JP2001266579A - 不揮発性半導体記憶装置および半導体ディスク装置 - Google Patents

不揮発性半導体記憶装置および半導体ディスク装置

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Publication number
JP2001266579A
JP2001266579A JP2001001590A JP2001001590A JP2001266579A JP 2001266579 A JP2001266579 A JP 2001266579A JP 2001001590 A JP2001001590 A JP 2001001590A JP 2001001590 A JP2001001590 A JP 2001001590A JP 2001266579 A JP2001266579 A JP 2001266579A
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JP
Japan
Prior art keywords
bank
data
flash memory
buffer
write
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001001590A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001266579A5 (enExample
Inventor
Naoki Kobayashi
小林　　直樹
Shunichi Saeki
俊一 佐伯
Hideaki Kurata
英明 倉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Japan Display Inc
Original Assignee
Hitachi Device Engineering Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Device Engineering Co Ltd, Hitachi Ltd filed Critical Hitachi Device Engineering Co Ltd
Priority to JP2001001590A priority Critical patent/JP2001266579A/ja
Publication of JP2001266579A publication Critical patent/JP2001266579A/ja
Publication of JP2001266579A5 publication Critical patent/JP2001266579A5/ja
Withdrawn legal-status Critical Current

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  • Read Only Memory (AREA)
JP2001001590A 2000-01-12 2001-01-09 不揮発性半導体記憶装置および半導体ディスク装置 Withdrawn JP2001266579A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001001590A JP2001266579A (ja) 2000-01-12 2001-01-09 不揮発性半導体記憶装置および半導体ディスク装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-6262 2000-01-12
JP2000006262 2000-01-12
JP2001001590A JP2001266579A (ja) 2000-01-12 2001-01-09 不揮発性半導体記憶装置および半導体ディスク装置

Publications (2)

Publication Number Publication Date
JP2001266579A true JP2001266579A (ja) 2001-09-28
JP2001266579A5 JP2001266579A5 (enExample) 2006-03-09

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ID=26583530

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001001590A Withdrawn JP2001266579A (ja) 2000-01-12 2001-01-09 不揮発性半導体記憶装置および半導体ディスク装置

Country Status (1)

Country Link
JP (1) JP2001266579A (enExample)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003060722A1 (en) * 2002-01-09 2003-07-24 Renesas Technology Corp. Memory system and memory card
WO2006051780A1 (ja) * 2004-11-10 2006-05-18 Matsushita Electric Industrial Co., Ltd. 同時アクセスするバンク数が異なるメモリコントローラに対応した不揮発性メモリ装置
JP2008065859A (ja) * 2007-11-26 2008-03-21 Renesas Technology Corp メモリシステム
KR100863373B1 (ko) * 2004-07-08 2008-10-13 가부시끼가이샤 르네사스 테크놀로지 메모리 시스템 및 메모리 카드
KR100864474B1 (ko) 2006-12-22 2008-10-20 후지쯔 마이크로일렉트로닉스 가부시키가이샤 반도체 집적 회로, 화상 처리 시스템, 반도체 메모리컨트롤러, 및 반도체 집적 회로 장치
JP2010066946A (ja) * 2008-09-10 2010-03-25 Spansion Llc メモリシステム、メモリ装置、メモリアクセス方法
JP2011129192A (ja) * 2009-12-16 2011-06-30 Samsung Electronics Co Ltd 半導体記憶装置
JP2012226786A (ja) * 2006-08-22 2012-11-15 Mosaid Technologies Inc スケーラブルメモリシステム
US8671252B2 (en) 2006-08-22 2014-03-11 Mosaid Technologies Incorporated Scalable memory system
JP2014174659A (ja) * 2013-03-07 2014-09-22 Sony Corp 記憶制御装置、記憶装置、情報処理システムおよび記憶制御方法
JP2015007843A (ja) * 2013-06-24 2015-01-15 富士通株式会社 ストレージシステム、ストレージ装置及びストレージシステムの制御方法
US9123395B2 (en) 2007-11-09 2015-09-01 SK Hynix Inc. Stack bank type semiconductor memory apparatus capable of improving alignment margin

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7290109B2 (en) 2002-01-09 2007-10-30 Renesas Technology Corp. Memory system and memory card
WO2003060722A1 (en) * 2002-01-09 2003-07-24 Renesas Technology Corp. Memory system and memory card
KR100863373B1 (ko) * 2004-07-08 2008-10-13 가부시끼가이샤 르네사스 테크놀로지 메모리 시스템 및 메모리 카드
WO2006051780A1 (ja) * 2004-11-10 2006-05-18 Matsushita Electric Industrial Co., Ltd. 同時アクセスするバンク数が異なるメモリコントローラに対応した不揮発性メモリ装置
JP2012226786A (ja) * 2006-08-22 2012-11-15 Mosaid Technologies Inc スケーラブルメモリシステム
US8671252B2 (en) 2006-08-22 2014-03-11 Mosaid Technologies Incorporated Scalable memory system
KR100864474B1 (ko) 2006-12-22 2008-10-20 후지쯔 마이크로일렉트로닉스 가부시키가이샤 반도체 집적 회로, 화상 처리 시스템, 반도체 메모리컨트롤러, 및 반도체 집적 회로 장치
US9123395B2 (en) 2007-11-09 2015-09-01 SK Hynix Inc. Stack bank type semiconductor memory apparatus capable of improving alignment margin
JP2008065859A (ja) * 2007-11-26 2008-03-21 Renesas Technology Corp メモリシステム
JP2010066946A (ja) * 2008-09-10 2010-03-25 Spansion Llc メモリシステム、メモリ装置、メモリアクセス方法
JP2011129192A (ja) * 2009-12-16 2011-06-30 Samsung Electronics Co Ltd 半導体記憶装置
JP2014174659A (ja) * 2013-03-07 2014-09-22 Sony Corp 記憶制御装置、記憶装置、情報処理システムおよび記憶制御方法
JP2015007843A (ja) * 2013-06-24 2015-01-15 富士通株式会社 ストレージシステム、ストレージ装置及びストレージシステムの制御方法
US9977602B2 (en) 2013-06-24 2018-05-22 Fujitsu Limited Storage system, storage device, and control method of storage system

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