JP2001250375A5 - - Google Patents

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Publication number
JP2001250375A5
JP2001250375A5 JP2000063152A JP2000063152A JP2001250375A5 JP 2001250375 A5 JP2001250375 A5 JP 2001250375A5 JP 2000063152 A JP2000063152 A JP 2000063152A JP 2000063152 A JP2000063152 A JP 2000063152A JP 2001250375 A5 JP2001250375 A5 JP 2001250375A5
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JP
Japan
Prior art keywords
memory cell
circuit
cell array
rewrite
data input
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Pending
Application number
JP2000063152A
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English (en)
Japanese (ja)
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JP2001250375A (ja
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Priority to JP2000063152A priority Critical patent/JP2001250375A/ja
Priority claimed from JP2000063152A external-priority patent/JP2001250375A/ja
Publication of JP2001250375A publication Critical patent/JP2001250375A/ja
Publication of JP2001250375A5 publication Critical patent/JP2001250375A5/ja
Pending legal-status Critical Current

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JP2000063152A 2000-03-08 2000-03-08 強誘電体メモリ Pending JP2001250375A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000063152A JP2001250375A (ja) 2000-03-08 2000-03-08 強誘電体メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000063152A JP2001250375A (ja) 2000-03-08 2000-03-08 強誘電体メモリ

Publications (2)

Publication Number Publication Date
JP2001250375A JP2001250375A (ja) 2001-09-14
JP2001250375A5 true JP2001250375A5 (enExample) 2005-05-12

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ID=18583060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000063152A Pending JP2001250375A (ja) 2000-03-08 2000-03-08 強誘電体メモリ

Country Status (1)

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JP (1) JP2001250375A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100492800B1 (ko) * 2002-11-12 2005-06-07 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 제어 장치
KR100507367B1 (ko) * 2003-01-24 2005-08-05 주식회사 하이닉스반도체 불휘발성 강유전체 메모리를 이용한 직렬 버스 제어 장치
US9558804B2 (en) * 2014-07-23 2017-01-31 Namlab Ggmbh Charge storage ferroelectric memory hybrid and erase scheme

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