기 방법
KR100833188B1 (ko) 2006-11-03 2008-05-28 삼성전자주식회사 데이터의 특성에 따라 싱글 레벨 셀 또는 멀티 레벨 셀에데이터를 저장하는 불휘발성 메모리 시스템
JP5224706B2 (ja) * 2007-03-23 2013-07-03 キヤノン株式会社 記憶装置及び記憶装置の制御方法
JP2008257773A (ja) * 2007-04-02 2008-10-23 Toshiba Corp 不揮発性半導体記憶装置、不揮発性半導体記憶装置の制御方法、不揮発性半導体記憶システム、及びメモリカード
US7979627B2 (en) 2007-05-14 2011-07-12 Buffalo Inc. Storage device with binary and multivalued memory
JP4781373B2 (ja) * 2007-05-14 2011-09-28 株式会社バッファロー 記憶装置
JP5259138B2 (ja) * 2007-08-15 2013-08-07 株式会社日立超エル・エス・アイ・システムズ 記憶装置
US8200904B2 (en) * 2007-12-12 2012-06-12 Sandisk Il Ltd. System and method for clearing data from a cache
JP2009158015A (ja) 2007-12-26 2009-07-16 Toshiba Corp 不揮発性半導体記憶装置
US8060719B2 (en) 2008-05-28 2011-11-15 Micron Technology, Inc. Hybrid memory management
US8140739B2 (en) 2008-08-08 2012-03-20 Imation Corp. Flash memory based storage devices utilizing magnetoresistive random access memory (MRAM) to store files having logical block addresses stored in a write frequency file buffer table
JP5458568B2 (ja) * 2008-12-25 2014-04-02 ソニー株式会社 不揮発性記憶装置、情報記録システム、及び情報記録方法
US20100169540A1 (en) * 2008-12-30 2010-07-01 Sinclair Alan W Method and apparatus for relocating selected data between flash partitions in a memory device
US8261009B2 (en) * 2008-12-30 2012-09-04 Sandisk Il Ltd. Method and apparatus for retroactive adaptation of data location
US10032493B2 (en) * 2015-01-07 2018-07-24 Micron Technology, Inc. Longest element length determination in memory
JP2022074450A (ja) * 2020-11-04 2022-05-18 キオクシア株式会社 メモリカード、メモリシステム、及びファイルの断片化解消方法

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JPH0883212A (ja) * 1994-09-12 1996-03-26 Fujitsu Ltd 半導体記憶装置
JP3930074B2 (ja) * 1996-09-30 2007-06-13 株式会社ルネサステクノロジ 半導体集積回路及びデータ処理システム
US6134148A (en) * 1997-09-30 2000-10-17 Hitachi, Ltd. Semiconductor integrated circuit and data processing system
US6122195A (en) * 1997-03-31 2000-09-19 Lexar Media, Inc. Method and apparatus for decreasing block write operation times performed on nonvolatile memory
JPH1131102A (ja) 1997-07-14 1999-02-02 Toshiba Corp データ記憶システム及び同システムに適用するアクセス制御方法
JPH11134884A (ja) * 1997-10-31 1999-05-21 Sony Corp 半導体装置
JPH11224491A (ja) 1997-12-03 1999-08-17 Sony Corp 不揮発性半導体記憶装置およびそれを用いたicメモリカード
JPH11176178A (ja) * 1997-12-15 1999-07-02 Sony Corp 不揮発性半導体記憶装置およびそれを用いたicメモリカード
JP4164192B2 (ja) * 1999-05-12 2008-10-08 株式会社ルネサステクノロジ 半導体装置を搭載する記憶装置

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