JP2001250375A - 強誘電体メモリ - Google Patents

強誘電体メモリ

Info

Publication number
JP2001250375A
JP2001250375A JP2000063152A JP2000063152A JP2001250375A JP 2001250375 A JP2001250375 A JP 2001250375A JP 2000063152 A JP2000063152 A JP 2000063152A JP 2000063152 A JP2000063152 A JP 2000063152A JP 2001250375 A JP2001250375 A JP 2001250375A
Authority
JP
Japan
Prior art keywords
circuit
data
memory cell
cell array
sense amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000063152A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001250375A5 (enExample
Inventor
Tadashi Miyagawa
正 宮川
Yukito Owaki
幸人 大脇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000063152A priority Critical patent/JP2001250375A/ja
Publication of JP2001250375A publication Critical patent/JP2001250375A/ja
Publication of JP2001250375A5 publication Critical patent/JP2001250375A5/ja
Pending legal-status Critical Current

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  • Dram (AREA)
JP2000063152A 2000-03-08 2000-03-08 強誘電体メモリ Pending JP2001250375A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000063152A JP2001250375A (ja) 2000-03-08 2000-03-08 強誘電体メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000063152A JP2001250375A (ja) 2000-03-08 2000-03-08 強誘電体メモリ

Publications (2)

Publication Number Publication Date
JP2001250375A true JP2001250375A (ja) 2001-09-14
JP2001250375A5 JP2001250375A5 (enExample) 2005-05-12

Family

ID=18583060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000063152A Pending JP2001250375A (ja) 2000-03-08 2000-03-08 強誘電体メモリ

Country Status (1)

Country Link
JP (1) JP2001250375A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004227565A (ja) * 2003-01-24 2004-08-12 Hynix Semiconductor Inc 不揮発性強誘電体メモリを利用した直列バス制御装置
JP2010061788A (ja) * 2002-11-12 2010-03-18 Hynix Semiconductor Inc 不揮発性強誘電体メモリの制御装置
CN110085271B (zh) * 2014-07-23 2023-06-13 纳姆实验有限责任公司 禁止对FeFET存储器电路进行编程的方法及电路

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010061788A (ja) * 2002-11-12 2010-03-18 Hynix Semiconductor Inc 不揮発性強誘電体メモリの制御装置
JP2004227565A (ja) * 2003-01-24 2004-08-12 Hynix Semiconductor Inc 不揮発性強誘電体メモリを利用した直列バス制御装置
CN110085271B (zh) * 2014-07-23 2023-06-13 纳姆实验有限责任公司 禁止对FeFET存储器电路进行编程的方法及电路

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