JP2001284578A5 - - Google Patents

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Publication number
JP2001284578A5
JP2001284578A5 JP2000095895A JP2000095895A JP2001284578A5 JP 2001284578 A5 JP2001284578 A5 JP 2001284578A5 JP 2000095895 A JP2000095895 A JP 2000095895A JP 2000095895 A JP2000095895 A JP 2000095895A JP 2001284578 A5 JP2001284578 A5 JP 2001284578A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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JP2000095895A
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JP4751498B2 (ja
JP2001284578A (ja
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Priority to JP2000095895A priority Critical patent/JP4751498B2/ja
Priority claimed from JP2000095895A external-priority patent/JP4751498B2/ja
Priority to US09/746,064 priority patent/US6822307B2/en
Publication of JP2001284578A publication Critical patent/JP2001284578A/ja
Publication of JP2001284578A5 publication Critical patent/JP2001284578A5/ja
Application granted granted Critical
Publication of JP4751498B2 publication Critical patent/JP4751498B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000095895A 2000-03-30 2000-03-30 半導体三端子装置 Expired - Fee Related JP4751498B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000095895A JP4751498B2 (ja) 2000-03-30 2000-03-30 半導体三端子装置
US09/746,064 US6822307B2 (en) 2000-03-30 2000-12-26 Semiconductor triode device having a compound-semiconductor channel layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000095895A JP4751498B2 (ja) 2000-03-30 2000-03-30 半導体三端子装置

Publications (3)

Publication Number Publication Date
JP2001284578A JP2001284578A (ja) 2001-10-12
JP2001284578A5 true JP2001284578A5 (ja) 2006-10-05
JP4751498B2 JP4751498B2 (ja) 2011-08-17

Family

ID=18610736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000095895A Expired - Fee Related JP4751498B2 (ja) 2000-03-30 2000-03-30 半導体三端子装置

Country Status (2)

Country Link
US (1) US6822307B2 (ja)
JP (1) JP4751498B2 (ja)

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JP4606552B2 (ja) * 2000-06-27 2011-01-05 富士通株式会社 半導体装置
US6378759B1 (en) * 2000-07-18 2002-04-30 Chartered Semiconductor Manufacturing Ltd. Method of application of conductive cap-layer in flip-chip, COB, and micro metal bonding
US6740535B2 (en) * 2002-07-29 2004-05-25 International Business Machines Corporation Enhanced T-gate structure for modulation doped field effect transistors
US6833556B2 (en) 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US7084423B2 (en) 2002-08-12 2006-08-01 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
TW573120B (en) * 2002-12-06 2004-01-21 Univ Nat Cheng Kung Hydrogen sensor suitable for high temperature operation and method for producing the same
US7901994B2 (en) * 2004-01-16 2011-03-08 Cree, Inc. Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers
US7045404B2 (en) * 2004-01-16 2006-05-16 Cree, Inc. Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof
US7238560B2 (en) * 2004-07-23 2007-07-03 Cree, Inc. Methods of fabricating nitride-based transistors with a cap layer and a recessed gate
US7126199B2 (en) * 2004-09-27 2006-10-24 Intel Corporation Multilayer metal gate electrode
US7456443B2 (en) * 2004-11-23 2008-11-25 Cree, Inc. Transistors having buried n-type and p-type regions beneath the source region
JP2006173571A (ja) * 2004-12-14 2006-06-29 Korea Electronics Telecommun 半導体素子のトランジスタ及びその製造方法
JP2006222414A (ja) * 2005-01-14 2006-08-24 Matsushita Electric Ind Co Ltd 半導体装置
TWI267946B (en) * 2005-08-22 2006-12-01 Univ Nat Chiao Tung Interconnection of group III-V semiconductor device and fabrication method for making the same
US7566623B2 (en) * 2007-02-02 2009-07-28 Freescale Semiconductor, Inc. Electronic device including a semiconductor fin having a plurality of gate electrodes and a process for forming the electronic device
US7501670B2 (en) * 2007-03-20 2009-03-10 Velox Semiconductor Corporation Cascode circuit employing a depletion-mode, GaN-based FET
JP5966289B2 (ja) * 2011-09-16 2016-08-10 富士通株式会社 半導体基板の製造方法及び半導体装置の製造方法
WO2013077954A1 (en) 2011-11-23 2013-05-30 Acorn Technologies, Inc. Improving metal contacts to group iv semiconductors by inserting interfacial atomic monolayers
JP2013229493A (ja) * 2012-04-26 2013-11-07 Sharp Corp Ｉｉｉ族窒化物半導体積層基板およびｉｉｉ族窒化物半導体電界効果トランジスタ
JP2013258368A (ja) * 2012-06-14 2013-12-26 Toshiba Corp 半導体装置
US9620611B1 (en) 2016-06-17 2017-04-11 Acorn Technology, Inc. MIS contact structure with metal oxide conductor
US10170627B2 (en) 2016-11-18 2019-01-01 Acorn Technologies, Inc. Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height
JP7100241B2 (ja) * 2017-12-20 2022-07-13 富士通株式会社 化合物半導体装置及びその製造方法

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JPS61285762A (ja) * 1985-06-12 1986-12-16 Toshiba Corp 半導体装置およびその製造方法
JPS62260320A (ja) * 1986-05-06 1987-11-12 Mitsubishi Electric Corp 半導体装置の製造方法
US4843450A (en) * 1986-06-16 1989-06-27 International Business Machines Corporation Compound semiconductor interface control
JP2695185B2 (ja) * 1988-05-02 1997-12-24 株式会社日立製作所 半導体集積回路装置及びその製造方法
EP0426877B1 (en) * 1989-05-31 1995-08-23 Japan Energy Corporation Method of producing compound semiconductor devices
JP2932304B2 (ja) * 1990-07-11 1999-08-09 サンケン電気株式会社 ショットキ障壁を有する半導体装置の製造方法
JP3119370B2 (ja) * 1991-03-18 2000-12-18 キヤノン株式会社 絶縁ゲートトランジスタ及び半導体集積回路
JPH05102156A (ja) * 1991-10-09 1993-04-23 Sony Corp 半導体装置
JP2750330B2 (ja) * 1991-12-17 1998-05-13 株式会社ジャパンエナジー 化合物半導体装置の製造方法
JPH0774325A (ja) * 1993-06-29 1995-03-17 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
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JP3058040B2 (ja) * 1995-01-18 2000-07-04 株式会社村田製作所 半導体装置
JPH0936393A (ja) * 1995-07-25 1997-02-07 Denso Corp ショットキー接合を有する半導体装置の製造方法
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JPH10242579A (ja) * 1997-02-27 1998-09-11 Sharp Corp 窒化物系ｉｉｉ−ｖ族化合物半導体装置
JP3161516B2 (ja) * 1997-10-03 2001-04-25 日本電気株式会社 半導体装置の製造方法
US6004850A (en) * 1998-02-23 1999-12-21 Motorola Inc. Tantalum oxide anti-reflective coating (ARC) integrated with a metallic transistor gate electrode and method of formation
JP4093395B2 (ja) * 2001-08-03 2008-06-04 富士通株式会社 半導体装置とその製造方法

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