JP2001216799A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JP2001216799A
JP2001216799A JP2000287191A JP2000287191A JP2001216799A JP 2001216799 A JP2001216799 A JP 2001216799A JP 2000287191 A JP2000287191 A JP 2000287191A JP 2000287191 A JP2000287191 A JP 2000287191A JP 2001216799 A JP2001216799 A JP 2001216799A
Authority
JP
Japan
Prior art keywords
power supply
signal
line
address
lines
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000287191A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001216799A5 (enExample
Inventor
Yoichi Suzuki
洋一 鈴木
Mitsuhiko Kosakai
光彦 小酒井
Akihiro Mishima
章弘 三島
Makoto Segawa
真 瀬川
Yasuo Naruge
康雄 成毛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Priority to JP2000287191A priority Critical patent/JP2001216799A/ja
Priority to TW089124473A priority patent/TW518746B/zh
Priority to US09/722,195 priority patent/US6529438B1/en
Priority to KR10-2000-0070644A priority patent/KR100402041B1/ko
Publication of JP2001216799A publication Critical patent/JP2001216799A/ja
Publication of JP2001216799A5 publication Critical patent/JP2001216799A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2000287191A 1999-11-25 2000-09-21 半導体記憶装置 Pending JP2001216799A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000287191A JP2001216799A (ja) 1999-11-25 2000-09-21 半導体記憶装置
TW089124473A TW518746B (en) 1999-11-25 2000-11-18 Semiconductor memory device
US09/722,195 US6529438B1 (en) 1999-11-25 2000-11-22 Semiconductor memory device implemented with a test circuit
KR10-2000-0070644A KR100402041B1 (ko) 1999-11-25 2000-11-25 반도체 기억 장치

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11-334971 1999-11-25
JP33497199 1999-11-25
JP2000287191A JP2001216799A (ja) 1999-11-25 2000-09-21 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2001216799A true JP2001216799A (ja) 2001-08-10
JP2001216799A5 JP2001216799A5 (enExample) 2005-12-02

Family

ID=36586041

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000287191A Pending JP2001216799A (ja) 1999-11-25 2000-09-21 半導体記憶装置

Country Status (4)

Country Link
US (1) US6529438B1 (enExample)
JP (1) JP2001216799A (enExample)
KR (1) KR100402041B1 (enExample)
TW (1) TW518746B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4782937B2 (ja) * 2001-03-27 2011-09-28 株式会社東芝 半導体記憶装置
JP3644913B2 (ja) * 2001-07-23 2005-05-11 松下電器産業株式会社 半導体装置
KR20030030165A (ko) * 2001-10-09 2003-04-18 동부전자 주식회사 메모리 디바이스의 전원 불량 테스트 장치
US6813579B1 (en) * 2001-12-14 2004-11-02 Cirrus Logic, Inc. Apparatus and method for test mode control
KR100442148B1 (ko) * 2002-08-09 2004-07-27 동부전자 주식회사 반도체 장비에서의 누전 셀 검출장치
US7188263B1 (en) * 2003-05-07 2007-03-06 Nvidia Corporation Method and apparatus for controlling power state of a multi-lane serial bus link having a plurality of state transition detectors wherein powering down all the state transition detectors except one
KR100505711B1 (ko) * 2003-09-30 2005-08-03 삼성전자주식회사 칼럼 선택 신호 제어 방법 및 칼럼 선택 신호 제어 회로
US7369452B2 (en) * 2006-04-07 2008-05-06 Freescale Semiconductor, Inc. Programmable cell
JP2009266317A (ja) * 2008-04-25 2009-11-12 Elpida Memory Inc 半導体記憶装置、およびデータ縮約テスト方法
KR101539297B1 (ko) 2009-01-05 2015-07-24 삼성전자주식회사 반도체 장치, 이를 포함하는 반도체 시스템, 및 반도체 장치의 전압 공급방법
JP2011134386A (ja) * 2009-12-24 2011-07-07 Elpida Memory Inc 半導体装置
WO2013179593A1 (ja) * 2012-05-29 2013-12-05 パナソニック株式会社 半導体記憶装置および半導体記憶装置を搭載した半導体装置
KR102651706B1 (ko) * 2017-01-09 2024-03-28 에스케이하이닉스 주식회사 라인 결함 검출 회로 및 그를 포함하는 반도체 메모리 장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1145598A (ja) * 1997-07-25 1999-02-16 Nec Corp 半導体記憶装置
JPH11154400A (ja) * 1997-11-21 1999-06-08 Toshiba Corp 半導体記憶装置およびそのテスト方法
JP3309822B2 (ja) * 1999-01-12 2002-07-29 日本電気株式会社 半導体記憶装置及びその試験方法

Also Published As

Publication number Publication date
US6529438B1 (en) 2003-03-04
TW518746B (en) 2003-01-21
KR20010070239A (ko) 2001-07-25
KR100402041B1 (ko) 2003-10-17

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