TW518746B - Semiconductor memory device - Google Patents
Semiconductor memory device Download PDFInfo
- Publication number
- TW518746B TW518746B TW089124473A TW89124473A TW518746B TW 518746 B TW518746 B TW 518746B TW 089124473 A TW089124473 A TW 089124473A TW 89124473 A TW89124473 A TW 89124473A TW 518746 B TW518746 B TW 518746B
- Authority
- TW
- Taiwan
- Prior art keywords
- line
- aforementioned
- address
- selection
- lines
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 230000002950 deficient Effects 0.000 claims abstract description 11
- 238000012360 testing method Methods 0.000 claims description 129
- 230000007246 mechanism Effects 0.000 claims description 53
- 239000000872 buffer Substances 0.000 claims description 38
- 230000009471 action Effects 0.000 claims description 14
- 239000011159 matrix material Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 238000012545 processing Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 30
- 230000002079 cooperative effect Effects 0.000 description 12
- 229910052779 Neodymium Inorganic materials 0.000 description 5
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 5
- 230000000875 corresponding effect Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 241000282376 Panthera tigris Species 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 206010000117 Abnormal behaviour Diseases 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 241000406668 Loxodonta cyclotis Species 0.000 description 1
- 235000015429 Mirabilis expansa Nutrition 0.000 description 1
- 244000294411 Mirabilis expansa Species 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- RDYMFSUJUZBWLH-UHFFFAOYSA-N endosulfan Chemical compound C12COS(=O)OCC2C2(Cl)C(Cl)=C(Cl)C1(Cl)C2(Cl)Cl RDYMFSUJUZBWLH-UHFFFAOYSA-N 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 235000013536 miso Nutrition 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005491 wire drawing Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/10—Decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33497199 | 1999-11-25 | ||
| JP2000287191A JP2001216799A (ja) | 1999-11-25 | 2000-09-21 | 半導体記憶装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW518746B true TW518746B (en) | 2003-01-21 |
Family
ID=36586041
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089124473A TW518746B (en) | 1999-11-25 | 2000-11-18 | Semiconductor memory device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6529438B1 (enExample) |
| JP (1) | JP2001216799A (enExample) |
| KR (1) | KR100402041B1 (enExample) |
| TW (1) | TW518746B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4782937B2 (ja) * | 2001-03-27 | 2011-09-28 | 株式会社東芝 | 半導体記憶装置 |
| JP3644913B2 (ja) * | 2001-07-23 | 2005-05-11 | 松下電器産業株式会社 | 半導体装置 |
| KR20030030165A (ko) * | 2001-10-09 | 2003-04-18 | 동부전자 주식회사 | 메모리 디바이스의 전원 불량 테스트 장치 |
| US6813579B1 (en) * | 2001-12-14 | 2004-11-02 | Cirrus Logic, Inc. | Apparatus and method for test mode control |
| KR100442148B1 (ko) * | 2002-08-09 | 2004-07-27 | 동부전자 주식회사 | 반도체 장비에서의 누전 셀 검출장치 |
| US7188263B1 (en) * | 2003-05-07 | 2007-03-06 | Nvidia Corporation | Method and apparatus for controlling power state of a multi-lane serial bus link having a plurality of state transition detectors wherein powering down all the state transition detectors except one |
| KR100505711B1 (ko) * | 2003-09-30 | 2005-08-03 | 삼성전자주식회사 | 칼럼 선택 신호 제어 방법 및 칼럼 선택 신호 제어 회로 |
| US7369452B2 (en) * | 2006-04-07 | 2008-05-06 | Freescale Semiconductor, Inc. | Programmable cell |
| JP2009266317A (ja) * | 2008-04-25 | 2009-11-12 | Elpida Memory Inc | 半導体記憶装置、およびデータ縮約テスト方法 |
| KR101539297B1 (ko) | 2009-01-05 | 2015-07-24 | 삼성전자주식회사 | 반도체 장치, 이를 포함하는 반도체 시스템, 및 반도체 장치의 전압 공급방법 |
| JP2011134386A (ja) * | 2009-12-24 | 2011-07-07 | Elpida Memory Inc | 半導体装置 |
| WO2013179593A1 (ja) * | 2012-05-29 | 2013-12-05 | パナソニック株式会社 | 半導体記憶装置および半導体記憶装置を搭載した半導体装置 |
| KR102651706B1 (ko) * | 2017-01-09 | 2024-03-28 | 에스케이하이닉스 주식회사 | 라인 결함 검출 회로 및 그를 포함하는 반도체 메모리 장치 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1145598A (ja) * | 1997-07-25 | 1999-02-16 | Nec Corp | 半導体記憶装置 |
| JPH11154400A (ja) * | 1997-11-21 | 1999-06-08 | Toshiba Corp | 半導体記憶装置およびそのテスト方法 |
| JP3309822B2 (ja) * | 1999-01-12 | 2002-07-29 | 日本電気株式会社 | 半導体記憶装置及びその試験方法 |
-
2000
- 2000-09-21 JP JP2000287191A patent/JP2001216799A/ja active Pending
- 2000-11-18 TW TW089124473A patent/TW518746B/zh not_active IP Right Cessation
- 2000-11-22 US US09/722,195 patent/US6529438B1/en not_active Expired - Fee Related
- 2000-11-25 KR KR10-2000-0070644A patent/KR100402041B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US6529438B1 (en) | 2003-03-04 |
| KR20010070239A (ko) | 2001-07-25 |
| JP2001216799A (ja) | 2001-08-10 |
| KR100402041B1 (ko) | 2003-10-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4624516B2 (ja) | ヒューズ検出回路およびその集積回路メモリ | |
| JP5761873B2 (ja) | 使用される書き込みポートの数を変更可能なマルチポートメモリ | |
| TW518746B (en) | Semiconductor memory device | |
| TW321769B (en) | Test method and testing circuit for semiconductor memory devices | |
| TW506135B (en) | Semiconductor integrated circuit device | |
| JP4962828B2 (ja) | ワード線ドライバ回路およびこれを利用する方法 | |
| TW301784B (enExample) | ||
| KR0177740B1 (ko) | 반도체 메모리 장치의 리던던시 회로 및 그 방법 | |
| CN102403017B (zh) | 电保险丝存储器阵列 | |
| JPH0468719B2 (enExample) | ||
| JPH0334640B2 (enExample) | ||
| JP2019096371A (ja) | Ｓｒａｍ装置のための冗長回路、ｓｒａｍ装置、及び半導体装置 | |
| JPH04230049A (ja) | 半導体装置 | |
| KR20050008829A (ko) | 메모리의 소프트 결함 검출 방법 및 장치 | |
| JP4782937B2 (ja) | 半導体記憶装置 | |
| TW440858B (en) | Semiconductor storage device having redundancy circuit | |
| US7339848B1 (en) | Anti-fuse latch circuit and method including self-test | |
| JP3715393B2 (ja) | 半導体メモリ装置 | |
| TW200415648A (en) | Magnetic random access memory circuit | |
| TW578165B (en) | Low power SRAM redundancy repair scheme | |
| JP3081754B2 (ja) | プログラマブル半導体集積回路 | |
| JP2001210092A (ja) | 半導体記憶装置 | |
| US7274614B2 (en) | Flash cell fuse circuit and method of fusing a flash cell | |
| JPS59124098A (ja) | 半導体メモリの冗長デコ−ダ | |
| US7495472B2 (en) | Circuits/methods for electrically isolating fuses in integrated circuits |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |